为了给我国F级燃气轮机燃烧系统的燃烧调整与自主升级提供技术参考,以某F级燃气轮机环管燃烧室单筒为三维物理模型,采用Realizable k-ε湍流模型与小火焰生成流形(flamelet generated manifold,FGM)燃烧反应模型,研究了过量空气系数、...为了给我国F级燃气轮机燃烧系统的燃烧调整与自主升级提供技术参考,以某F级燃气轮机环管燃烧室单筒为三维物理模型,采用Realizable k-ε湍流模型与小火焰生成流形(flamelet generated manifold,FGM)燃烧反应模型,研究了过量空气系数、主旋流叶片偏转角度及值班燃料占比等因素对燃烧室单筒内的温度分布规律、燃烧污染物NO_(x)的生成与排放特性的影响。结果表明:随着燃烧室单筒入口过量空气系数的增加,燃烧室单筒出口的平均温度与最大温度均下降,出口温度分布系数(out-let temperature distribution factor,OTDF)略微上升,出口温度分布均匀性降低,但NO_(x)排放量呈下降趋势;适当增大主旋流叶片偏转角度,可以降低燃烧室单筒内及过渡段出口截面的最高温度并提升温度均匀性,但出口NO_(x)排放量则呈先急剧下降后缓慢上升的趋势;在总燃料流量不变的情况下,值班燃料占比(质量分数)从4%增大到8%时,燃烧室单筒出口温度水平的变化很小,但会导致NO_(x)排放量明显增加。展开更多
对Ni Cr Fe V Ga系合金进行了X射线衍射和热机械分析(TMA)。结果表明,在室温至940℃范围内,合金的晶格点阵参数逐渐增大,线胀系数为正;在940～1150℃范围内,合金的晶格点阵参数逐渐降低,线胀系数为负,进行了K效应转变。用热力学理论对...对Ni Cr Fe V Ga系合金进行了X射线衍射和热机械分析(TMA)。结果表明,在室温至940℃范围内,合金的晶格点阵参数逐渐增大,线胀系数为正;在940～1150℃范围内,合金的晶格点阵参数逐渐降低,线胀系数为负,进行了K效应转变。用热力学理论对实验结果进行了解释。展开更多
Ga<sub>2</sub>O<sub>3</sub> thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C fo...Ga<sub>2</sub>O<sub>3</sub> thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga<sub>2</sub>O<sub>3</sub> thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.展开更多
文摘为了给我国F级燃气轮机燃烧系统的燃烧调整与自主升级提供技术参考,以某F级燃气轮机环管燃烧室单筒为三维物理模型,采用Realizable k-ε湍流模型与小火焰生成流形(flamelet generated manifold,FGM)燃烧反应模型,研究了过量空气系数、主旋流叶片偏转角度及值班燃料占比等因素对燃烧室单筒内的温度分布规律、燃烧污染物NO_(x)的生成与排放特性的影响。结果表明:随着燃烧室单筒入口过量空气系数的增加,燃烧室单筒出口的平均温度与最大温度均下降,出口温度分布系数(out-let temperature distribution factor,OTDF)略微上升,出口温度分布均匀性降低,但NO_(x)排放量呈下降趋势;适当增大主旋流叶片偏转角度,可以降低燃烧室单筒内及过渡段出口截面的最高温度并提升温度均匀性,但出口NO_(x)排放量则呈先急剧下降后缓慢上升的趋势;在总燃料流量不变的情况下,值班燃料占比(质量分数)从4%增大到8%时,燃烧室单筒出口温度水平的变化很小,但会导致NO_(x)排放量明显增加。
文摘Ga<sub>2</sub>O<sub>3</sub> thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga<sub>2</sub>O<sub>3</sub> thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.
