Multiframe-integrated, in-sensor computing using persistent photoconductivity

The utilization of processing capabilities within the detector holds significant promise in addressing energy consumption and latency challenges. Especially in the context of dynamic motion recognition tasks, where substantial data transfers are necessitated by the generation of extensive information and the need for frame-by-frame analysis. Herein, we present a novel approach for dynamic motion recognition, leveraging a spatial-temporal in-sensor computing system rooted in multiframe integration by employing photodetector. Our approach introduced a retinomorphic MoS_(2) photodetector device for motion detection and analysis. The device enables the generation of informative final states, nonlinearly embedding both past and present frames. Subsequent multiply-accumulate (MAC) calculations are efficiently performed as the classifier. When evaluating our devices for target detection and direction classification, we achieved an impressive recognition accuracy of 93.5%. By eliminating the need for frame-by-frame analysis, our system not only achieves high precision but also facilitates energy-efficient in-sensor computing.

Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger

Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe challenges.In this study,PCSSs with various structures were prepared on 4-inch diameter,500μm thick high-purity semi-insulating 4H-SiC substrates and their on-state resistance and damage mechanisms were investigated.It was found that the PCSS of an Au/TiW/Ni electrode system annealed at 950℃had a minimum on-state resistance of 6.0Ωat 1 kV bias voltage with a 532 nm and 170 mJ pulsed laser by backside illumination single trigger.The backside illumination single trigger could reduce on-state resistance and alleviate the damage of PCSS compared to the frontside trigger when the diameter of the laser spot was larger than the channel length of PCSS.For the 200 s trigger test by a 10 Hz laser,the black branch-like ablation on Au/TiW/Ni PCSS was mainly caused by thermal stress owing to hot carriers.Replacing metal Ni with boron gallium co-doped zinc oxide(BGZO)thin films annealed at 400℃,black branch-like ablation was alleviated while concentric arc damage was obvious at the anode.The major causes of concentric arc are both pulsed laser diffraction and thermal effect.

Peculiar Photoconduction in Semi-Insulating GaAs Photoconductive Switch Triggered by 1064nm Laser Pulse

The peculiar photoconduction in semi insulating GaAs photoconductive switch being triggered by 1064nm laser pulse is reported.The gap between two electrodes of the switch is 4mm.When it is triggered by laser pulse with energy of 0 8mJ and the pulse width of 5ns,and operated at biased electric field of 2 0 and 6 0kV/cm,both linear and nonlinear modes of the switch are observed respectively.Whereas the biased electric field adds to 9 5kV/cm,and the triggered laser is in range of 0 5～1 0mJ,the peculiar performed characteristic is observed:the switch gives a linear waveform firstly,and then after a delay time of about 20～250ns,it outputs a nonlinear waveform again.The physical mechanism of this specific phenomenon is associated with the anti site defects of semi insulating GaAs and two step single photon absorption.The delay time between linear waveform and nonlinear waveform is calculated,and the result matches the experiments.

Ultra-Wideband Electromagnetic Radiation from GaAs Photoconductive Switches

The experiment results of ultrawide band electromagnetic radiation with DC biased GaAs photoconductive semiconductor switch combining double ridge horn antenna triggered by high repeat frequency femto-second laser pulse are reported.The GaAs switches are insulated by solid multi-layer transparent dielectrics and the distance of two electrodes is 3mm.The electrode material of the switch is ohmic contact through alloy technics with definite proportion of Au/Ge/Ni.This switch and double ridge horn antenna are integrated and the receive antenna is connected with the test instrument.From receiving antenna,ultra fast electrical pulse of 200ps rise time and 500ps pulse width is obtained,the repetition rate of the pulse is about 82MHz and the frequency spectrum is in the range of 4.7MHz～14GHz.The radiation characteristic of the ultrafast electrical pulse is analyzed.

Delayed-Dipole Domain Mode of Semi-Insulating GaAs Photoconductive Semiconductor Switches

A mode for the periodicity and weakening surge in semi-insulating GaAs photoconductive semiconductor switches is proposed based on the transferred-electron effect. It is shown that the periodicity and weakening surge is caused by the interaction between the self-excitation of the resonant circuit and transferred electron oscillation of the switch. The bias electric field （larger than Gunn threshold） across the switch is modulated by the AC elec-tric field,when the instantaneous bias electric field E is swinging below Gunn electric field threshold ET but grea-ter than the sustaining field Es （the minimum electric field required to support the domain） at the time of the do-main reaching the anode, and then the delayed-dipole domain mode of switch is obtained. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length prod-uct of 10^12 cm^-2,and the semi-insulating GaAs photoconductive semiconductor switch is essentially a type of pho-ton-activated charge domain device.

