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High-resolution melting-based TILLING of γ ray-induced mutations in rice 被引量:3
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作者 Shan LI Song-mei LIU +2 位作者 Hao-wei FU Jian-zhong HUANG Qing-yao SHU 《Journal of Zhejiang University-Science B(Biomedicine & Biotechnology)》 SCIE CAS CSCD 2018年第8期620-629,共10页
Targeting Induced Local Lesions IN Genomes (TILLING) is a reverse genetics strategy for the high-throughput screening of induced mutations.γ, radiation, which often induces both insertion/deletion (Indel) and poi... Targeting Induced Local Lesions IN Genomes (TILLING) is a reverse genetics strategy for the high-throughput screening of induced mutations.γ, radiation, which often induces both insertion/deletion (Indel) and point mutations, has been widely used in mutation induction and crop breeding. The present study aimed to develop a simple, high-throughput TILLING system for screening γ ray-induced mutations using high-resolution melting (HRM) analysis. Pooled rice (Oryza sativa) samples mixed at a 1:7 ratio of Indel mutant to wild-type DNA could be distinguished from the wild-type controls by HRM analysis. Thus, an HRM-TILLING system that analyzes pooled samples of four M2 plants is recommended for screening γ, ray-induced mutants in rice. For demonstration, a γ, ray-mutagenized M2 rice population (n=4560) was screened for mutations in two genes, OsLCT1 and SPDT, using this HRM-TILLING system. Mutations including one single nucleotide substitution (G→A) and one single nucleotide insertion (A) were identified in OsLCT1, and one tdnucleotide (TTC) deletion was identified in SPDT. These mutants can be used in rice breeding and genetic studies, and the findings are of importance for the application of γ, ray mutagenesis to the breeding of rice and other seed crops. 展开更多
关键词 Mutation screening High-resolution melting (HRM) analysis Targeting Induced Local Lesions IN Genomes (TILLING) Mutant INDEL γ ray RICE
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γ radiation caused graphene defects and increased carrier density 被引量:3
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作者 韩买兴 姬濯宇 +5 位作者 商立伟 陈映平 王宏 刘欣 李冬梅 刘明 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第8期288-292,共5页
We report on a micro-Raman investigation of inducing defects in mono-layer, hi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional (2D) and G band pos... We report on a micro-Raman investigation of inducing defects in mono-layer, hi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional (2D) and G band position evolution with the layer number increasing and D and D~ bands rising, suggesting the presence of defects and related crystal lattice deformation in graphene. Bi-layer graphene is more stable than mono- and tri-layer graphene, indicating that the former is a better candidate in the application of radiation environments. Also, the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density. 展开更多
关键词 graphene γ ray radiation Raman spectrum DEFECTS
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