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Investigation of helicity-dependent photocurrent of surface states in(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate
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作者 喻钦 俞金玲 +3 位作者 陈涌海 赖云锋 程树英 何珂 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第5期573-578,共6页
Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle... Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle-dependent HDPC,it is found that the HDPC is mainly contributed by the circular photogalvanic effect(CPGE)current when the incident plane is perpendicular to the connection of the two contacts,whereas the circular photon drag effect(CPDE)dominates the HDPC when the incident plane is parallel to the connection of the two contacts.In addition,the CPGE of the(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate is regulated by temperature,light power,excitation wavelength,the source–drain and ionic liquid top-gate voltages,and the regulation mechanisms are discussed.It is demonstrated that(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplates may provide a good platform for novel opto-spintronics devices. 展开更多
关键词 (Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate helicity-dependent photocurrent circular photogalvanic effect ionic liquid gating
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p型多晶Bi_(0.5)Sb_(1.5)Te_(3)合金类施主效应与热电性能 被引量:1
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作者 鲁志强 刘可可 +6 位作者 李强 胡芹 冯利萍 张清杰 吴劲松 苏贤礼 唐新峰 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2023年第11期1331-1337,I0012,I0013,共9页
晶粒细化是提高Bi_(0.5)Sb_(1.5)Te_(3)合金力学性能的有效途径,但是粉末冶金过程中晶粒细化导致的类施主效应会严重劣化材料热电性能,制约了Bi_(0.5)Sb_(1.5)Te_(3)基合金在微型热电器件中的应用。本研究围绕p型Bi_(0.5)Sb_(1.5)Te_(3... 晶粒细化是提高Bi_(0.5)Sb_(1.5)Te_(3)合金力学性能的有效途径,但是粉末冶金过程中晶粒细化导致的类施主效应会严重劣化材料热电性能,制约了Bi_(0.5)Sb_(1.5)Te_(3)基合金在微型热电器件中的应用。本研究围绕p型Bi_(0.5)Sb_(1.5)Te_(3)基合金,采用实验结合理论计算系统研究了粉末冶金制备过程中研磨和脱附气氛对烧结样品中类施主效应和电热输运性能的影响规律和机制。Bi_(0.5)Sb_(1.5)Te_(3)基合金破碎研磨过程中粉体表面产生缺陷V_(Te)^(··)和V_(Sb)^(")并物理吸附空气中的O_(2),在烧结过程中与吸附的O_(2)发生缺陷化学反应,产生大量V_(Te)空位和自由电子,导致类施主效应,使空穴浓度大幅降低。在保护气氛下(Ar气氛)研磨避免接触空气或在空气中研磨后放置在保护气氛下脱附O_(2),都可以有效抑制类施主效应,使样品保持较高的载流子浓度和电导率,且性能在473 K下保持稳定。在空气中研磨后直接烧结的样品和放置在空气中粉体烧结的样品表现出明显的类施主效应,样品的载流子浓度从保护气氛处理样品的4.49×10^(19)cm^(−3)下降至3.21×10^(19)cm^(−3),采用保护气氛处理的粉体烧结样品在402 K下获得最高的热电优值ZT为1.03,平均ZTave为0.92。该研究为调控p型多晶Bi_(2)Te_(3)基化合物的类施主效应和优化其热电性能提供了新思路。 展开更多
关键词 Bi_(0.5)Sb_(1.5)Te_(3)合金 类施主效应 载流子浓度 热电性能
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拓扑绝缘体(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜制备及其电输运性能研究
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作者 张哲瑞 仇怀利 +3 位作者 周同 黄文宇 葛威锋 杨远俊 《合肥工业大学学报(自然科学版)》 CAS 北大核心 2023年第11期1580-1584,共5页
