As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and l...As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.展开更多
Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor dep...Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor deposition(MOCVD) on an Fedoped semi-insulating(010) Ga_2O_3 substrate. The structure consisted of a 400 nm unintentionally doped(UID) Ga_2O_3 buffer layer and an 80 nm Si-doped channel layer. A high k HfO_2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at V_(gs) of 3 V. The off-state current was as low as 7.1 ×10^(-11) A/mm, and the drain current I_(ON)/I_(OFF) ratio reached 10~9. The transistors exhibited three-terminal off-state breakdown voltages of 450 and 550 V, corresponding to gate-to-drain spacing of 4 and 8 μm, respectively.展开更多
Halide vapor phase epitaxy(HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc.HVPE is a non-organic chemical vapor deposition(CVD) technique, characterized by high quality growth o...Halide vapor phase epitaxy(HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc.HVPE is a non-organic chemical vapor deposition(CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga_2O_3, with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga_2O_3 substrates and for the fabrication of high power β-Ga_2O_3 devices.展开更多
As a wide-bandgap semiconductor(WBG), β-Ga_2O_3 is expected to be applied to power electronics and solar blind UV photodetectors. In this review, defects in β-Ga_2O_3 single crystals were summarized, including dislo...As a wide-bandgap semiconductor(WBG), β-Ga_2O_3 is expected to be applied to power electronics and solar blind UV photodetectors. In this review, defects in β-Ga_2O_3 single crystals were summarized, including dislocations, voids, twin, and small defects. Their effects on device performance were discussed. Dislocations and their surrounding regions can act as paths for the leakage current of SBD in single crystals. However, not all voids lead to leakage current. There's no strong evidence yet to show small defects affect the electrical properties. Doping impurity was definitely irrelated to the leakage current. Finally, the formation mechanism of the defects was analyzed. Most small defects were induced by mechanical damages. The screw dislocation originated from a subgrain boundary. The edge dislocation lying on a plane slightly tilted towards the(102) plane, the(101) being the possible slip plane. The voids defects like hollow nanopipes, PNPs, NSGs and line-shaped grooves may be caused by the condensation of excess oxygen vacancies, penetration of tiny bubbles or local meltback. The nucleation of twin lamellae occurred at the initial stage of "shoulder part" during the crystal growth. These results are helpful in controlling the occurrence of crystal defects and improving the device performance.展开更多
Monoclinic gallium oxide(Ga_2O_3) has been grown on(0001) sapphire(Al_2O_3) substrate by plasma-assisted molecular beam epitaxy(PA-MBE). The epitaxial relationship has been confirmed to be [010]( 2ˉ01) β-Ga_2O_3||[ ...Monoclinic gallium oxide(Ga_2O_3) has been grown on(0001) sapphire(Al_2O_3) substrate by plasma-assisted molecular beam epitaxy(PA-MBE). The epitaxial relationship has been confirmed to be [010]( 2ˉ01) β-Ga_2O_3||[ 011ˉ0](0001)Al_2O_3 via in-situ reflection high energy electron diffraction(RHEED) monitoring and ex-situ X-ray diffraction(XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum(FWHM) of XRD ω-rocking curve of( 2ˉ01) plane and root mean square(RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C,respectively. Room temperature cathodoluminescence measurement shows an emission at ～417 nm, which is most likely originated from recombination of donor–acceptor pair(DAP).展开更多
The rapid development of bulk β-Ga_2O_3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap(～ 4.9 eV) and large breakdown e...The rapid development of bulk β-Ga_2O_3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap(～ 4.9 eV) and large breakdown electric field of about8 MV/cm. Low cost and high quality of large β-Ga_2O_3 single-crystal substrates can be attained by melting growth techniques widely used in the industry. In this paper, we first present an overview of the properties of β-Ga_2O_3 crystals in bulk form. We then describe the various methods for producing bulk β-Ga_2O_3 crystals and their applications. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.展开更多
