Transition metal coordination polymers with flexible dicarboxylate ligand:Synthesis,characterization,and photoluminescence property

Under solvothermal conditions,six new coordination polymers(CPs)[Mn(L)(phen)(H_(2)O)]_(n)(1),[Co(L)(phen)(H_(2)O)]_(n)(2),[Cu(L)(phen)(H_(2)O)]_(n)(3),[Zn_(2)(L)_(2)(phen)2(H_(2)O)]_(n)(4),[Zn(L)(phen)]_(n)(5),and[Cd(L)(phen)2]_(n)(6)were synthesized by reactions of dicarboxylate ligand 2,2'-(1,2-phenylenebis(methylene))bis(sulfanediyl)dinobutyric acid(H_(2)L)and 1,10-phenanthroline(phen)with the corresponding metal salts.Complexes 1-6 have been structurally characterized by single-crystal X-ray diffraction analyses,elemental analysis,IR,thermogravimetric analysis,and powder X-ray diffraction.The structures of 1-6 are 1D chains,which are further connected by hydrogen bonding interac-tions to form 3D supramolecular structures.Among them,1 and 2 are isomorphic with L2-of syn-conformation,while L2-shows anti-conformation in 3-6.In addition,the solid-state photoluminescence property of 4-6 was investigated.

Assembly of functional carboxymethyl cellulose/polyethylene oxide/anatase TiO_(2) nanocomposites and tuning the dielectric relaxation, optical, and photoluminescence performances

Nanocomposite films consisting of carboxymethyl cellulose,polyethylene oxide(CMC/PEO),and anatase titanium diox-ide(TO)were produced by the use of sol-gel and solution casting techniques.TiO2 nanocrystals were effectively incorporated into CMC/PEO polymers,as shown by X-ray diffraction(XRD)and attenuated total reflectance fourier transform infrared(ATR-FTIR)analysis.The roughness growth is at high levels of TO nanocrystals(TO NCs),which means increasing active sites and defects in CMC/PEO.In differential scanning calorimetry(DSC)thermograms,the change in glass transition temperature(Tg)val-ues verifies that the polymer blend interacts with TO NCs.The increment proportions of TO NCs have a notable impact on the dielectric performances of the nanocomposites,as observed.The electrical properties of the CMC/PEO/TO nanocomposite undergo significant changes.The nanocomposite films exhibit a red alteration in the absorption edge as the concentration of TO NCs increases in the polymer blend.The decline in the energy gap is readily apparent as the weight percentage of TO NCs increases.The photoluminescence(PL)emission spectra indicate that the sites of the luminescence peak maximums show slight variation;peaks get wider,while their intensities decrease dramatically as the concentration of TO increases.These nanocomposite materials show potential for multifunctional applications including optoelectronics,antireflection coatings,pho-tocatalysis,light emitting diodes,and solid polymer electrolytes.

Ostensibly perpetual optical data storage in glass with ultra-high stability and tailored photoluminescence

Long-term optical data storage(ODS)technology is essential to break the bottleneck of high energy consumption for information storage in the current era of big data.Here,ODS with an ultralong lifetime of 2×10^(7)years is attained with single ultrafast laser pulse induced reduction of Eu^(3+)ions and tailoring of optical properties inside the Eu-doped aluminosilicate glasses.We demonstrate that the induced local modifications in the glass can stand against the temperature of up to 970 K and strong ultraviolet light irradiation with the power density of 100 kW/cm^(2).Furthermore,the active ions of Eu^(2+)exhibit strong and broadband emission with the full width at half maximum reaching 190 nm,and the photoluminescence(PL)is flexibly tunable in the whole visible region by regulating the alkaline earth metal ions in the glasses.The developed technology and materials will be of great significance in photonic applications such as long-term ODS.

Photoluminescence Enhancement of Aluminum Ion Intercalated MoS_(2)Quantum Dots

Low photolumines-cence(PL)quantum yield of molybdenum disulfide(MoS_(2))quan-tum dots(QDs)has lim-ited practical applica-tion as potential fluores-cent materials.Here,we report the intercalation of aluminum ion(Al^(3+))to enhance the PL of MoS_(2)QDs and the un-derlying mechanism.With detailed characterization and exciton dynamics study,we suggest that additional surface states including new emission centers have been effectively introduced to MoS_(2)QDs by the Al^(3+)intercalation.The synergy of new radiative pathway for exciton re-combination and the passivation of non-radiative surface traps is responsible for the en-hanced fluorescence of MoS_(2)QDs.Our findings demonstrate an efficient strategy to improve the optical properties of MoS_(2)QDs and are important for understanding the regulation effect of surface states on the emission of two dimensional sulfide QDs.