文章利用分子束外延(molecular beam epitaxy, MBE)法,在超高真空的条件下,于蓝宝石衬底上制备超薄的高质量拓扑绝缘体(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜。利用反射高能电子衍射(reflection high-energy electron diffraction, RHEED)仪、... 文章利用分子束外延(molecular beam epitaxy, MBE)法,在超高真空的条件下,于蓝宝石衬底上制备超薄的高质量拓扑绝缘体(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜。利用反射高能电子衍射(reflection high-energy electron diffraction, RHEED)仪、X射线衍射(X-ray diffraction, XRD)仪、显微共焦激光拉曼光谱仪(micro confocal laser Raman spectrometer)和X射线光电子能谱(X-ray photoelectron spectroscopy, XPS)仪对不同Sb掺杂量的样品进行表征,并获得最佳的制备参数。研究结果表明:衬底温度为460℃时Bi和Te的流量比为1∶16左右;在Sb温度为350、360、370、380℃时,可以制得高质量的(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜。利用霍尔效应测量系统测量样品的电阻率、霍尔系数、迁移率和载流子浓度;测量结果表明,(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜的载流子浓度和主要载流子类型随x的变化而发生相应的变化,并伴随着费米能级位置的调谐,随着x的增加,在x=0.53到x=0.68的掺杂过程中,费米能级从导带下移到带隙,最终进入价带,多数载流子类型也从自由电子转变成空穴,(Bi_(1-x)Sb_(x))_(2)Te_(3)实现了从n型到p型的转化。 展开更多
关键词 分子束外延(MBE) 拓扑绝缘体 (Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜 霍尔系数 载流子迁移率
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Bi_2Te_3和Bi_(0.5)Sb_(1.5)Te_3的机械合金化法制备及其热电性能 被引量:7
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作者 胡淑红 赵新兵 +2 位作者 朱铁军 邬震泰 周邦昌 《中国有色金属学报》 EI CAS CSCD 北大核心 2000年第S1期73-76,共4页
用机械合金法制备了Bi2 Te3和Bi0 .5Sb1 .5Te3两种热电材料。XRD分析表明两种材料分别在球磨 1 75h和 31 5h后完全合金化。机械合金化合金粉末冷压后在不同温度烧结并测量了热电性能 ,其中Bi0 .5Sb1 .5Te3材料480℃烧结样的最高Seebeck... 用机械合金法制备了Bi2 Te3和Bi0 .5Sb1 .5Te3两种热电材料。XRD分析表明两种材料分别在球磨 1 75h和 31 5h后完全合金化。机械合金化合金粉末冷压后在不同温度烧结并测量了热电性能 ,其中Bi0 .5Sb1 .5Te3材料480℃烧结样的最高Seebeck系数约为 2 0 0 μV/K。 展开更多
关键词 机械合金化 热电材料 Bi2Te3 Bi0.5Sb1.5Te3 热电性能
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Bi_(0.5)Sb_(1.5)Te_3/聚苯胺复合材料的制备及电学性能 被引量:6
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作者 胡淑红 赵新兵 +1 位作者 朱铁军 周邦昌 《材料研究学报》 EI CAS CSCD 北大核心 2001年第2期260-262,共3页
用机械共混法制备了Bi0.5Sb1.5Te3/聚苯胺复合材料,测量了材料的电学性能参数.与Bi0.5Sb1.5Te3相比,复合材料的Seebeck系数略有下降.在290~300K温区内,复合材料的电导率随材料中聚苯胺... 用机械共混法制备了Bi0.5Sb1.5Te3/聚苯胺复合材料,测量了材料的电学性能参数.与Bi0.5Sb1.5Te3相比,复合材料的Seebeck系数略有下降.在290~300K温区内,复合材料的电导率随材料中聚苯胺含量的增加呈线性下降趋势.在室温下,聚苯胺加入量(质量分数)为2%的复合材料,其功率因子比Bi0.5Sb1.5Te3的低约30%. 展开更多
关键词 机械变混法 聚苯胺 无机/有机复合材料 热电性能 电导率
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SiC对粉碎烧结法制备P型Bi_(0.5)Sb_(1.5)Te_(3)合金热电性能的影响
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作者 王小宇 江威 +5 位作者 朱彬 孙远涛 向波 黄中月 杨双根 祖方遒 《粉末冶金技术》 CAS CSCD 北大核心 2022年第1期53-59,共7页
向粉碎法制备的Bi_(0.5)Sb_(1.5)Te_(3)+5%Te(质量分数)合金粉体中混入不同体积分数的SiC颗粒,利用放电等离子体烧结法制备SiC复合块体材料,探究块体材料组织和热电性能的变化规律。研究发现:随着SiC体积分数的增加,块体材料的取向性弱... 向粉碎法制备的Bi_(0.5)Sb_(1.5)Te_(3)+5%Te(质量分数)合金粉体中混入不同体积分数的SiC颗粒,利用放电等离子体烧结法制备SiC复合块体材料,探究块体材料组织和热电性能的变化规律。研究发现:随着SiC体积分数的增加,块体材料的取向性弱化,组织细化,载流子浓度增加,迁移率降低;由于取向性弱化及组织细化,加强了声子散射,降低了晶格热导率。由于SiC复合块体材料的电学性能恶化,块体材料的无量纲热电优值(ZT)并未获得显著的提升;当SiC体积分数为0.40%时,SiC复合块体材料在322 K时具有最优的无量纲热电优值(ZT=~0.81)。 展开更多
关键词 Bi_(0.5)Sb_(1.5)Te_(3) SiC复合 粉碎烧结 热电性能
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表面修饰工程协同优化Bi_(2)Te_(3)基微型热电器件的界面性能
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作者 唐昊 白辉 +6 位作者 吕嘉南 华思恒 鄢永高 杨东旺 吴劲松 苏贤礼 唐新峰 《物理学报》 SCIE EI CAS CSCD 北大核心 2022年第16期313-324,共12页
热电器件微型化对组成热电元件的界面性能提出了更高要求,获得低的界面接触电阻率和高的界面结合强度的异质结合界面,是成功制备高性能、高可靠性Bi_(2)Te_(3)基微型热电器件的前提条件.本研究采用酸洗方法对Bi_(0.4)Sb_(1.6)Te_(3)材... 热电器件微型化对组成热电元件的界面性能提出了更高要求,获得低的界面接触电阻率和高的界面结合强度的异质结合界面,是成功制备高性能、高可靠性Bi_(2)Te_(3)基微型热电器件的前提条件.本研究采用酸洗方法对Bi_(0.4)Sb_(1.6)Te_(3)材料进行表面修饰,实现了Bi_(0.4)Sb_(1.6)Te_(3)Te3/Ni热电元件界面性能的协同优化.酸洗过程有效调控了Bi_(0.4)Sb_(1.6)Te_(3)材料的表面功函数,显著降低了Ni层与Bi_(0.4)Sb_(1.6)Te_(3)Te_(3)材料间的接触势垒,从未酸洗处理的0.22 eV降至0.02 eV,势垒的降低使界面接触电阻率从未酸洗处理的14.2μΩ·cm~2大幅降至0.22μΩ·cm~2.此外,酸洗过程还能有效调控基体表面粗糙度,在基体表面形成2—5μm的V型凹坑,产生钉扎效应,极大地增强了材料表面与Ni层的物理结合,与约50 nm厚Bi_(0.4)Sb_(1.6)Te_(3)界面扩散反应区形成的冶金结合共同作用,使界面结合强度从未酸洗处理的7.14 MPa大幅增至22.34 MPa.这种优异的界面性能在微型热电器件中得到了进一步证实,采用该工艺处理后热电元件制备的4.7×4.9 mm~2微型热电器件,在热面温度300 K下的最大制冷温差达到56.5 K,在10 K温差下最大输出功率达到882μW.该研究为实现界面性能的协同优化提供了一种新策略,并为微型热电器件的性能优化开辟了新途径. 展开更多
