Total ionizing dose effect modeling method for CMOS digital-integrated circuit

Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID effects in complementary metaloxide semiconductor(CMOS)digital ICs based on the input/output buffer information specification(IBIS)was proposed.The digital IC was first divided into three parts based on its internal structure:the input buffer,output buffer,and functional area.Each of these three parts was separately modeled.Using the IBIS model,the transistor V-I characteristic curves of the buffers were processed,and the physical parameters were extracted and modeled using VHDL-AMS.In the functional area,logic functions were modeled in VHDL according to the data sheet.A golden digital IC model was developed by combining the input buffer,output buffer,and functional area models.Furthermore,the golden ratio was reconstructed based on TID experimental data,enabling the assessment of TID effects on the threshold voltage,carrier mobility,and time series of the digital IC.TID experiments were conducted using a CMOS non-inverting multiplexer,NC7SZ157,and the results were compared with the simulation results,which showed that the relative errors were less than 2%at each dose point.This confirms the practicality and accuracy of the proposed modeling method.The TID effect model for digital ICs developed using this modeling technique includes both the logical function of the IC and changes in electrical properties and functional degradation impacted by TID,which has potential applications in the design of radiation-hardening tolerance in digital ICs.

Testability Analysis at Switch Level for CMOS Circuits

In this paper we propose a controllability and observability measure at switch level for CMOS circuits based on the cost analysis approach.The complexity of the algorithm is nearly linear.

A Slice Analysis-Based Bayesian Inference Dynamic Power Model for CMOS Combinational Circuits

To improve the accuracy and speed in cycle-accurate power estimation, this paper uses multiple dimensional coefficients to build a Bayesian inference dynamic power model. By analyzing the power distribution and internal node state, we find the deficiency of only using port information. Then, we define the gate level number computing method and the concept of slice, and propose using slice analysis to distill switching density as coefficients in a special circuit stage and participate in Bayesian inference with port information. Experiments show that this method can reduce the power-per-cycle estimation error by 21.9% and the root mean square error by 25.0% compared with the original model, and maintain a 700 ＋ speedup compared with the existing gate-level power analysis technique.

Development of 0.50μm CMOS Integrated Circuits Technology

Submicron CMOS IC technology, including triple layer resist lithography technology, RIE, LDD, Titanium Salicide, shallow junction, thin gate oxide, no bird's beak isolation and channel's multiple implantation doping technology have been developed. 0.50μm. CMOS integrated circuits have been fabricated using this submicron CMOS process.

Design of a Low-Power CMOS LVDS I/O Interface Circuit

The paper presents the design and implementation of LVDS （low-voltage differential signaling） receiver circuit, fully compatible with LVDS standard. The proposed circuit is composed of the telescopic amplifier and the comparator with internal hysteresis. The receiver supports 3.5 Gbps data rate with 7.4 mA current at 1.8 V supply according to post-layout circuit simulations. The circuit has the power consumption of 13.1 MW. Comparing with the conventional circuit, the circuit is achieved to reduce the power consumption by 19.1% and the data rate by 14.3 %. The validity and effectiveness of the proposed circuit are verified through the circuit simulation with Samsung 0.18 μm CMOS （complementary metal-oxide-semiconductor） standard technology under the 1.8 V supply voltage.

Low phase noise LC VCO design in CMOS technology

This paper presents the design and the experimental measurements of two complementary metal-oxide-semiconductor (CMOS) LC-tuned voltage controlled oscillators (VCO) implemented in a 0.18 μm 6-metal-layer mixed-signal/RF CMOS technology. The design methodologies and approaches for the optimization of the ICs are presented. The first design is optimized for mixed-signal transistor, oscillated at 2.64 GHz with a phase noise of -93.5 dBc/Hz at 500 kHz offset. The second one optimized for RF transistor, using the same architecture, oscillated at 2.61 GHz with a phase noise of -95.8 dBc/Hz at 500 kHz offset. Under a 2 V supply, the power dissipation is 8 mW, and the maximum buffered output power for mixed-signal and RF transistor are -7 dBm and -5.4 dBm, respectively. Both kinds of oscillators make use of on-chip components only, allowing for simple and robust integration.

