电-热综合能源系统(integrated electricity and heat system,IEHS)可以有效促进可再生能源消纳。构建区域供热系统精细化模型与合理的可再生能源不确定性出力模型是调度IEHS的两个难点。该文首先提出计及可变流量调节模式的IEHS条件分...电-热综合能源系统(integrated electricity and heat system,IEHS)可以有效促进可再生能源消纳。构建区域供热系统精细化模型与合理的可再生能源不确定性出力模型是调度IEHS的两个难点。该文首先提出计及可变流量调节模式的IEHS条件分布鲁棒优化调度模型,主要有两点改进:通过构建基于修正模糊集的条件分布鲁棒模型建模可再生能源预测误差与其预测出力信息之间的内在依赖性,提升调度结果安全性与最优性;基于流体能量守恒方程与一阶隐式迎风格式建立可变流量调节模式下的IEHS调度模型,以期充分挖掘区域供热系统的灵活性,促进可再生能源消纳。所构建的IEHS调度模型为含有大量非线性约束的条件分布鲁棒模型,难以直接求解。对此,通过对偶理论与条件风险价值近似方法将条件分布鲁棒模型转化为含非线性约束的确定性模型,并提出自适应McCormick算法用以求解非线性约束。通过不同规模案例仿真表明,所提模型能够降低IEHS的调度成本,所提算法在保证可行性的条件下快速求出问题的近似最优解,最优间隙小于千分之一。展开更多
In recent years,copper iodide(CuI)is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility,high optical absorption and large exciton binding energy.However,the spectral response and the photo...In recent years,copper iodide(CuI)is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility,high optical absorption and large exciton binding energy.However,the spectral response and the photoelectric conversion efficiency are limited for CuI-based heterostructure devices,which is related to the difficulty in fabrication of high-quality CuI thin films on other semiconductors.In this study,a p-CuI/n-Si photodiode has been fabricated through a facile solid-phase iodination method.Although the CuI thin film is polycrystalline with obvious structural defects,the CuI/Si diode shows a high weak-light sensitivity and a high rectification ratio of 7.6×10^(4),indicating a good defect tolerance.This is because of the unilateral heterojunction behavior of the formation of the p^(+)n diode.In this work,the mechanism of photocurrent of the p^(+)n diode has been studied comprehensively.Different monochromatic lasers with wavelengths of 400,505,635 and 780 nm have been selected for testing the photoresponse.Under zero-bias voltage,the device is a unilateral heterojunction,and only visible light can be absorbed at the Si side.On the other hand,when a bias voltage of-3 V is applied,the photodiode is switched to a broader“UV-visible”band response mode.Therefore,the detection wavelength range can be switched between the“Visible”and“UV-visible”bands by adjusting the bias voltage.Moreover,the obtained CuI/Si diode was very sensitive to weak light illumination.A very high detectivity of 10^(13)-1014 Jones can be achieved with a power density as low as 0.5μW/cm^(2),which is significantly higher than that of other Cu-based diodes.These findings underscore the high application potential of CuI when integrated with the traditional Si industry.展开更多
文摘电-热综合能源系统(integrated electricity and heat system,IEHS)可以有效促进可再生能源消纳。构建区域供热系统精细化模型与合理的可再生能源不确定性出力模型是调度IEHS的两个难点。该文首先提出计及可变流量调节模式的IEHS条件分布鲁棒优化调度模型,主要有两点改进:通过构建基于修正模糊集的条件分布鲁棒模型建模可再生能源预测误差与其预测出力信息之间的内在依赖性,提升调度结果安全性与最优性;基于流体能量守恒方程与一阶隐式迎风格式建立可变流量调节模式下的IEHS调度模型,以期充分挖掘区域供热系统的灵活性,促进可再生能源消纳。所构建的IEHS调度模型为含有大量非线性约束的条件分布鲁棒模型,难以直接求解。对此,通过对偶理论与条件风险价值近似方法将条件分布鲁棒模型转化为含非线性约束的确定性模型,并提出自适应McCormick算法用以求解非线性约束。通过不同规模案例仿真表明,所提模型能够降低IEHS的调度成本,所提算法在保证可行性的条件下快速求出问题的近似最优解,最优间隙小于千分之一。
基金National Natural Science Foundation of China(62074056)Fundamental Research Funds for the Central Universities。
文摘In recent years,copper iodide(CuI)is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility,high optical absorption and large exciton binding energy.However,the spectral response and the photoelectric conversion efficiency are limited for CuI-based heterostructure devices,which is related to the difficulty in fabrication of high-quality CuI thin films on other semiconductors.In this study,a p-CuI/n-Si photodiode has been fabricated through a facile solid-phase iodination method.Although the CuI thin film is polycrystalline with obvious structural defects,the CuI/Si diode shows a high weak-light sensitivity and a high rectification ratio of 7.6×10^(4),indicating a good defect tolerance.This is because of the unilateral heterojunction behavior of the formation of the p^(+)n diode.In this work,the mechanism of photocurrent of the p^(+)n diode has been studied comprehensively.Different monochromatic lasers with wavelengths of 400,505,635 and 780 nm have been selected for testing the photoresponse.Under zero-bias voltage,the device is a unilateral heterojunction,and only visible light can be absorbed at the Si side.On the other hand,when a bias voltage of-3 V is applied,the photodiode is switched to a broader“UV-visible”band response mode.Therefore,the detection wavelength range can be switched between the“Visible”and“UV-visible”bands by adjusting the bias voltage.Moreover,the obtained CuI/Si diode was very sensitive to weak light illumination.A very high detectivity of 10^(13)-1014 Jones can be achieved with a power density as low as 0.5μW/cm^(2),which is significantly higher than that of other Cu-based diodes.These findings underscore the high application potential of CuI when integrated with the traditional Si industry.
