Fluorescent-SiC （f-SiC）, which contains donor and acceptor impurities with optimum concentrations, has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair （DAP） recombination. This m...Fluorescent-SiC （f-SiC）, which contains donor and acceptor impurities with optimum concentrations, has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair （DAP） recombination. This material can be used as a substrate for a near UVlight-emitting diode （LED） stack, and leads to monolithic white LED device with suitable spectral property for general lighting applications. In this paper, we describe basic technologies of the white LED, such as optical properties of f-SiC substrate, and epitaxial growth of NUV stack on the f-SiC substrate.展开更多
基金Project supported by the New-Energy and Industrial Technology Development Organization,Japan
文摘Fluorescent-SiC （f-SiC）, which contains donor and acceptor impurities with optimum concentrations, has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair （DAP） recombination. This material can be used as a substrate for a near UVlight-emitting diode （LED） stack, and leads to monolithic white LED device with suitable spectral property for general lighting applications. In this paper, we describe basic technologies of the white LED, such as optical properties of f-SiC substrate, and epitaxial growth of NUV stack on the f-SiC substrate.