关键词 Bi_(2)Te_(3)基微型热电器件 Bi_(0.4)Sb_(1.6)Te_(3)/Ni热电元件 表面修饰工程 界面接触电阻率 界面结合强度
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基于Ge_(2)Sb_(1.5)Bi_(0.5)Te_(5)可饱和吸收体的锁模光纤激光器
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作者 叶蕾 王顺 +3 位作者 姚中辉 蒋成 郭凯 张子旸 《光子学报》 EI CAS CSCD 北大核心 2022年第4期25-32,共8页
Ge_(2)Sb_(1.5)Bi_(0.5)Te_(5)薄膜具有宽光谱吸收和高稳定性的特点。在金镜上采用磁控溅射制备了40 nm厚的Ge_(2)Sb_(1.5)Bi_(0.5)Te_(5)薄膜,将其在150℃下退火20 min,退火后Ge_(2)Sb_(1.5)Bi_(0.5)Te_(5)由非晶态转变为晶态。测试发... Ge_(2)Sb_(1.5)Bi_(0.5)Te_(5)薄膜具有宽光谱吸收和高稳定性的特点。在金镜上采用磁控溅射制备了40 nm厚的Ge_(2)Sb_(1.5)Bi_(0.5)Te_(5)薄膜,将其在150℃下退火20 min,退火后Ge_(2)Sb_(1.5)Bi_(0.5)Te_(5)由非晶态转变为晶态。测试发现晶态Ge_(2)Sb_(1.5)Bi_(0.5)Te_(5)可饱和吸收体的调制深度提高到了原来的1.4倍,基于晶态Ge_(2)Sb_(1.5)Bi_(0.5)Te_(5)可饱和吸收体实现了脉冲宽度为1.52 ps、信噪比为47 dB的光纤锁模激光器。制备了40、60、80 nm的Ge_(2)Sb_(1.5)Bi_(0.5)Te_(5)薄膜,分析表明,随着Ge_(2)Sb_(1.5)Bi_(0.5)Te_(5)薄膜厚度的增加,光吸收率明显增加,这说明Ge_(2)Sb_(1.5)Bi_(0.5)Te_(5)薄膜的光学性质具有可控性,Ge_(2)Sb_(1.5)Bi_(0.5)Te_(5)材料在超快激光器中有应用潜力。 展开更多
关键词 Ge_(2)Sb_(1.5)Bi_(0.5)Te_(5) 可饱和吸收体 锁模 掺铒 光纤激光器 退火
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石墨烯/Bi_(0.5)Sb_(1.5)Te_(3)柔性热电薄膜及其面内散热器件的设计制备与性能评价
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作者 聂晓蕾 余灏成 +3 位作者 朱婉婷 桑夏晗 魏平 赵文俞 《物理学报》 SCIE EI CAS CSCD 北大核心 2022年第15期229-238,共10页
基于柔性热电薄膜制冷的面内散热技术有望为电子器件高效面内散热提供解决方案,但柔性热电薄膜电输运性能太低和面内散热器件结构设计困难严重制约了该技术在电子元器件散热中的应用.本文通过在环氧树脂/Bi_(0.5)Sb_(1.5)Te_(3)柔性热... 基于柔性热电薄膜制冷的面内散热技术有望为电子器件高效面内散热提供解决方案,但柔性热电薄膜电输运性能太低和面内散热器件结构设计困难严重制约了该技术在电子元器件散热中的应用.本文通过在环氧树脂/Bi_(0.5)Sb_(1.5)Te_(3)柔性热电薄膜中掺入具有同时调控电热输运行为功能的石墨烯,发现不仅有助于Bi_(0.5)Sb_(1.5)Te_(3)晶粒沿(000l)择优取向,而且还提供了载流子快速传输通道,石墨烯/Bi_(0.5)Sb_(1.5)Te_(3)柔性热电薄膜的载流子浓度和迁移率同时显著增大;石墨烯掺入量为1.0%的柔性热电薄膜室温最高功率因子达到1.56 mW/(K^(2)·m),与环氧树脂/Bi_(0.5)Sb_(1.5)Te_(3)柔性热电薄膜相比提高了71%,其最大制冷温差提高了1倍.利用这种高性能石墨烯/Bi_(0.5)Sb_(1.5)Te_(3)柔性热电薄膜制冷,设计并制备出了级联结构高效面内散热器件,发现该器件可以将热量从热源区逐级传输至散热区,实现热源区温度下降1.4—1.9℃,展现出了高效稳定的面内散热能力. 展开更多
关键词 石墨烯/Bi_(0.5)Sb_(1.5)Te_(3)柔性热电薄膜 电输运性能 载流子快速传输通道 面内散热器件
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Ni/Bi_(0.4)Sb_(1.6)Te_(3)热电材料的界面性能
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作者 况志祥 马燕 +3 位作者 徐晨辉 孔栋 冯波 樊希安 《粉末冶金材料科学与工程》 2022年第1期77-82,共6页
Bi_(0.4)Sb_(1.6)Te_(3)热电材料和金属电极之间的阻挡层是热电器件稳定服役的控制性因素,本文以不同温度下退火后的高致密Ni箔和Bi_(0.4)Sb_(1.6)Te_(3)合金为原料,采用放电等离子烧结扩散焊连接法在Bi_(0.4)Sb_(1.6)Te_(3)表面制备Ni... Bi_(0.4)Sb_(1.6)Te_(3)热电材料和金属电极之间的阻挡层是热电器件稳定服役的控制性因素,本文以不同温度下退火后的高致密Ni箔和Bi_(0.4)Sb_(1.6)Te_(3)合金为原料,采用放电等离子烧结扩散焊连接法在Bi_(0.4)Sb_(1.6)Te_(3)表面制备Ni层作为Ni/Bi_(0.4)Sb_(1.6)Te_(3)电极接头的阻挡层。采用X射线衍射仪对阻挡层进行物相分析,用扫描电镜及能谱仪观察和分析电极接头的界面形貌与元素分布。结果表明,在700℃退火后的Ni箔具有优良的防扩散效果,扩散厚度为9μm,用700℃退火后的Ni箔与Bi_(0.4)Sb_(1.6)Te_(3)扩散焊结合,获得13.19 MPa的结合强度。随Ni箔的退火温度升高,Ni/Bi_(0.4)Sb_(1.6)Te_(3)界面裂纹明显改善,这是由于随Ni箔退火温度升高,Ni与Bi_(0.4)Sb_(1.6)Te_(3)之间的晶格失配得到改善,从而使Ni层与Bi_(0.4)Sb_(1.6)Te_(3)的连接性能提高。 展开更多
关键词 Ni箔 Bi_(0.4)Sb_(1.6)Te_(3)合金 扩散焊 阻挡层 扩散层
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Bi_(0.5)Sb_(1.5)Te_(3)块体热电材料的高气压烧结与热电性能研究
