ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1:2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-r...ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1:2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al distortion, and the biaxial stresses are 1.03× 10^8. 3.26× 10^8 and Sb are of wurtzite hexagonal ZnO with a very small 5.23 × 10^8, and 6.97× 10^8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5 Ω·cm.展开更多
This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on a-plane sapphire substrates by using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagn...This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on a-plane sapphire substrates by using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagnetism at room temperature, while they become more conductive and ferromagnetic after annealing in the reducing atmosphere either in the presence or absence of Zn vapour. The x-ray absorption studies indicate that all Co ions in these samples actually substituted into the ZnO lattice without formatting any detectable secondary phase. Compared with weak ferromagnetism (0.16 μB/Co2+) in the Zno.95 Co0.05 O single crystalline film with reducing annealing in the absence of Zn vapour, the films annealed in the reducing atmosphere with Zn vapour are found to have much stronger ferromagnetism (0.65 μB/Co2+) at room temperature. This experimental studies clearly indicate that Zn interstitials are more effective than oxygen vacancies to activate the high-temperature ferromagnetism in Co-doped ZnO films, and the corresponding ferromagnetic mechanism is discussed.展开更多
This paper reports that the Zn0.95Co0.05O polycrystalline powder and thin film were prepared by sol-gel technique under the similar preparation conditions. The former does not show typical ferromagnetic behaviour, whi...This paper reports that the Zn0.95Co0.05O polycrystalline powder and thin film were prepared by sol-gel technique under the similar preparation conditions. The former does not show typical ferromagnetic behaviour, while the latter exhibits obvious ferromagnetic properties at 5 K and room temperature. The UV-vis spectra and x-ray absorption spectra show that Co2+ ions are homogeneously incorporated into ZnO lattice without forming secondary phases.The distinct difference between film and powder sample is the c-axis (002) preferential orientation indicated by the x-ray diffraction pattern and field emission scanning electron microscopy measurement, which may be the reason why Zn0.95Co0.05O film shows ferromagnetic behaviour.展开更多
The first-principles density functional calculation is used to investigate the electronic structures and magnetic properties of Mn-doped and N-co-doped ZnO nanofilms.The band structure calculation shows that the band ...The first-principles density functional calculation is used to investigate the electronic structures and magnetic properties of Mn-doped and N-co-doped ZnO nanofilms.The band structure calculation shows that the band gaps of ZnO films with 2,4,and 6 layers are larger than the band gap of the bulk with wurtzite structure and decrease with the increase of film thickness.However,the four-layer ZnO nanofilms exhibit ferromagnetic phases for Mn concentrations less than 24% and 12% for Mn-doping performed in the whole layers and two layers of the film respectively,while they exhibit spin glass phases for higher Mn concentrations.It is also found,on the one hand,that the spin glass phase turns into the ferromagnetic one,with the substitution of nitrogen atoms for oxygen atoms,for nitrogen concentrations higher than 16% and 5% for Mn-doping performed in the whole layers and two layers of the film respectively.On the other hand,the spin-glass state is more stable for ZnO bulk containing 5% of Mn impurities,while the ferromagnetic phase is stable by introducing the p-type carriers into the bulk system.Moreover,it is shown that using the effective field theory for ferromagnetic system,the Curie temperature is close to the room temperature for the undamped Ruderman-Kittel-Kasuya-Yoshida(RKKY) interaction.展开更多
This paper reports that ion implantation to a dose of 1 ×10^17 ions/cm^2 was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantatio...This paper reports that ion implantation to a dose of 1 ×10^17 ions/cm^2 was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600 - 900 ℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction (XRD), photoluminescence (PL). It was found that the intensities of (002) peak and near band edge (NBE) exitonic ultraviolet emission increased with increasing annealing temperature from 600- 900 ℃. The defect related deep level emission (DLE) firstly increased with increasing annealing temperature from 600 - 750 ℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at ~850℃ and ~750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 - 900 ℃.展开更多