Optically Activated Charge Domain Model for High-Gain GaAs Photoconductive Switches

A model for theoretical analysis of nonlinear (or high gain) mode of photoconductive semiconductor switches (PCSS's) is proposed.The switching transition of high gain PCSS's can be described with an optically activated charge domain. The switching characteristics including rise time,delay and their relationship to electric field strength,optical trigger energies are discussed.The formation and radiation transit,accumulation of the charge domain are related with the triggering and sustaining phases of PCSS's,respectively.The results of the mathematical model on this mechanism agree with experimental results.

Transit Properties of High Power Ultra\|Fast Photoconductive Semiconductor Switch

Experiments of a GaAs ultra\|fast Photo\|Conductive Semiconductor Switch (PCSS) are reported. Both the linear and nonlinear modes were observed when triggered by the μJ nano\|second laser. The peak current could be as high as 560A. The rise time of the current pulse responses is less than 200ps when triggered with 76MHz femto\|second laser.

Transient Characteristics of a Nonlinear GaAs Photoconductive Semiconductor Switch

The transient resistance,voltage,and power of a nonlinear GaAs photoconductive semiconductor switch （PCSS） are presented by the finite difference formula to deal with the experiment data, based on the conversation of energy in the switch circuit. This method resolves the problem of directly measuring the transient characteristics of PCSS in nonlinear mode. The curve of transient voltage shows that the average electric field of PCSS in the lock-on period is always higher than the Gunn threshold,and increases monotonically. By comparing the transient power curves of the PCSS and the electrical source,it is demonstrated directly that the power shortage leads to the PCSS from the lock-on state into the selfturnoff state,so a controllable turnoff of the PCSS in lock-on by changing the distribution of the circuit power is predicted.

Light-Induced Changes in a-Si∶H Films Studied by Transient Photoconductivity

Light induced changes in a-Si∶H films are investigated by transient photoconductivity.The transient photoconductivity decay data can neither be fit well by common power-law for transient photocurrent in amorphous semiconductors,nor by stretched exponential rule for transient decay from the steady state in photoconductivity.Instead,the data are fit fairly well with a sum of two exponential functions.The results show that the long time decay is governed by deep traps rather than band tail states,and two different traps locating separately at 0.52 and 0.59eV below E _c are responsible for the two exponential functions.They are designated as negatively charged dangling bond D - centers.The light-induced changes in photoconductivity are attributed mainly to the decrease in electron lifetime caused by the increase of recombination centers after light soaking.

Investigation of GaAs Photoconductive Switch Irradiated by 1553nm Laser Pulse

Gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS's) with a 1.55mm gap spacing trigged by 1553nm femtosecond fiber laser pulse is presented.The switches are biased with 3.33～10.3kV/cm and irradiated by femtosecond fiber laser operated at a wavelength of 1553nm with pulse width of 200fs and pulse energy of 0.2nJ.The experiments show that,even if the semi-insulating GaAs photoconductive switch operates under the electrical field of 10.3kV/cm,it will be still linear response,and a clear corresponding output electric pulse with the peak voltage of 0.8mV is captured.From the weak photoconductivity on laser intensity,photoabsorption mediated by EL2 deep level defects is suggested,as the primary process for the photoconductivity.

Transition of photoconductive and photovoltaic operation modes in amorphous Ga_2O_3-based solar-blind detectors tuned by oxygen vacancies