A Thermal-Conscious Integrated Circuit Power Model and Its Impact on Dynamic Voltage Scaling Techniques

We propose a novel thermal-conscious power model for integrated circuits that can accurately predict power and temperature under voltage scaling. Experimental results show that the leakage power consumption is underestimated by 52 % if thermal effects are omitted. Furthermore, an inconsistency arises when energy and temperature are simultaneously optimized by dynamic voltage scaling. Temperature is a limiting factor for future integrated circuits,and the thermal optimization approach can attain a temperature reduction of up to 12℃ with less than 1.8% energy penalty compared with the energy optimization one.

Energy Recovery Threshold Logic and Power Clock Generation Circuits

Energy recovery threshold logic (ERTL) is proposed,which combines threshold logic with adiabatic approach.ERTL achieves low energy as well as low gate complexity.A high efficiency power clock generator is also proposed,which can adjust duty cycle of MOS switch in power clock generator depending on logic complexity and operating frequency to achieve optimum energy efficiency.Closed-form results are derived,which facilitate efficiency-optimized design of the power clock generator.An ERTL PLA and a conventional PLA are designed and simulated on 0.35μm process.The energy efficiency of the proposed power clock generator can reach 77%～85% operating between 20～100MHz.Simulation results indicate that ERTL is a low energy logic.Including power loss of power clock circuits,ERTL PLA still shows 65%～77% power savings compared to conventional PLA.

A 12bit 300MHz Current-Steering CMOS D/A Converter

The proposed DAC consists of a unit current-cell matrix for 8MSBs and a binary-weighted array for 4LSBs,trading-off between the precision,speed,and size of the chip.In order to ensure the linearity of the DAC,a double Centro symmetric current matrix is designed by the Q2 random walk strategy.To achieve better dynamic performance,a latch is added in front of the current switch to change the input signal,such as its optimal cross-point and voltage level.For a 12bit resolution,the converter reaches an update rate of 300MHz.

200Ms/s 177mW 8bit Folding and Interpolating CMOS A/D Converter

A CMOS folding and interpolating analog-to-digital converter (ADC) for embedded application is described.The circuit is fully compatible with standard digital CMOS technology.A modified folding block implemented without resistor contributes to a small chip area.At the input stage,offset averaging reduces the input capacitance and the distributed track-and-hold circuits are proposed to improve signal-to-noise-plus-distortion ratio.The 200Ms/s 8bit ADC with 177mW total power consumption at 3.3V power supply is realized in standard digital 0.18μm 3.3V CMOS technology.

An Implementation of a CMOS Down-Conversion Mixer for GSM1900 Receivers

A 1.9GHz down-conversion CMOS mixer with a novel folded Gilbert cell,intended for use in GSM1900 （PCS1900） low-IF receivers,is fabricated in a RF 0.18μm CMOS process. The prototype demonstrates good performance at an intermediate frequency of 100kHz. It achieves a conversion gain of 6dB, SSB noise figure of 18. 5dB （1MHz IF） ,and IIP3 11.5dBm while consuming a 7mA current from a 3.3V power supply.

Low-Power Digital Circuit Design with Triple-Threshold Voltage

Triple-threshold CMOS technique provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with triple-threshold CMOS technique. While the low-threshold voltage transistors are used to reduce the propagation delay time in the critical path, the high-threshold voltage transistors are used to reduce the power consumption in the shortest path. Comparing with the conventional CMOS circuit, the circuit is achieved to reduce the power consumption by 14.71% and the power-delay-product by 16.11%. This circuit is designed with Samsung 0.35 um CMOS process. The validity and effectiveness are verified through the HSPICE simulation.

A 10bit 2GHz CMOS D/A Converter for High-Speed System Applications

This paper presents a 2GS/s 10bit CMOS digital-to-analog converter （DAC） that consists of two unit current-cell matrixes for 6MSBs and 4LSBs, respectively, trading off between the precision and size of the chip. Current mode logic （CML） is used to ensure high speed,and a double centro-symmetric current matrix is designed by the Q^2 random walk strategy in order to ensure the linearity of the DAC. The DAC occupies 2.2mm × 2.2mm of die area and consumes 790mW with a single 3.3V power supply.

Design, Fabrication, and Modeling of CMOS-Compatible Double Photodiode

A double photodiode (PD) constructed by p+/N-well junction and N-well/p-sub junction was designed and fabricated in a UMC 0.18-μm CMOS process. Based on the device structure and mechanism of double PD, a novel small-signal equivalent circuit model considering the carrier transit effect and the parasitic RC time constant was presented. By this model with complete electronic components, the double PD can be incorporated in a commercial circuit simulator. The component values were extracted by fitting the measured S-parameters using simulated annealing algorithm, and a good agreement between the measurement and the simulation results was achieved. © 2017, Tianjin University and Springer-Verlag Berlin Heidelberg.