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作者 庞超 李武 +3 位作者 仲德晗 陈上峰 李美玲 孙乃坤 《沈阳理工大学学报》 CAS 2021年第5期57-60,78,共5页
利用自制高压炉烧结制备Bi_(0.5)Sb_(1.5)Te_(3)块料,采用光学显微镜研究不同制备条件对Bi_(0.5)Sb_(1.5)Te_(3)样品形貌的影响,并采用X射线衍射仪、扫描电子显微镜、能谱仪和Seebeck系数电导率测试仪分析Bi_(0.5)Sb_(1.5)Te_(3)块体材... 利用自制高压炉烧结制备Bi_(0.5)Sb_(1.5)Te_(3)块料,采用光学显微镜研究不同制备条件对Bi_(0.5)Sb_(1.5)Te_(3)样品形貌的影响,并采用X射线衍射仪、扫描电子显微镜、能谱仪和Seebeck系数电导率测试仪分析Bi_(0.5)Sb_(1.5)Te_(3)块体材料的成分、元素含量和热电参数。X射线衍射结果表明:少量的氢原子和氮原子被引入到Bi_(0.5)Sb_(1.5)Te_(3)晶格中;在550℃、40MPa、氮气条件下制备的Bi_(0.5)Sb_(1.5)Te_(3)块体较好(直径为12.6mm,厚度为1.5mm),氮化后的Bi_(0.5)Sb_(1.5)Te_(3)在25℃时的功率因子为2379.5μW·m^(-1)·K^(-2)。 展开更多
关键词 Bi_(0.5)Sb_(1.5)Te_(3)块体 热电性能 高温高压 块体烧结
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Enhanced thermoelectric and mechanical properties of Bi_(0.5)Sb_(1.5)Te_(3) alloy with dispersed yttrium oxide ceramic nanoparticles
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作者 Cun-Cheng Li Ming-Wei Zhang +2 位作者 Ji-Wu Xin Lei Wei Wen-Yu Zhao 《Rare Metals》 SCIE EI CAS CSCD 2024年第4期1758-1768,共11页
Reducing thermal conductivity while avoiding adverse interfacial reactions during sintering is crucial for improving the thermoelectric performance of Bi_(2)Te_(3)based composites.Inert ceramic nanoparticles are good ... Reducing thermal conductivity while avoiding adverse interfacial reactions during sintering is crucial for improving the thermoelectric performance of Bi_(2)Te_(3)based composites.Inert ceramic nanoparticles are good candidates for achieving this goal.In this study,we designed and prepared a series of p-type Bi_(0.5)Sb_(1.5)Te_(3)nanocomposites decorated with Y_(2)O_(3)ceramic nanoparticles via ball-milling dispersion and spark-plasma sintering.Owing to the chemical stability of the ceramics,no traces of atomic doping or interfacial reactions were observed.Transport measurements revealed that the Y_(2)O_(3)nanoparticles distributed along the grain boundaries acted as energy-dependent carrier-filtering centers to improve the scattering parameter and Seebeck coefficient,contributing to the elevated power factor even with a decreased electrical conductivity.Moreover,the incorporated Y_(2)O_(3)nanoparticles and various defect structures they induced effectively strengthened the phonon scattering and suppressed the lattice thermal conductivity.Consequently,a peak figure of merit(ZT)of 1.23 at 313 K was achieved for 0.4%Y_(2)O_(3)/Bi_(0.5)Sb_(1.5)Te_(3),which is 13%higher than that of the matrix.In addition,the Vickers hardness of the composite material was 35%higher than that of the matrix.This study demonstrates the effectiveness of ceramic nanoparticles in synergistic ally improving the thermoelectric and mechanical properties,which may be further extended to other thermoelectric systems. 展开更多
关键词 Bi_(0.5)Sb_(1.5)Te_3 alloy Y_(2)O_(3) ceramic nanoparticles Microstructures Thermoelectric performance Mechanical properties
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Electrical property enhancement and lattice thermal conductivity reduction of n-type Mg_(3)Sb_(1.5)Bi_(0.5)-based Zintl compound by In&Se co-doping 被引量:1
