To study the effect of different deposition temperatures on the optical properties of porous SiC films,single crystal Si was used as the substrate,a layer of anodic aluminum oxide(AAO)film was transferred on the Si su...To study the effect of different deposition temperatures on the optical properties of porous SiC films,single crystal Si was used as the substrate,a layer of anodic aluminum oxide(AAO)film was transferred on the Si substrate by chemical method,and then a layer of SiC was deposited on anodic aluminum oxide(AAO)template to prepare porous fluorescent SiC film by magnetron sputtering.The deposition temperature was ranged from 373 to 873 K.The thickness of the porous SiC film coated on the AAO surface was around 283 nm.It is found that the porous SiC with the deposition temperature of 873 K has the strongest photoluminescence(PL)intensity excited by 375 nm laser.The time-resolved PL spectra prove that the PL is mainly from intrinsic light emitting of SiC.With the optimized process,porous amorphous SiC film may have potential applications in the field of warm white LEDs.展开更多
3C-SiC films have been deposited on Si （111） substrates by the low-pressure vertical chemical vapor deposition （LPVCVD） with gas mixtures of SiH4, Calls and H2. The growth mechanism of SiC films can be obtained th...3C-SiC films have been deposited on Si （111） substrates by the low-pressure vertical chemical vapor deposition （LPVCVD） with gas mixtures of SiH4, Calls and H2. The growth mechanism of SiC films can be obtained through the observations using field emission scanning electron microscope （FESEM）. It is found that the growth process varies from surface control to diffusion control when the deposition temperature increases from 1270 to 1350℃. The X-ray diffraction （XRD） patterns show that the SiC films have good crystallinity and strong preferred orientation.The results of the high resolution transmission electron microscopy （HRTEM） image and the transmission electron diffraction （TED） pattern indicate a peculiar superlattice structure of the film. The values of the binding energy in the high resolution X-ray photoelectron spectra （XPS） further confirm the formation of SiC.展开更多
CH3SiCl3 （MTS）-H2-Ar system has been applied to prepare SiC film with chemical vapor deposition （CVD） method in this paper. For three facets of SiC film, some significant influence on growth rate, surface roughnes...CH3SiCl3 （MTS）-H2-Ar system has been applied to prepare SiC film with chemical vapor deposition （CVD） method in this paper. For three facets of SiC film, some significant influence on growth rate, surface roughness, thickness and relative density brought by MTS consistency has been mainly discussed with kinetic monte carlo （KMC） method. The simulation results show that there is a certain scale for mol ratio of H2 to MTS （H2/MTS） with different deposition temperature. When MTS consistency increases, growth rate and surface roughness of three facets all increase, which manifests approximate linearity relationship. Thickness of three facets also increases while increasing trend of three facets thickness is different obviously. Although relative density of three facets all increases, increasing trend shows a little difference with MTS consistency increasing.展开更多
Nanocrystalline （nc） 3C-SiC films on the Si substrate were prepared by the helicon wave plasma enhanced chemical vapor deposition （HW-PECVD） technique. With the SiH4-CH4 gas flow ratio changing, the films exhibit ...Nanocrystalline （nc） 3C-SiC films on the Si substrate were prepared by the helicon wave plasma enhanced chemical vapor deposition （HW-PECVD） technique. With the SiH4-CH4 gas flow ratio changing, the films exhibit different photoluminescence （PL） characteristics. Under the stoichiometric condition, the PL peak redshift from 470 nm to 515 nm is detected with the increase of excitation wavelength, which can be attributed to the quantum confinement effect radiation of 3C-SiC nanocrystals of different sizes. However, the appearance of an additional PL band at 436 nm in Si-rich film might be sourced back to the excess of Si defect centers in it. This is also the case for C-rich film for its PL band lying at 570 nm. The results above quoted indicate an important influence of gas flow ratio on the PL properties of the SiC films providing an effective guidance for analyzing the luminescence mechanism and exploring the high-efficiency light emission of the SiC films.展开更多
The ion beam mixing prepared SiC films on stainless steel substrates were irradiated by hydrogen ion beam with an energy of 5 keV to a dose of 1 x 10(18) ions/cm(2). AES and XPS were used for the characterization of c...The ion beam mixing prepared SiC films on stainless steel substrates were irradiated by hydrogen ion beam with an energy of 5 keV to a dose of 1 x 10(18) ions/cm(2). AES and XPS were used for the characterization of chemical bonding states of C and Si elements in SiC films as well as contamination oxygen before and after hydrogen ion irradiation in order to study the effect of hydrogen ion irradiation on SiC films and to understand oxygen behaviors in the SiC films prepared with ion beam mixing. The results shou, that contamination oxygen can react with silicon to form silicon oxides, and more oxygen entered into the films during hydrogen ion irradiation. In addition, oxygen also reacts with carbon related hydrogen to form species including carbon, hydrogen and oxygen.展开更多