ZnO thin films were deposited on Si(111) substrates through a radio frequency (rf) magnetron sputtering system. Then the samples were annealed at different temperatures in air ambience and ammonia ambience respect...ZnO thin films were deposited on Si(111) substrates through a radio frequency (rf) magnetron sputtering system. Then the samples were annealed at different temperatures in air ambience and ammonia ambience respectively. The structure and composition of the ZnO films were studied by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The morphology of the samples was studied by scanning electron microscopy (SEM). Measured results show that ZnO films with hexagonal wurtzite structure were grown on Si(111) substrates when annealed in the two ambiences. The volatilization process of ZnO in the ammonia ambience at high temperature was discussed and the mechanism of the reaction was analyzed.展开更多
To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets(ZnO:Al,ZnO:(Al,Dy),ZnO:(Al,Gd),ZnO:(Al,Zr),ZnO:(Al,Nb),and ZnO:(Al,W)) were fabr...To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets(ZnO:Al,ZnO:(Al,Dy),ZnO:(Al,Gd),ZnO:(Al,Zr),ZnO:(Al,Nb),and ZnO:(Al,W)) were fabricated and used to deposit thin films onto glass substrates by radio frequency(RF) magnetron sputtering.X-ray diffraction(XRD) analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the(002) plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.展开更多
This paper reports a piezoelectric nanogenerator(NG) with a thickness of approximately 80 μm for miniaturized self-powered acceleration sensors. To deposit the piezoelectric zinc oxide(ZnO) thin film, a magnetron spu...This paper reports a piezoelectric nanogenerator(NG) with a thickness of approximately 80 μm for miniaturized self-powered acceleration sensors. To deposit the piezoelectric zinc oxide(ZnO) thin film, a magnetron sputtering machine was used. Polymethyl methacrylate(PMMA) and aluminum-doped zinc oxide(AZO) were used as the insulating layer and the top electrode of the NG, respectively. The experimental results show that the ZnO thin films annealed at 150℃ exhibited the highest crystallinity among the prepared films and an optical band gap of 3.24 eV. The NG fabricated with an AZO/PMMA/ZnO/stainless steel configuration exhibited a higher output voltage than the device with an AZO/ZnO/PMMA/stainless steel configuration. In addition, the annealing temperature affected the open-circuit voltage of the NGs;the output voltage reached 3.81 V when the annealing temperature was 150℃. The open-circuit voltage of the prepared self-powered accelerometer increased linearly with acceleration. In addition, the small NG-based accelerometer, which exhibited excellent fatigue resistance, can be used for acceleration measurements of small and lightweight devices.展开更多
This paper reports the induced growth of high quality ZnO thin film by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous ZnO as see...This paper reports the induced growth of high quality ZnO thin film by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous ZnO as seeds (buffer layer), ZnO thin films have been grown in diethyene glycol solution of zinc acetate at 80 ℃. X-ray Diffraction curve indicates that the films were preferentially oriented [001] out-of-plane direction of the ZnO. Atomic force microscopy and scanning electron microscopy were used to evaluate the surface morphology of the ZnO thin film. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. The results indicate that high quality ZnO thin film was obtained.展开更多
In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration ...In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.展开更多
The effect of different annealing temperatures on the structure, morphology,and optical properties of ZnO thin films prepared by the chelating sol-gel method was investigated.Zinc-oxide thin films were coated on quart...The effect of different annealing temperatures on the structure, morphology,and optical properties of ZnO thin films prepared by the chelating sol-gel method was investigated.Zinc-oxide thin films were coated on quartz glass substrates by dip coating. Zinc nitrate, absoluteethanol, and citric acid were used as precursor, solvent, and chelating agent, respectively. Theresults show that ZnO films derived from zinc-citrate have lower crystallization temperature (below400℃), and that the crystal structure is wurtzite. The films, treated over 500℃, consist ofnano-particles and show to be porous at 600℃. The particle size of the film increases with theincrease of the annealing temperature. The largest particle size is 60 nm at 600℃. The opticaltransmittances related to the annealing temperatures become 90% higher in the visible range. Thefilm shows a starting absorption at 380 nm, and the optical band-gap of the thin film (fired at500℃) is 3.25 eV and close to the intrinsic band-gap of ZnO (3.2 eV).展开更多
