In situ atomic-scale tracking of unusual interface reaction circulation and phase reversibility in(de)potassiated alloy-typed anode

Alloy-typed anode materials,endowed innately with high theoretical specific capacity,hold great promise as an alternative to intercalation-typed counterparts for alkali-ion batteries.Despite tremendous efforts devoted to addressing drastic volume change and severe pulverization issues of such anodes,the underlying mechanisms involving dynamic phase evolutions and reaction kinetics have not yet been fully comprehended.Herein,taking antimony(Sb)anode as a representative paradigm,its microscopic operating mechanisms down to the atomic scale during live(de)potassiation cycling are systematically unraveled using in situ transmission electron microscopy.Highly reversible phase transformations at single-particle level,that are Sb←→KSb_(2)←→KSb←→K_5Sb_(4)←→K_(3)Sb,were revealed during cycling.Meanwhile,multiple phase interfaces associated with different reaction kinetics coexisted and this phenomenon was properly elucidated in the context of density functional theory calculations.Impressively,previously unexplored unidirectional circulation of reaction interfaces within individual Sb particle is confirmed for both potassiation and depotassiation.Based on the empirical results,the surface diffusion-mediated potassiation-depotassiation pathways at single-particle level are suggested.This work affords new insights into energy storage mechanisms of Sb anode and valuable guidance for targeted optimization of alloy-typed anodes(not limited to Sb)toward advanced potassium-ion batteries.

Comparison of the interface reaction behaviors of CaO–V_(2)O_(5) and MnO_(2)–V_(2)O_(5) solid-state systems based on the diffusion couple method

The formation mechanism of calcium vanadate and manganese vanadate and the difference between calcium and manganese in the reaction with vanadium are basic issues in the calcification roasting and manganese roasting process with vanadium slag.In this work,CaO–V_(2)O_(5) and MnO_(2)–V_(2)O_(5) diffusion couples were prepared and roasted for different time periods to illustrate and compare the diffusion reaction mechanisms.Then,the changes in the diffusion product and diffusion coefficient were investigated and calculated based on scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (EDS) analysis.Results show that with the extension of the roasting time,the diffusion reaction gradually proceeds among the CaO–V_(2)O_(5) and MnO_(2)–V_(2)O_(5) diffusion couples.The regional boundaries of calcium and vanadium are easily identifiable for the CaO–V_(2)O_(5) diffusion couple.Meanwhile,for the MnO_(2)–V_(2)O_(5) diffusion couple,MnO_(2) gradually decomposes to form Mn_(2)O_(3),and vanadium diffuses into the interior of Mn_(2)O_(3).Only a part of vanadium combines with manganese to form the diffusion production layer.CaV_(2)O_(6) and MnV_(2)O_(6) are the interfacial reaction products of the CaO–V_(2)O_(5) and MnO_(2)–V_(2)O_(5) diffusion couples,respectively,whose thicknesses are 39.85 and 32.13μm when roasted for 16 h.After 16 h,both diffusion couples reach the reaction equilibrium due to the limitation of diffusion.The diffusion coefficient of the CaO–V_(2)O_(5) diffusion couple is higher than that of the MnO_(2)–V_(2)O_(5) diffusion couple for the same roasting time,and the diffusion reaction between vanadium and calcium is easier than that between vanadium and manganese.

Interface Reaction of SiO_2/Ta and Its Influence on Cu Diffusion

Ta/NiFe film is deposited on Si substrate precoated with SiO_2 by magnetron sputtering.SiO_2/Ta interface and Ta_5Si_3 standard sample are investigated by using X-ray photoelectron spectroscopy (XPS) and peak decomposition technique.The results show that there is a thermodynamically favorable reaction at the SiO_2/Ta interface:37Ta+15SiO_2=5Ta_5Si_3+6Ta_2O_5.The more stable products Ta_5Si_3 and Ta_2O_5 may be beneficial to stop the diffusion of Cu into SiO_2.

Interface reaction in aluminium matrix composite at laser welding

Interface reaction of SiC w/6061Al aluminium matrix composite subjected to laser welding was studied. It is pointed out that the main reason for bad weldability of the material is concerned with the interface reaction during the welding. Effects of welding parameters on interface reaction were also investigated. The results show that the interface bonding state can be improved by laser beam, and the main welding parameter affecting the strength of weld is laser output power. The smaller the output power, the lower the extent of interface reaction and the better the mechanical properties.