Temperature-dependent photoluminescence of lead-free cesium tin halide perovskite microplates

Tin halide perovskites recently have attracted extensive research attention due to their similar electronic and band structures but non-toxicity compared with their lead analogues. In this work, we prepare high-quality CsSnX_(3)(X=Br,I) microplates with lateral sizes of around 1–4 μm by chemical vapor deposition and investigate their low-temperature photoluminescence(PL) properties. A remarkable splitting of PL peaks of the CsSnBr_(3)microplate is observed at low temperatures. Besides the possible structural phase transition at below 70 K, the multi-peak fittings using Gauss functions and the power-dependent saturation phenomenon suggest that the PL could also be influenced by the conversion from the emission of bound excitons into free excitons. With the increase of temperature, the peak position shows a blueshift tendency for CsSnI_(3), which is governed by thermal expansion. However, the peak position of the CsSnBr3microplate exhibits a transition from redshift to blueshift at ~160 K. The full width at half maximum of CsSnX_(3)broadens with increasing temperature, and the fitting results imply that longitudinal optical phonons dominate the electron–phonon coupling and the coupling strength is much more robust in CsSnBr3than in CsSnI_(3). The PL intensity of CsSnX_(3)microplates is suppressed due to the enhanced non-radiative relaxation and exciton dissociation competing with radiative recombination. According to the Arrhenius law, the exciton binding energy of CsSnBr_(3)is ~38.4 meV, slightly smaller than that of CsSnI_(3).

Anomalous photoluminescence enhancement and resonance charge transfer in type-II 2D lateral heterostructures

Type-Ⅱband alignment can realize the efficient charge transfer and separation at the semiconductor heterointerface,which results in photoluminescence(PL)quenching.Recently,several researches demonstrated great enhancement of localized PL at the interface of type-Ⅱtwo-dimensional(2D)heterostructure.However,the dominant physical mechanism of this enhanced PL emission has not been well understood.In this work,we symmetrically study the exciton dynamics of type-Ⅱlateral heterostructures of monolayer MoS_(2) and WS_(2) at room temperatures.The strong PL enhancement along the one-dimensional(1D)heterointerface is associated with the trion emission of the WS_(2) shell,while a dramatic PL quenching of neutral exciton is observed on the MoS_(2) core.The enhanced quantum yield of WS2trion emission can be explained by charge-transfer-enhanced photoexcited carrier dynamics,which is facilitated by resonance hole transfer from MoS_(2) side to WS_(2) side.This work sheds light on the 1D exciton photophysics in lateral heterostructures,which has the potential to lead to new concepts and applications of optoelectronic device.

Thermally enhanced photoluminescence and temperature sensing properties of Sc2W3O12:Eu3+ phosphors

Recently, lanthanide-ion-doped luminescent materials have been extensively used as optical thermometry probes due to their fast responses, non-contact, and high sensitivity properties. Based on different responses of two emissions to temperature, the fluorescence intensity ratio(FIR) technique can be used to estimate the sensitivities for assessing the optical thermometry performances. In this study, we introduce different doping concentrations of Eu^(3+) ions into negative thermal expansion material Sc2W3O12to increase the thermal-enhanced luminescence from 373 K to 548 K, and investigate the temperature sensing properties in detail. All samples can exhibit their good luminescence behaviors thermally enhanced.The emission intensity of Sc2W3O12:6-mol% Eu3+phosphor reaches 147.8% of initial intensity at 473 K. As the Eu3+doping concentration increases, the resistance of the sample to thermal quenching decreases. The FIR technique based on each of the transitions 5D→7F_(1)(592 nm) and 5D→7F_(2)(613 nm) of Eu3+ions demonstrates a maximum relative temperature sensitivity of 3.063% K-1at 298 K for Sc_(2)W_(3)O_(12):6-mol% Eu3+phosphor. The sensitivity of sample decreases with the increase of Eu3+concentration. Benefiting from the thermal-enhanced luminescence performance and good temperature sensing properties, the Sc_(2)W_(3)O_(12):Eu^(3+)phosphors can be used as optical thermometers.

Synthesis and photoluminescence properties of single-crystal ZnO hexagonal pyramids by PEG400-assisted thermal decomposition route

Large-scale synthesis of ZnO hexagonal pyramids was achieved by a simple thermal decomposition route of precursor at 240 oC in the presence of PEG400. The precursor was obtained by room-temperature solid-state grinding reaction between Zn（CH3COO）2-2H2O and Na2CO3. Crystal structure and morphology of the products were analyzed and characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and high-resolution transmission electron microscopy （HRTEM）. The results of further experiments show that PEG400 has an important role in the formation of ZnO hexagonal pyramids. Difference between the single and double hexagonal pyramid structure may come from the special thermal decomposition reaction. The photoluminescence （PL） spectra of ZnO hexagonal pyramids exhibit strong near-band-edge emission at about 386 nm and weak green emission at about 550 nm. The Raman-active vibration at about 435 cm-1 suggests that the ZnO hexagonal pyramids have high crystallinity.

