Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was...Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the target current increased from 200 to 1150mA with Ar pressure increasing. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. At all the Ar pressures, the Cu films have mixture crystalline orientations of [111], [200] and [220] in the direction of the film growth. The film deposited at lower pressure shows more [111] orientation while that deposited at higher pressure has more [220] orientation. The amount of larger grains in the film prepared at 0.5Pa Ar pressure is slightly less than that prepared at 1.0Pa and 1.5Pa Ar pressures. The resistivities of the films prepared at three different Ar pressures represent few differences, about 3-4 times of that of bulk material. Besides the deposition rate increases with Ar pressure because of the increase in target current. The contribution of the bombardment of energetic reflected Argon atoms to these phenomena is discussed.展开更多
Cu2ZnSnS4 (CZTS) thin films were successfully prepared by sulfurization of ion bean sputtered precursors on soda-lime glass substrate. The single phase of stannite-type structure CZTS films were obtained as revealed i...Cu2ZnSnS4 (CZTS) thin films were successfully prepared by sulfurization of ion bean sputtered precursors on soda-lime glass substrate. The single phase of stannite-type structure CZTS films were obtained as revealed in EDS and XRD analysis when the ratios of the constituents of CZTS thin films are close to stoichiometric by optimizing the conditions of precursor preparation and sulfurization. A low sheet resistivity as about 0.156 Ω·cm and a high absorption coefficient as 1×104 cm-1 were achieved in this method by Hall effect measurements and UV-VIS spectrophotometer. The optical band-gap energy of the CZTS sample is about 1.51 eV, which is very close to the optimum value for a solar-cell absorber.展开更多
CoPt thin films with various Cu contents varying from 0 vol.% to 21.5 vol.% were deposited on glass substrates by magnetron sputtering. The effects of Cu additive on the structural and magnetic properties and the orde...CoPt thin films with various Cu contents varying from 0 vol.% to 21.5 vol.% were deposited on glass substrates by magnetron sputtering. The effects of Cu additive on the structural and magnetic properties and the ordering temperature of CoPt films were investigated in detail. The results show that the Cu in CoPt films plays an important role in promoting the ordering parameter S and reducing the ordering temperature of CoPt films. A nearly perfect （001） texture was obtained in a CoPt film doped with 15.3 vol.% Cu. Besides, the preferred orientation of the CoPt film can be changed by annealing temperature. The perpendicular growth of the CoPt film is favored at a high annealing temperature.展开更多
ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type （001） Si and glass substrates at room temperature. The mor- ph...ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type （001） Si and glass substrates at room temperature. The mor- phology, structure, optical, and electrical properties of the multilayer films were characterized by field emission scanning electron microscope （FESEM）, X-ray diffraction （XRD）, UV/Vis spectrophotometer, and Hall effect mea- surement system. The influence of Cu layer thickness and the oxygen pressure in sputtering atmosphere on the film properties were studied. ZnO/Cu/ZnO transparent conduc- tive film fabricated in pure Ar atmosphere with 10 nm Cu layer thickness has the best performance： resistivity of 2.3 × 10^-4 Ω.cm, carrier concentration of 6.44 × 10^16 cm-2, mobility of 4.51 cm2.（V.s）-1, and acceptable aver- age transmittance of 80 % in the visible range. The trans- mittance and conductivity of the films fabricated with oxygen are lower than those of the films fabricated without oxygen, which indicates that oxygen atmosphere does not improve the optical and electrical properties of ZnO/Cu/ ZnO films.展开更多
Metallic copper（Cu） films were deposited on a Si （100） substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confinement. The morphology and structure of the f...Metallic copper（Cu） films were deposited on a Si （100） substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confinement. The morphology and structure of the films were examined by scanning electron microscopy （SEM）, atomic force microscope （AFM） and X-ray diffraction （XRD）. The surface average roughness of the deposited Cu films was characterized by AFM data and resistivity was measured by a four-point probe. The results show that the Cu films deposited with radio-frequency discharge enhanced ionization and external magnetic field confinement have a smooth surface, low surface roughness and low resistivity. The reasons may be that the radio-frequency discharge and external magnetic field enhance the plasma density, which further improves the ion bombardment effect under the same bias voltage conditions. Ion bombardment can obviously influence the growth features and characteristics of the deposited Cu films.展开更多
