A new method for reducing the substrate rated losses of integrated spiral inductors is presented.The method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the S...A new method for reducing the substrate rated losses of integrated spiral inductors is presented.The method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the Si substrate. The substrate pn junction can be realized by using the standard silicon technologies without any additional processing steps.Integrated inductors on silicon are designed and fabricated. S parameters of the inductor based equivalent circuit are investigated and the inductor parameters are calculated.The impacts of the substrate pn junction isolation on the inductor quality factor are studied.The experimental results show that substrate pn junction isolation in certain depth has achieved a significant improvement.At 3GHz,the substrate pn junction isolation increases the inductor quality factor by 40%.展开更多
Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully...Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward.Several approaches have been proposed and demonstrated to address this issue.In this paper,a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented.Representative device demonstrations,including ultra-narrow linewidthⅢ-Ⅴ/Si lasers,fully integratedⅢ-Ⅴ/Si/Si3N4 lasers,high-channel count mode locked quantum dot(QD)lasers,and high gain QD amplifiers will be covered.展开更多
文摘A new method for reducing the substrate rated losses of integrated spiral inductors is presented.The method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the Si substrate. The substrate pn junction can be realized by using the standard silicon technologies without any additional processing steps.Integrated inductors on silicon are designed and fabricated. S parameters of the inductor based equivalent circuit are investigated and the inductor parameters are calculated.The impacts of the substrate pn junction isolation on the inductor quality factor are studied.The experimental results show that substrate pn junction isolation in certain depth has achieved a significant improvement.At 3GHz,the substrate pn junction isolation increases the inductor quality factor by 40%.
文摘Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward.Several approaches have been proposed and demonstrated to address this issue.In this paper,a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented.Representative device demonstrations,including ultra-narrow linewidthⅢ-Ⅴ/Si lasers,fully integratedⅢ-Ⅴ/Si/Si3N4 lasers,high-channel count mode locked quantum dot(QD)lasers,and high gain QD amplifiers will be covered.