The electronic structures and optical properties of β-Ga_2O_3 and Si-and Sn-doped β-Ga_2O_3 are studied using the GGA + U method based on density functional theory. The calculated bandgap and Ga 3d-state peak of β-...The electronic structures and optical properties of β-Ga_2O_3 and Si-and Sn-doped β-Ga_2O_3 are studied using the GGA + U method based on density functional theory. The calculated bandgap and Ga 3d-state peak of β-Ga_2O_3 are in good agreement with experimental results. Si-and Sn-doped β-Ga_2O_3 tend to form under O-poor conditions, and the formation energy of Si-doped β-Ga_2O_3 is larger than that of Sn-doped β-Ga_2O_3 because of the large bond length variation between Ga–O and Si–O. Si-and Sn-doped β-Ga_2O_3 have wider optical gaps than β-Ga_2O_3, due to the Burstein–Moss effect and the bandgap renormalization effect. Si-doped β-Ga_2O_3 shows better electron conductivity and a higher optical absorption edge than Sn-doped β-Ga_2O_3, so Si is more suitable as a dopant of n-type β-Ga_2O_3, which can be applied in deep-UV photoelectric devices.展开更多
Gallium oxide(Ga_2O_3) thin films were deposited on a-Al2O3(1120) substrates by pulsed laser deposition(PLD) with different oxygen pressures at 650?C. By reducing the oxygen pressure, mixed-phase Ga_2O_3 films with α...Gallium oxide(Ga_2O_3) thin films were deposited on a-Al2O3(1120) substrates by pulsed laser deposition(PLD) with different oxygen pressures at 650?C. By reducing the oxygen pressure, mixed-phase Ga_2O_3 films with α and β phases can be obtained, and on the basis of this, mixed-phase Ga_2O_3 thin film solar-blind photodetectors(SBPDs) were prepared.Comparing the responsivities of the mixed-phase Ga_2O_3 SBPDs and the single β-Ga_2O_3 SBPDs at a bias voltage of 25 V,it is found that the former has a maximum responsivity of approximately 12 A/W, which is approximately two orders of magnitude larger than that of the latter. This result shows that the mixed-phase structure of Ga_2O_3 thin films can be used to prepare high-responsivity SBPDs. Moreover, the cause of this phenomenon was investigated, which will provide a feasible way to improve the responsivity of Ga_2O_3 thin film SBPDs.展开更多
Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_...Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.展开更多
In this work, we prepared the β-Ga_2O_3@GaN nanowires(NWs) by oxidizing GaN NWs. High-quality hexagonal wurtzite GaN NWs were achieved and the conversion from GaN to β-Ga_2O_3 was confirmed by x-ray diffraction, Ram...In this work, we prepared the β-Ga_2O_3@GaN nanowires(NWs) by oxidizing GaN NWs. High-quality hexagonal wurtzite GaN NWs were achieved and the conversion from GaN to β-Ga_2O_3 was confirmed by x-ray diffraction, Raman spectroscopy and transmission electron microscopy. The effect of the oxidation temperature and time on the oxidation degree of GaN NWs was investigated systematically. The oxidation rate of GaN NWs was estimated at different temperatures.展开更多
In the semiconductor-based photocatalysts for overall water splitting, loading proper cocatalysts play a crucial role in enhancing the photocatalytic activity. In this work, we have chosen Ni_n/α-Ga_2O_3 as a model a...In the semiconductor-based photocatalysts for overall water splitting, loading proper cocatalysts play a crucial role in enhancing the photocatalytic activity. In this work, we have chosen Ni_n/α-Ga_2O_3 as a model and provided detailed density functional theory calculations to investigate the function of cocatalysts in hydrogen evolution reaction(HER). We have studied the formation and stability of Ni_n(n = 1–4) cluster on two stable surfaces of α-Ga_2O_3(001) and(012). In a Ni_n/α-Ga_2O_3 system, as the Ni 3d states well overlap with O and Ga states, the excited electrons transferred from Ga to Ni may participate in HER. We theoretically predict that introduction of Nincluster on(012) surface can elevate the Fermi level toward the conduction band, which is favorable for the occurrence of HER. Electrochemical computations are used to explore the mechanism of HER. It is found that, in most of Ni_n/α-Ga_2O_3 systems, the active sites of HER are on Ni_n clusters. Loading Ni_n clusters not only importantly reduces the Gibbs free energy of HER but also improves the reaction activity of surface O and Ga sites in HER. Our calculations reasonably explain the experimental observation on significant enhancement of activity for generating hydrogen after loading nickel oxide cocatalysts.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61521064,61522408,61574169,6 1334007,61474136,61574166)the Ministry of Science andTechnology of China(Nos.2016YFA0201803,2016YFA0203800,2017YFB0405603)+2 种基金the Key Research Program of Frontier Sciences of Chinese Academy of Sciences(Nos.QYZDB-SSWJSC048,QYZDY-SSW-JSC001)the Beijing Municipal Science and Technology Project(No.Z171100002017011)the Opening Project of the Key Laboratory of Microelectronic Devices&Integration Technology,Institute of Microelectronics of Chinese Academy of Sciences
文摘As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.
