The performance of a piecewise-stressed ZnO piezoelectric semiconductor nano?ber is studied with the multi-?eld coupling theory. The ?elds produced by equal and opposite forces as well as sinusoidally distributed forc...The performance of a piecewise-stressed ZnO piezoelectric semiconductor nano?ber is studied with the multi-?eld coupling theory. The ?elds produced by equal and opposite forces as well as sinusoidally distributed forces are examined. Speci?c distributions of potential barriers, wells, and regions with effective polarization charges are found. The results are fundamental for the mechanical tuning on piezoelectric semiconductor devices and piezotronics.展开更多
This paper studies the equilibrium structure parameters and the dependences of the elastic properties on pressure for rutile TiO2 by using the Cambridge Serial Total Energy Package (CASTEP) program in the frame of den...This paper studies the equilibrium structure parameters and the dependences of the elastic properties on pressure for rutile TiO2 by using the Cambridge Serial Total Energy Package (CASTEP) program in the frame of density functional theory. The obtained equilibrium structure parameters, bulk modulus B0 and its pressure derivative B0 are in good agreement with experiments and the theoretical results. The six independent elastic constants of rutile TiO2 under pressure are theoretically investigated for the first time. It is found that, as pressure increases, the elastic constants C11 ,C33 , C66 , C12 and C13 increase, the variation of elastic constant C 44 is not obvious and the anisotropy will weaken.展开更多
Based on the mechanical motion equation,Gauss’s law,and the current continuity condition,we study a few typical transient effects in a piezoelectric semiconductor(PS)fiber to realize the startup and turning-off funct...Based on the mechanical motion equation,Gauss’s law,and the current continuity condition,we study a few typical transient effects in a piezoelectric semiconductor(PS)fiber to realize the startup and turning-off functions of common piezotronic devices.In this study,the transient extensional vibration induced by a suddenly applied axial time-dependent force is examined in a cantilevered n-type ZnO nanofiber.Neither the magnitude of the loadings nor the doping concentration significantly affects the propagation caused by disturbance of the axial displacement.However,both of the factors play an important role in the propagation caused by disturbance of the electron concentrations.This indicates that the electromechanical coupling effect can be expected to directly determine the electronic performance of the devices.In addition,the assumption of previous simplified models which neglect the charge carriers in Gauss’s law is discussed,showing that this assumption has a little influence on the startup state when the doping concentration is smaller than 1021 m-3.This suggests that the screening effect of the carriers on the polarized electric field is much reduced in this situation,and that the state is gradually transforming into a pure piezoelectric state.Nevertheless,the carriers can provide a damping effect,which means that the previous simplified models do not sufficiently describe the turning-off state.The numerical results show that the present study has referential value with respect to the design of newly multifunctional PS devices.展开更多
After constructing a stress and strain model,the valence bands of in-plane biaxial tensile strained Si is calculated by k·p method.In the paper we calculate the accurate anisotropy valance bands and the splitting...After constructing a stress and strain model,the valence bands of in-plane biaxial tensile strained Si is calculated by k·p method.In the paper we calculate the accurate anisotropy valance bands and the splitting energy between light and heavy hole bands.The results show that the valance bands are highly distorted,and the anisotropy is more obvious.To obtain the density of states (DOS) effective mass,which is a very important parameter for device modeling,a DOS effective mass model of biaxial tensile strained Si is constructed based on the valance band calculation.This model can be directly used in the device model of metal-oxide semiconductor field effect transistor (MOSFET).It also a provides valuable reference for biaxial tensile strained silicon MOSFET design.展开更多
We study the bending of a two-layer piezoelectric semiconductor plate(bimorph).The macroscopic theory of piezoelectric semiconductors is employed.A set of two-dimensional plate equations is derived from the three-dime...We study the bending of a two-layer piezoelectric semiconductor plate(bimorph).The macroscopic theory of piezoelectric semiconductors is employed.A set of two-dimensional plate equations is derived from the three-dimensional equations.The plate equations exhibit direct couplings among bending,electric polarization along the plate thickness,and mobile charges.In the case of pure bending,a combination of physical and geometric parameters is identified which characterizes the strength of the interaction between the mechanical load and the distribution of mobile charges.In the bending of a rectangular plate under a distributed transverse mechanical load,it is shown that mobile charge distributions and potential barriers/wells develop in the plate.When the mechanical load is local and self-balanced,the induced carrier distributions and potential barriers/wells are also localized near the loading area.The results are fundamentally useful for mechanically manipulating mobile charges in piezoelectric semiconductor devices.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.11672113 and 51435006)the Key Laboratory Project of Hubei Province of China(No.2016CFA073)
文摘The performance of a piecewise-stressed ZnO piezoelectric semiconductor nano?ber is studied with the multi-?eld coupling theory. The ?elds produced by equal and opposite forces as well as sinusoidally distributed forces are examined. Speci?c distributions of potential barriers, wells, and regions with effective polarization charges are found. The results are fundamental for the mechanical tuning on piezoelectric semiconductor devices and piezotronics.