Readout circuit with nonuniformity correction for the uncooled microbolometer

The output of uncooled microbolometer is nonuniform, and the traditional two-point nonuniformity correction method requires a tight restriction on substrate temperature. The circuit proposed by this article can relax the restriction on the substrate temperature and perform nonuniformity correction when reading out the image signal. The dummy pixels reduce static current. And the Column shared DACs transfer correction data to the gates of MOS transistors and the positive reference edge of amplifier, to control the bias current of detector and dummy one, and set the start point of integration. This circuit has higher sensitivity, wider dynamic range, and frame frequency of more than 30 Hz for 128×128 array. PSPICE simulation results seem that this circuit functions well.

GA-BASED MAXIMUM POWER DISSIPATION ESTIMATION OF VLSI SEQUENTIAL CIRCUITS OF ARBITRARY DELAY MODELS

In this paper, the glitching activity and process variations in the maximum power dissipation estimation of CMOS circuits are introduced. Given a circuit and the gate library, a new Genetic Algorithm (GA)-based technique is developed to determine the maximum power dissipation from a statistical point of view. The simulation on 1SCAS-89 benchmarks shows that the ratio of the maximum power dissipation with glitching activity over the maximum power under zero-delay model ranges from 1.18 to 4.02. Compared with the traditional Monte Carlo-based technique, the new approach presented in this paper is more effective.

2.5 Gb/s 16∶1 MUX IC Design with CMOS

A low-power and high-speed 16:1 MUX IC designed for Optical fiber communication based on TSMC 0.25 μm CMOS technology is represented. A tree-type architecture was utilized. The output data bit rate is 2.5 Gb/s at input clock rate of 1.25 GHz. The simulation results show that the output signal has peak-to-peak amplitude of 400 mV, the power dissipation is less than 200 mW and the power dissipation of core circuit is less than 20 mW at the 2.5 Gb/s standard bit rate and supply voltage of 2.5 V. The chip area is （1.8） mm2.

Chip Design of Li-Ion Battery Charger Operating in Constant-Current/Constant-Voltage Modes

A design for a Li-ion battery charger IC that can operate in a constant current-constant voltage （CC- CV） charge mode is proposed. In the CC-CV charge mode,the charger IC provides a constant charging current at the beginning, and then the charging current begins to decrease before the battery voltage reaches its final value. After the battery voltage reaches its final value and remains constant,the charging current is further reduced. This approach prevents charging the battery with full current near its saturated voltage,which can cause heating. The novel design of the core of the charger IC realizes the proposed CC-CV charge mode. The chip was implemented in a CSMC 0.6μm CMOS mixed signal process. The experimental results verify the realization of the proposed CC- CV charge mode. The voltage of the battery after charging is 4. 1833V.

A Compact Direct Digital Frequency Synthesizer for the Rubidium Atomic Frequency Standard

A compact direct digital frequency synthesizer （DDFS） for system-on-chip implementation of the high precision rubidium atomic frequency standard is developed. For small chip size and low power consumption, the phase to sine mapping data is compressed using sine symmetry technique, sine-phase difference technique, quad line approximation technique,and quantization and error read only memory （QE-ROM） technique. The ROM size is reduced by 98% using these techniques. A compact DDFS chip with 32bit phase storage depth and a 10bit on-chip digital to analog converter has been successfully implemented using a standard 0.35μm CMOS process. The core area of the DDFS is 1.6mm^2. It consumes 167mW at 3.3V,and its spurious free dynamic range is 61dB.

Energy Recovery Capacitance Coupling Logic and Its Synthesis Methodology

A novel energy recovery logic style ERCCL （energy recovery capacitance coupling logic） , which has good energy performance compared to the conventional CMOS logic and other advanced energy recovery logic, is proposed. ERCCL uses capacitance coupling to perform a logic function, so it can energy-efficiently implement a high fan-in complex logic in a single gate. ERCCL is also a type of threshold logic. The gate count of a system based on ERCCL can be significantly reduced,which,in turn,will decrease the energy loss. A threshold logic synthesis methodology for ERCCL is also presented. MCNC benchmarks are run through the proposed synthesis methodology. The results indicate that about an 80% reduction in gate count can be obtained when compared with the synthesis results of SIS.