We report on the transition of photovoltaic and photoconductive operation modes of the amorphous Ga_2O_3-based solar-blind photodetectors in metal–semiconductor–metal(MSM) configurations. The conversion from Ohmic to Schottky contacts at Ti/Ga_2O_3 interface is realized by tuning the conductivity of amorphous Ga_2O_3 films with delicate control of oxygen flux in the sputtering process. The abundant donor-like oxygen vacancies distributed near the Ti/Ga_2O_3 interface fascinate the tunneling process across the barrier and result in the formation of Ohmic contacts. As a consequence, the serious sub-gap absorption and persistent photoconductivity(PPC) effect degrades the performance of the photoconductive detectors. In contrast, the photovoltaic device with a Schottky contact exhibits an ultra-low dark current less than 1 pA,a high detectivity of 9.82×10^(12) cm·Hz^(1/2)·W^(-1), a fast response time of 243.9 μs, and a high ultraviolet C(UVC)-toultraviolet A(UVA) rejection ratio of 103. The promoting performance is attributed primarily to the reduction of the subgap states and the resultant suppression of PPC effect. With simple architecture, low fabrication cost, and easy fusion with modern high-speed integrated circuitry, these results provide a cost-effective way to realize high performance solar-blind photodetectors towards versatile practical applications.

Thermal coupled photoconductivity as a tool to understand the photothermal catalytic reduction of CO2

Photocatalysis shows great promise in the field of solar energy conversion.One of the reasons for this is because it promotes the development of multi-field-coupled catalysis.In order to explore the principles of multi-field-coupled catalytic reactions,an in situ multi-field-coupled characterization technique is required.In this study,we obtained hydrogenated ST-01 TiO2 and observed enhanced catalytic activity by thermal coupled photocatalysis.In situ photoconductivity was employed to understand the activity enhancement.The effects of the reaction temperature,reaction atmosphere,and oxygen vacancy(Ov)on the photoconductivity of TiO2 were studied.After coupling thermal into photoconductivity measurement,highly active Ov-TiO2 displayed rapid decay of photoconductivity in a CO2 atmosphere and slow decay of photoconductivity in a N2 atmosphere.These phenomena revealed that photothermal coupling assisted the detrapping of electrons at the Ov surface and promoted electron transfer to CO2,which clearly explained the high photothermal catalytic activity of Ov-TiO2.This study demonstrated that photoconductivity is a useful tool to help understand photothermal catalytic phenomena.

Photoconductive semiconductor switch-based triggering with 1 ns jitter for trigatron

Synchronization for multiple-pulse at nanosecond range shows a great value on the power multiplication and synchronous electric fieldsapplications. Nanosecond or sub-ns jitter synchronization is essential for the improved working efficiency of the large amounts of pulse modulesand accurate requirements for the power coherent combining applications. This paper presents a trigger generator based on a laser diodetriggered GaAs photoconductive semiconductor switch (PCSS) with low jitter and compact size characteristics. It avoids the high currentsthat are harmful to high-gain mode PCSSs. In the trigger circuit, a 200 pF capacitor is charged by a microsecond-scale 18 kV pulse and thendischarged via the high-gain mode GaAs PCSS to trigger the high-power trigatron switch. When triggered by the ~10 ns pulse generated by thePCSS, the DC-charged trigatron can operate in the 20e35 kV range with 10 ns rise time and 1 ns delay-time jitter.

Conductive MOFs with Photophysical Properties:Applications and Thin-Film Fabrication

Metal-organic frameworks(MOFs)are a class of hybrid materials with many promising applications.In recent years,lots of investigations have been oriented toward applications of MOFs in electronic and photoelectronic devices.While many high-quality reviews have focused on synthesis and mechanisms of electrically conductive MOFs,few of them focus on their photophysical properties.Herein,we provide an in-depth review on photoconductive and photoluminescent properties of conductive MOFs together with their corresponding applications in solar cells,luminescent sensing,light emitting,and so forth.For integration of MOFs with practical devices,recent advances in fabrication of photoactive MOF thin films are also summarized.

Negative photoconductivity in low-dimensional materials

In recent years,low-dimensional materials have received extensive attention in the field of electronics and optoelectronics.Among them,photoelectric devices based on photoconductive effect in low-dimensional materials have a broad development space.In contrast to positive photoconductivity,negative photoconductivity(NPC)refers to a phenomenon that the conductivity decreases under illumination.It has novel application prospects in the field of optoelectronics,memory,and gas detection,etc.In this paper,we review reports about the NPC effect in low-dimensional materials and systematically summarize the mechanisms to form the NPC effect in existing low-dimensional materials.