Thin films of copper indium gallium selenide Cu（In,Ga）Se2 （CIGS） were prepared by sequential elemental layer deposition in vacuum at room temperature. The as-deposited films were heated in vacuum for compound form...Thin films of copper indium gallium selenide Cu（In,Ga）Se2 （CIGS） were prepared by sequential elemental layer deposition in vacuum at room temperature. The as-deposited films were heated in vacuum for compound formation, and were studied at temperature as high as 1250℃ for the first time. These films were concurrently studied for their structural properties by X-ray diffraction （XRD） technique. The XRD analyses include phase transition studies, grain size variation and microstrain measurements with the reaction temperature and time.It has been observed that there are three distinct regions of variation in all these parameters. These regions belong to three temperature regimes： 〈450℃, 450-950℃, and 〉950℃. It is also seen that the compound formation starts at 250℃, with ternary phases appearing at 350℃ or above. Whereas, there is another phase shift at 950℃ without any preference to the quaternary compound.展开更多
We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also o...We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also obtained the highest efficiency(3.21%) in an AZO/p-Cu_2O heterojunction solar cell prepared with optimized pre-sputtering conditions using our newly developed multi-chamber sputtering system. This value achieves the same or higher characteristics than AZO/Cu_2O solar cells with a similar structure prepared by the pulse laser deposition method.展开更多
Cu films of30nm and 15 nm thick were deposited on MgO(001) substrates at 185℃ by dc plasma-sputtering at 1.9kv and 8 mA in pure Ar gas. A dc bias voltage Vs, of 0 V or -80 V was applied to the substrate during depos...Cu films of30nm and 15 nm thick were deposited on MgO(001) substrates at 185℃ by dc plasma-sputtering at 1.9kv and 8 mA in pure Ar gas. A dc bias voltage Vs, of 0 V or -80 V was applied to the substrate during deposition. Structural and electrical proper-ties have been investigated by cross-sectional transmission electron microscopy (XTEM), high resolution XTEM (XHRTEM) and by measuring temperature coefficient of electrical resistance (TCR;η) in the temperature interval of-135℃ to 0 ℃. The Cu film is pol- ycrystalline at Vs= 0 V while it epitaxially grows with Cu(00 )|| MgO(00 1) and Cu[0 10] || MgO[010] at Vs,=-80 V. However, the latter has a very rough surface. The change of η with film thickness and Vs is interpreted in terms of the structure change. Misfit dislocations and lattice expansion are induced along the MgO surface to relax the strain energy due to the lattice mismatch between Cu and MgO.展开更多
Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond （MCD） films. Its electrical field...Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond （MCD） films. Its electrical field emission behavior can be turned on at Eo = 2.6 V/μm, attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/#m. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron mi- croscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.展开更多
In this study, we have explored the ways to fabricate and optimize high-quality ultrathin YBa2 Cu3 O7-δ(YBCO) films grown on single-crystal(001) SrTiO3 substrates. Nearly atomic-flat YBCO films are obtained by pulsed...In this study, we have explored the ways to fabricate and optimize high-quality ultrathin YBa2 Cu3 O7-δ(YBCO) films grown on single-crystal(001) SrTiO3 substrates. Nearly atomic-flat YBCO films are obtained by pulsed laser deposition.Our result shows that the termination of SrTiO3 has only a negligible effect on the properties of YBCO. In contrast, we found that capping a non-superconducting oxide layer can generally enhance the superconductivity of YBCO. PrBa2 Cu3 O7,La2 CuO4, LaMnO3, SrTiO3, and LaAlO3 have been examined as capping layers, and the minimum thickness of superconducting YBCO with capping is ~ 2 unit cells–3 unit cells. This result might be useful in constructing good-performance YBCO-based field effect devices.展开更多