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作者 Tong Liu Jiansong Liao +8 位作者 Hang Liu Runyu Wang Guocai Yuan Jing Jiang Yi Niu Xiaobo Lei Lihong Huang Chao Wang Qinyong Zhang 《Journal of Materiomics》 SCIE CSCD 2023年第3期431-437,共7页
Mg_(3)Sb_(1.5)Bi_(0.5)-based Zintl compounds have attracted extensive attention as potential thermoelectric materials due to their earth-abundant elements.However,pure and intrinsic Mg_(3)Sb_(1.5)Bi_(0.5)manifests a p... Mg_(3)Sb_(1.5)Bi_(0.5)-based Zintl compounds have attracted extensive attention as potential thermoelectric materials due to their earth-abundant elements.However,pure and intrinsic Mg_(3)Sb_(1.5)Bi_(0.5)manifests a poor thermoelectric performance because of its low electrical conductivity of about 3×10^(2)S/m at room temperature.In this work,In and Se co-doping was carried out to optimize the thermoelectric perfor-mance of n-type Mg_(3)Sb_(1.5)Bi_(0.5)-based material.The experimental results revealed that the carrier con-centration and mobility of Mg_(3)Sb_(1.5)Bi_(0.5)significantly increased after In and Se co-doping,leading to an improvement of power factor.Simultaneously,lattice thermal conductivity was significantly reduced due to the large mass difference between In and Mg.A maximum zT of 1.64 at 723 K was obtained for the Mg_(3.17)In_(0.03)Sb_(1.5)Bi_(0.49)Se_(0.01)sample.And an average zT value of about 1.1 between 300 and 723 K was achieved,which insures its possible application at medium temperature range as a non-toxic and low-cost TE material. 展开更多
关键词 Zintl compound Thermoelectric property n-type Mg_(3)Sb_(1.5)Bi_(0.5) In&Se co-doping
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基于Bi_(1.5)Sb_(0.5)Te_(1.8)Se_(1.2)材料的多凹槽型紫外线吸收器 被引量:1
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作者 张敬 薛文瑞 +2 位作者 张晨 陈宇婷 李昌勇 《中国激光》 EI CAS CSCD 北大核心 2022年第17期144-152,共9页
设计了一种基于Bi_(1.5)Sb_(0.5)Te_(1.8)Se_(1.2)材料的能对紫外线实现宽角度吸收的多凹槽型吸收器。采用有限元方法对该吸收器的吸收机制以及吸收特性与入射波波长、入射角度以及结构参数的依赖关系进行了研究。重点讨论了0°入... 设计了一种基于Bi_(1.5)Sb_(0.5)Te_(1.8)Se_(1.2)材料的能对紫外线实现宽角度吸收的多凹槽型吸收器。采用有限元方法对该吸收器的吸收机制以及吸收特性与入射波波长、入射角度以及结构参数的依赖关系进行了研究。重点讨论了0°入射时的吸收情况与结构参数之间的关系,并采用归一化的磁场强度分布对所得结果进行了解释。结果表明:该吸收器的吸收机制主要是表面等离子共振和光学谐振腔共振;在优化参数下,当入射角度为0°~70°时,该吸收器的吸收率均可达到80%以上。该吸收器在紫外传感、紫外光催化等领域具有潜在的应用价值。 展开更多
关键词 光学器件 紫外线吸收器 光栅 Bi_(1.5)Sb_(0.5)Te_(1.8)Se_(1.2) 表面等离子共振 光学谐振腔共振
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基于Bi_(1.5)Sb_(0.5)Te_(1.8)Se_(1.2)材料的光栅型紫外线吸收器
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作者 张敬 薛文瑞 +2 位作者 张晨 陈宇婷 李昌勇 《激光与光电子学进展》 CSCD 北大核心 2022年第5期280-287,共8页
基于Bi_(1.5)Sb_(0.5)Te_(1.8)Se_(1.2)材料,设计了一种光栅型紫外线吸收器。采用有限元方法,对该吸收器的吸收特性与结构参数、入射角度及工作波长的依赖关系进行了详细的分析。该吸收器的吸收机制是磁激元共振效应。通过调节结构参数... 基于Bi_(1.5)Sb_(0.5)Te_(1.8)Se_(1.2)材料,设计了一种光栅型紫外线吸收器。采用有限元方法,对该吸收器的吸收特性与结构参数、入射角度及工作波长的依赖关系进行了详细的分析。该吸收器的吸收机制是磁激元共振效应。通过调节结构参数、入射角度及工作波长,可以调节该吸收器的吸收特性。采用优化参数条件下,在200~400 nm的波段范围内,在0~75°的入射角度范围内,吸收率可以达到80%以上。该工作为紫外线吸收器的设计、制作和在紫外检测与防护、生物传感和紫外光催化等领域的应用提供了理论基础。 展开更多
关键词 吸收器 光栅 紫外光 Bi_(1.5)Sb_(0.5)Te_(1.8)Se_(1.2) 磁激元
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Promoted application potential of p-type Mg_(3)Sb_(1.5)Bi_(0.5)for thematched thermal expansion with its n-type counterpart 被引量:1
