The low-melting glass of Bi2O_(3)-B2O_(3)-SiO_(2)(BiBSi)system was used for the first time for laser sealing of vacuum glazing.Under the condition of constant boron content,how the structure and properties vary with B...The low-melting glass of Bi2O_(3)-B2O_(3)-SiO_(2)(BiBSi)system was used for the first time for laser sealing of vacuum glazing.Under the condition of constant boron content,how the structure and properties vary with Bi/Si ratio in low-melting glass was investigated.In addition,the relationships between laser power,low-melting glass solder with different Bi/Si ratios and laser sealing shear strength were revealed.The results show that a decrease in the Bi/Si ratio can cause a contraction of the glass network of the low-melting glass,leading to an increase of its characteristic temperature and a decrease of its coefficient of thermal expansion.During laser sealing,the copper ions in the low-melting glass play an endothermic role.A change in the Bi/Si ratio will affect the valence state transition of the copper ions in the low-melting glass.The absorbance of the low-melting glass does not follow the expected correlation with the Bi/Si ratio,but shows a linear correlation with the content of divalent copper ions.The greater the concentration of divalent copper ions,the greater the absorbance of the low-melting glass,and the lower the laser power required for laser sealing.The shear strength of the low melting glass solder after laser sealing was tested,and it was found that the maximum shear strength of Z1 glass sample was the highest up to 2.67 MPa.展开更多
The electrochemical behaviors and coupling behaviors of the Mg2Si and Si phases with α（Al） were investigated, the corrosion morphologies of Al alloys containing Mg2Si and Si particles were observed, and the corrosi...The electrochemical behaviors and coupling behaviors of the Mg2Si and Si phases with α（Al） were investigated, the corrosion morphologies of Al alloys containing Mg2Si and Si particles were observed, and the corrosion mechanism associated with them in Al-Mg-Si alloys was advanced. The results show that Si particle is always cathodic to the alloy base, Mg2Si is anodic to the alloy base and corrosion occurs on its surface at the beginning. However, during its corrosion process, the preferential dissolution of Mg and the enrichment of Si make Mg2Si transform to cathode from anode, leading to the anodic dissolution and corrosion of the alloy base at its adjacent periphery at a later stage. As the mole ratio of Mg to Si in an Al-Mg-Si alloy is less than 1.73, it contains Mg2Si and Si particles simultaneously in the grain boundary area, and corrosion initiates on the Mg2Si surface and the precipitate-free zone （PFZ） at the adjacent periphery of Si particle. As corrosion time is extended, Si particle leads to severe anodic dissolution and corrosion of the PFZ at its adjacent periphery, expedites the polarity transformation between Mg2Si and the PFZ and accelerates the corrosion of PFZ at the adjacent periphery of Mg2Si particle.展开更多
In this paper,the effect of the Si content on microstructure evolution,mechanical properties,and fracture behavior of the Al-xSi/AZ91D bimetallic composites prepared by compound casting was investigated systematically...In this paper,the effect of the Si content on microstructure evolution,mechanical properties,and fracture behavior of the Al-xSi/AZ91D bimetallic composites prepared by compound casting was investigated systematically.The obtained results showed that all the Al-xSi/AZ91D bimetallic composites had a metallurgical reaction layer(MRL),whose thickness increased with increasing Si content for the hypoeutectic Al-Si/AZ91D composites,while the hypereutectic Al-Si/AZ91D composites were opposite.The MRL included eutectic layer(E layer),intermetallic compound layer(IMC layer)and transition region layer(T layer).In the IMC layer,the hypereutectic Al-Si/AZ91D composites contained some Si solid solution and flocculent Mg_(2)Si+Al-Mg IMCs phases not presented in the hypoeutectic Al-Si/AZ91D composites.Besides,increasing Si content,the thickness proportion of the T layer increased,forming an inconsistent preferred orientation of the MRL.The shear strengths of the Al-xSi/AZ91D bimetallic composites enhanced with increasing Si content,and the Al-15Si/AZ91D composite obtained a maximum shear strength of 58.6 MPa,which was 73.4% higher than the Al-6Si/AZ91D composite.The fractures of the Al-xSi/AZ91D bimetallic composites transformed from the T layer into the E layer with the increase of the Si content.The improvement of the shear strength of the Al-xSi/AZ91D bimetallic composites was attributed to the synergistic action of the Mg_(2)Si particle reinforcement,the reduction of oxidizing inclusions and the ratio of Al-Mg IMCs as well as the orientation change of the MRL.展开更多
The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive positi...The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.展开更多
通过扫描电镜/能谱、X射线衍射以及金相分析,针对含0.3%Fe(质量分数)的Al Mg Si Cu铝合金,研究了Mn含量对其结晶相的影响。研究表明:合金在铸造过程中形成的结晶相为Al1.9CuMg4.1Si3.3,Al5(FeMn)Si,Al8(FeMn)2Si以及少量的Mg2Si;增大含M...通过扫描电镜/能谱、X射线衍射以及金相分析,针对含0.3%Fe(质量分数)的Al Mg Si Cu铝合金,研究了Mn含量对其结晶相的影响。研究表明:合金在铸造过程中形成的结晶相为Al1.9CuMg4.1Si3.3,Al5(FeMn)Si,Al8(FeMn)2Si以及少量的Mg2Si;增大含Mn量,合金中AlFeMnSi型结晶相数量增多;对合金进行均匀化处理时,Al1.9CuMg4.1Si3.3相完全溶解,发生Al5(FeMn)Si向Al8(FeMn)2Si相的转变;对合金进行轧制及最终热处理后,结晶相碎化且沿轧向呈纤维状分布,但结晶相的类型不变。展开更多
基金Funded by the National Natural Science Foundation of China(No.52472012)Opening Project of State Silica-Based Materials Laboratory of Anhui Province(No.2022KF11)the Research and Development of Glass Powder for Laser Sealing and Its Sealing Technology(No.K24556)。
文摘The low-melting glass of Bi2O_(3)-B2O_(3)-SiO_(2)(BiBSi)system was used for the first time for laser sealing of vacuum glazing.Under the condition of constant boron content,how the structure and properties vary with Bi/Si ratio in low-melting glass was investigated.In addition,the relationships between laser power,low-melting glass solder with different Bi/Si ratios and laser sealing shear strength were revealed.The results show that a decrease in the Bi/Si ratio can cause a contraction of the glass network of the low-melting glass,leading to an increase of its characteristic temperature and a decrease of its coefficient of thermal expansion.During laser sealing,the copper ions in the low-melting glass play an endothermic role.A change in the Bi/Si ratio will affect the valence state transition of the copper ions in the low-melting glass.The absorbance of the low-melting glass does not follow the expected correlation with the Bi/Si ratio,but shows a linear correlation with the content of divalent copper ions.The greater the concentration of divalent copper ions,the greater the absorbance of the low-melting glass,and the lower the laser power required for laser sealing.The shear strength of the low melting glass solder after laser sealing was tested,and it was found that the maximum shear strength of Z1 glass sample was the highest up to 2.67 MPa.