Titanium dioxide(TiO2) films were prepared by cone - jet mode electrospraying a titanium ethoxideprecursor solution onto a silicon substrate.The effects of spraying time,substrate temperature and aging on thesurface m...Titanium dioxide(TiO2) films were prepared by cone - jet mode electrospraying a titanium ethoxideprecursor solution onto a silicon substrate.The effects of spraying time,substrate temperature and aging on thesurface morphology of the films prepared were studied.Thin films obtained after spraying for 600 s were aged atroom temperature to form a porous TiO2 network with pores in the size range of 100 - 500 nm.Thicker filmswere prepared by spraying for 3 000 s,but these cracked on drying although it can be concluded that films pre-pared using a higher substrate temperature were denser.By this method,SiC coating was also prepared on anAl2O3 substrate using polysilane as a precursor.The result implies the potential of an industrial production ofdye sensitized solar cells by electrospraying technique.展开更多
The point of zero charge(PZC) of SiC nanoparticles was determined by means of standard potentiometric titration method, while the influences of the main technological parameters on the microstructure of electrodeposit...The point of zero charge(PZC) of SiC nanoparticles was determined by means of standard potentiometric titration method, while the influences of the main technological parameters on the microstructure of electrodeposited Ni-SiC composite film were studied and optimized. The results show that high bath pH value favors SiC nanoparticles negatively charged and high bath temperature promotes them positively charged. Under the experimental conditions, sodium dodecyl-glycol is proven to be an effective surface modification anionic surfactant for SiC nanoparticles. The results also show that the optimized Ni-SiC composite film is composed of the nanoparticles with the average grain size in the nanometer range (100 nm), and SiC nanoparticles disperse into the nickel matrix uniformly.展开更多
SiC thin-films were prepared by RF-magnetron sputtering technique(RMS) with the target of single crystalline SiC and then annealed. The surface morphology of thin-films was characterized by AFM. The result shows that ...SiC thin-films were prepared by RF-magnetron sputtering technique(RMS) with the target of single crystalline SiC and then annealed. The surface morphology of thin-films was characterized by AFM. The result shows that the surface of the thin-films is smooth and compact; XRD analysis reveals that the thin-films are amorphous. The thickness, square-resistance and curves of resistance—temperature were measured. The results show that the curves of lnR versus 1/kT both before and after annealing satisfy the expression of lnR∝△W/kT, where ?W is electron excitation energy in the range of 0.014 2-0.018 5 eV, and it has a trend of increasing when the temperature is increased. After synthetical analysis we get the conclusion that the electronic mechanism of the thin-films is short distance transition between the localized states in the temperature range of 25-250 ℃. The resistivity is in the range of 2.4×10-3-4.4×10-3 Ω·cm and it has the same trend as electron excitation energy when annealing temperature is increased, which further confirms the electronic mechanism of thin-films and the trend of electron excitation energy versus annealing temperature.展开更多
In this paper, a deposition feature of a SiC:H films deposited by a RF sputtering system and a effect on the hardness of the films with various deposition conditions are investigated, and the effects of the silicon...In this paper, a deposition feature of a SiC:H films deposited by a RF sputtering system and a effect on the hardness of the films with various deposition conditions are investigated, and the effects of the silicon on a C:H are studied. It follows from the results that the properties of hardness can be changed with the depositing conditions. An increase of silane in the gas phase allows to deposit a SiC:H having tetrahedral structure. The sets of deposition conditions by which the different types of a SiC:H films can be deposited are obtained.展开更多
SiC-C films with different content of SiC were deposited with r. f. magnetron sputtering followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of 3.23×107 Pa for 3h...SiC-C films with different content of SiC were deposited with r. f. magnetron sputtering followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of 3.23×107 Pa for 3h at 500K. AES and XPS were used to analyze chemical bonding states of C and Si in the SiC-C films as well as contaminating oxygen before and after hydrogen gas permeation in order to study the effect of hydrogen on them. Related mechanism was discussed in this paper.展开更多
基金Funded by the National Natural Science Foundation of China(No.11747133)the Fundamental Research Funds for the Central Universities(No.195209019)。
文摘To study the effect of different deposition temperatures on the optical properties of porous SiC films,single crystal Si was used as the substrate,a layer of anodic aluminum oxide(AAO)film was transferred on the Si substrate by chemical method,and then a layer of SiC was deposited on anodic aluminum oxide(AAO)template to prepare porous fluorescent SiC film by magnetron sputtering.The deposition temperature was ranged from 373 to 873 K.The thickness of the porous SiC film coated on the AAO surface was around 283 nm.It is found that the porous SiC with the deposition temperature of 873 K has the strongest photoluminescence(PL)intensity excited by 375 nm laser.The time-resolved PL spectra prove that the PL is mainly from intrinsic light emitting of SiC.With the optimized process,porous amorphous SiC film may have potential applications in the field of warm white LEDs.
基金Financial support from the National Natural Science Foundation of China under the grant No.50132040 is grate-fully acknowledged.
