In this work, we present a theoretical study of a vertical parallel junction silicon solar cell under monochromatic illumination. The internal quantum efficiency (IQE) and the photovoltaic conversion efficiency are ca...In this work, we present a theoretical study of a vertical parallel junction silicon solar cell under monochromatic illumination. The internal quantum efficiency (IQE) and the photovoltaic conversion efficiency are calculated, taking into account the base doping density and illumination wave-length. The main purpose of this work is to show how conversion efficiency depends on internal quantum efficiency and the dependence of the later on the base doping density.展开更多
Blue InGaN multiple-quantum-well (MQW) samples with different InxGa1-xN (x=0.01–0.04) underneath layers (ULs) were grown by metal organic vapor phase epitaxy (MOVPE). Temperature dependent photoluminescence showed th...Blue InGaN multiple-quantum-well (MQW) samples with different InxGa1-xN (x=0.01–0.04) underneath layers (ULs) were grown by metal organic vapor phase epitaxy (MOVPE). Temperature dependent photoluminescence showed that the InGaN UL can improve the internal quantum efficiency (IQE) of MQW effectively due to strain release. And a maximum IQE of 50% was obtained when the thickness and In content of the InGaN UL were 60 nm and 0.01, respectively. Furthermore, the larger In content or thickness of the InGaN UL makes the IQE lower. Arrhenius fit to the experiment data showed that the IQE fall was mainly caused by the quantity increase of the nonradiative recombination centers, which was believed related to the accumulated stress in InGaN ULs.展开更多
文摘In this work, we present a theoretical study of a vertical parallel junction silicon solar cell under monochromatic illumination. The internal quantum efficiency (IQE) and the photovoltaic conversion efficiency are calculated, taking into account the base doping density and illumination wave-length. The main purpose of this work is to show how conversion efficiency depends on internal quantum efficiency and the dependence of the later on the base doping density.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60536020, 60723002) Major Project of Beijing Mu-nicipal Science and Technology Commission (Grant No. D0404003040321)
文摘Blue InGaN multiple-quantum-well (MQW) samples with different InxGa1-xN (x=0.01–0.04) underneath layers (ULs) were grown by metal organic vapor phase epitaxy (MOVPE). Temperature dependent photoluminescence showed that the InGaN UL can improve the internal quantum efficiency (IQE) of MQW effectively due to strain release. And a maximum IQE of 50% was obtained when the thickness and In content of the InGaN UL were 60 nm and 0.01, respectively. Furthermore, the larger In content or thickness of the InGaN UL makes the IQE lower. Arrhenius fit to the experiment data showed that the IQE fall was mainly caused by the quantity increase of the nonradiative recombination centers, which was believed related to the accumulated stress in InGaN ULs.
