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HgCdTe材料汞空位浓度的计算
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作者 杨建荣 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1997年第4期241-245,共5页
用热力学原理探讨了Hg-Cd-Te固气两相平衡体系中材料参数和系统状态参数间的相互关系,给出了定量描述这些相互关系的理认计算公式和计算方法,通过对现有热力学常数的分析和评价,得到了计算所需的热力学常数以及和组分相关的经验公... 用热力学原理探讨了Hg-Cd-Te固气两相平衡体系中材料参数和系统状态参数间的相互关系,给出了定量描述这些相互关系的理认计算公式和计算方法,通过对现有热力学常数的分析和评价,得到了计算所需的热力学常数以及和组分相关的经验公式.计算结果揭示了不同状态下HgCdTe材料中汞空位及和其它点阵缺陷比较的情况.计算结果也给出了汞空位浓度为(5~10)×1015cm-3HgCdTe材料的P-T相图,这为红外焦平面器件所需的弱P型HgCdTe材料热处理工艺从理论上提供了参考依据.通过计算三相平衡线上空位浓度的分布,对汞空位在不同生长工艺的情况也有了进一步的认识. 展开更多
关键词 红外探测材料 空位浓度 计算
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Correlation between types of defects/vacancies of Bi2S3 nanostructures and their transient photocurrent
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作者 Mingyang Liu Luqing Wang +8 位作者 Pei Dong Liangliang Dong Xifan Wang Jarin Joyner Xiangjian Wan Boris I. Yakobson Robert Vajtai Pulickel Ajayan PolSpanos 《Nano Research》 SCIE EI CAS CSCD 2017年第7期2405-2414,共10页
Crystalline nanostructures possess defects/vacancies that affect their physical and chemical properties. In this regard, the electronic structure of materials can be effectively regulated through defect engineering; t... Crystalline nanostructures possess defects/vacancies that affect their physical and chemical properties. In this regard, the electronic structure of materials can be effectively regulated through defect engineering; therefore, the correlation between defects/vacancies and the properties of a material has attracted extensive attention. Here, we report the synthesis of Bi2S3 microspheres by nanorod assemblies with exposed {211} facets, and the investigation of the types and concentrations of defects/vacancies by means of positron annihilation spectrometry. Our studies revealed that an increase in the calcined temperature, from 350 to 400 ℃, led the predominant defect/vacancy densities to change from isolated bismuth vacancies (VBi) to septuple Bi3+-sulfur vacancy associates (VBiBiBiSSSS). Furthermore, the concentration of septuple BiB+-sulfur vacancy associates increased as the calcined temperature was increased from 400 to 450 ℃. The characterized transient photocurrent spectrum demonstrates that the photocurrent values closely correlate with the types and concentrations of the predominant defects/vacancies. Our theoretical computation, through first principles, showed that VBiBiBiSSSS strongly absorbs I2(sol), easily desorbs I-(sol), and enhances the electrocatalytic activity of the nanostructures. 展开更多
关键词 Bi2S3 microspheres nanorod assembly defects/vacancies positron annihilationspectrometry transient photocurrent
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