Morphology, photoluminescence and gas sensing of Ce-doped ZnO microspheres

Ce-doped ZnO microspheres were solvothermally prepared, and their microstructure, morphology, photoluminescence, and gas sensing were investigated by X-ray diffractometer, field emission scanning electron microscopy, transmission electron microscopy, fluorescence spectrometer and gas sensing analysis system. The results showed that the Ce-doped ZnO microspheres were composed of numerous nanorods with a diameter of 70 nm and a wurtzite structure. Ce-doping could cause a morphological transition from loose nanorods assembly to a tightly assembly in the microspheres. Compared with pure ZnO, the photoluminescence of the Ce-doped microspheres showed red-shifted UV emission and an enhanced blue emission. Particularly, the Ce-doped ZnO sensors exhibited much higher sensitivity and selectivity to ethanol than that of pure ZnO sensor at 320 °C. The ZnO microspheres doped with 6% Ce (mole fraction) exhibited the highest sensitivity (about 30) with rapid response (2 s) and recovery time (16 s) to 50×10?6 ethanol gas.

Low-Temperature Growth and Photoluminescence of SnO_2 Nanowires

SnO2 nanowires with a diameter of 25nm are synthesized at 550~C by Au-Ag catalyst assisted thermal evapora- tion of SnO powders. The room-temperature photoluminescence spectra （PL） of the prepared nanowires are measured. Among the four PL peaks,the peak of 418nm is newly observed. This peak is caused by the plane defects of the twinned crystal nanowires. The formation of SnO2 nanowires at low temperature is pursued on the basis of the VLS mechanism and application of the reaction source of SnO. We suggest that the chemical reactions of the low temperature and low concen- tration of the vaporized species are responsible for the thinner size of the SnO2 nanowires.

Origin of Photoluminescence of Neodymium-Implanted Silicon

Neodymium is incorporated into single crystalline silicon on MEVVA (Metal Vapor Vacuum Arc) ion source.At room temperature,strong ultra violet and visible fluorescence are observed at the excitation wavelength of 220nm.Luminescence intensity increases with the increase of ion fluence.XPS results manifest that Si-O,Nd-O,Si-Si and O-O bonds exist in the implanted layers.Luminescence mainly results from the radiation transition in the intra 4f shell of Nd 3+ ion.The defects' and damages' contribution to the luminescence is also presented.

Time-resolved photoluminescence of anatase/rutile TiO_2 phase junction revealing charge separation dynamics

Junctions are an important structure that allows charge separation in solar cells and photocatalysts. Here, we studied the charge transfer at an anatase/rutile TiO2 phase junction using time-resolved photoluminescence spectroscopy. Visible （-S00 nm） and near-infrared （NIR, -830 nm） emissions were monitored to give insight into the photoinduced charges of anatase and rutile in the junction, respectively, New fast photoluminescence decay components appeared in the visible emission of futile-phase dominated TiO2 and in the NIR emission of many mixed phase TiO2samples. The fast decays confirmed that the charge separation occurred at the phase junction. The visible emission intensity from the mixed phase TiO2 increased, revealing that charge transfer from rutile to anatase was the main pathway. The charge separation slowed the microsecond time scale photolumines- cence decay rate for charge carriers in both anatase and rutile. However, the millisecond decay of the charge carriers in anatase TiO2 was accelerated, while there was almost no change in the charge carrier dynamics of rutile TiO2. Thus, charge separation at the anatase/rutile phase junction caused an increase in the charge carrier concentration on a microsecond time scale, because of slower electron-hole recombination. The enhanced photocatalytic activity previously observed at ana- tase/rutile phase junctions is likely caused by the improved charge carrier dynamics we report here. These findings may contribute to the development of improved photocatalytic materials.

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique,and optical emissions from the near-infrared to the visible are obtained.The optical band gap of the films increases from 1.91 eV to 2.92 eV by increasing the carbon content,and the photoluminescence（PL） peak shifts from 1.51 eV to 2.16 eV.The band tail state PL mechanism is confirmed by analysing the optical band gap,PL intensity,the Stocks shift of the PL,and the Urbach energy of the film.The PL decay times of the samples are in the nanosecond scale,and the dependence of the PL lifetime on the emission energy also supports that the optical emission is related to the radiative recombination in the band tail state.

Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys

The transitions of E0 ,E0 ＋A0, and E＋ in dilute GaAs（1-x） Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E＋ and E0 ＋ A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.