Influence of Si content on interface reaction of iron-based hot-dip aluminizing on Fe sheet

Based on the diffusion channel,the influence of Si content on the microstructure evolution of iron-based hot-dip Al-χSi coating was analyzed(χ=0,1.5 wt%,3.0 wt% and 7.0 wt%).The results show that the introduction of Si makes the reaction interface change from the lingual-tooth interface of hot-dip Al to the flat interface of hot-dip Al-Si.It also reduces the thickness of the alloy layer in the coating,especially the Fe_(2)Al_(5) layer.When the Si content is 1.5 wt%or 3.0 wt%,the diffusion channel crosses the conjugate line of the two-phase region(FeAl_(3)+liquid phase)into the FeAl_(3) single-phase region,and then moves to the region with higher Si content.Next,the diffusion channel cuts off the conjugate line of FeAl_(3)phase,τ_(1)/τ_(9) phase,and Fe_(2)Al_(5)phase,which promotes the form ofτ_(1)/τ_(9) phase.The formedτ_(1)/τ_(9) phase inhibits the diffusion between Fe and Al atoms.When the Si content is 7.0 wt%,the diffusion channel passes through the two-phase region(liquid phase+τ_(5))and enters theτ_(5) single-phase region.The form ofτ_(5) single-phase region has a strong inhibitory effect on the interatomic diffusion of Fe and Al,thereby reducing the thickness of the coating,especially the Fe_(2)Al_(5)layer.

Effect of Nb and alloying elements on interface reaction between high Nb-containing TiAl alloys and ZrO_2-based ceramic moulds

In the present study, Ti-45Al-(6, 7, 8)Nb(at%) and Ti-45Al-8Nb-0.5(Mn, Si, Y, B) alloys were prepared by arc melting and casting into Zr O2(Y2O3 stabilized) ceramic moulds to study the effect of alloying elements Nb and Mn, Si, Y, B on the interfacial reaction between casting Ti Al alloys and ceramic moulds by SEM, and the elements' distribution in the interface reaction layer by line scanning. The results showed that with an increase in Nb content, the interfacial reaction weakened and the thickness of the reaction layer decreased gradually. The interface reaction thickness of the alloys with Nb content of 6, 7, 8at% were 60, 34 and 26 μm, respectively. Clearly, the addition of 8at% Nb to Ti-45 Al is the best for the thickness of the reaction layer. The addition of Nb would form a Nb-rich film in the reaction layer, which could reduce the solubility of oxygen in the interface, and suppress further diffusion of oxygen to the matrix. If the same content of Mn, Si, Y, or B alloying elements were added respectively to Ti-45Al-8Nb, the thickness of the interface reaction layer from large to small was as follows: Mn>Si>Y>B. The interface reaction thickness increased after 0.5at% Mn added, had no obvious change after 0.5at% Si addition, and decreased after adding 0.5at% Y or B. The introduced elements, which formed a protective film or/and promoted the formation of a dense aluminum oxide layer, would be of benefit to the resistance of interfacial reaction.

Interface Reaction of Ta/NiFe and NiFe/Ta and the Dead Layer

The structures of Ta/Ni81Fe19 and Ni81Fe19/Ta are commonly used in magnetoresistance multilayers. It is found that the thickness of dead layer in Ta/Ni81Fe19/Ta was about 1.6±0.2nm. X-ray photoelectron spectroscopy (XPS) was used to study the interfaces of Ta/Ni81Fe19 and Ni81Fe19/Ta. The results show that there is a reaction at the two interfaces: 2Ta+Ni=NiTa2, which caused the thinning of the effective NiFe layer. Furthermore, this reaction could also explain the phenomenon that the dead layer thickness of spin valves multilayers prepared by MBE is thinner than those prepared by magnetron sputtering.

SiC Formation Through Interface Reaction between C_(60) and Si in Plasma Environment

The formation of SiC through the interface reaction between C60 and Si in a plasmaassisted chemical vapour deposition system （PACVD） is investigated with a C60 film previously deposited on Si wafers. The composition and structure of the deposited samples were characterized by micro-Raman spectroscopy and X-ray diffraction （XRD）. The results showed that SiC film was formed successfully in hydrogen plasma at a substrate temperature of 800℃ . The hydrogen atoms in plasma were found to enhance the production of SiC. Furthermore, the effects of the added CH4 on the formation of film were studied. Introduction of CH4 simultaneously with H2 at the beginning would suppress the formation of the initial layer of SiC due to a carbon-rich environment on the substrate, which would be disadvantageous to the further growth of the SiC film.

