Porous silicon samples are prepared by pulse electrochemical etching and DC electrochemical etching. The effects of different preparation methods on luminescent characterization of porous silicon are investigated. Com...Porous silicon samples are prepared by pulse electrochemical etching and DC electrochemical etching. The effects of different preparation methods on luminescent characterization of porous silicon are investigated. Compared with DC electrochemical etching, pulse electrochemical etching produces the porous silicon characterized by a more even surface, a stronger luminescence and a PL blue shift to a certain degree.展开更多
Porous silicon prepared by pulse electro-etching is heat-treatedin O_2 atmosphere with an enhancement of its PI. peak and animprovement of its PL stability. The PL peak of a sample poroussilicon treated in O_2 atmosph...Porous silicon prepared by pulse electro-etching is heat-treatedin O_2 atmosphere with an enhancement of its PI. peak and animprovement of its PL stability. The PL peak of a sample poroussilicon treated in O_2 atmosphere at 1000 ℃ presents itself a three--peak structure and, compared with an un-- heat--treated sample,there exists blue shift of ～ 40 nm.展开更多
文摘Porous silicon samples are prepared by pulse electrochemical etching and DC electrochemical etching. The effects of different preparation methods on luminescent characterization of porous silicon are investigated. Compared with DC electrochemical etching, pulse electrochemical etching produces the porous silicon characterized by a more even surface, a stronger luminescence and a PL blue shift to a certain degree.
文摘Porous silicon prepared by pulse electro-etching is heat-treatedin O_2 atmosphere with an enhancement of its PI. peak and animprovement of its PL stability. The PL peak of a sample poroussilicon treated in O_2 atmosphere at 1000 ℃ presents itself a three--peak structure and, compared with an un-- heat--treated sample,there exists blue shift of ～ 40 nm.