基金supported by the National Natural Science Foundation of China(Nos.61674130,61604137)
文摘Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor deposition(MOCVD) on an Fedoped semi-insulating(010) Ga_2O_3 substrate. The structure consisted of a 400 nm unintentionally doped(UID) Ga_2O_3 buffer layer and an 80 nm Si-doped channel layer. A high k HfO_2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at V_(gs) of 3 V. The off-state current was as low as 7.1 ×10^(-11) A/mm, and the drain current I_(ON)/I_(OFF) ratio reached 10~9. The transistors exhibited three-terminal off-state breakdown voltages of 450 and 550 V, corresponding to gate-to-drain spacing of 4 and 8 μm, respectively.
基金supported by the National Key R&D Program of China(No.2017YFB0404201)the Solid State Lighting and Energy-Saving Electronics Collaborative Innovation Center,PAPD,and the State Grid Shandong Electric Power Company
文摘Halide vapor phase epitaxy(HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc.HVPE is a non-organic chemical vapor deposition(CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga_2O_3, with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga_2O_3 substrates and for the fabrication of high power β-Ga_2O_3 devices.
基金the Financial support from the National key Research and Development Program of China(Nso.2018YFB0406502,2016YFB1102201)the National Natural Science Foundation of China(Grant No.51321091)+2 种基金the key Research and Development Program of Shandong Province(No.2018CXGC0410)the Young Scholars Program of Shandong University(No.2015WLJH36)the 111 Project 2.0(No.BP2018013)
文摘As a wide-bandgap semiconductor(WBG), β-Ga_2O_3 is expected to be applied to power electronics and solar blind UV photodetectors. In this review, defects in β-Ga_2O_3 single crystals were summarized, including dislocations, voids, twin, and small defects. Their effects on device performance were discussed. Dislocations and their surrounding regions can act as paths for the leakage current of SBD in single crystals. However, not all voids lead to leakage current. There's no strong evidence yet to show small defects affect the electrical properties. Doping impurity was definitely irrelated to the leakage current. Finally, the formation mechanism of the defects was analyzed. Most small defects were induced by mechanical damages. The screw dislocation originated from a subgrain boundary. The edge dislocation lying on a plane slightly tilted towards the(102) plane, the(101) being the possible slip plane. The voids defects like hollow nanopipes, PNPs, NSGs and line-shaped grooves may be caused by the condensation of excess oxygen vacancies, penetration of tiny bubbles or local meltback. The nucleation of twin lamellae occurred at the initial stage of "shoulder part" during the crystal growth. These results are helpful in controlling the occurrence of crystal defects and improving the device performance.
基金supported by the National Key R&D Program of China(No.2018YFB0406502)the National Natural Science Foundation of China(Nos.61734001,61521004)
文摘Monoclinic gallium oxide(Ga_2O_3) has been grown on(0001) sapphire(Al_2O_3) substrate by plasma-assisted molecular beam epitaxy(PA-MBE). The epitaxial relationship has been confirmed to be [010]( 2ˉ01) β-Ga_2O_3||[ 011ˉ0](0001)Al_2O_3 via in-situ reflection high energy electron diffraction(RHEED) monitoring and ex-situ X-ray diffraction(XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum(FWHM) of XRD ω-rocking curve of( 2ˉ01) plane and root mean square(RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C,respectively. Room temperature cathodoluminescence measurement shows an emission at ～417 nm, which is most likely originated from recombination of donor–acceptor pair(DAP).
基金funded by the following grants:Chinese Academy of Sciences president’s International Fellowship Initiative(Grant No.2018PE0033)National Natural Science Foundation of China(Grant No.51802327)+1 种基金Science and Technology Commission of Shanghai Municipality(No.18511110500)Pre-research Fund Key Project(No.6140922010601)
文摘The rapid development of bulk β-Ga_2O_3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap(～ 4.9 eV) and large breakdown electric field of about8 MV/cm. Low cost and high quality of large β-Ga_2O_3 single-crystal substrates can be attained by melting growth techniques widely used in the industry. In this paper, we first present an overview of the properties of β-Ga_2O_3 crystals in bulk form. We then describe the various methods for producing bulk β-Ga_2O_3 crystals and their applications. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.