Synthesis of Silver Sulf ide Quantum Dots Via the Liquid–Liquid Interface Reaction in a Rotating Packed Bed Reactor

We developed the high-gravity coupled liquid-liquid interface reaction technique on the basis of the rotating packed bed(RPB)reactor for the continuous and ultrafast synthesis of silver sulfide(Ag2S)quantum dots(QDs)with near-infrared(NIR)luminescence.The formation of Ag2S QDs occurs at the interface of microdroplets,and the average size of Ag2S QDs was 4.5 nm with a narrow size distribution.Ag2S QDs can disperse well in various organic solvents and exhibit NIR luminescence with a peak wavelength at 1270 nm under 980-nm laser excitation.The mechanism of the process intensification was revealed by both the computational fluid dynamics simulation and fluorescence imaging,and the mechanism is attributed to the small and uniform droplet formation in the RPB reactor.This study provides a novel approach for the continuous and ultrafast synthesis of NIR Ag2S QDs for potential scale-up.

Interface reactions in film materials

Interface reaction (IR) is a frequently observed phenomenon in the study ofadvanced thin film materials. It is very important to study the reaction conditions at which IRhappens and then to suppress or make use of it, the necessary conditions, including boththermodynamical and dynamical conditions of IR were discussed in detail. IRs in various systems,including oxide/silicon, oxide/metal, metal/metal, metal/semiconductor andsemiconductor/semiconductor, were reviewed. Methods to suppress and make use of IR were alsointroduced.

Formation mechanism of interface reaction layer between microporous magnesia refractories and molten steel and its effect on steel cleanliness

The ceramic filter in continuous casting tundish can effectively improve the cleanliness of high-performance steel by regulating tundish flow field to promote the removal of inclusions and adsorbing or blocking fine inclusions in the molten steel into the mold.The interaction between microporous magnesia refractories used as tundish filter and molten interstitial-free(IF)steel at 1873 K was investigated to reveal the formation mechanism of their interface layer and its effect on steel cleanliness by laboratory research and thermodynamic calculations.The results show that the magnesium–aluminum spinel layer at the interface between the molten IF steel and the microporous magnesia refractories is formed mainly by the reaction of MgO in the refractory with the[Al]and[O]in the molten steel,significantly reducing the total O content,the size and amount of inclusions of the molten steel.In addition,the interparticle phases of microporous magnesia refractories at high temperature can adsorb Al_(2)O_(3) and TiO_(2) inclusions in the molten steel into interparticle channels of the refractories to form high melting point spinel,impeding the further penetration of the molten steel.As a result,the consecutive interface layer of high melting point spinel between microporous magnesia refractories and molten steel can improve the cleanliness of the molten steel by adsorbing inclusions in the molten steel and avoid the direct dissolution of refractories of the tundish ceramic filter immersed in the molten steel,increasing their service life.

Interfacial reaction between AZ91D magnesium alloy melt and mild steel under high temperature

The metallurgical quality control of magnesium(Mg)and Mg alloys in melting process is required to ensure a satisfied mechanical and corrosion performance,while the typical used steel crucible introduces impurities and interfacial interaction during melting process.Therefore,a systematic study about impurities diffusion and interfacial interaction between molten Mg and steel is necessary.In the present study,the interfacial reaction between molten AZ91D Mg alloy and mild steel during melting process was investigated with the melting temperatures of 700℃,750℃ and 800℃.The results show that Al(Fe,Mn)intermetallic layer is the intermetallic primarily formed at the interfaces of AZ91D melt and mild steel.Meanwhile,Al_(8)(Mn,Fe)5is indexed between Al(Fe,Mn)and AZ91D.AlFe_(3)C appears between the mild steel and Al(Fe,Mn)at 700℃ and 750℃,but absent at 800℃ due to the increased solubility of carbon in Mg matrix.It is found that the growth of the intermetallic layer is controlled by diffusion mechanism,and Al and Mn are the dominant diffusing species in the whole interfacial reaction process.By measuring the thickness of different layers,the growth constant was calculated.It increases from 1.89(±0.03)×10^(-12)m^(2)·s^(-1)at 700℃ to 3.05(±0.05)×10^(-12)m^(2)·s^(-1)at 750℃,and 5.18(±0.05)×10^(-12)m^(2)·s^(-1)at 800℃.Meanwhile,the content of Fe is linearly increased in AZ91D with the increase of holding time at 700℃ and 750℃,while it shows a significantly increment after holding for 8 h at 800℃,indicating holding temperature is more crucial to determine the Fe content of AZ91D than holding time.