基金Project supported by the National Natural Science Foundation of China (Grant No 10576020)the NSAF (Grant No 10776022)
文摘This paper studies the equilibrium structure parameters and the dependences of the elastic properties on pressure for rutile TiO2 by using the Cambridge Serial Total Energy Package (CASTEP) program in the frame of density functional theory. The obtained equilibrium structure parameters, bulk modulus B0 and its pressure derivative B0 are in good agreement with experiments and the theoretical results. The six independent elastic constants of rutile TiO2 under pressure are theoretically investigated for the first time. It is found that, as pressure increases, the elastic constants C11 ,C33 , C66 , C12 and C13 increase, the variation of elastic constant C 44 is not obvious and the anisotropy will weaken.
基金the National Natural Science Foundation of China(No.11972164)the Key Laboratory Project of Hubei Province of China(No.2016CFA073)。
文摘Based on the mechanical motion equation,Gauss’s law,and the current continuity condition,we study a few typical transient effects in a piezoelectric semiconductor(PS)fiber to realize the startup and turning-off functions of common piezotronic devices.In this study,the transient extensional vibration induced by a suddenly applied axial time-dependent force is examined in a cantilevered n-type ZnO nanofiber.Neither the magnitude of the loadings nor the doping concentration significantly affects the propagation caused by disturbance of the axial displacement.However,both of the factors play an important role in the propagation caused by disturbance of the electron concentrations.This indicates that the electromechanical coupling effect can be expected to directly determine the electronic performance of the devices.In addition,the assumption of previous simplified models which neglect the charge carriers in Gauss’s law is discussed,showing that this assumption has a little influence on the startup state when the doping concentration is smaller than 1021 m-3.This suggests that the screening effect of the carriers on the polarized electric field is much reduced in this situation,and that the state is gradually transforming into a pure piezoelectric state.Nevertheless,the carriers can provide a damping effect,which means that the previous simplified models do not sufficiently describe the turning-off state.The numerical results show that the present study has referential value with respect to the design of newly multifunctional PS devices.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005)the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No. 78083)
文摘After constructing a stress and strain model,the valence bands of in-plane biaxial tensile strained Si is calculated by k·p method.In the paper we calculate the accurate anisotropy valance bands and the splitting energy between light and heavy hole bands.The results show that the valance bands are highly distorted,and the anisotropy is more obvious.To obtain the density of states (DOS) effective mass,which is a very important parameter for device modeling,a DOS effective mass model of biaxial tensile strained Si is constructed based on the valance band calculation.This model can be directly used in the device model of metal-oxide semiconductor field effect transistor (MOSFET).It also a provides valuable reference for biaxial tensile strained silicon MOSFET design.
基金Project supported by the National Natural Science Foundation of China(Nos.12072167 and 11972199)the Natural Science Foundation of Zhejiang Province of China(Nos.LZ22A020001 and LGG19A020001)。
文摘We study the bending of a two-layer piezoelectric semiconductor plate(bimorph).The macroscopic theory of piezoelectric semiconductors is employed.A set of two-dimensional plate equations is derived from the three-dimensional equations.The plate equations exhibit direct couplings among bending,electric polarization along the plate thickness,and mobile charges.In the case of pure bending,a combination of physical and geometric parameters is identified which characterizes the strength of the interaction between the mechanical load and the distribution of mobile charges.In the bending of a rectangular plate under a distributed transverse mechanical load,it is shown that mobile charge distributions and potential barriers/wells develop in the plate.When the mechanical load is local and self-balanced,the induced carrier distributions and potential barriers/wells are also localized near the loading area.The results are fundamentally useful for mechanically manipulating mobile charges in piezoelectric semiconductor devices.
