Interface engineering yields efficient perovskite light-emitting diodes

Metal-halide perovskites(MHPs)have emerged as a new class of semiconductors used in perovskite solar cells(PSCs)[1-5],perovskite light-emitting diodes(PeLEDs)[6-12],photo/X-ray detectors[13-16],and memristors[17,18].Pe LEDs can emit different light with high purity[19,20].

Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light emitting diodes(QLEDs)are expected to become the next generation commercial display technology.This paper reviews the progress of QLED from physical mechanism,materials,to device engineering.The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.

Fabrication of High Color Rendering Index White Light Emitting Diodes from Gold Nanoclusters

We demonstrated gold nanoclusters as color tunable emissive light converters for the application of white light emitting diodes (WLEDs). A blue LED providing 460 nm to excite gold nanoclusters mixed with UV curable material generates broad bandwidth emission at the visible range. Increasing the amount of gold nanoclusters, the correlated color temperature of WLEDs tuned from cold white to warm white, and also results in the variation of color rendering index (CRI). The highest CRI in the experiment is 92.

Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)

The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.

Effects of Light-Emitting Diode (LED) Red and Blue Light on the Growth and Photosynthetic Characteristics of <i>Momordica charantia</i>L.

With andromonoecious Momordica charantia L. (bitter gourd) as material, three light qualities (50 μmol·m-2·s-1) including white LED light (WL), blue monochromatic light (B, 465 nm), and red monochromatic light (R, 650 nm) were carried out to investigate their effects on seed germination, physiological and biochemical parameters, sex differentiation and photosynthetic characteristics of bitter gourd. The results showed that compared to the WL treatment, the R treatment significantly promoted seed germination, seedling height elongation and soluble sugar content, the B treatment significantly increased seedling stem diameter, reducing sugar content and soluble protein content, the R and B treatments both significantly reduced sucrose content, but their POD activity showed no significant difference. Compared with the R treatment, the B treatment significantly increased the total female flower number and female flower nod ratio in 30 nods of main stems. The study of photosynthetic characteristics found that the R and B treatments could effectively increase the stomatal conductance (GS) of leaves, significantly improved the net photosynthetic rate (Pn) compared to the WL treatment, and the effect of the B treatment was better. Compared to the R and WL treatments, the B treatment increased the maximum photosynthetic rate (Pmax), apparent quantum efficiency (AQE) and light saturation point (LSP), and reduced the dark respiration rate (Rd) and light compensation point (LCP) of the leaves. Fit light response curves showed that the adaptability and utilization of weak light in bitter gourd were middle or below, but it showed higher adaptability and utilization of strong light. Thus, it suggests that Momordica charantia is a typical sun plan with lower Rd. In summary, it is concluded that blue light has a positive effect on the seed germination, seedling growth, sex differentiation and improving the photosynthetic performance, and this will lay the foundation for artificially regulating optimum photosynthesis using specific LEDs wavelength, and help to elucidate the relationship how light quality influences the sex differentiation of plant.

Controlled Growth of Large-Area Aligned Single-Crystalline Organic Nanoribbon Arrays for Transistors and Light-Emitting Diodes Driving

Organic field-effect transistors(OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm^2V^(-1)s^(-1), demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene(BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene(TIPSPEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 9 10 cm^2 wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed.By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm^2V^(-1)s^(-1)(average mobility 1.2 cm^2V^(-1)s^(-1)) and 3.0 cm^2V^(-1)s^(-1)(average mobility2.0 cm^2V^(-1)s^(-1)), respectively. They both have a high on/off ratio(I_(on)/I_(off))>10~9. The performance can well satisfy the requirements for light-emitting diodes driving.

LED光质影响微藻生长和代谢产物积累的研究进展

光质是影响微藻生理代谢的重要环境因子之一,它会影响微藻的生长发育、光合作用及代谢产物的积累等。发光二极管(light emitting diode,LED)作为一种新型冷光源,因具有能耗低、稳定性强、颜色多变、安全环保等优点而被广泛应用,且能按需求获得单色光与复合光谱,是一种非常适合于微藻培养的人工光源。已经有越来越多的研究者和企业关注LED光质在调节微藻生长和代谢产物积累方面的优势。该文对现有文献进行整理,重点综述了LED不同光质对微藻生长及代谢产物积累的影响。在LED单色光(红光、蓝光、绿光、黄光和橙光)中以红光和蓝光对不同类群微藻生物量和代谢产物积累的提升最为显著;而LED混合光,特别是红蓝光往往比单色光更能增加微藻生物量和代谢产物的积累。然而,微藻的光合作用、生长及代谢产物积累的最佳光质在不同类群和同一物种的不同藻株中通常有很大差异。未来,LED光质在微藻生产中的应用应该着重从光质影响微藻代谢产物积累的分子机制、开发新型高效LED光源、开发基于LED光质调节的高效光生物反应器、LED光质应用于微藻大规模培养等几个方面开展。