基金Project supported by the Science and Technology Program of Guangdong Province,China(Grant No.2015B010112002)the Science and Technology Project of Guangzhou City,China(Grant No.201607010250)
文摘The electronic structures and optical properties of β-Ga_2O_3 and Si-and Sn-doped β-Ga_2O_3 are studied using the GGA + U method based on density functional theory. The calculated bandgap and Ga 3d-state peak of β-Ga_2O_3 are in good agreement with experimental results. Si-and Sn-doped β-Ga_2O_3 tend to form under O-poor conditions, and the formation energy of Si-doped β-Ga_2O_3 is larger than that of Sn-doped β-Ga_2O_3 because of the large bond length variation between Ga–O and Si–O. Si-and Sn-doped β-Ga_2O_3 have wider optical gaps than β-Ga_2O_3, due to the Burstein–Moss effect and the bandgap renormalization effect. Si-doped β-Ga_2O_3 shows better electron conductivity and a higher optical absorption edge than Sn-doped β-Ga_2O_3, so Si is more suitable as a dopant of n-type β-Ga_2O_3, which can be applied in deep-UV photoelectric devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51872187,51302174,11774241,and 61704111)the National Key Research and Development Program of China(Grant No.2017YFB0400304)+3 种基金the Natural Science Foundation of Guangdong Province,China(Grant Nos.2016A030313060 and 2017A030310524)the Project of Department of Education of Guangdong Province,China(Grant No.2014KTSCX110)the Fundamental Research Project of Shenzhen,China(Grant No.JCYJ20180206162132006)the Science and Technology Foundation of Shenzhen,China(Grant No.JCYJ2015-2018)
文摘Gallium oxide(Ga_2O_3) thin films were deposited on a-Al2O3(1120) substrates by pulsed laser deposition(PLD) with different oxygen pressures at 650?C. By reducing the oxygen pressure, mixed-phase Ga_2O_3 films with α and β phases can be obtained, and on the basis of this, mixed-phase Ga_2O_3 thin film solar-blind photodetectors(SBPDs) were prepared.Comparing the responsivities of the mixed-phase Ga_2O_3 SBPDs and the single β-Ga_2O_3 SBPDs at a bias voltage of 25 V,it is found that the former has a maximum responsivity of approximately 12 A/W, which is approximately two orders of magnitude larger than that of the latter. This result shows that the mixed-phase structure of Ga_2O_3 thin films can be used to prepare high-responsivity SBPDs. Moreover, the cause of this phenomenon was investigated, which will provide a feasible way to improve the responsivity of Ga_2O_3 thin film SBPDs.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51572033,51572241,61774019,61704153,and 11404029)the Fund of State Key Laboratory of IPOC(BUPT)+1 种基金the Open Fund of IPOC(BUPT)Beijing Municipal Commission of Science and Technology,China(Grant No.SX2018-04)
文摘Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.
基金Project supported by National Key Research and Development Program of China(Grant No.2017YFB0404201)State Key Research and Development Program of Jiangsu Province,China(Grant No.BE2018115)+1 种基金the Fund from the Solid-state Lighting&Energy-saving Electronics Collaborative Innovation Center,PAPDthe Fund from the State Grid Shandong Electric Power Company
文摘In this work, we prepared the β-Ga_2O_3@GaN nanowires(NWs) by oxidizing GaN NWs. High-quality hexagonal wurtzite GaN NWs were achieved and the conversion from GaN to β-Ga_2O_3 was confirmed by x-ray diffraction, Raman spectroscopy and transmission electron microscopy. The effect of the oxidation temperature and time on the oxidation degree of GaN NWs was investigated systematically. The oxidation rate of GaN NWs was estimated at different temperatures.
基金financially supported by the National Natural Science Foundation of China under Grants 21473183 and 21303079
文摘In the semiconductor-based photocatalysts for overall water splitting, loading proper cocatalysts play a crucial role in enhancing the photocatalytic activity. In this work, we have chosen Ni_n/α-Ga_2O_3 as a model and provided detailed density functional theory calculations to investigate the function of cocatalysts in hydrogen evolution reaction(HER). We have studied the formation and stability of Ni_n(n = 1–4) cluster on two stable surfaces of α-Ga_2O_3(001) and(012). In a Ni_n/α-Ga_2O_3 system, as the Ni 3d states well overlap with O and Ga states, the excited electrons transferred from Ga to Ni may participate in HER. We theoretically predict that introduction of Nincluster on(012) surface can elevate the Fermi level toward the conduction band, which is favorable for the occurrence of HER. Electrochemical computations are used to explore the mechanism of HER. It is found that, in most of Ni_n/α-Ga_2O_3 systems, the active sites of HER are on Ni_n clusters. Loading Ni_n clusters not only importantly reduces the Gibbs free energy of HER but also improves the reaction activity of surface O and Ga sites in HER. Our calculations reasonably explain the experimental observation on significant enhancement of activity for generating hydrogen after loading nickel oxide cocatalysts.