Bifacial Silicon Solar Cell Steady Photoconductivity under Constant Magnetic Field and Junction Recombination Velocity Effects

The paper reported a theoretical study on the photoconductivity of a bifacial silicon solar cell under polychromatic illumination and a constant magnetic field effect. By use of the continuity equation in the base of the solar cell maintained in a constant temperature at 300 K, an expression of the excess minority carriers’ density was determined according to the applied magnetic field, the base depth and the junction recombination velocity. From the expression of the minority carriers’ density, the photoconductivity of the solar cell was deduced and which allowed us to predict some recombination phenomena, the use of such solar cell in optoelectronics. The profile of the photoconductivity also permitted us to utilize a linear model in order to determine an electrical capacitance that varied with magnetic field.

Ultrafast Carrier Dynamics and Terahertz Photoconductivity of Mixed-Cation and Lead Mixed-Halide Hybrid Perovskites

Using time-dependent terahertz spectroscopy, we investigate the role of mixed-cation and mixed-halide on the ultrafast photoconductivity dynamics of two different methylammonium(MA) lead-iodide perovskite thin films. It is found that the dynamics of conductivity after photoexcitation reveals significant correlation on the microscopy crystalline features of the samples. Our results show that mixed-cation and lead mixed-halide affect the charge carrier dynamics of the lead-iodide perovskites. In the(5-AVA)_(0.05)(MA)_(0.95) PbI_(2.95) Cl_(0.05)/spiro thin film, we observe a much weaker saturation trend of the initial photoconductivity with high excitation fluence, which is attributed to the combined effect of sequential charge carrier generation, transfer, cooling and polaron formation.

Terahertz radiation of a butterfly-shaped photoconductive antenna(invited)

The terahertz(THz) far-field radiation properties of a butterfly-shaped photoconductive antenna(PCA) were experimentally studied using a home-built THz time-domain spectroscopy(THz-TDS) setup.To distinguish the contribution of in-gap photocurrent and antenna structure to far-field radiation,polarization-dependent THz field was measured and quantified as the illuminating laser beam moved along the bias field within the gap region of electrodes. The result suggests that, although the far-field THz radiation originates from the in-gap photocurrent, the antenna structure of butterfly-shaped PCA dominates the overall THz radiation. In addition, to explore the impact of photoconductive material,radiation properties of butterfly-shaped PCAs fabricated on both low-temperature-grown GaAs(LT-GaAs) and semi-insulating GaAs(Si-GaAs) were characterized and compared. Consistent with previous experiments, it is observed that while Si-GaAs-based PCA can emit higher THz field than LT-GaAs-based PCA at low laser power, it would saturate more severely as laser power increased and eventually be surpassed by LT-GaAs-based PCA. Beyond that, it is found the severe saturation effect of Si-GaAs was due to the longer carrier lifetime and higher carrier mobility, which was confirmed by the numerical simulation.

Synthesis and Photoconductivity of Nanosized Phthalocyanine

Functional phthalocyanine （Pc） compounds of H2Pc, TiOPc, FePc and CIAIPc were synthesized with a yield of 46.7%, 91.2%, 37.4% and 34.0%, respectively. Nanosized TiOPc was synthesized via a one-step sol-gel method and effects of surfactant doses, nucleation temperature on TiOPc particle size and photoconductivity were investigated. When re（PEG）： m（TiOPc） was 0.1 and nucleation temperature was 0℃, the as-obtained TiOPc had the smallest particle size and largest specific surface area, which were 60 nm and 83m^2/g, respectively. TiOPc synthesized under these conditions also exhibits excellent photoconductivity with charging potential V0, dark decay speed Rd and energy for half-discharging of potential E1/2 being 1160 V, 30 V/s and 0.6 1x.s, respectively.

Ligand Exchange of Colloidal ZnO Nanocrystals from the High Temperature and Nonaqueous Approach

Colloidal zinc oxide(ZnO) nanocrystals generated from the high temperature and nonaqueous approache are attractive for use in solution-processed electrical and optoelectronic devices. However, the asprepared colloidal ZnO nanocrystals by this approach are generally capped by ligands with long alkyl-chains,which is disadvantage for solution-processed devices due to hindering charge transport. Here we demonstrate an effective ligand exchange process for the colloidal ZnO nanocrystals from the high temperature and nonaqueous approach by using n-butylamine. The ligand exchange process was carefully characterized. The thin films based on colloidal ZnO nanocrystals after ligand exchange exhibited dramatically enhanced UV photoconductivity.