温差发电协同储能元件驱动LED车灯的响应特性

为实现低品位能源的高效利用,构建了基于温差发电的余热回收系统将余热转化为电能,用以驱动发光二极管(light emitting diodes,LED)车灯点亮.利用恒温加热炉模拟热源,探究了余热回收系统在不同阶段能量转化和驱动LED车灯的响应特性.在实际应用中,研究了储能元件独立驱动LED车灯时光输出特性的变化规律.结果表明:储能元件可以存储回收余热所转化的电能,并独立驱动LED车灯工作,还能缓冲温度变化引起的电压波动;锂电池的能量密度高,可储存更多电能,独立驱动LED车灯时冷启动速度快,点亮时间更长,但充满电所需时间也较长;超级电容冷启动速度慢,但充放电速度较快,有助于余热回收系统短时间工作时缓解LED车灯的驱动电压波动.

不同光质配比的LED光源补光对水稻机插秧苗生长发育的影响

以甬优12和扬两优6号作为试验材料,育秧期间采用纯蓝LED光源、纯红LED光源及红蓝光质各50%配比光源补光,以自然光下育秧为对照,研究不同红蓝光质配比LED光源补光对水稻机插秧苗生长发育的影响。结果表明,不同光质配比的LED光源补光对水稻秧苗生长有显著影响。蓝光能够抑制幼苗株高,提高充实度和根冠比,在培育壮苗方面发挥重要作用。红光处理下的水稻幼苗茎和叶鞘显著伸长,秧苗生长进程加快。此外,参试2个品种经红蓝光处理后的幼苗叶龄显著提高。试验结果探明了使用LED补光处理对水稻幼苗形态的影响,为调控水稻工厂化育秧的光环境提供了科学依据。

反向混合并联Micro LED/OLED显示器件的驱动IC控制

提出一种集成蓝光微发光二极管(Micro LED)和红绿光有机发光二极管(OLED),具有特殊子像素排列的新型无源驱动全彩显示器件.该器件无需巨量转移就可实现全彩化显示,且较传统全彩OLED及Micro LED,器件效率更高,寿命更长.另外,将蓝色与绿色子像素反向并联,可以减少电极走线,提高器件像素密度.针对该器件的特殊结构,设计一套全新的驱动方案,具体以现场可编程逻辑门阵列FPGA作为主控制器,利用驱动芯片提供稳定的电流点亮LED,实现器件的全彩显示.通过仿真测试进一步验证了该器件良好工作的可行性.

Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nanolayers

A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED.

Synthesis and luminescent properties of polycrystalline Gd_2(MoO_4)_3:Dy^(3+) for white light-emitting diodes

Polycrystalline Gd2(MoO4)3:Dy3+ phosphors have been synthesized by high temperature solid-state reaction method. The phosphors were characterized with X-ray diffractometer, thermogravimetric analysis and different scanning calorimeter, scanning electron microscopy, and photoluminescence spectrofluorimeter. Several peaks at 351, 389, 425, 452, and 472 nm appeared in photoluminescence excitation spectrum, which matched well with the emission of the ultraviolet (UV) and blue-light emitting diode (LED) chips. Upon excitation at 389 nm UV light, intense emissions centered at 484, 575 and 668 nm were attributed to the transitions of 4F9/2→6H15/2, 4F9/2→6H13/2 and 4F9/2→6H11/2 of Dy3+, respectively. The chromaticity coordinates and correlative color temperatures have been calculated and presented in the Commission International de I’Eclairage (CIE) diagrams. The results indicated that Gd1.9(MoO4)3:Dy0.13+ with CIE coordinates of (x=0.38, y=0.41) and the correlative color temperature of 4134 K is a potential candidate for white LEDs.

基于蓝光TADF材料的敏化白光OLED特性

白光有机发光二极管(WOLEDs)由于面光源、可柔性、轻薄、自发光等优势而广泛应用于显示和照明领域。目前,高效溶液处理的混合白光有机发光二极管很少被报道。本文选择蓝色热致延迟荧光材料DMAC-DPS作为传统橙色磷光材料PO-01-TB的敏化主体,制备了热活化敏化的杂化单发光层有机发光二极管白光器件,分析了器件能量传递机制。通过主客体掺杂浓度调控,实现了外部量子效率最高为8.00%、电流效率为22.32 cd/A、对应CIE坐标(0.405,0.497)及色温为4059 K的暖白光OLED器件,增加空穴阻挡层DPEPO有效地提高了器件的光谱稳定性,实现了更小的ΔCIE(0.017,0.016)。

A green-yellow emitting β-Sr_2SiO_4:Eu^(2+) phosphor for near ultraviolet chip white-light-emitting diode

Sr2SiO4：xEu^2＋ phosphors were synthesized through the solid-state reaction technique. The crystal phase of Sr2SiO4：xEu^2＋ phosphor manipulated by Eu^2＋ concentration was studied. The phase transited from β to α＇ in Sr2SiO4：xEu^2＋ phosphor with increasing europium concentration. The single β phase was formed as x≤005 and changed α＇ phase when x〉0.01. The emission spectrum of the β-Sr2SiO4：Eu^2＋ phosphor consisted of a green-yellow broadband peaking at around 540 nm and a blue band at 470 nm under near ultraviolet excitation. The white LEDs by combining near ultraviolet chips with β-Sr2SiO4：Eu^2＋ phosphors were fabricated. The luminous efficiency （15.7lm/W） was higher than α＇-Sr2SiO4：Eu^2＋ phosphor white LED.

