A study on the minority carrier diffusion length in n-type GaN films

The minority carrier diffusion length of n-type GaN fdms grown by metalorganic chemical vapor deposition （MOCVD） has been studied by measuring the surface photovoltaic （PV） spectra. It was found that the minority carrier diffusion length of undoped n-type GaN is considerably larger than that in lightly Si-doped GaN. However, the data suggested that the dislocation and electron concentration appear not to be responsible for the minority cartier diffusion length. It is suggested that Si doping plays an important role in decreasing the minority carrier diffusion length.

Photoluminescence Analysis of Electron Damage for Minority Carrier Diffusion Length in GaInP/GaAs/Ge Triple-Junction Solar Cells

Photoluminescence（PL） measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0, 1.8 and 11.5 MeV electrons with fluences ranging up to 3 × 10^15, 1 × 10^15 and 3 × 10^14 cm^-2, respectively. The degradation rates of PL intensity increase with the electron fluence and energy. Furthermore, the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency. The damage coefficient increases with the electron energy. The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss（NIEL）, which shows a quadratic dependence between damage coefficient and NIEL.

Highly Fluorescent Semiconducting Two-Dimensional Conjugated Polymer Films Achieved by Side-Chain Engineering Showing Large Exciton Diffusion Length

Semiconducting two-dimensional conjugated polymers(2DCPs)with strong fluorescence emission have great potential for various optoelectronic applications.However,it is enormously challenging to achieve this goal due to the significant compact interlayerπ-πstacking-induced quenching effect in these systems.In this work,we found that highly fluorescent semiconducting 2DCPs can be prepared through an effective side-chain engineering approach in which interlayer spacers are introduced to reduce the fluorescence quenching effect.The obtained two truxene-based 2DCP films that,along with-C6H13 and-C_(12)H_(25)alkyl side chains as interlayer spacers both demonstrate superior fluorescence properties with a high photoluminescence quantum yield of 5.6%and 14.6%,respectively.These are among the highest values currently reported for 2DCP films.Moreover,an ultralong isotropic quasi-twodimensional exciton diffusion length constrained in the plane with its highest value approaching 110 nm was revealed by the transient photoluminescence microscopy technique,suggesting that theπ-conjugated structure in these truxene-based 2DCP films has effectively been extended.This work can enable a broad exploration of highly fluorescent semiconducting 2DCP films for more deeply fundamental properties and optoelectronic device applications.

Prediction model for the diffusion length in silicon-based solar cells

A novel approach to compute diffusion lengths in solar cells is presented. Thus, a simulation is done; it aims to give computational support to the general development of a neural networks （NNs）, which is a very powerful predictive modelling technique used to predict the diffusion length in mono-crystalline silicon solar cells. Furthermore, the computation of the diffusion length and the comparison with measurement data, using the infrared injection method, are presented and discussed.

Enhanced spin diffusion length by suppressing spin-flip scattering in lateral spin valves

The spin transport was investigated in permally （Py）/MgO/Ag junction with lateral spin valve structure. Non-local lateral spin valves measurement was carried out to determin, the apin accumulignal in Ag strip, and the spin dif u^sion - length in Ag of the lateral spin valves was extracted from devices with the different distances between injector and detector. The experimental results are found that spin accumulation and spin diffusion length （2s） could be significantly enhanced in Ag strip with MgO capping layer, and those effects may be attributed to the low-surface spin scattering rate in Ag with an MgO cap- ping layer.

Carrier diffusion coefficient is independent of defects in CH_(3)NH_(3)PbBr_(3) single crystals:Direct evidence

Organolead halide perovskite solar cells have attracted extensive interests in recent years. Thanks to innovations in materials process and technology, the power conversion efficiency (PCE) of perovskites-based solar cells increases from 3.8% to 25.2%[1–4].In evaluating the quality of perovskite materials, a few key photophysical properties such as the lifetime, mobility and diffusion length of photogenerated carriers are usually measured.

Over 12%efficient kesterite solar cell via back interface engineering

Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)has attracted considerable attention as a non-toxic and earthabundant solar cell material.During selenization of CZTSSe film at high temperature,the reaction between CZTSSe and Mo is one of the main reasons that result in unfavorable absorber and interface quality,which leads to large open circuit voltage deficit(VOC-def)and low fill factor(FF).Herein,a WO_(3)intermediate layer introduced at the back interface can effectually inhibit the unfavorable interface reaction between absorber and back electrode in the preliminary selenization progress;thus high-quality crystals are obtained.Through this back interface engineering,the traditional problems of phase segregation,voids in the absorber and over thick Mo(S,Se)_(2)at the back interface can be well solved,which greatly lessens the recombination in the bulk and at the interface.The increased minority carrier diffusion length,decreased barrier height at back interface contact and reduced deep acceptor defects give rise to systematic improvement in VOCand FF,finally a 12.66%conversion efficiency for CZTSSe solar cell has been achieved.This work provides a simple way to fabricate highly efficient solar cells and promotes a deeper understanding of the function of intermediate layer at back interface in kesterite-based solar cells.

Photoelectrochemical evaluation of SILAR-deposited nanoporous BiVO4 photoanodes for solar-driven water splitting

We report a photoelectrochemical investigation of BiVO4 photoanodes prepared by successive ionic layer adsorption and reaction(SILAR),a facile method that yields uniform nanoporous films.After characterization of the phase,morphology,composition,and optical properties of the prepared films,the efficiencies of charge separation(ηsep)and water oxidation(ηox)in solar water splitting cells employing these photoanodes were estimated following a previously reported procedure.Unexpected wavelength and illumination direction dependencies were discovered in the derived efficiencies,casting doubt on the validity of the analysis.An alternative approach using a diffusion–reaction model that explicitly considers the efficiency of electron collection resolved the discrepancies and explained the illumination direction dependence of the photocurrent.Electron diffusion lengths(Ln)of 0.45μm and 0.55μm were derived for pristine and cobalt phosphate(Co-Pi)modified BiVO4,respectively,which are much shorter than the film thickness of^2.1μm.The Co-Pi treatment also increasedηoxfrom 0.86 to^1,which is the main reason for the overall performance enhancement caused by adding Co-Pi.These findings suggest that there is little scope for improving the performance of SILAR-deposited BiVO4 photoanodes by further catalyzing water oxidation,but enhanced performance is achievable if electron transport can be improved.

Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage （SPV） curve before activation and the spectral response curve （SRC） after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability （SEP） can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future.

Thermal stability of the spin injection in Co/Ag/Co lateral spin valves

Spin injection, spin diffusion, and spin detection are investigated in Co/Ag/Co lateral spin valves at room temperature.Clear spin accumulation signals are detected by the non-local measurement. By fitting the results to the one-dimensional diffusion equation,8.6% spin polarization of the Co/Ag interface and -180 nm spin diffusion length in Ag are obtained.Thermal treatment results show that the spin accumulation signal drastically decreases after 100℃ annealing, and disappears under 200℃ annealing. Our results demonstrate that, compared to the spin diffusion length, the decrease and the disappearance of the spin accumulation signal are mainly dominated by the variation of the interfacial spin polarization of the Co/Ag interface.