Dipolar relaxation and dielectric/piezoelectric resonance in a (001)-cut Pb(Zn1/3Nb2/3)0.9Ti0.1O3 (PZNT10%) single crystal before and after electric (E)-field poling were presented. Dielectric permittivities were meas...Dipolar relaxation and dielectric/piezoelectric resonance in a (001)-cut Pb(Zn1/3Nb2/3)0.9Ti0.1O3 (PZNT10%) single crystal before and after electric (E)-field poling were presented. Dielectric permittivities were measured as functions of temperature, frequency and poling E-field strength. Frequency-dependent dielectric spectroscopy in the poled sample exhibits multiple piezoelectric resonances between 0.1 and 1 MHz, which can be described by the forced-damped-oscillator model. The resonant spectra show significant changes while phase transitions are taking place. The unpoled crystal shows almost no optical birefringence, indicating that the average structure symmetry is isotropic. Birefringence of the crystal is significantly enhanced by a prior E-field poling.展开更多
以固态氧化物为原料,采用固态合成工艺制备Pb(Zn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-Pb(ZrTi)O3(PZN-PNN-PZT)压电陶瓷,并研究了锆钛比(r(Zr)/r(Ti))、Ba2+的A位取代及Ba2+、La3+的A位复合取代对压电陶瓷电性能的影响。结果表明,PZN-PNN-PZT...以固态氧化物为原料,采用固态合成工艺制备Pb(Zn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-Pb(ZrTi)O3(PZN-PNN-PZT)压电陶瓷,并研究了锆钛比(r(Zr)/r(Ti))、Ba2+的A位取代及Ba2+、La3+的A位复合取代对压电陶瓷电性能的影响。结果表明,PZN-PNN-PZT压电陶瓷在r(Zr)/r(Ti)=1.03下,进行Ba2+,La3+的A位复合取代后,即式子在Pb0.92Ba0.04La0.04(Ni1/3Nb2/3)y(Zn1/3Nb2/3)z Zrm Tin O3时压电性能最佳,其介电常数εT33/ε0=5 657,压电常数d33=709pC/N,机电耦合系数kp=0.69,品质因数Qm=45,居里温度TC=180.9℃。展开更多
文摘Dipolar relaxation and dielectric/piezoelectric resonance in a (001)-cut Pb(Zn1/3Nb2/3)0.9Ti0.1O3 (PZNT10%) single crystal before and after electric (E)-field poling were presented. Dielectric permittivities were measured as functions of temperature, frequency and poling E-field strength. Frequency-dependent dielectric spectroscopy in the poled sample exhibits multiple piezoelectric resonances between 0.1 and 1 MHz, which can be described by the forced-damped-oscillator model. The resonant spectra show significant changes while phase transitions are taking place. The unpoled crystal shows almost no optical birefringence, indicating that the average structure symmetry is isotropic. Birefringence of the crystal is significantly enhanced by a prior E-field poling.
文摘以固态氧化物为原料,采用固态合成工艺制备Pb(Zn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-Pb(ZrTi)O3(PZN-PNN-PZT)压电陶瓷,并研究了锆钛比(r(Zr)/r(Ti))、Ba2+的A位取代及Ba2+、La3+的A位复合取代对压电陶瓷电性能的影响。结果表明,PZN-PNN-PZT压电陶瓷在r(Zr)/r(Ti)=1.03下,进行Ba2+,La3+的A位复合取代后,即式子在Pb0.92Ba0.04La0.04(Ni1/3Nb2/3)y(Zn1/3Nb2/3)z Zrm Tin O3时压电性能最佳,其介电常数εT33/ε0=5 657,压电常数d33=709pC/N,机电耦合系数kp=0.69,品质因数Qm=45,居里温度TC=180.9℃。