Review of blue perovskite light emitting diodes with optimization strategies for perovskite film and device structure

Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red and green PeLEDs,blue PeLEDs have not been extensively investigated,which limits their commercial applications in the fields of luminance and full-color displays.In this review,blue-PeLED-related research is categorized by the composition of perovskite.The main challenges and corresponding optimization strategies for perovskite films are summarized.Next,the novel strategies for the design of device structures of blue PeLEDs are reviewed from the perspective of transport layers and interfacial layers.Accordingly,future directions for blue PeLEDs are discussed.This review can be a guideline for optimizing perovskite film and device structure of blue PeLEDs,thereby enhancing their development and application scope.

Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes

InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal--organic- vapor phase epitaxy （MOVPE）, which is challenge due to the lack of, itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes.

Potential red-emitting phosphor GdNbO_4:Eu^(3+),Bi^(3+) for near-UV white light emitting diodes

A red-emitting phosphor GdNbO4：Eu3＋,Bi3＋ was prepared by a high temperature solid-state reaction technique. The phosphor was characterized by X-ray diffraction （XRD）, particle size analyzer and fluorescence spectrometer. The single phase of GdNbO4：Eu3＋,Bi3＋ was obtained at 1150~C and the average particle diameter was about 2.30 μm. Excitation and emission spectra reveal that the phosphor can be ef- ficiently excited by ultraviolet （UV） light （394 nm） and emit the strong red light of 612 nm due to the Eu3＋ transition of SD0~TF2. The opti- mum content of Eu3＋ doped in the phosphor GdNbOn：Eu3＋ is 20mo1%. The phosphor Gdo.80NbO4：0.20Eu3＋,0.03Bi3＋ shows much stronger photoluminescence intensity and better chromaticity coordinates （x=0.642, 0.352） than GdNbO4：Eu3＋. It is confirmed that Gdo.80NbO4：0.20Eu3＋,0.03Bi3＋ is a potential candidate for near-UV chip-based white light emitting diodes.

Near-infrared lead chalcogenide quantum dots:Synthesis and applications in light emitting diodes

This paper reviews the recent progress in the synthesis of near-infrared(NIR) lead chalcogenide(PbX;PbX = PbS,PbSe, PbTe) quantum dots(QDs) and their applications in NIR QDs based light emitting diodes(NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance Pb X based NIR-QLEDs.

PEROVSKITE SEMICONDUCTOR OPTOELECTRONIC DEVICES Rational molecular passivation for high-performance perovskite light-emitting diodes

Solution-processed metal halide perovskites (MHPs) have received significant interest for cost-effective, high-performance optoelectronic devices. In addition to the great successes in photovoltaics, their excellent luminescence and charge transport properties also make them promising for light emitting diodes (LEDs). To achieve high-efficiency perovskite LEDs (PeLEDs), extensive efforts have been carried out to enhance radiative recombination rates by confining the electrons and holes. In addition to enhancing radiative recombination rates, it is equally important to decrease the non-radiative recombination for improving the device performance. Passivation of the defects could be an efficient way for reducing the non-radiative recombination.

Organic Light Emitting Diodes with Lithium Contained Alq3 as Electron Injection Layer

lNovel lithium doped tris 8 hydroxylquinoline aluminium(Alq3:Li) layer is deposited between emission layer and electron injection aluminium electrode as an electron injection assistant layer in different organic light emitting diodes(OLED) to lower the electron injection barrier. In these devices, Alq3 is used as emission layer, and a bilayer film of N,N bis (1 naphhyl) N,N diphenyl 1,1 biphenyle 4,4' diamine(NPB) and 4,4,4' tris(3 methyl phenylphenylamino) triphenylamine( m MTDATA) used as hole transport layer(HTL). The electroluminescent performance of devices with different thicknesses of Alq3∶Li shows that the insertion of the lithium doped Alq3 layer can reduce the turn on voltage by at least 2 volts, and the stability of devices with this lithium doped Alq3 layer is improved too. It can also change the efficiency of devices. Compared with an ultra thin lithium fluoride(LiF) layer, Alq3∶Li sheet gives similar effects but higher efficiency and can be much thicker and hence it is easier to control the deposition.