An SF6/CF4 cyclic reactive-ion etching （RIE） method is proposed to suppress the surface roughness and to opti- mize the morphology of Ge fin, aiming at the fabrication of superior Ge FinFETs for future CMOS technolo...An SF6/CF4 cyclic reactive-ion etching （RIE） method is proposed to suppress the surface roughness and to opti- mize the morphology of Ge fin, aiming at the fabrication of superior Ge FinFETs for future CMOS technologies. The surface roughness of the Ge after RIE can be sufficiently reduced by introducing SF6-O2 etching steps into the CF4-O2 etching process, while maintaining a relatively large ratio of vertical etching over horizontal etching of the Ge. As a result, an optimized rms roughness of 0.9nm is achieved for Ge surfaces after the SF6/CF4 cyclic etching with a ratio of greater than four for vertical etching over horizontal etching of the Ge, by using a proportion of 60% for SF6-O2 etching steps.展开更多
Common insulation gas cannot normally work in refrigeration temperature range(153-243 K), especially in extremely cold regions. To solve this problem, this essay uses cubic equation combined with two-parameter model i...Common insulation gas cannot normally work in refrigeration temperature range(153-243 K), especially in extremely cold regions. To solve this problem, this essay uses cubic equation combined with two-parameter model in theorem of corresponding states to estimate dew-point of hybrid gas. The influence of temperature on mixing ratio is studied by using van der Waals equation. The result shows that the mixing ratio is stable during temperature-fall period. Insulation property of CF_4 and CF_4/N_2 in refrigeration temperature range is studied through self-designed low-temperature test system. The result shows when the density of hybrid gas is invariable, temperature changing has less influence on breakdown voltage, and when the mixing ratio is 20%, CF_4/N_2 is the greatest potential hybrid gas.展开更多
The flashover performance of insulating materials plays an important role in the development of high-voltage insulation systems.In this paper,silicone rubber(SIR)is modified by CF4 radio frequency capacitively coupled...The flashover performance of insulating materials plays an important role in the development of high-voltage insulation systems.In this paper,silicone rubber(SIR)is modified by CF4 radio frequency capacitively coupled plasma(CCP)for the improvement of surface insulation performance.The discharge mode and active particles of CCP are diagnosed by the digital single-lens reflex and the spectrometer.Scanning electron microscopy and x-ray photoelectron spectroscopy are used for the surface physicochemical properties of samples,while the surface charge dissipation,charge accumulation measurement,and flashover test are applied for the surface electrical characteristics.Experimental results show that the fluorocarbon groups can be grafted and the surface roughness increases after plasma treatment.Besides,the surface charge dissipation is decelerated and the positive charge accumulation is inhibited obviously for the treated samples.Furthermore,the surface flashover voltage can be increased by 26.67%after 10 min of treatment.It is considered that strong electron affinity of C–F and increased surface roughness can contribute to deepening surface traps,which not only inhibits the development of secondary electron emission avalanche but also alleviates the surface charge accumulation and finally improves the surface flashover voltage of SIR.展开更多
CF4 gas emitted in the semiconductor and display manufacturing process is a very harmful greenhouse gas.It must be removed or converted safely due to its extreme toxicity.Although a CF4 decomposition system using a th...CF4 gas emitted in the semiconductor and display manufacturing process is a very harmful greenhouse gas.It must be removed or converted safely due to its extreme toxicity.Although a CF4 decomposition system using a thermal plasma scrubber was commercialized,its removal efficiency is limited.In this work,a numerical analysis of CF4 decomposition in the thermal plasma scrubber was carried out in order to propose an efficient decomposition environment.The decomposition and recombination temperatures of CF4 were analyzed using thermodynamic equilibrium calculations.The chemical reaction of CF4 decomposition into carbon and fluorine gas was considered in this numerical analysis.The injection position and angle of the CF4 were controlled in order to enhance the decomposition rate.The vertical injection of CF4 near the torch exit improved the mixing of the CF4 with the thermal plasma flame.In addition,it was confirmed that the high temperature region expanded due to a vortex generated by strong turbulence in the bottleneck-shaped reactor.As a result,it is revealed that the CF4 injection location and the reactor configuration are the most important factors in improving the decomposition rate.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2011CBA00607the National Natural Science Foundation of China under Grant No 61376097+1 种基金the Zhejiang Provincial Natural Science Foundation of China under Grant No LR14F040001Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant No20130091110025
文摘An SF6/CF4 cyclic reactive-ion etching （RIE） method is proposed to suppress the surface roughness and to opti- mize the morphology of Ge fin, aiming at the fabrication of superior Ge FinFETs for future CMOS technologies. The surface roughness of the Ge after RIE can be sufficiently reduced by introducing SF6-O2 etching steps into the CF4-O2 etching process, while maintaining a relatively large ratio of vertical etching over horizontal etching of the Ge. As a result, an optimized rms roughness of 0.9nm is achieved for Ge surfaces after the SF6/CF4 cyclic etching with a ratio of greater than four for vertical etching over horizontal etching of the Ge, by using a proportion of 60% for SF6-O2 etching steps.
