In order to study the relationship between the triggering current, deuterium pressure and the excess heat, a series of experiments were made in a D/Pd gas-loading system. By comparing the system constants （k = AT//kP...In order to study the relationship between the triggering current, deuterium pressure and the excess heat, a series of experiments were made in a D/Pd gas-loading system. By comparing the system constants （k = AT//kP） in both nitrogen and deuterium atmosphere we found an optimum current （8 A） and a deuterium pressure （9 x 104 Pa） in which the system could release a maximum excess power （more than 80 W）. The reproducibility was 16/16 and the excess energy released in the longest experiment was about 300 MJ within 40 days, which was corresponding to 104 eV for each palladium atom. Analysis of the palladium surface with a SEM （scanning electron microscopy） and an EDS （energy dispersive spectrometer） revealed that some new surface topographical feature with concentrations of unexpected elements （such as Ag, Sn, Pb and Ca） appeared after the current triggering. The results implied that the excess heat might come from a nuclear transmutation.展开更多
应用电子束射线对单向微触发可控硅晶圆片进行不同条件的辐照,使用晶体管图示仪测试其门极触发电流和通态电压,研究了辐照剂量、剂量率对门极触发电流和通态电压的影响,使用不同的退火工艺对辐照后的可控硅进行退火实验,监测其退火后参...应用电子束射线对单向微触发可控硅晶圆片进行不同条件的辐照,使用晶体管图示仪测试其门极触发电流和通态电压,研究了辐照剂量、剂量率对门极触发电流和通态电压的影响,使用不同的退火工艺对辐照后的可控硅进行退火实验,监测其退火后参数的变化。实验表明,门极触发电流随辐照剂量的增加而迅速增大,辐照剂量在20 k Gy以下时,通态电压基本没有增加;门极触发电流在可控硅约225℃以下退火时,存在反退火现象,继续提高退火温度又表现出正常的退火结果;1.5 Me V电子辐照技术不仅能有效提高可控硅门极触发电流,还能提高晶圆片门极触发电流的一致性。展开更多
文摘In order to study the relationship between the triggering current, deuterium pressure and the excess heat, a series of experiments were made in a D/Pd gas-loading system. By comparing the system constants （k = AT//kP） in both nitrogen and deuterium atmosphere we found an optimum current （8 A） and a deuterium pressure （9 x 104 Pa） in which the system could release a maximum excess power （more than 80 W）. The reproducibility was 16/16 and the excess energy released in the longest experiment was about 300 MJ within 40 days, which was corresponding to 104 eV for each palladium atom. Analysis of the palladium surface with a SEM （scanning electron microscopy） and an EDS （energy dispersive spectrometer） revealed that some new surface topographical feature with concentrations of unexpected elements （such as Ag, Sn, Pb and Ca） appeared after the current triggering. The results implied that the excess heat might come from a nuclear transmutation.
文摘应用电子束射线对单向微触发可控硅晶圆片进行不同条件的辐照,使用晶体管图示仪测试其门极触发电流和通态电压,研究了辐照剂量、剂量率对门极触发电流和通态电压的影响,使用不同的退火工艺对辐照后的可控硅进行退火实验,监测其退火后参数的变化。实验表明,门极触发电流随辐照剂量的增加而迅速增大,辐照剂量在20 k Gy以下时,通态电压基本没有增加;门极触发电流在可控硅约225℃以下退火时,存在反退火现象,继续提高退火温度又表现出正常的退火结果;1.5 Me V电子辐照技术不仅能有效提高可控硅门极触发电流,还能提高晶圆片门极触发电流的一致性。