Copper sulfide thin films are deposited onto different substrates at room temperature using the thermal evaporation technique. X-ray diffraction spectra show that the film has an orthorhombicchalcocite （7-Cu2S） phas...Copper sulfide thin films are deposited onto different substrates at room temperature using the thermal evaporation technique. X-ray diffraction spectra show that the film has an orthorhombicchalcocite （7-Cu2S） phase. The atomic force microscopy images indicate that the film exhibits nanoparticles with an average size of nearly 44 nm. Specrtophotometric measurements for the transmittance and reflectance are carried out at normal incidence in a spectral wavelength range of 450 nm-2500 nm. The refractive index, n, as well as the absorption index, k is calculated. Some dispersion parameters are determined. The analyses of el and e2 reveal several absorption peaks. The analysis of the spectral behavior of the absorption coefficient, c~, in the absorption region reveals direct and indirect allowed transitions. The dark electrical resistivity is studied as a function of film thickness and temperature. Tellier＇s model is adopted for determining the mean free path and bulk resistance.展开更多
As one of the most widely used domestic fuels, the detection of possible leakages of Liquefied Petroleum (LP) gas from production plants, from cylinders during their storage, transport and usage is of utmost importanc...As one of the most widely used domestic fuels, the detection of possible leakages of Liquefied Petroleum (LP) gas from production plants, from cylinders during their storage, transport and usage is of utmost importance. This article discusses a study of the response of undoped and chlorine doped electrodeposited n-type Cuprous Oxide (Cu2O) films to of LP gas. Undoped n-type Cu2O films were fabricated in an electrolyte bath containing a solution of sodium acetate and cupric acetate whereas n-type chlorine doped Cu2O thin films were prepared by adding a 0.02 M cuprous chloride (CuCl2) into an electrolyte solution containing lactic acid, cupric sulfate and sodium hydroxide. The n-type conductivity of the deposited films was determined using spectral response measurements. The structural and morphological properties of the fabricated films were monitored using X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). Due to doping, the overall conductivity of the chlorine doped n-type Cu2O films increased by several orders of magnitude. The temperature dependent gas responses of both the undoped and chlorine doped n-type Cu2O thin films to the LP gas was monitored by measuring the electrical resistance (R), and using the contact probe method at a constant gas flow rate of 0.005 ml/s. Upon exposure to gases, both doped and undoped films showed a good response to the gas by increasing/decreasing the electrical resistance by ΔR. The undoped n-type Cu2O thin films showed a negative response (ΔR 2O thin films initially showed a positive response (ΔR > 0) to the LP gas which then reversed its sign to give a negative response which peaked at 52°C. The positive response shown by the chlorine doped Cu2O films vanished completely at 42°C.展开更多
Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology.Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied.It is...Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology.Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied.It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably improve the adhesive property of Cu-W thin films. Indentation and scratching test show that,the critical load is doubled over than the sample only sputter-cleaned by ion beam.The enhancing mechanism of ion beam assisting bombardment implanting of Cu-W thin films was analyzed.With the help of mid-energy Ar+ion beam,W atoms can diffuse into the Fe-substrate surface layer;Fe atoms in the substrate surface layer and W atoms interlace with one another;and microcosmic mechanical meshing and diffusing combination on atom-scale among the Fe and W atoms through the film/substrate interface can be formed.The wettability and thermal expansion properties of the W atoms diffusion zone containing plentiful W atoms are close to those of pure W or W-based Cu-W film.展开更多
