在GaSb衬底上用LPE法生长了晶格匹配的AlGaAsSb外延层。用室温光致发光和X射线双晶衍射分别测量了材料的禁带宽度和晶格常数,并与用内插法计算的结果进行了比较。用C-V和van der Pauw法测量了样品的电学参数。用激光喇曼散射和低温光致...在GaSb衬底上用LPE法生长了晶格匹配的AlGaAsSb外延层。用室温光致发光和X射线双晶衍射分别测量了材料的禁带宽度和晶格常数,并与用内插法计算的结果进行了比较。用C-V和van der Pauw法测量了样品的电学参数。用激光喇曼散射和低温光致发光研究了材料的光学性质,观察到了类GaSb的LO模和类AlSb的LO模以及LO声子与等离子激元的耦合模L_-;对x=0.2,y=0.025的样品,由低温到室温的变温光致发光测量确定的禁带宽度的温度系数为-3.2×10^(-4)eV/K。此外对于晶格失配,P型的原因以及PL谱峰的展宽等问题进行了讨论。展开更多
The epitaxial techniques are the most important processes in the production of semiconductor materials and optoelectronic devices. Liquid phase epitaxy (LPE) and metal organic vapor phase epitaxy (MOVPE) particularly...The epitaxial techniques are the most important processes in the production of semiconductor materials and optoelectronic devices. Liquid phase epitaxy (LPE) and metal organic vapor phase epitaxy (MOVPE) particularly have many applications.The process characteristics and crystalline properties of both LPE and MOVPE techniques were introduced briefly, the compositional space suitable for LPE and MOVPE growth was discussed from the view point of thermodynamic equilibrium. The analysis and comparison show that on the one hand LPE and MOVPE have some advantages and characteristics in common; on the other hand, they may overcome each other′s weaknesses and deficiencies by offering their own special features.展开更多
Growth of GaInAsSb epilayer by liquid phase epitaxy (LPE) was reported. The LPE system with a hor-izontal sliding graphite boat was employed. The Te-doped (100) GaSb wafer was chosen as substrate. Thephysical properti...Growth of GaInAsSb epilayer by liquid phase epitaxy (LPE) was reported. The LPE system with a hor-izontal sliding graphite boat was employed. The Te-doped (100) GaSb wafer was chosen as substrate. Thephysical properties of the GalnAsSb / GaSb heterostructure were investigated by double crystal X-ray rock-ing diffraction and photoluminescence. The p-GaInAsSb/ n-GaSb photodiode was made by using theseheterostructure materials .The detectivity of the photodiode D* is 4.65 ×10￣9 cm . Hz￣(1 /2) W￣(-1).展开更多
文摘在GaSb衬底上用LPE法生长了晶格匹配的AlGaAsSb外延层。用室温光致发光和X射线双晶衍射分别测量了材料的禁带宽度和晶格常数,并与用内插法计算的结果进行了比较。用C-V和van der Pauw法测量了样品的电学参数。用激光喇曼散射和低温光致发光研究了材料的光学性质,观察到了类GaSb的LO模和类AlSb的LO模以及LO声子与等离子激元的耦合模L_-;对x=0.2,y=0.025的样品,由低温到室温的变温光致发光测量确定的禁带宽度的温度系数为-3.2×10^(-4)eV/K。此外对于晶格失配,P型的原因以及PL谱峰的展宽等问题进行了讨论。
文摘The epitaxial techniques are the most important processes in the production of semiconductor materials and optoelectronic devices. Liquid phase epitaxy (LPE) and metal organic vapor phase epitaxy (MOVPE) particularly have many applications.The process characteristics and crystalline properties of both LPE and MOVPE techniques were introduced briefly, the compositional space suitable for LPE and MOVPE growth was discussed from the view point of thermodynamic equilibrium. The analysis and comparison show that on the one hand LPE and MOVPE have some advantages and characteristics in common; on the other hand, they may overcome each other′s weaknesses and deficiencies by offering their own special features.
文摘Growth of GaInAsSb epilayer by liquid phase epitaxy (LPE) was reported. The LPE system with a hor-izontal sliding graphite boat was employed. The Te-doped (100) GaSb wafer was chosen as substrate. Thephysical properties of the GalnAsSb / GaSb heterostructure were investigated by double crystal X-ray rock-ing diffraction and photoluminescence. The p-GaInAsSb/ n-GaSb photodiode was made by using theseheterostructure materials .The detectivity of the photodiode D* is 4.65 ×10￣9 cm . Hz￣(1 /2) W￣(-1).
