DIAMOND FILMS DEPOSITED AT LOW TEMPERATURES MICROWAVE PLASMA-ASSISTED CVD METHOD

Low-temperature deposition of diamond thin films in the range of 280￣445℃ has been successfully carried out by microwave plasma-assisted CVD method.At lower deposition temperatures (280￣445℃),the large increase in the nucleation density and great improvement in the average surfae roughness of the diamond were observed. Results of low temperature deposition and characterization of diamond thin films obtained are presented.

过滤式阴极电弧沉积类金刚石薄膜工艺研究

研究了过滤式阴极电弧沉积系统的稳弧工艺参数，通过正交试验获得最佳稳弧参数。并且研究了弯管内置挡板对宏观粒子过滤效果的影响。采用喇曼光谱研究了偏压对生成的类金刚石薄膜性能的影响，证明－１００Ｖ偏压下获得的类金刚石薄膜有最佳的ＳＰ３含量。扫描电镜测试表明，在（１１１）硅基片上获得致密的膜，但在高速钢基体上沉膜堆积现象比较严重，不易获得优质类金刚石膜。同时也给出了类金刚石的原子力显微照片（ＡＦＭ），表明稳弧参数对类金刚石薄膜表面形貌有较大的影响。