In this work, we investigate the Co-Si reaction, the Co growth mode at room temperature, diffusion be- haviour as well as morphology evolution during annealing on both H-terminated and clean Si(001) and Si(111) sur- f...In this work, we investigate the Co-Si reaction, the Co growth mode at room temperature, diffusion be- haviour as well as morphology evolution during annealing on both H-terminated and clean Si(001) and Si(111) sur- faces. From in-situ X-ray photoelectron spectroscopy (XPS) investigation, “Co-Si” reaction appears to occur on both H-terminated and clean surfaces at room temperature (RT) and the silicide crystallinity is improved upon annealing. Co growth mode on H-terminated Si surfaces occurs in a pseudo layer-by-layer manner while small close-packed is- land growth mode is observed on the clean Si surface. Upon annealing at different temperatures, Co atom concentra- tion decreases versus annealing time, which in part is attributed to Co atoms inward diffusion. The diffusion behav- iour on both types of surfaces demonstrates a similar trend. Morphology study using ex-situ atomic force microscopy (AFM) shows that the islands formed on Si(001) surface after annealing at 700 °C are elongated with growth direc- tions alternate between the two perpendicular [ 110 ] and [110] directions. Triangular islands are observed on Si (111) surface.展开更多
文摘In this work, we investigate the Co-Si reaction, the Co growth mode at room temperature, diffusion be- haviour as well as morphology evolution during annealing on both H-terminated and clean Si(001) and Si(111) sur- faces. From in-situ X-ray photoelectron spectroscopy (XPS) investigation, “Co-Si” reaction appears to occur on both H-terminated and clean surfaces at room temperature (RT) and the silicide crystallinity is improved upon annealing. Co growth mode on H-terminated Si surfaces occurs in a pseudo layer-by-layer manner while small close-packed is- land growth mode is observed on the clean Si surface. Upon annealing at different temperatures, Co atom concentra- tion decreases versus annealing time, which in part is attributed to Co atoms inward diffusion. The diffusion behav- iour on both types of surfaces demonstrates a similar trend. Morphology study using ex-situ atomic force microscopy (AFM) shows that the islands formed on Si(001) surface after annealing at 700 °C are elongated with growth direc- tions alternate between the two perpendicular [ 110 ] and [110] directions. Triangular islands are observed on Si (111) surface.