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作者 Jinsuo Hu Fengkai Guo +5 位作者 Muchun Guo Jianbo Zhu Chen Chen Qian Zhang Wei Cai Jiehe Sui 《Journal of Materiomics》 SCIE EI 2020年第4期729-735,共7页
Recently,n-type Mg3Sb1.5Bi0.5-based thermoelectric materials have attracted considerable attention for their extraordinary thermoelectric performance.Ideally,thermoelectric generators should be made of the same materi... Recently,n-type Mg3Sb1.5Bi0.5-based thermoelectric materials have attracted considerable attention for their extraordinary thermoelectric performance.Ideally,thermoelectric generators should be made of the same material system to avoid thermal mismatch in the practical application.In this work,p-type Mg3Sb1.5Bi0.5 which has almost the same composition as the state-of-the-art n-type Mg3.2Sb1.5Bi0.49-Te0.01Mn0.01 was synthesized by ball milling and spark plasma sintering,and then Na was chosen as an acceptor dopant to optimize the carrier concentration and further improve the thermoelectric performance.Na0.0075Mg2.9925Sb1.5Bi0.5 sample gets the highest ZT of~0.5 at 773 K.While Na0.005Mg2.995Sb1.5Bi0.5 sample shows the highest average ZT of~0.29 in the temperature range of 300 e773 K and matched thermal expansion behavior with the state-of-the-art n-type Mg3.2Sb1.5Bi0.49-Te0.01Mn0.01,which is of great significance for practical applications.Taking the Joule and Thompson heat into account,a high theoretical conversion efficiency(η)of~9.5%was calculated for the thermoelectric module consists of the present p-type Na0.005Mg2.995Sb1.5Bi0.5 and the state-of-the-art n-type Mg3.2Sb1.5Bi0.49Te0.01Mn0.01 with the leg length of 2 mm,and cold and hot side temperature of 300 K and 773 K,respectively,which shows a good potential for the use of this class of materials in the midtemperature power generation applications. 展开更多
关键词 THERMOELECTRIC Zintl phase p-type Mg_(3)Sb_(1.5)Bi_(0.5) Thermal expansion behavior Theoretical conversion efficiency
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Enhanced thermoelectric composite performance from mesoporous carbon additives in a commercial Bi_(0.5)Sb_(1.5)Te_(3) matrix
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作者 Seong-Tae Kim Jong Min Park +4 位作者 Kwi-Il Park Sang-Eun Chun Ho Seong Lee Pyuck-Pa Choi Seonghoon Yi 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2021年第35期175-182,共8页
Composites were prepared,through hot pressing,using carbon materials with different pore size distributions as additives for commercial Bi_(0.5)Sb_(1.5)Te_(3) thermoelectric material(BST,p-type).Thermoelectric propert... Composites were prepared,through hot pressing,using carbon materials with different pore size distributions as additives for commercial Bi_(0.5)Sb_(1.5)Te_(3) thermoelectric material(BST,p-type).Thermoelectric properties of the composites were measured in a temperature range of 298-473 K.Thermal conductivity of the composites,especially lattice thermal conductivity,was effectively decreased due to the mesoporous properties of the incorporated carbon additives.The electrical conductivity of the composites slightly decreased due to the electron scattering at the interface between the carbon material and the commercial BST matrix.The composite with 0.2 vol.