一二次融合技术使得配电开关中二次智能传感单元近距离布置于一次高压电磁环境,配电开关因为电磁干扰产生大量故障。文中利用可控电弧放电原理,针对某型号10 k V一二次融合配电开关搭建了暂态电磁干扰模拟试验平台,获得了该户外一二次...一二次融合技术使得配电开关中二次智能传感单元近距离布置于一次高压电磁环境,配电开关因为电磁干扰产生大量故障。文中利用可控电弧放电原理,针对某型号10 k V一二次融合配电开关搭建了暂态电磁干扰模拟试验平台,获得了该户外一二次融合配电开关干扰信号,其中重点研究了智能传感器附近空间磁场规律;对配电终端(FTU)进行了屏蔽效能分析,计算了传感器合并单元电源线受扰情况。结果表明:一二次融合配电开关中智能传感器可能在持续强暂态电磁骚扰下发生严重故障,文中所研究的电磁暂态模拟试验系统可对智能传感器抗强电磁干扰能力进行考核,现有标准不能满足一二次融合结构下智能传感类设备抗强电磁干扰能力检测需求。展开更多
To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insul...To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insulating wafer with a thickness of 1 mm,triggered by a 1064-nm extrinsic laser beam with the rectangular spot,has been investigated experimentally.It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes,and then significantly boosts the PCSS toward different operation modes.On this basis,a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms.Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching,while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching,which have been proved by comparing the domain evolutions under different spot sizes.展开更多
文摘一二次融合技术使得配电开关中二次智能传感单元近距离布置于一次高压电磁环境,配电开关因为电磁干扰产生大量故障。文中利用可控电弧放电原理,针对某型号10 k V一二次融合配电开关搭建了暂态电磁干扰模拟试验平台,获得了该户外一二次融合配电开关干扰信号,其中重点研究了智能传感器附近空间磁场规律;对配电终端(FTU)进行了屏蔽效能分析,计算了传感器合并单元电源线受扰情况。结果表明:一二次融合配电开关中智能传感器可能在持续强暂态电磁骚扰下发生严重故障,文中所研究的电磁暂态模拟试验系统可对智能传感器抗强电磁干扰能力进行考核,现有标准不能满足一二次融合结构下智能传感类设备抗强电磁干扰能力检测需求。
基金supported in part by the Huxiang Youth Talent Support Program(No.2020RC3030)in part by the Foundation of State Key Laboratory of Pulsed Power Laser Technology(Nos.SKL2021ZR02 and SKL2021KF05)。
文摘To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insulating wafer with a thickness of 1 mm,triggered by a 1064-nm extrinsic laser beam with the rectangular spot,has been investigated experimentally.It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes,and then significantly boosts the PCSS toward different operation modes.On this basis,a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms.Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching,while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching,which have been proved by comparing the domain evolutions under different spot sizes.