Effect of C and Hf Contents on the Interface Reactions and Wettability between a Ni_3Al-Based Superalloy and Ceramic Mould Material

The influence of active elements C and Hf on the interface reactions and wettability between a Ni3Albased superalloy and the ceramic mould material was studied by using a sessile drop experiment, The microstructure of the alloy interface was investigated by scanning electron microscopy analysis and the phase identification was performed by X-ray diffraction analysis, The results show that interface reactions occur as C and Hf contents reach a critical value, The critical values for C and Hf to cause interface reactions are 0,12 wt% and 1,17 wt%, respectively, The reaction products contain HfO2 and 9Al2OH,Cr2O3, Adsorptions of Hf and interface reactions improve the wettability obviously,

Interface reaction of high-strength low-alloy steel with Al-43.4Zn-1.6Si(wt.%)metallic coating

The microstructure,elemental distribution,phase composition,and thickness of intermetallic layers between high-strength low-alloy steel(H420)/mild carbon steel(DC51)and Al–43.4Zn–1.6Si(wt.%)(galvalume,GL)alloy were comparatively investigated.The experimental results reveal that the interfacial reaction layer was composed of Fe2Al5,Fe4Al13,and Al8Fe2Si intermetallic compounds.Moreover,the growth curves of the Fe2Al5 and Fe4Al13 intermetallic layers fit the parabolic law well,and the total thickness of the intermetallic layers of H420+GL was almost the same as that of DC51+GL.However,the thickness of the Fe2Al5 layer in H420+GL was thinner than that in DC51+GL.In addition,first-principle calculations were performed to explore the effect of Mn on the growth of the Fe2Al5 intermetallic phase,and the results indicate that Mn substitution in Fe2Al5 removes electronic charge from the Al atoms,thus decreasing the thickness of the Fe2Al5 interface layer.

Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si (111) sample

The effects of the Pt diffusion barrier layer on the interface diffusion and reaction, crystallization, dielectric and ferroelectric properties of the PZT/Si(111) sample have been studied using XPS, AES and XRD techniques. The results indicate that the Pt diffusion barrier layer between the PZT layer and the Si substrate prohibits the formation of TiCx, TiSix and SiO2 species in the PZT layer. The Pt barrier layer also completly interrupts the diffusion of Si from the Si substrate into the PZT layer and impedes the diffusion of oxygen from air to the Si substrate greatly. Although the Pt layer can not prevent completely the diffusion and reaction between oxygen and silicon, it can prevent the formation of a stable SiO2 interface layer on the interface of PZT/Si. The Pt layer reacts with silicon to form PtSix species on the interface of Pt/Si, which can intensify the chemical binding strength between the Pt layer and the Si substrate. To play a good role as a diffusion barrier layer, the Pt barrier layer must be not thinner than 140 nm. The existence of the Pt layer not only promotes the crystallization of PZT layer to form a perovskite phase but also improves dielectric and ferroelectric performances of the PZT layer.

Development of Sb Microelectrode and In-situ pH Measurement of Electroless Nickel Reaction Interface

Sb microelectrodes were prepared by plating. The results of testing show that they have excellent stability, quick responding speed, high pH sensitivity (35～40 mV/pH) and long useful life in high temperature acidic electroless nickel (EN) bath. By using Sb microelectrode, the pH value in EN reaction interface was measured in situ . There exists the fluctuation of pH during EN plating, and the amplitude of fluctuation tends to decrease with plating time. The largest fluctuation amplitude can reach 1～2 pH value. The in situ pH measurement provides reliable experimental results for explaining the formation of layer structure of EN deposit.