Propagation characteristics of surface acoustic waves(SAWs) in ZnO films/glass substrates are theoretically investigated by the three-dimensional(3D) finite element method. At first, for(11ˉ20) ZnO films/glass ...Propagation characteristics of surface acoustic waves(SAWs) in ZnO films/glass substrates are theoretically investigated by the three-dimensional(3D) finite element method. At first, for(11ˉ20) ZnO films/glass substrates, the simulation results confirm that the Rayleigh waves along the [0001] direction and Love waves along the [1ˉ100] direction are successfully excited in the multilayered structures. Next, the crystal orientations of the ZnO films are rotated, and the influences of ZnO films with different crystal orientations on SAW characterizations, including the phase velocity, electromechanical coupling coefficient, and temperature coefficient of frequency, are investigated. The results show that at appropriate h/λ, Rayleigh wave has a maximum k^2 of 2.4% in(90°, 56.5°, 0°) ZnO film/glass substrate structure; Love wave has a maximum k^2 of 3.81% in(56°, 90°, 0°) ZnO film/glass substrate structure. Meantime, for Rayleigh wave and Love wave devices, zero temperature coefficient of frequency(TCF) can be achieved at appropriate ratio of film thickness to SAW wavelength. These results show that SAW devices with higher k^2 or lower TCF can be fabricated by flexibly selecting the crystal orientations of ZnO films on glass substrates.展开更多
ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type (001) Si and glass substrates at room temperature. The mor- ph...ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type (001) Si and glass substrates at room temperature. The mor- phology, structure, optical, and electrical properties of the multilayer films were characterized by field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), UV/Vis spectrophotometer, and Hall effect mea- surement system. The influence of Cu layer thickness and the oxygen pressure in sputtering atmosphere on the film properties were studied. ZnO/Cu/ZnO transparent conduc- tive film fabricated in pure Ar atmosphere with 10 nm Cu layer thickness has the best performance: resistivity of 2.3 × 10^-4 Ω.cm, carrier concentration of 6.44 × 10^16 cm-2, mobility of 4.51 cm2.(V.s)-1, and acceptable aver- age transmittance of 80 % in the visible range. The trans- mittance and conductivity of the films fabricated with oxygen are lower than those of the films fabricated without oxygen, which indicates that oxygen atmosphere does not improve the optical and electrical properties of ZnO/Cu/ ZnO films.展开更多
Two-step growth regimes were applied to realize a homoepitaxial growth of ZnO films on freestanding diamond substrates by radio-frequency (RF) reactive magnetron sputtering method. ZnO buffer layers were deposited o...Two-step growth regimes were applied to realize a homoepitaxial growth of ZnO films on freestanding diamond substrates by radio-frequency (RF) reactive magnetron sputtering method. ZnO buffer layers were deposited on freestanding diamond substrates at a low sputtering power of 50 W, and then ZnO main layers were prepared on this buffer layer at a high sputtering power of 150 W. For comparison, a sample was also deposited directly on freestanding diamond substrate at a power of 150 W. The effects of ZnO buffer layers on the structural, optical, electrical and morphological properties of the ZnO main layer were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, semiconductor characterization system and atomic force microscopy (AFM) respectively. The experimental results suggested that homo-buffer layer was helpful to improve the crystalline quality of ZnO/diamond heteroepitaxial films.展开更多
ZnO thin films were deposited on n-Si (111) at various substrate temperatures by pulsed laser deposition (PLD). X-ray diffraction (XRD), photoluminescence (PL), Fourier transform infrared spectrophotometer (F...ZnO thin films were deposited on n-Si (111) at various substrate temperatures by pulsed laser deposition (PLD). X-ray diffraction (XRD), photoluminescence (PL), Fourier transform infrared spectrophotometer (FTIR), and scanning electron microscopy (SEM) were used to analyze the structure, morphology, and optical property of the ZnO thin films. An optimal crystallized ZnO thin film was obtained at the substrate temperature of 600℃. A blue shift was found in PL spectra due to size confinement effect as the grain sizes decreased. The surfaces of the ZnO thin films were more planar and compact as the substrate temperature increased.展开更多
Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Tr...Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400℃ to 800℃. The band gap of the as-deposited ZnO:In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400℃ to 800℃.展开更多
Silver nanocluster embedded ZnO composite thin film was observed to have an angle-sensitive and fast photovoltaic effect in the angle range from -90° to 90° , its peak value and the polarity varied regularly...Silver nanocluster embedded ZnO composite thin film was observed to have an angle-sensitive and fast photovoltaic effect in the angle range from -90° to 90° , its peak value and the polarity varied regularly with the angle of incidence of the 1.064-μm pulsed Nd:YAG laser radiation onto the ZnO surface. Meanwhile, for each photovoltaic signal, its rising time reached -2 ns with an open-circuit photovoltage of -2 ns full width at half-maximum. This angle-sensitive fast photovoltaic effect is expected to put this composite film a candidate for angle-sensitive and fast photodetector.展开更多
Na-doped ZnO thin films were deposited on the glass substrates using sol-gel method. The effect of Na concentrations on the structural and optical properties of ZnO films was studied. As Na concentration increases fro...Na-doped ZnO thin films were deposited on the glass substrates using sol-gel method. The effect of Na concentrations on the structural and optical properties of ZnO films was studied. As Na concentration increases from 0.0 at% to 16.0 at%, preferential c-axis orientation becomes more and more obvious, and the intensity of the diffraction peaks from (103) increases. The optical band gap Eg value increases from 3.261 to 3.286 eV first and then decreases as Na concentration increases from 0.0 to 2.0 at% and then beyond 2.0 at%. The intensity of all the emissions increases with increasing Na concentration and the origins of the violet emission (wavelength in the 400-407 nm) and the blue emission (wavelength at 473 nm) were discussed in detail.展开更多
基金Project supported by the Innovation Foundation of Beijing University of Aeronautics and Astronautics for PhD Graduates, China (Grant No. 292122)the Equipment Research Foundation of China (Grant No. 373974)
文摘ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1:2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al distortion, and the biaxial stresses are 1.03× 10^8. 3.26× 10^8 and Sb are of wurtzite hexagonal ZnO with a very small 5.23 × 10^8, and 6.97× 10^8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5 Ω·cm.
基金Project partially supported by National Science Foundation of China (Grant No. 10804017)National Science Foundation of Jiangsu Province of China (Grant No. BK2007118)+3 种基金Research Fund for the Doctoral Program of Higher Education of China(Grant No. 20070286037)Cyanine-Project Foundation of Jiangsu Province of China (Grant No. 1107020060)Foundation for Climax Talents Plan in Six-Big Fields of Jiangsu Province of China (Grant No. 1107020070)New Century Excellent Talents in University (NCET-05-0452)
文摘This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on a-plane sapphire substrates by using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagnetism at room temperature, while they become more conductive and ferromagnetic after annealing in the reducing atmosphere either in the presence or absence of Zn vapour. The x-ray absorption studies indicate that all Co ions in these samples actually substituted into the ZnO lattice without formatting any detectable secondary phase. Compared with weak ferromagnetism (0.16 μB/Co2+) in the Zno.95 Co0.05 O single crystalline film with reducing annealing in the absence of Zn vapour, the films annealed in the reducing atmosphere with Zn vapour are found to have much stronger ferromagnetism (0.65 μB/Co2+) at room temperature. This experimental studies clearly indicate that Zn interstitials are more effective than oxygen vacancies to activate the high-temperature ferromagnetism in Co-doped ZnO films, and the corresponding ferromagnetic mechanism is discussed.
文摘This paper reports that the Zn0.95Co0.05O polycrystalline powder and thin film were prepared by sol-gel technique under the similar preparation conditions. The former does not show typical ferromagnetic behaviour, while the latter exhibits obvious ferromagnetic properties at 5 K and room temperature. The UV-vis spectra and x-ray absorption spectra show that Co2+ ions are homogeneously incorporated into ZnO lattice without forming secondary phases.The distinct difference between film and powder sample is the c-axis (002) preferential orientation indicated by the x-ray diffraction pattern and field emission scanning electron microscopy measurement, which may be the reason why Zn0.95Co0.05O film shows ferromagnetic behaviour.
