NASICON型快离子导体Li_(1+x)Al_(x)Ti_(2-x)(PO_(4))_(3)(LATP)具有较高的离子电导率、较宽的电化学窗口及良好的水和空气稳定性,但其界面接触性能差。石榴石型Li_(7)La_(3)Zr_(2)O_(12)(LLZO)锂离子电导率高、电化学窗口较宽且热稳定...NASICON型快离子导体Li_(1+x)Al_(x)Ti_(2-x)(PO_(4))_(3)(LATP)具有较高的离子电导率、较宽的电化学窗口及良好的水和空气稳定性,但其界面接触性能差。石榴石型Li_(7)La_(3)Zr_(2)O_(12)(LLZO)锂离子电导率高、电化学窗口较宽且热稳定性好,但其立方相结构不稳定,影响其实际应用。采用溶液浇筑法,制备纯PVDF-LiTFSI电解质膜和以PVDF为基、3种不同质量比的Li_(6.4)La_(3)Zr_(1.4)Ta_(0.6)O_(12)(LLZTO)和Li_(1+x)Al_(x)Ti_(2-x)(PO_(4))_(3)的固态电解质膜,并探讨纯PVDF-LiTFSI电解质膜和3种不同质量比的活性无机电解质填料对复合固态电解质离子电导率的影响。结果表明,Li_(6.4)La_(3)Zr_(1.4)Ta_(0.6)O_(12)和Li_(1+x)Al_(x)Ti_(2-x)(PO_(4))_(3)质量比为1∶1时,电解质膜的XRD图谱的衍射峰比纯PVDF-LiTFSI下降更为明显,电化学窗口为3.9 V左右,表现出更好的稳定性。在不同温度下分别测量其离子电导率发现,Li_(6.4)La_(3)Zr_(1.4)Ta_(0.6)O_(12)和Li_(1+x)Al_(x)Ti_(2-x)(PO_(4))_(3)质量比为1∶1时的电解质膜均高于纯PVDF-LiTFSI电解质膜和Li_(6.4)La_(3)Zr_(1.4)Ta_(0.6)O_(12)和Li_(1+x)Al_(x)Ti_(2-x)(PO_(4))_(3)质量比为2∶1和3∶1时的电解质膜。将其装配成电池后发现,0.1C下电池首次充放电比容量分别为90 m A·h/g和87 m A·h/g。以0.5C的电流循环25圈,放电比容量从57 mA·h/g衰减至51mA·h/g,容量保持率为99.7%。所以,以PVDF为基、Li_(6.4)La_(3)Zr_(1.4)Ta_(0.6)O_(12)和Li_(1+x)Al_(x)Ti_(2-x)(PO_(4))_(3)质量比为1∶1的固态电解质膜有优良的倍率性能和循环稳定性能。展开更多
The piezotronics effect utilizes a piezopotential to modulate and control current in piezo-semiconductors.Ferroelectric materials,as a type of piezoelectric materials,possess piezoelectric coefficients that are signif...The piezotronics effect utilizes a piezopotential to modulate and control current in piezo-semiconductors.Ferroelectric materials,as a type of piezoelectric materials,possess piezoelectric coefficients that are significantly larger than those found in conventional piezoelectric materials.Here,we propose a strain modulated ferroelectric field-effect transistor(St-FeFET)utilizing external strain instead of gate voltage to achieve ferroelectric modulation,which eliminates the need for gate voltage.By applying a very small strain(0.01%),the St-FeFET can achieve a maximum on-off current ratio of 1250%and realizes a gauge factor(GF)of 1.19×10^(6),which is much higher than that of conventional strain sensors.This work proposes a new method for realizing highly sensitive strain sensors and presents innovative approaches to the operation methods of ferroelectric field-effect transistors as well as potential applications for coupling of strain sensors and various devices across different fields.展开更多
文摘NASICON型快离子导体Li_(1+x)Al_(x)Ti_(2-x)(PO_(4))_(3)(LATP)具有较高的离子电导率、较宽的电化学窗口及良好的水和空气稳定性,但其界面接触性能差。石榴石型Li_(7)La_(3)Zr_(2)O_(12)(LLZO)锂离子电导率高、电化学窗口较宽且热稳定性好,但其立方相结构不稳定,影响其实际应用。采用溶液浇筑法,制备纯PVDF-LiTFSI电解质膜和以PVDF为基、3种不同质量比的Li_(6.4)La_(3)Zr_(1.4)Ta_(0.6)O_(12)(LLZTO)和Li_(1+x)Al_(x)Ti_(2-x)(PO_(4))_(3)的固态电解质膜,并探讨纯PVDF-LiTFSI电解质膜和3种不同质量比的活性无机电解质填料对复合固态电解质离子电导率的影响。结果表明,Li_(6.4)La_(3)Zr_(1.4)Ta_(0.6)O_(12)和Li_(1+x)Al_(x)Ti_(2-x)(PO_(4))_(3)质量比为1∶1时,电解质膜的XRD图谱的衍射峰比纯PVDF-LiTFSI下降更为明显,电化学窗口为3.9 V左右,表现出更好的稳定性。在不同温度下分别测量其离子电导率发现,Li_(6.4)La_(3)Zr_(1.4)Ta_(0.6)O_(12)和Li_(1+x)Al_(x)Ti_(2-x)(PO_(4))_(3)质量比为1∶1时的电解质膜均高于纯PVDF-LiTFSI电解质膜和Li_(6.4)La_(3)Zr_(1.4)Ta_(0.6)O_(12)和Li_(1+x)Al_(x)Ti_(2-x)(PO_(4))_(3)质量比为2∶1和3∶1时的电解质膜。将其装配成电池后发现,0.1C下电池首次充放电比容量分别为90 m A·h/g和87 m A·h/g。以0.5C的电流循环25圈,放电比容量从57 mA·h/g衰减至51mA·h/g,容量保持率为99.7%。所以,以PVDF为基、Li_(6.4)La_(3)Zr_(1.4)Ta_(0.6)O_(12)和Li_(1+x)Al_(x)Ti_(2-x)(PO_(4))_(3)质量比为1∶1的固态电解质膜有优良的倍率性能和循环稳定性能。
基金supported by the National Natural Science Foundation of China(No.52192611)Beijing Municipal Natural Science Foundation(No.Z230024)the Fundamental Research Funds for the Central Universities.
文摘The piezotronics effect utilizes a piezopotential to modulate and control current in piezo-semiconductors.Ferroelectric materials,as a type of piezoelectric materials,possess piezoelectric coefficients that are significantly larger than those found in conventional piezoelectric materials.Here,we propose a strain modulated ferroelectric field-effect transistor(St-FeFET)utilizing external strain instead of gate voltage to achieve ferroelectric modulation,which eliminates the need for gate voltage.By applying a very small strain(0.01%),the St-FeFET can achieve a maximum on-off current ratio of 1250%and realizes a gauge factor(GF)of 1.19×10^(6),which is much higher than that of conventional strain sensors.This work proposes a new method for realizing highly sensitive strain sensors and presents innovative approaches to the operation methods of ferroelectric field-effect transistors as well as potential applications for coupling of strain sensors and various devices across different fields.
