Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results ...Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results show that nanogrinding can produce flatness less than 1.0μm and a surface roughness Ra of 0.42nm. It is found that nanogrinding is capable of producing much flatter SiC wafers with a lower damage than double side lapping and mechanical polishing in much less time and it can replace double side lapping and mechanical polishing and reduce the removal amount of chemical mechanical polishing.展开更多
The surface grinding temperature of the silicon wafer ground by diamond wheels is studied.Rudimentally,the properties of the surface grinding temperature generated by two grinding methods,ground by straight and cup wh...The surface grinding temperature of the silicon wafer ground by diamond wheels is studied.Rudimentally,the properties of the surface grinding temperature generated by two grinding methods,ground by straight and cup wheels respectively,are analyzed.In addition,considering the effects of grain size and grinding depth on surface grinding temperature during these two grinding processes,significant results and conclusions are obtained from experimental research.展开更多
The effects of basicity and temperature on the reduction process of Hongge high-chromium vanadium-titanium magnetite(HCVTM)sinter were investigated in this work.The main characterization methods of X-ray fluorescence(...The effects of basicity and temperature on the reduction process of Hongge high-chromium vanadium-titanium magnetite(HCVTM)sinter were investigated in this work.The main characterization methods of X-ray fluorescence(XRF),X-ray diffraction(XRD),scanning electron microscope(SEM),and metallographic microscope were employed in this study.In this work,the reduction of HCVTM sinter with different temperature and basicity were experimented.The Fe,FeO,and TiO in reductive samples increase with increasing basicity and temperatures.The increase of basicity and temperature is favorable to the reduction of HCVTM sinter.The Fe phase has out-migration tendency to the surface of sinter while the perovskite and silicate phases have in-migration tendency to the inside of sinter.The reduction degradation index(RDI)decreases while the reduction index(RI)increases with increasing basicity.The RI increases from 67.14%to 82.09%with increasing temperature from 1073 K to 1373 K.展开更多
基金Project (50975040) supported by the National Natural Science Foundation of China
文摘Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results show that nanogrinding can produce flatness less than 1.0μm and a surface roughness Ra of 0.42nm. It is found that nanogrinding is capable of producing much flatter SiC wafers with a lower damage than double side lapping and mechanical polishing in much less time and it can replace double side lapping and mechanical polishing and reduce the removal amount of chemical mechanical polishing.
基金Supported by the Open L ab.Foundation of Educational Ministryof China
文摘The surface grinding temperature of the silicon wafer ground by diamond wheels is studied.Rudimentally,the properties of the surface grinding temperature generated by two grinding methods,ground by straight and cup wheels respectively,are analyzed.In addition,considering the effects of grain size and grinding depth on surface grinding temperature during these two grinding processes,significant results and conclusions are obtained from experimental research.
基金Project(2013CB632603)supported by the National Basic Research Program of ChinaProject(2015BAB19B02)supported by the National Key Technology R&D Program of ChinaProjects(51674084,51174051,51574082)supported by National Natural Science Foundation of China
文摘The effects of basicity and temperature on the reduction process of Hongge high-chromium vanadium-titanium magnetite(HCVTM)sinter were investigated in this work.The main characterization methods of X-ray fluorescence(XRF),X-ray diffraction(XRD),scanning electron microscope(SEM),and metallographic microscope were employed in this study.In this work,the reduction of HCVTM sinter with different temperature and basicity were experimented.The Fe,FeO,and TiO in reductive samples increase with increasing basicity and temperatures.The increase of basicity and temperature is favorable to the reduction of HCVTM sinter.The Fe phase has out-migration tendency to the surface of sinter while the perovskite and silicate phases have in-migration tendency to the inside of sinter.The reduction degradation index(RDI)decreases while the reduction index(RI)increases with increasing basicity.The RI increases from 67.14%to 82.09%with increasing temperature from 1073 K to 1373 K.