文摘The first-principles density functional calculation is used to investigate the electronic structures and magnetic properties of Mn-doped and N-co-doped ZnO nanofilms.The band structure calculation shows that the band gaps of ZnO films with 2,4,and 6 layers are larger than the band gap of the bulk with wurtzite structure and decrease with the increase of film thickness.However,the four-layer ZnO nanofilms exhibit ferromagnetic phases for Mn concentrations less than 24% and 12% for Mn-doping performed in the whole layers and two layers of the film respectively,while they exhibit spin glass phases for higher Mn concentrations.It is also found,on the one hand,that the spin glass phase turns into the ferromagnetic one,with the substitution of nitrogen atoms for oxygen atoms,for nitrogen concentrations higher than 16% and 5% for Mn-doping performed in the whole layers and two layers of the film respectively.On the other hand,the spin-glass state is more stable for ZnO bulk containing 5% of Mn impurities,while the ferromagnetic phase is stable by introducing the p-type carriers into the bulk system.Moreover,it is shown that using the effective field theory for ferromagnetic system,the Curie temperature is close to the room temperature for the undamped Ruderman-Kittel-Kasuya-Yoshida(RKKY) interaction.
文摘This paper reports that ion implantation to a dose of 1 ×10^17 ions/cm^2 was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600 - 900 ℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction (XRD), photoluminescence (PL). It was found that the intensities of (002) peak and near band edge (NBE) exitonic ultraviolet emission increased with increasing annealing temperature from 600- 900 ℃. The defect related deep level emission (DLE) firstly increased with increasing annealing temperature from 600 - 750 ℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at ~850℃ and ~750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 - 900 ℃.
基金This work was financially supported by the Key Research Program of National Natural Science Foundation of China (Nos.90301002 and 90201025).
文摘ZnO thin films were deposited on Si(111) substrates through a radio frequency (rf) magnetron sputtering system. Then the samples were annealed at different temperatures in air ambience and ammonia ambience respectively. The structure and composition of the ZnO films were studied by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The morphology of the samples was studied by scanning electron microscopy (SEM). Measured results show that ZnO films with hexagonal wurtzite structure were grown on Si(111) substrates when annealed in the two ambiences. The volatilization process of ZnO in the ammonia ambience at high temperature was discussed and the mechanism of the reaction was analyzed.
文摘To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets(ZnO:Al,ZnO:(Al,Dy),ZnO:(Al,Gd),ZnO:(Al,Zr),ZnO:(Al,Nb),and ZnO:(Al,W)) were fabricated and used to deposit thin films onto glass substrates by radio frequency(RF) magnetron sputtering.X-ray diffraction(XRD) analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the(002) plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.
基金supported by the National Natural Science Foundation of China (No. 61671017)Key Project of Excellent Youth Talent Support Program in Colleges and Universities of Anhui Province (No. gxyqZD2018004)+1 种基金Provincial Natural Science Foundation of Anhui Higher Education Institution of China (No. KJ2016A787)Anhui Provincial Natural Science Foundation of China (No. 1508085ME72)
文摘This paper reports a piezoelectric nanogenerator(NG) with a thickness of approximately 80 μm for miniaturized self-powered acceleration sensors. To deposit the piezoelectric zinc oxide(ZnO) thin film, a magnetron sputtering machine was used. Polymethyl methacrylate(PMMA) and aluminum-doped zinc oxide(AZO) were used as the insulating layer and the top electrode of the NG, respectively. The experimental results show that the ZnO thin films annealed at 150℃ exhibited the highest crystallinity among the prepared films and an optical band gap of 3.24 eV. The NG fabricated with an AZO/PMMA/ZnO/stainless steel configuration exhibited a higher output voltage than the device with an AZO/ZnO/PMMA/stainless steel configuration. In addition, the annealing temperature affected the open-circuit voltage of the NGs;the output voltage reached 3.81 V when the annealing temperature was 150℃. The open-circuit voltage of the prepared self-powered accelerometer increased linearly with acceleration. In addition, the small NG-based accelerometer, which exhibited excellent fatigue resistance, can be used for acceleration measurements of small and lightweight devices.
基金Project supported by the "863" High Technology Research Program in China (Grant No 2001AA311120), the National Natural Science Foundation of China (Grant No 60278031), the Innovation Project of Chinese Academy of Sciences, the Jilin Province Science and Technology Development Program Project of China (Grant No 20040564) and the Young Innovation Function of the Changchun Institute of 0ptics, Fine Mechanics and Physics, Chinese Academy of Sciences (Grant No Q03M23Z).