基金Project(51277063)supported by the National Natural Science Foundation of China
文摘Common insulation gas cannot normally work in refrigeration temperature range(153-243 K), especially in extremely cold regions. To solve this problem, this essay uses cubic equation combined with two-parameter model in theorem of corresponding states to estimate dew-point of hybrid gas. The influence of temperature on mixing ratio is studied by using van der Waals equation. The result shows that the mixing ratio is stable during temperature-fall period. Insulation property of CF_4 and CF_4/N_2 in refrigeration temperature range is studied through self-designed low-temperature test system. The result shows when the density of hybrid gas is invariable, temperature changing has less influence on breakdown voltage, and when the mixing ratio is 20%, CF_4/N_2 is the greatest potential hybrid gas.
基金supported by National Natural Science Foundation of China(Nos.11775175,U1766218,51827809)Natural Science Research Fund of Higher Education of Anhui Province(No.KJ2020A0246)。
文摘The flashover performance of insulating materials plays an important role in the development of high-voltage insulation systems.In this paper,silicone rubber(SIR)is modified by CF4 radio frequency capacitively coupled plasma(CCP)for the improvement of surface insulation performance.The discharge mode and active particles of CCP are diagnosed by the digital single-lens reflex and the spectrometer.Scanning electron microscopy and x-ray photoelectron spectroscopy are used for the surface physicochemical properties of samples,while the surface charge dissipation,charge accumulation measurement,and flashover test are applied for the surface electrical characteristics.Experimental results show that the fluorocarbon groups can be grafted and the surface roughness increases after plasma treatment.Besides,the surface charge dissipation is decelerated and the positive charge accumulation is inhibited obviously for the treated samples.Furthermore,the surface flashover voltage can be increased by 26.67%after 10 min of treatment.It is considered that strong electron affinity of C–F and increased surface roughness can contribute to deepening surface traps,which not only inhibits the development of secondary electron emission avalanche but also alleviates the surface charge accumulation and finally improves the surface flashover voltage of SIR.
文摘CF4 gas emitted in the semiconductor and display manufacturing process is a very harmful greenhouse gas.It must be removed or converted safely due to its extreme toxicity.Although a CF4 decomposition system using a thermal plasma scrubber was commercialized,its removal efficiency is limited.In this work,a numerical analysis of CF4 decomposition in the thermal plasma scrubber was carried out in order to propose an efficient decomposition environment.The decomposition and recombination temperatures of CF4 were analyzed using thermodynamic equilibrium calculations.The chemical reaction of CF4 decomposition into carbon and fluorine gas was considered in this numerical analysis.The injection position and angle of the CF4 were controlled in order to enhance the decomposition rate.The vertical injection of CF4 near the torch exit improved the mixing of the CF4 with the thermal plasma flame.In addition,it was confirmed that the high temperature region expanded due to a vortex generated by strong turbulence in the bottleneck-shaped reactor.As a result,it is revealed that the CF4 injection location and the reactor configuration are the most important factors in improving the decomposition rate.