Synthesis and Photoluminescence of Amorphous Silicon Oxycarbide Nanowires

Synthesis of amorphous SiCO nanowires was carried out by means of direct current are discharge. Free-standing SiCO nanowires were deposited on the surface of a graphite crucible without any catalyst and template. The SiCO nanowires were analyzed by XRD, SEM, TEM, XPS, and FTIR. The SiCO nanowires were typically 20-100 gm in length and 10-100 nm in diameter as measured by SEM and TEM. The XPS and FTIR spectroscopy analysis confirmed that the Si atoms share bonds with O and C atoms in mixed SiCO units. The PL spectrum of the SiCO nanowires showed strong and stable white emissions at 454 and 540 nm. A plasma-assisted vapor-solid growth mechanism is proposed to be responsible for the formation of the SiCO nanowires.

SELECTIVELY-EXCITED PHOTOLUMINESCENCE IN NC-Si:Er

Erbium （Er） doped in nanocrystalline Si （nc-Si：Er） surrounded by SiO2 is investigated by selectivelyexcited photoluminescence（PL） technique. Optical transitions come from nc-Si （peak located at 1.39 eV, denoted as Enc-Si） and Er ions （peak located at 0. 81 eV, denoted as EEr） are measured when nc-Si：Er is excited by 1. 519 eV or higher excitation photon energy（Eex）. Although the Eex of 1.42 eV exceeds the peak energies of Enc-Si and EEr the Enc-Si and EE, emissions are unobserved. A resonant enhancement of the EEr emission is observed in nc-Si：Er. While the PL peak intensitiy of the Enc-Si transition is quenched under this Eex. The resonant-enhanced effect in nc-Si ：Er indicates that the energy transfer process of carriers from nc-Si to nearby Er ions is enhanced by resonant excitation.

Fabrication and temperature-dependent photoluminescence spectra of Zn–Cu–In–S quaternary nanocrystals

A series of Zn-Cu-In-S nanocrystals （ZCIS NCs） are prepared and the optical properties of the ZCIS NCs are tuned by adjusting the reaction time. It is interesting to observe that the temperature-dependent photoluminescence （PL） spectra of the ZCIS NCs show a redshift with decreasing intensity at low temperature （50-280 K） and a blueshift at high temperature （318--403 K）. The blueshift can be explained by the thermally active phonon-assisted tunneling from the excited states of the low-energy emission band to the excited states of the high-energy emission band.

Temperature-dependent photoluminescence of size-tunable ZnAgInSe quaternary quantum dots

Colloidal ZnAgInSe（ZAISe） quantum dots（QDs） with different particle sizes were obtained by accommodating the reaction time. In the previous research, photoluminescence（PL） of ZAISe QDs only could be tuned by changing the composition. In this work the size-tunable photoluminescence was observed successfully. The red shift in the photoluminescence spectra was caused by the quantum confinement effect. The time-resolved photoluminescence indicated that the luminescence mechanisms of the ZAISe QDs were contributed by three recombination processes. Furthermore, the temperature-dependent PL spectra were investigated. We verified the regular change of temperature-dependent PL intensity, peak energy, and the emission linewidth of broadening for ZAISe QDs. According to these fitting data, the activation energy（？E） of ZAISe QDs with different nanocrystal sizes was obtained and the stability of luminescence was discussed.

Thickness Dependent Behavior of Photoluminescence of Tris(8-hydroxyquinoline)Aluminum Film

In situ thickness dependent photoluminescence （PL） measurements of tris（8-hydroxyquinoline） aluminum（Alq3） film were performed. At the beginning of Alq3 deposition on the glass substrate, the Alq3 emission showed a sharp red-shift. Further deposition of Alq3 resulted slight red-shift, and finally tended to saturated value. The total red-shift of about 12 nm was observed for the Alq3 film thickness range from 2 to 500 nm.This red-shift was attributed to the change from the 2D to 3D exciton state with increasing Alq3 film thickness. Meanwhile, the PL intensity of Alq3 emission increased continuously, and showed a rate change at the initial deposition of Alq3 due to non-rediative decay of excitons arised from the interaction between excitons and the substrate, and finally tended to saturation with the Alq3 thickness.

Hydrothermal Synthesis of Rhombus-like SmCO3OH Microplates and Its Photoluminescence Property Doped with Eu^3＋

Rhombus-like SmCO3OH microplates with the edge lengths ranging from 5 μm to 10 μm and the thickness about 1.5 μm were synthesized through a simple hydrothermal method using urea as the precipitance. The structure and properties of the rhombus-like SmCO3OH microplates were characterized by X-ray diffraction, field-emission scanning electron microscopy, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. The optical property of the rhombus-like SmCO3OH microplates doped with Eu^3＋ was investigated by photoluminescence. A broad and strong emission band at 677 nm was obtained, which can be contributed to producing light conversion film.