In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improv...In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance.The breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V.The maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the AlGaN/GaN HEMTs exceed 30 and 20 GHz,respectively.The results demonstrate the potential of AlGaN/GaN HEMTs on freestanding GaN substrates for microwave power applications.展开更多
研究了高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)器件领域中占据主流地位的GaN基HEMT相关专利,并重点研究了该领域的专利技术发展趋势和布局。以大规模GaN膜和小尺寸GaN膜为主要切入点,针对GaN膜的材料质量所涉及的...研究了高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)器件领域中占据主流地位的GaN基HEMT相关专利,并重点研究了该领域的专利技术发展趋势和布局。以大规模GaN膜和小尺寸GaN膜为主要切入点,针对GaN膜的材料质量所涉及的专利的技术路径以及重点技术进行深入研究,对不同路径的技术进行比较,为GaN基HEMT领域的技术发展以及专利布局提供参考。展开更多
基金National Natural Science Foundation of China(No.62204127)the Natural Science Foundation of Jiangsu Province(No.BK20215093)State Key Laboratory of Luminescence and Applications(No.SKLA‒2021‒04)。
文摘In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance.The breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V.The maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the AlGaN/GaN HEMTs exceed 30 and 20 GHz,respectively.The results demonstrate the potential of AlGaN/GaN HEMTs on freestanding GaN substrates for microwave power applications.
文摘研究了高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)器件领域中占据主流地位的GaN基HEMT相关专利,并重点研究了该领域的专利技术发展趋势和布局。以大规模GaN膜和小尺寸GaN膜为主要切入点,针对GaN膜的材料质量所涉及的专利的技术路径以及重点技术进行深入研究,对不同路径的技术进行比较,为GaN基HEMT领域的技术发展以及专利布局提供参考。
