240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge ef...240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.展开更多
High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were ...High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.展开更多
A 10 × 10 solar-blind ultraviolet(UV) imaging array with double-layer wire structure was prepared based on Ga_(2)O_(3) film grown by atomic layer deposition. These single detection units in the array exhibit exce...A 10 × 10 solar-blind ultraviolet(UV) imaging array with double-layer wire structure was prepared based on Ga_(2)O_(3) film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-todark current ratio(PDCR) of 5.5 × 10^(5), responsivity(R) of 4.28 A/W, external quantum efficiency(EQE) of 2.1 × 10^(3)%, detectivity(D*) of 1.5 × 10^(14) Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 ℃, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga_(2)O_(3) solarblind UV detectors.展开更多
Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) we...Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.展开更多
The development of semiconductors is always accompanied by the progress in controllable doping techniques.Taking AlGaN-based ultraviolet(UV)emitters as an example,despite a peak wall-plug efficiency of 15.3%at the wav...The development of semiconductors is always accompanied by the progress in controllable doping techniques.Taking AlGaN-based ultraviolet(UV)emitters as an example,despite a peak wall-plug efficiency of 15.3%at the wavelength of 275 nm,there is still a huge gap in comparison with GaN-based visible light-emitting diodes(LEDs),mainly attributed to the inefficient doping of AlGaN with increase of the Al composition.First,p-doping of Al-rich AlGaN is a long-standing challenge and the low hole concentration seriously restricts the carrier injection efficiency.Although p-GaN cladding layers are widely adopted as a compromise,the high injection barrier of holes as well as the inevitable loss of light extraction cannot be neglected.While in terms of n-doping the main issue is the degradation of the electrical property when the Al composition exceeds 80%,resulting in a low electrical efficiency in sub-250 nm UV-LEDs.This review summarizes the recent advances and outlines the major challenges in the efficient doping of Al-rich AlGaN,meanwhile the corresponding approaches pursued to overcome the doping issues are discussed in detail.展开更多
基金This work was supported by National Key R&D Program of China(2022YFB3605103)the National Natural Science Foundation of China(62204241,U22A2084,62121005,and 61827813)+3 种基金the Natural Science Foundation of Jilin Province(20230101345JC,20230101360JC,and 20230101107JC)the Youth Innovation Promotion Association of CAS(2023223)the Young Elite Scientist Sponsorship Program By CAST(YESS20200182)the CAS Talents Program(E30122E4M0).
文摘240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.
基金Research of the photoelectric properties of theκ(ε)-Ga_(2)O_(3)films was supported by the Russian Science Foundation,grant number 20-79-10043-P.Fabrication of the ultraviolet detectors based on theκ(ε)-Ga_(2)O_(3)layers was supported by the grant under the Decree of the Government of the Rus-sian Federation No.220 of 09 April 2010(Agreement No.075-15-2022-1132 of 01 July 2022)Research of the structural prop-erties of theκ(ε)-Ga_(2)O_(3)was supported by the St.Petersburg State University,grant number 94034685.
文摘High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.
基金supported by Natural Science Basic Research Program of Shaanxi Province of China (No. 2023-JCYB-574)National Natural Science Foundation of China (Grant No. 62304178)。
文摘A 10 × 10 solar-blind ultraviolet(UV) imaging array with double-layer wire structure was prepared based on Ga_(2)O_(3) film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-todark current ratio(PDCR) of 5.5 × 10^(5), responsivity(R) of 4.28 A/W, external quantum efficiency(EQE) of 2.1 × 10^(3)%, detectivity(D*) of 1.5 × 10^(14) Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 ℃, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga_(2)O_(3) solarblind UV detectors.
基金support of the Russian Science Foundation,grant number 20-79-10043-P.
文摘Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.
基金This work was supported by the National Key Research and Development Program of China(No.2022YFB3605100)the National Natural Science Foundation of China(Nos.62234001,61927806,61974002,62135013,and 62075081)+1 种基金the Key-Area Research and Development Program of Guangdong Province(No.2020B010172001)the Major Scientific and Technological Innovation Project(MSTIP)of Shandong Province(No.2019JZZY010209).
文摘The development of semiconductors is always accompanied by the progress in controllable doping techniques.Taking AlGaN-based ultraviolet(UV)emitters as an example,despite a peak wall-plug efficiency of 15.3%at the wavelength of 275 nm,there is still a huge gap in comparison with GaN-based visible light-emitting diodes(LEDs),mainly attributed to the inefficient doping of AlGaN with increase of the Al composition.First,p-doping of Al-rich AlGaN is a long-standing challenge and the low hole concentration seriously restricts the carrier injection efficiency.Although p-GaN cladding layers are widely adopted as a compromise,the high injection barrier of holes as well as the inevitable loss of light extraction cannot be neglected.While in terms of n-doping the main issue is the degradation of the electrical property when the Al composition exceeds 80%,resulting in a low electrical efficiency in sub-250 nm UV-LEDs.This review summarizes the recent advances and outlines the major challenges in the efficient doping of Al-rich AlGaN,meanwhile the corresponding approaches pursued to overcome the doping issues are discussed in detail.