YBa2Cu3O7-x（YBCO） films with co-doping BaTiO3（BTO） and Y2O3 nanostructures were prepared by metal organic deposition using trifluoroacetates（TFA-MOD）. The properties of the BTO/Y2O3co-doped YBCO films with diffe...YBa2Cu3O7-x（YBCO） films with co-doping BaTiO3（BTO） and Y2O3 nanostructures were prepared by metal organic deposition using trifluoroacetates（TFA-MOD）. The properties of the BTO/Y2O3co-doped YBCO films with different excess yttrium have been systematically studied by x-ray diffraction（XRD）, Raman spectra, and scanning electron microscope（SEM）. The optimized content of yttrium excess in the BTO/Y2O3co-doped YBCO films is 10 mol.%, and the critical current density is as high as - 17 mA/cm^2（self-field, 65 K） by the magnetic signal. In addition, the Y2Cu2O5 was formed when the content of yttrium excess increases to 24 mol.%, which may result in the deterioration of the superconducting properties and the microstructure. The unique combination of the different types of nanostructures of BTO and Y2O3 in the doped YBCO films, compared with the pure YBCO films and BTO doped YBCO films, enhances the critical current density（JC） not only at the self-magnetic field, but also in the applied magnetic field.展开更多
Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at l...Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy （XPS） depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.展开更多
Cu films with thickness of about 500nm were deposited on glass substrateswithout heating by DC magnetron sputtering in pure Ar gas of 1.0Pa. The sputtering powers weremaintained at 390V X 0.27A, 430V X 0.70A and 450V ...Cu films with thickness of about 500nm were deposited on glass substrateswithout heating by DC magnetron sputtering in pure Ar gas of 1.0Pa. The sputtering powers weremaintained at 390V X 0.27A, 430V X 0.70A and 450V X l.04A, and the corresponding deposition rates ofCu film reached 35nm/min, l04nm/min and 167nm/min. X-ray diffraction, scanning electron microscopyand atomic force microscopy were used to observe the structural characteristics of the films. Theresistance of the films was measured using four-point probe technique. The amount of larger grainsincreases and the resistivity of the films decreases evidently with an increase in sputtering power.It is considered that the increase in deposition rate with sputtering power mainly weakens theinfluence of residual gas atoms on the growing film, and increases substrate and gas temperatures,resulting in the increase in grain size and the decrease in resistivity of the Cu film.展开更多
基金The authors would like to thank Prof. Y.B. Wang and Mr. S. Liang of the Department of Material Physics for supporting AFM observations. The authors also would like to thank Ms. J.P. He of the State Key Laboratory for Advanced Metals and Materials for sup
文摘Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the target current increased from 200 to 1150mA with Ar pressure increasing. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. At all the Ar pressures, the Cu films have mixture crystalline orientations of [111], [200] and [220] in the direction of the film growth. The film deposited at lower pressure shows more [111] orientation while that deposited at higher pressure has more [220] orientation. The amount of larger grains in the film prepared at 0.5Pa Ar pressure is slightly less than that prepared at 1.0Pa and 1.5Pa Ar pressures. The resistivities of the films prepared at three different Ar pressures represent few differences, about 3-4 times of that of bulk material. Besides the deposition rate increases with Ar pressure because of the increase in target current. The contribution of the bombardment of energetic reflected Argon atoms to these phenomena is discussed.
基金This work was financially supported by the National Natural Science Foundation (No.10574106), the Science & Technology Plan of Guangdong Province (No.2003C105005) and the Scientific Research Foundation for the Returned Overseas Chinese Scholars of Chinese State Education Ministry (No.(2004)176).
文摘Cu2ZnSnS4 (CZTS) thin films were successfully prepared by sulfurization of ion bean sputtered precursors on soda-lime glass substrate. The single phase of stannite-type structure CZTS films were obtained as revealed in EDS and XRD analysis when the ratios of the constituents of CZTS thin films are close to stoichiometric by optimizing the conditions of precursor preparation and sulfurization. A low sheet resistivity as about 0.156 Ω·cm and a high absorption coefficient as 1×104 cm-1 were achieved in this method by Hall effect measurements and UV-VIS spectrophotometer. The optical band-gap energy of the CZTS sample is about 1.51 eV, which is very close to the optimum value for a solar-cell absorber.