Recent advances in elaborate interface regulation of BiVO_(4)photoanode for photoelectrochemical water splitting

Bismuth vanadate(BiVO_(4))is an excellent photoanode material for photoelectrochemical(PEC)water splitting system,possessing high theoretical photoelectrocatalytic conversion efficiency.However,the actual PEC activity and stability of BiVO_(4)are faced with great challenges due to factors such as severe charge recombination and slow water oxidation kinetics at the interface.Therefore,various interface regulation strategies have been adopted to optimize the BiVO_(4)photoanode.This review provides an in-depth analysis for the mechanism of interface regulation strategies from the perspective of factors affecting the PEC performance of BiVO_(4)photoanodes.These interface regulation strategies improve the PEC performance of BiVO_(4)photoanode by promoting charge separation and transfer,accelerating interfacial reaction kinetics,and enhancing stability.The research on the interface regulation strategies of BiVO_(4)photoanode is of great significance for promoting the development of PEC water splitting technology.At the same time,it also has inspiration for providing new ideas and methods for designing and preparing efficient and stable catalytic materials.

Reaction between Ti and boron nitride based investment shell molds used for casting titanium alloys

The aim of this paper was to study the reaction between a Ti-6Al-4V alloy and boron nitride based investment shell molds used for investment casting titanium. In BN based investment shell molds, the face coatings are made of pretreated hexagonal boron nitride （hBN） with a few yttria （Y2O3） and colloidal yttria as binder. The Ti-6Al-4V alloy was melted in a controlled atmosphere induction furnace with a segment water-cooled copper crucible. The cross-section of reaction interface between Ti alloys and shell mold was investigated by electron probe micro-analyzer （EPMA） and microhardness tester. The results show that the reaction is not serious, the thickness of the reacting layer is about 30-50 μm, and the thickness of α-case is about 180-200 pro. Moreover the α-case formation mechanism was also discussed.

Comparative study on the interface and mechanical properties of T700/Al and M40/Al composites

T700/Al and M40/Al composites were fabricated by squeeze casting technology, and their interface and mechanical properties were investigated comparatively. The results showed that both of the composites were dense, and the fibers were distributed uniformly in aluminum matrix. Aluminum carbide （Al4C3） was observed on the interface of the two carbon fiber-reinforced aluminum （Cf/Al） composites. There was little Al4C3 with a length of 300-500 nm and a width of 30-60 nm in the M40/Al composite, whereas there was a great deal of Al4C3 with a length of 200-400 nm and a width of 100-200 nm in the T700/Al composite, due to a higher graphitization of M40Cf than T700Cf. The M40/Al composite showed a much higher tensile strength than the TT00/Al composite, and it was related to interracial bonding between carbon fibers and aluminum matrices.

Interface Stability of the SiC Particles/Fe Matrix Composite System

The interface reaction between the SiC particles （ SiCp ） and Fe was stndicd during sintering the SiCp reinforced Fe matrix composites at 1423 K for 1 h. In the composite having 3wt% （weight ratio） SiCp （the 3SiCp/ Fe composite）, the interface reaction products of Fe3 Si, the carbon precipitates, and Fe3 C or pearlite were generated. Fe3 Si coustructs the bright matrix of the reaction zone in the original situation of the SiCp. The carbon precipitates are randondy embedded in the reaction zone. Fe3 C or pearlite exists at the grain boundaries of the Fe matrix. As increasing the SiCp concentration in the SiCp/ Fe composite, the inteusity of the interface reaction between SiCp and Fe iacreases. After the 10SiCp/ Fe composite （ having 10wt .% SiCp ） sintered at 1423 K for 1 h, all of SiCp are decomposed, and replaced by the reaction zone composed of Fe3 Si and the carbon precipitates. No Fe3 C or pearlite was genertaed during the reaction. The effects of the techniques of oxidizing of SiCp , coating SiCp by interaction with the Cr powder, and alloying the Fe matrix by adding the Cr element on the interface stability of the SiCp/ Fe composite system were also investigated, respectitely. The oxide membrane and the coating layer on SiCp can inhibit the interface reaction between SiCp and Fe by isolating SiCp from the Fe matrix during sintering. The interface reaction does not occur in the 3 SiCp/ Fe- 10 Cr composite but in the 3 SiCp/ Fe-5 Cr composite. In the SiCp/ Fe-Cr alloy composites, the interface reaction between SiCp and the Fe- Cr alloys is weaker than that between SiCp and Fe . The Cr element behaves as a diluent, it causes a redaction in the interface reaction, which is proportional to the amount of the element added.