文摘This paper reports the induced growth of high quality ZnO thin film by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous ZnO as seeds (buffer layer), ZnO thin films have been grown in diethyene glycol solution of zinc acetate at 80 ℃. X-ray Diffraction curve indicates that the films were preferentially oriented [001] out-of-plane direction of the ZnO. Atomic force microscopy and scanning electron microscopy were used to evaluate the surface morphology of the ZnO thin film. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. The results indicate that high quality ZnO thin film was obtained.
基金supported by National Natural Science Foundation of China(Nos.11875090,12075032,11775028,11875088,11974048)Beijing Municipal National Science Foundation(Nos.1192008,KZ202010015022)BIGC(Nos.Ea201901,Ee202001)。
文摘In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.
基金This work was financially supported by the Natural Science Foundation of Tianjin (No. 33802311)
文摘The effect of different annealing temperatures on the structure, morphology,and optical properties of ZnO thin films prepared by the chelating sol-gel method was investigated.Zinc-oxide thin films were coated on quartz glass substrates by dip coating. Zinc nitrate, absoluteethanol, and citric acid were used as precursor, solvent, and chelating agent, respectively. Theresults show that ZnO films derived from zinc-citrate have lower crystallization temperature (below400℃), and that the crystal structure is wurtzite. The films, treated over 500℃, consist ofnano-particles and show to be porous at 600℃. The particle size of the film increases with theincrease of the annealing temperature. The largest particle size is 60 nm at 600℃. The opticaltransmittances related to the annealing temperatures become 90% higher in the visible range. Thefilm shows a starting absorption at 380 nm, and the optical band-gap of the thin film (fired at500℃) is 3.25 eV and close to the intrinsic band-gap of ZnO (3.2 eV).
基金supported by the National Natural Science Foundation of China(Grant No.11304160)the Natural Science Foundation of Jiangsu Provincial Higher Education Institutions,China(Grant No.13KJB140008)the Foundation of Nanjing University of Posts and Telecommunications,China(Grant No.NY213018)
文摘Propagation characteristics of surface acoustic waves(SAWs) in ZnO films/glass substrates are theoretically investigated by the three-dimensional(3D) finite element method. At first, for(11ˉ20) ZnO films/glass substrates, the simulation results confirm that the Rayleigh waves along the [0001] direction and Love waves along the [1ˉ100] direction are successfully excited in the multilayered structures. Next, the crystal orientations of the ZnO films are rotated, and the influences of ZnO films with different crystal orientations on SAW characterizations, including the phase velocity, electromechanical coupling coefficient, and temperature coefficient of frequency, are investigated. The results show that at appropriate h/λ, Rayleigh wave has a maximum k^2 of 2.4% in(90°, 56.5°, 0°) ZnO film/glass substrate structure; Love wave has a maximum k^2 of 3.81% in(56°, 90°, 0°) ZnO film/glass substrate structure. Meantime, for Rayleigh wave and Love wave devices, zero temperature coefficient of frequency(TCF) can be achieved at appropriate ratio of film thickness to SAW wavelength. These results show that SAW devices with higher k^2 or lower TCF can be fabricated by flexibly selecting the crystal orientations of ZnO films on glass substrates.
基金financially supported by the National Nature Science Foundation of China (No. 21071098)the Project of International Cooperation of the Ministry of Science and Technology of China (No. 2011DFA50530)the Nanotechnology Program of Shanghai Science & Technology Committee (No. 12nm0504800)
文摘ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type (001) Si and glass substrates at room temperature. The mor- phology, structure, optical, and electrical properties of the multilayer films were characterized by field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), UV/Vis spectrophotometer, and Hall effect mea- surement system. The influence of Cu layer thickness and the oxygen pressure in sputtering atmosphere on the film properties were studied. ZnO/Cu/ZnO transparent conduc- tive film fabricated in pure Ar atmosphere with 10 nm Cu layer thickness has the best performance: resistivity of 2.3 × 10^-4 Ω.cm, carrier concentration of 6.44 × 10^16 cm-2, mobility of 4.51 cm2.(V.s)-1, and acceptable aver- age transmittance of 80 % in the visible range. The trans- mittance and conductivity of the films fabricated with oxygen are lower than those of the films fabricated without oxygen, which indicates that oxygen atmosphere does not improve the optical and electrical properties of ZnO/Cu/ ZnO films.