基金supported by the Natural Science Foundation of China (No. 60776008)the Program for New Century Excellent Talents in Universities, China (No. NECT-07-0527)the Key Project of Chinese Ministry of Education (No. 207020)
文摘CoPt thin films with various Cu contents varying from 0 vol.% to 21.5 vol.% were deposited on glass substrates by magnetron sputtering. The effects of Cu additive on the structural and magnetic properties and the ordering temperature of CoPt films were investigated in detail. The results show that the Cu in CoPt films plays an important role in promoting the ordering parameter S and reducing the ordering temperature of CoPt films. A nearly perfect （001） texture was obtained in a CoPt film doped with 15.3 vol.% Cu. Besides, the preferred orientation of the CoPt film can be changed by annealing temperature. The perpendicular growth of the CoPt film is favored at a high annealing temperature.
基金financially supported by the National Nature Science Foundation of China (No. 21071098)the Project of International Cooperation of the Ministry of Science and Technology of China (No. 2011DFA50530)the Nanotechnology Program of Shanghai Science & Technology Committee (No. 12nm0504800)
文摘ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type （001） Si and glass substrates at room temperature. The mor- phology, structure, optical, and electrical properties of the multilayer films were characterized by field emission scanning electron microscope （FESEM）, X-ray diffraction （XRD）, UV/Vis spectrophotometer, and Hall effect mea- surement system. The influence of Cu layer thickness and the oxygen pressure in sputtering atmosphere on the film properties were studied. ZnO/Cu/ZnO transparent conduc- tive film fabricated in pure Ar atmosphere with 10 nm Cu layer thickness has the best performance： resistivity of 2.3 × 10^-4 Ω.cm, carrier concentration of 6.44 × 10^16 cm-2, mobility of 4.51 cm2.（V.s）-1, and acceptable aver- age transmittance of 80 % in the visible range. The trans- mittance and conductivity of the films fabricated with oxygen are lower than those of the films fabricated without oxygen, which indicates that oxygen atmosphere does not improve the optical and electrical properties of ZnO/Cu/ ZnO films.
基金National Natural Science Foundation of China(Nos.50277003,10505005)
文摘Metallic copper（Cu） films were deposited on a Si （100） substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confinement. The morphology and structure of the films were examined by scanning electron microscopy （SEM）, atomic force microscope （AFM） and X-ray diffraction （XRD）. The surface average roughness of the deposited Cu films was characterized by AFM data and resistivity was measured by a four-point probe. The results show that the Cu films deposited with radio-frequency discharge enhanced ionization and external magnetic field confinement have a smooth surface, low surface roughness and low resistivity. The reasons may be that the radio-frequency discharge and external magnetic field enhance the plasma density, which further improves the ion bombardment effect under the same bias voltage conditions. Ion bombardment can obviously influence the growth features and characteristics of the deposited Cu films.
文摘Thin films of copper indium gallium selenide Cu（In,Ga）Se2 （CIGS） were prepared by sequential elemental layer deposition in vacuum at room temperature. The as-deposited films were heated in vacuum for compound formation, and were studied at temperature as high as 1250℃ for the first time. These films were concurrently studied for their structural properties by X-ray diffraction （XRD） technique. The XRD analyses include phase transition studies, grain size variation and microstrain measurements with the reaction temperature and time.It has been observed that there are three distinct regions of variation in all these parameters. These regions belong to three temperature regimes： 〈450℃, 450-950℃, and 〉950℃. It is also seen that the compound formation starts at 250℃, with ternary phases appearing at 350℃ or above. Whereas, there is another phase shift at 950℃ without any preference to the quaternary compound.