%mesoporous carbon powder(36%mesoporosity)exhibited a figure of merit value approximately 10.7%higher than that of commercial BST without additives.This behavior resulted in 116%improved output power in the composite block-based single element compared with a bare BST thermoelectric block.The enhanced figure of merit was attributed to the effective reduction of lattice thermal conductivity by acoustic phonons scattering at the interface between the BST matrix and the mesoporous carbon as well as at the pore surfaces within the mesoporous carbon.By utilizing mesoporous carbon materials used in this study,the shortcomings and economic difficulties of the composite process with low dimensional carbon additives(carbon nanotubes,graphene,and nanodiamond)can be overcome for extensive practical applications.Mesoporous carbon powder with a tailored porosity distribution revealed the validity of bulk-type carbon additives to enhance the figure of merit of commercial thermoelectric materials. 展开更多
关键词 Thermoelectric material Bi_(0.5)Sb_(1.5)Te_(3) Mesoporous carbon Lattice thermal conductivity Figure of merit
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Effect of current on the microstructure and performance of (Bi_2Te_3)_(0.2)(Sb_2Te_3)_(0.8) thermoelectric material via field activated and pressure assisted sintering
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作者 陈瑞雪 孟庆森 +1 位作者 樊文浩 王忠 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第7期9-13,共5页
(Bi_2Te_3)_(0.2)(Sb_2Te_3)_(0.8) thermoelectric material was sintered via a field activated and pressure assisted sintering(FAPAS) process.By applying different current intensity(0,60,320 A/cm^2) in the si... (Bi_2Te_3)_(0.2)(Sb_2Te_3)_(0.8) thermoelectric material was sintered via a field activated and pressure assisted sintering(FAPAS) process.By applying different current intensity(0,60,320 A/cm^2) in the sintering process,the effects of electric current on the microstructure and thermoelectric performance were investigated.This demonstrated that the application of electric current in the sintering process could significantly improve the uniformity and density of(Bi_2Te_3)_(0.2)(Sb_2Te_3)_(0.8) samples.When the current intensity was raised to 320 A/cm^2,the preferred orientation of grains was observed.Moreover,positive effects on the thermoelectric performance of applying electric current in the sintering process were also confirmed.An increase of 0.02 and 0.11 in the maximum figure of merit ZT value could be acquired by applying current of 60 and 320 A/cm^2,respectively. 展开更多
关键词 thermoelectric material (Bi_2Te_3)_(0.2)(Sb_2Te_3)_(0.8) microstructure performance CURRENT field activated and pressure assisted sintering
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Enhanced thermoelectric performance in n-type Mg_(3.2)Sb_(1.5)Bi_(0.5) doping with lanthanides at the Mg site
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作者 Lu Yu Zipei Zhang +6 位作者 Juan Li Wenhao Li Shikai Wei Sitong Wei Guiwu Lu Weiyu Song Shuqi Zheng 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2022年第32期108-114,共7页