基金supported by the National Natural Science Foundation of China(No.60877017)Program for Changjiang Scholars and Innovative Research Team in University(No.IRT0739)+1 种基金Shanghai Leading Academic Disciplines(S30107)Innovation Program of Shanghai Municipal Education Commission(No.08YZ04)
文摘Two-step growth regimes were applied to realize a homoepitaxial growth of ZnO films on freestanding diamond substrates by radio-frequency (RF) reactive magnetron sputtering method. ZnO buffer layers were deposited on freestanding diamond substrates at a low sputtering power of 50 W, and then ZnO main layers were prepared on this buffer layer at a high sputtering power of 150 W. For comparison, a sample was also deposited directly on freestanding diamond substrate at a power of 150 W. The effects of ZnO buffer layers on the structural, optical, electrical and morphological properties of the ZnO main layer were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, semiconductor characterization system and atomic force microscopy (AFM) respectively. The experimental results suggested that homo-buffer layer was helpful to improve the crystalline quality of ZnO/diamond heteroepitaxial films.
基金This work was financially supported by the Key Research Program of National Natural Science Foundation of China (No. 90301002 and No. 90201025)
文摘ZnO thin films were deposited on n-Si (111) at various substrate temperatures by pulsed laser deposition (PLD). X-ray diffraction (XRD), photoluminescence (PL), Fourier transform infrared spectrophotometer (FTIR), and scanning electron microscopy (SEM) were used to analyze the structure, morphology, and optical property of the ZnO thin films. An optimal crystallized ZnO thin film was obtained at the substrate temperature of 600℃. A blue shift was found in PL spectra due to size confinement effect as the grain sizes decreased. The surfaces of the ZnO thin films were more planar and compact as the substrate temperature increased.
基金supported by the National Natural Science Foundation of China (Grant Nos. 50942021 and 11075314)the Fundamental Research Fund for the Central Universities (Grant No. CDJXS10102207)
文摘Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400℃ to 800℃. The band gap of the as-deposited ZnO:In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400℃ to 800℃.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60877038,50672132,60778034 and 10804077)Program for New Century Excellent Talents in University,Research Fund for the Doctoral Program of the Higher Education of China(Grant No.200804250006)+1 种基金Key Project of the Chinese Ministry of Education(Grant No.107020)the Natural Science Foundation of Beijing(Grant No.4082026)
文摘Silver nanocluster embedded ZnO composite thin film was observed to have an angle-sensitive and fast photovoltaic effect in the angle range from -90° to 90° , its peak value and the polarity varied regularly with the angle of incidence of the 1.064-μm pulsed Nd:YAG laser radiation onto the ZnO surface. Meanwhile, for each photovoltaic signal, its rising time reached -2 ns with an open-circuit photovoltage of -2 ns full width at half-maximum. This angle-sensitive fast photovoltaic effect is expected to put this composite film a candidate for angle-sensitive and fast photodetector.
基金Funded by the National Natural Science Foundation of China (No.50872001)Research Fund for the Doctoral Program of Higher Education ofChina (No. 20060357003)Talent Foundation of Anhui Province (No.2004Z029)
文摘Na-doped ZnO thin films were deposited on the glass substrates using sol-gel method. The effect of Na concentrations on the structural and optical properties of ZnO films was studied. As Na concentration increases from 0.0 at% to 16.0 at%, preferential c-axis orientation becomes more and more obvious, and the intensity of the diffraction peaks from (103) increases. The optical band gap Eg value increases from 3.261 to 3.286 eV first and then decreases as Na concentration increases from 0.0 to 2.0 at% and then beyond 2.0 at%. The intensity of all the emissions increases with increasing Na concentration and the origins of the violet emission (wavelength in the 400-407 nm) and the blue emission (wavelength at 473 nm) were discussed in detail.