基金partly supported by Grant-in-Aid for Scientific Research on Innovative Areas from the Ministry of Education, Culture, Sports, Science and Technology of Japan (No.15K04723)
文摘We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also obtained the highest efficiency(3.21%) in an AZO/p-Cu_2O heterojunction solar cell prepared with optimized pre-sputtering conditions using our newly developed multi-chamber sputtering system. This value achieves the same or higher characteristics than AZO/Cu_2O solar cells with a similar structure prepared by the pulse laser deposition method.
文摘Cu films of30nm and 15 nm thick were deposited on MgO(001) substrates at 185℃ by dc plasma-sputtering at 1.9kv and 8 mA in pure Ar gas. A dc bias voltage Vs, of 0 V or -80 V was applied to the substrate during deposition. Structural and electrical proper-ties have been investigated by cross-sectional transmission electron microscopy (XTEM), high resolution XTEM (XHRTEM) and by measuring temperature coefficient of electrical resistance (TCR;η) in the temperature interval of-135℃ to 0 ℃. The Cu film is pol- ycrystalline at Vs= 0 V while it epitaxially grows with Cu(00 )|| MgO(00 1) and Cu[0 10] || MgO[010] at Vs,=-80 V. However, the latter has a very rough surface. The change of η with film thickness and Vs is interpreted in terms of the structure change. Misfit dislocations and lattice expansion are induced along the MgO surface to relax the strain energy due to the lattice mismatch between Cu and MgO.
基金Supported by the National Natural Science Foundation of China under Grant No 11405114the Natural Science Foundation of Shanxi Province under Grant No 2015021065
文摘Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond （MCD） films. Its electrical field emission behavior can be turned on at Eo = 2.6 V/μm, attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/#m. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron mi- croscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.
基金Project supported by the National Key Research and Development Program of the Ministry of Science and Technology of China(Grants Nos.2017YFA0303002and 2016YFA0300204)the Fundamental Research Funds for the Central Universities,China
文摘In this study, we have explored the ways to fabricate and optimize high-quality ultrathin YBa2 Cu3 O7-δ(YBCO) films grown on single-crystal(001) SrTiO3 substrates. Nearly atomic-flat YBCO films are obtained by pulsed laser deposition.Our result shows that the termination of SrTiO3 has only a negligible effect on the properties of YBCO. In contrast, we found that capping a non-superconducting oxide layer can generally enhance the superconductivity of YBCO. PrBa2 Cu3 O7,La2 CuO4, LaMnO3, SrTiO3, and LaAlO3 have been examined as capping layers, and the minimum thickness of superconducting YBCO with capping is ~ 2 unit cells–3 unit cells. This result might be useful in constructing good-performance YBCO-based field effect devices.
文摘Copper sulfide thin films are deposited onto different substrates at room temperature using the thermal evaporation technique. X-ray diffraction spectra show that the film has an orthorhombicchalcocite （7-Cu2S） phase. The atomic force microscopy images indicate that the film exhibits nanoparticles with an average size of nearly 44 nm. Specrtophotometric measurements for the transmittance and reflectance are carried out at normal incidence in a spectral wavelength range of 450 nm-2500 nm. The refractive index, n, as well as the absorption index, k is calculated. Some dispersion parameters are determined. The analyses of el and e2 reveal several absorption peaks. The analysis of the spectral behavior of the absorption coefficient, c~, in the absorption region reveals direct and indirect allowed transitions. The dark electrical resistivity is studied as a function of film thickness and temperature. Tellier＇s model is adopted for determining the mean free path and bulk resistance.
