Flexible resistive random access memory(RRAM) has shown great potential in wearable electronics.With tunable multilevel resistance states,flexible memristors could be used to mimic the bio-synapses for constructing hi...Flexible resistive random access memory(RRAM) has shown great potential in wearable electronics.With tunable multilevel resistance states,flexible memristors could be used to mimic the bio-synapses for constructing high-efficient wearable neuromorphic computing system.However,the flexible substrate has intrinsic disadvantages including low-tempe rature tolerance and poor complementary metal-oxidesemiconductor(CMOS) compatibility,which limit the development of flexible electronics.The physical vapor deposition(PVD) fabrication process could prepare RRAM without requirement of further treatment,which greatly simplified preparation steps and reduced the production costs.On the other hand,forming process,as a common pre-programing operation in RRAM,increases the energy consumption and limits the application scenarios of RRAM.Here,a NiO-based forming-free RRAM with low set voltage was fabricated via full PVD technique.The flexible device exhibited reliable re sistive switching characteristics under flat state even compre s sive and tensile states(R=10 mm).The tunable multilevel resistance states(5 levels) could be obtained by controlling the compliance current.Besides,synaptic plasticities also were verified in this device.The flexible NiO-based RRAM shows great potential in wearable forming-free multibit memo ry and neuromorphic computing electronics.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61704030 and 61522404)the Shanghai Rising-Star Program(No.19QA1400600)+1 种基金the Program of Shanghai Subject Chief Scientist(No.18XD1402800)the Support Plans for the Youth Top-Notch Talents of China。
文摘Flexible resistive random access memory(RRAM) has shown great potential in wearable electronics.With tunable multilevel resistance states,flexible memristors could be used to mimic the bio-synapses for constructing high-efficient wearable neuromorphic computing system.However,the flexible substrate has intrinsic disadvantages including low-tempe rature tolerance and poor complementary metal-oxidesemiconductor(CMOS) compatibility,which limit the development of flexible electronics.The physical vapor deposition(PVD) fabrication process could prepare RRAM without requirement of further treatment,which greatly simplified preparation steps and reduced the production costs.On the other hand,forming process,as a common pre-programing operation in RRAM,increases the energy consumption and limits the application scenarios of RRAM.Here,a NiO-based forming-free RRAM with low set voltage was fabricated via full PVD technique.The flexible device exhibited reliable re sistive switching characteristics under flat state even compre s sive and tensile states(R=10 mm).The tunable multilevel resistance states(5 levels) could be obtained by controlling the compliance current.Besides,synaptic plasticities also were verified in this device.The flexible NiO-based RRAM shows great potential in wearable forming-free multibit memo ry and neuromorphic computing electronics.
