Heavy doped n-typeβ-G_(2)O_(3)(HD-G_(2)O_(3))was obtained by employing Si ion implantation technology on unintentionally dopedβ-G_(2)O_(3)single crystal substrates.To repair the G_(2)O_(3)lattice damage and activate...Heavy doped n-typeβ-G_(2)O_(3)(HD-G_(2)O_(3))was obtained by employing Si ion implantation technology on unintentionally dopedβ-G_(2)O_(3)single crystal substrates.To repair the G_(2)O_(3)lattice damage and activate the Si after implantation,the implanted substrates were annealed at 950℃,1000℃,and 1100℃,respectively.High-resolution X-ray diffraction and high-resolution transmission electron microscopy show that the ion-implanted layer has high lattice quality after high-temperature annealing at 1000℃.The minimum specific contact resistance is 9.2×10^(-5)Ω·cm^(2),which is attributed to the titanium oxide that is formed at the Ti/G_(2)O_(3)interface via rapid thermal annealing at 480℃.Based on these results,the lateralˇ-G_(2)O_(3)diodes were prepared,and the diodes exhibit high forward current density and low specific on-resistance.展开更多
基金supported in part by the National Key Research and Development Program of China(No.2018YFB2200500)the National Natural Science Foundation of China(No.62050073,62090054,and 61975196)the Key Research Program of Frontier Sciences,CAS(No.QYZDY-SSW-JSC022)。
文摘Heavy doped n-typeβ-G_(2)O_(3)(HD-G_(2)O_(3))was obtained by employing Si ion implantation technology on unintentionally dopedβ-G_(2)O_(3)single crystal substrates.To repair the G_(2)O_(3)lattice damage and activate the Si after implantation,the implanted substrates were annealed at 950℃,1000℃,and 1100℃,respectively.High-resolution X-ray diffraction and high-resolution transmission electron microscopy show that the ion-implanted layer has high lattice quality after high-temperature annealing at 1000℃.The minimum specific contact resistance is 9.2×10^(-5)Ω·cm^(2),which is attributed to the titanium oxide that is formed at the Ti/G_(2)O_(3)interface via rapid thermal annealing at 480℃.Based on these results,the lateralˇ-G_(2)O_(3)diodes were prepared,and the diodes exhibit high forward current density and low specific on-resistance.