文摘As one of the most widely used domestic fuels, the detection of possible leakages of Liquefied Petroleum (LP) gas from production plants, from cylinders during their storage, transport and usage is of utmost importance. This article discusses a study of the response of undoped and chlorine doped electrodeposited n-type Cuprous Oxide (Cu2O) films to of LP gas. Undoped n-type Cu2O films were fabricated in an electrolyte bath containing a solution of sodium acetate and cupric acetate whereas n-type chlorine doped Cu2O thin films were prepared by adding a 0.02 M cuprous chloride (CuCl2) into an electrolyte solution containing lactic acid, cupric sulfate and sodium hydroxide. The n-type conductivity of the deposited films was determined using spectral response measurements. The structural and morphological properties of the fabricated films were monitored using X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). Due to doping, the overall conductivity of the chlorine doped n-type Cu2O films increased by several orders of magnitude. The temperature dependent gas responses of both the undoped and chlorine doped n-type Cu2O thin films to the LP gas was monitored by measuring the electrical resistance (R), and using the contact probe method at a constant gas flow rate of 0.005 ml/s. Upon exposure to gases, both doped and undoped films showed a good response to the gas by increasing/decreasing the electrical resistance by ΔR. The undoped n-type Cu2O thin films showed a negative response (ΔR 2O thin films initially showed a positive response (ΔR > 0) to the LP gas which then reversed its sign to give a negative response which peaked at 52°C. The positive response shown by the chlorine doped Cu2O films vanished completely at 42°C.
基金Project(05JJ3005)supported by the Natural Science Foundation of Hunan Province,China
文摘Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology.Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied.It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably improve the adhesive property of Cu-W thin films. Indentation and scratching test show that,the critical load is doubled over than the sample only sputter-cleaned by ion beam.The enhancing mechanism of ion beam assisting bombardment implanting of Cu-W thin films was analyzed.With the help of mid-energy Ar+ion beam,W atoms can diffuse into the Fe-substrate surface layer;Fe atoms in the substrate surface layer and W atoms interlace with one another;and microcosmic mechanical meshing and diffusing combination on atom-scale among the Fe and W atoms through the film/substrate interface can be formed.The wettability and thermal expansion properties of the W atoms diffusion zone containing plentiful W atoms are close to those of pure W or W-based Cu-W film.
基金Project supported by the National Natural Science Foundation of China(Grant No.51272250)the National Basic Research Program of China(Grant No.2011CBA00105)+1 种基金the National High Technology Research and Development Program of China(Grant No.2014AA032702)the Natural Science Foundation of Beijing,China(Grant No.2152035)
文摘YBa2Cu3O7-x（YBCO） films with co-doping BaTiO3（BTO） and Y2O3 nanostructures were prepared by metal organic deposition using trifluoroacetates（TFA-MOD）. The properties of the BTO/Y2O3co-doped YBCO films with different excess yttrium have been systematically studied by x-ray diffraction（XRD）, Raman spectra, and scanning electron microscope（SEM）. The optimized content of yttrium excess in the BTO/Y2O3co-doped YBCO films is 10 mol.%, and the critical current density is as high as - 17 mA/cm^2（self-field, 65 K） by the magnetic signal. In addition, the Y2Cu2O5 was formed when the content of yttrium excess increases to 24 mol.%, which may result in the deterioration of the superconducting properties and the microstructure. The unique combination of the different types of nanostructures of BTO and Y2O3 in the doped YBCO films, compared with the pure YBCO films and BTO doped YBCO films, enhances the critical current density（JC） not only at the self-magnetic field, but also in the applied magnetic field.
文摘Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy （XPS） depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.
基金the National Naturul Science Foundation of China for thefinancial support (Grant No.19974005).
文摘Cu films with thickness of about 500nm were deposited on glass substrateswithout heating by DC magnetron sputtering in pure Ar gas of 1.0Pa. The sputtering powers weremaintained at 390V X 0.27A, 430V X 0.70A and 450V X l.04A, and the corresponding deposition rates ofCu film reached 35nm/min, l04nm/min and 167nm/min. X-ray diffraction, scanning electron microscopyand atomic force microscopy were used to observe the structural characteristics of the films. Theresistance of the films was measured using four-point probe technique. The amount of larger grainsincreases and the resistivity of the films decreases evidently with an increase in sputtering power.It is considered that the increase in deposition rate with sputtering power mainly weakens theinfluence of residual gas atoms on the growing film, and increases substrate and gas temperatures,resulting in the increase in grain size and the decrease in resistivity of the Cu film.