基金Project (21073162) supported by the National Natural Science Foundation of ChinaProject (2008) supported by the Scientific and Technological Projects of Ningxia, China+1 种基金Project (08JC1421600) supported by the Science and Technology Commission of Shanghai Municipality, ChinaProject (2008AZ2018) supported by the Science and Technology Bureau of Jiaxing City, China
文摘The electrochemical behaviors and coupling behaviors of the Mg2Si and Si phases with α（Al） were investigated, the corrosion morphologies of Al alloys containing Mg2Si and Si particles were observed, and the corrosion mechanism associated with them in Al-Mg-Si alloys was advanced. The results show that Si particle is always cathodic to the alloy base, Mg2Si is anodic to the alloy base and corrosion occurs on its surface at the beginning. However, during its corrosion process, the preferential dissolution of Mg and the enrichment of Si make Mg2Si transform to cathode from anode, leading to the anodic dissolution and corrosion of the alloy base at its adjacent periphery at a later stage. As the mole ratio of Mg to Si in an Al-Mg-Si alloy is less than 1.73, it contains Mg2Si and Si particles simultaneously in the grain boundary area, and corrosion initiates on the Mg2Si surface and the precipitate-free zone （PFZ） at the adjacent periphery of Si particle. As corrosion time is extended, Si particle leads to severe anodic dissolution and corrosion of the PFZ at its adjacent periphery, expedites the polarity transformation between Mg2Si and the PFZ and accelerates the corrosion of PFZ at the adjacent periphery of Mg2Si particle.
基金the supports provided by the National Natural Science Foundation of China(Nos.52075198 and 52271102)the China Postdoctoral Science Foundation(No.2021M691112)+1 种基金the State Key Lab of Advanced Metals and Materials(No.2021-ZD07)the Analytical and Testing Center,HUST。
文摘In this paper,the effect of the Si content on microstructure evolution,mechanical properties,and fracture behavior of the Al-xSi/AZ91D bimetallic composites prepared by compound casting was investigated systematically.The obtained results showed that all the Al-xSi/AZ91D bimetallic composites had a metallurgical reaction layer(MRL),whose thickness increased with increasing Si content for the hypoeutectic Al-Si/AZ91D composites,while the hypereutectic Al-Si/AZ91D composites were opposite.The MRL included eutectic layer(E layer),intermetallic compound layer(IMC layer)and transition region layer(T layer).In the IMC layer,the hypereutectic Al-Si/AZ91D composites contained some Si solid solution and flocculent Mg_(2)Si+Al-Mg IMCs phases not presented in the hypoeutectic Al-Si/AZ91D composites.Besides,increasing Si content,the thickness proportion of the T layer increased,forming an inconsistent preferred orientation of the MRL.The shear strengths of the Al-xSi/AZ91D bimetallic composites enhanced with increasing Si content,and the Al-15Si/AZ91D composite obtained a maximum shear strength of 58.6 MPa,which was 73.4% higher than the Al-6Si/AZ91D composite.The fractures of the Al-xSi/AZ91D bimetallic composites transformed from the T layer into the E layer with the increase of the Si content.The improvement of the shear strength of the Al-xSi/AZ91D bimetallic composites was attributed to the synergistic action of the Mg_(2)Si particle reinforcement,the reduction of oxidizing inclusions and the ratio of Al-Mg IMCs as well as the orientation change of the MRL.
基金financially supported by the Fundamental Research Funds for the Central Universities,China(No.2020CDJDPT001)the Chongqing Natural Science Foundation,China(No.cstc2021jcyj-msxm X0699)。
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61574171,61704127,11875229,51872251,and 12027813)。
文摘The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.
文摘通过扫描电镜/能谱、X射线衍射以及金相分析,针对含0.3%Fe(质量分数)的Al Mg Si Cu铝合金,研究了Mn含量对其结晶相的影响。研究表明:合金在铸造过程中形成的结晶相为Al1.9CuMg4.1Si3.3,Al5(FeMn)Si,Al8(FeMn)2Si以及少量的Mg2Si;增大含Mn量,合金中AlFeMnSi型结晶相数量增多;对合金进行均匀化处理时,Al1.9CuMg4.1Si3.3相完全溶解,发生Al5(FeMn)Si向Al8(FeMn)2Si相的转变;对合金进行轧制及最终热处理后,结晶相碎化且沿轧向呈纤维状分布,但结晶相的类型不变。