Mg-based thermoelectric materials have attracted more and more attention because of their rich composition elements,green environmental protection,and lower price.In recent years,the thermoelectric properties of n-typ... Mg-based thermoelectric materials have attracted more and more attention because of their rich composition elements,green environmental protection,and lower price.In recent years,the thermoelectric properties of n-type Mg_(3)Sb_(2) materials have been optimized by doping chalcogenide elements(S,Se,and Te)at the anionic position.In this work,n-type Mg_(3.2)A_(x)Sb_(1.5)Bi_(0.5)(A=Gd,Ho;x=0.01,0.02,0.03,and 0.4)samples were prepared by the cation site doping of lanthanide elements(Gd and Ho).The research results show that Gd and Ho doped n-type Mg3.2Sb1.5Bi0.5samples are entirely comparable to the S,Se,and Te doped n-type Mg3.2Sb1.5Bi0.5samples,demonstrating more excellent thermoelectric properties.Doping with lanthanides(Gd and Ho)at the Mg site increases the carrier concentration of the material to 8.161×10^(19)cm^(-3).Doping induces the contribution of more electron,thus obtaining higher conductivity.The maximum zT value of the Mg_(3.2)Gd_(0.02)Sb_(1.5)Bi_(0.5) and the Mg_(3.2)Ho_(0.02)Sb_(1.5)Bi_(0.5) samples reaches 1.61 and 1.55,respectively.This work theoretically and experimentally demonstrates Gd and Ho are efficient n-type dopants for Mg_(3.2)Sb_(1.5)Bi_(0.5) thermoelectric material. 展开更多
关键词 Thermoelectric material First-principles calculation Mg_(3.2)Sb_(1.5)Bi_(0.5)
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Room-temperature thermoelectric materials: Challenges and a new paradigm
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作者 Zhijia Han Jing-Wei Li +4 位作者 Feng Jiang Jiating Xia Bo-Ping Zhang Jing-Feng Li Weishu Liu 《Journal of Materiomics》 SCIE 2022年第2期427-436,共10页
Room-temperature thermoelectric materials provide promising solutions for energy harvesting from the environment,and deliver a maintenance-free power supply for the internet-of-things(IoTs).The currently available Bi_... Room-temperature thermoelectric materials provide promising solutions for energy harvesting from the environment,and deliver a maintenance-free power supply for the internet-of-things(IoTs).The currently available Bi_(2)Te_(3) family discovered in the 1950s,still dominates industrial applications,however,it has serious disadvantages of brittleness and the resource shortage of tellurium(1×10^(-3) ppm in the earth's crust).The novel Mg_(3)Sb_(2) family has received increasing attention as a promising alternative for room-temperature thermoelectric materials.In this review,the development timeline and fabrication strategies of the Mg 3 Sb 2 family are depicted.Moreover,an insightful comparison between the crystal-linity and band structures of Mg_(3)Sb_(2) and Bi_(2)Te_(3) is drawn.An outlook is presented to discuss challenges and new paradigms in designing room-temperature thermoelectric materials. 展开更多
关键词 Thermoelectric materials Mg_(3)Sb_(2) Bi_(2)Te_(3) Chemical bond engineering
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