文摘3C-SiC films have been deposited on Si （111） substrates by the low-pressure vertical chemical vapor deposition （LPVCVD） with gas mixtures of SiH4, Calls and H2. The growth mechanism of SiC films can be obtained through the observations using field emission scanning electron microscope （FESEM）. It is found that the growth process varies from surface control to diffusion control when the deposition temperature increases from 1270 to 1350℃. The X-ray diffraction （XRD） patterns show that the SiC films have good crystallinity and strong preferred orientation.The results of the high resolution transmission electron microscopy （HRTEM） image and the transmission electron diffraction （TED） pattern indicate a peculiar superlattice structure of the film. The values of the binding energy in the high resolution X-ray photoelectron spectra （XPS） further confirm the formation of SiC.
基金National Natural Science Foundation of China(No.50871086)the Research Fund of State Key Laboratory of Solidification Processing (NPU), China(No.KP200906)the President Research Foundation of Xi'an Technological University(No.XAGDXJJ1008)
文摘CH3SiCl3 （MTS）-H2-Ar system has been applied to prepare SiC film with chemical vapor deposition （CVD） method in this paper. For three facets of SiC film, some significant influence on growth rate, surface roughness, thickness and relative density brought by MTS consistency has been mainly discussed with kinetic monte carlo （KMC） method. The simulation results show that there is a certain scale for mol ratio of H2 to MTS （H2/MTS） with different deposition temperature. When MTS consistency increases, growth rate and surface roughness of three facets all increase, which manifests approximate linearity relationship. Thickness of three facets also increases while increasing trend of three facets thickness is different obviously. Although relative density of three facets all increases, increasing trend shows a little difference with MTS consistency increasing.
基金Natural Foundation of Hebei province, China (Grant 503129 and E2006000999)
文摘Nanocrystalline （nc） 3C-SiC films on the Si substrate were prepared by the helicon wave plasma enhanced chemical vapor deposition （HW-PECVD） technique. With the SiH4-CH4 gas flow ratio changing, the films exhibit different photoluminescence （PL） characteristics. Under the stoichiometric condition, the PL peak redshift from 470 nm to 515 nm is detected with the increase of excitation wavelength, which can be attributed to the quantum confinement effect radiation of 3C-SiC nanocrystals of different sizes. However, the appearance of an additional PL band at 436 nm in Si-rich film might be sourced back to the excess of Si defect centers in it. This is also the case for C-rich film for its PL band lying at 570 nm. The results above quoted indicate an important influence of gas flow ratio on the PL properties of the SiC films providing an effective guidance for analyzing the luminescence mechanism and exploring the high-efficiency light emission of the SiC films.
文摘The ion beam mixing prepared SiC films on stainless steel substrates were irradiated by hydrogen ion beam with an energy of 5 keV to a dose of 1 x 10(18) ions/cm(2). AES and XPS were used for the characterization of chemical bonding states of C and Si elements in SiC films as well as contamination oxygen before and after hydrogen ion irradiation in order to study the effect of hydrogen ion irradiation on SiC films and to understand oxygen behaviors in the SiC films prepared with ion beam mixing. The results shou, that contamination oxygen can react with silicon to form silicon oxides, and more oxygen entered into the films during hydrogen ion irradiation. In addition, oxygen also reacts with carbon related hydrogen to form species including carbon, hydrogen and oxygen.
基金supported by the Science Foun-dation of Educational Commission and Provincial Key Laboratory Program of Liaoning Province of China(Grant No.2008593 and CL-200902)~~
文摘Titanium dioxide(TiO2) films were prepared by cone - jet mode electrospraying a titanium ethoxideprecursor solution onto a silicon substrate.The effects of spraying time,substrate temperature and aging on thesurface morphology of the films prepared were studied.Thin films obtained after spraying for 600 s were aged atroom temperature to form a porous TiO2 network with pores in the size range of 100 - 500 nm.Thicker filmswere prepared by spraying for 3 000 s,but these cracked on drying although it can be concluded that films pre-pared using a higher substrate temperature were denser.By this method,SiC coating was also prepared on anAl2O3 substrate using polysilane as a precursor.The result implies the potential of an industrial production ofdye sensitized solar cells by electrospraying technique.
基金Project(20203015) supported by the National Natural Science Foundation of ChinaProject supported by the State Key Laboratory for Corrosion and Protection of China
文摘The point of zero charge(PZC) of SiC nanoparticles was determined by means of standard potentiometric titration method, while the influences of the main technological parameters on the microstructure of electrodeposited Ni-SiC composite film were studied and optimized. The results show that high bath pH value favors SiC nanoparticles negatively charged and high bath temperature promotes them positively charged. Under the experimental conditions, sodium dodecyl-glycol is proven to be an effective surface modification anionic surfactant for SiC nanoparticles. The results also show that the optimized Ni-SiC composite film is composed of the nanoparticles with the average grain size in the nanometer range (100 nm), and SiC nanoparticles disperse into the nickel matrix uniformly.
基金Project(60371046) supported by the National Natural Science Foundation of China
文摘SiC thin-films were prepared by RF-magnetron sputtering technique(RMS) with the target of single crystalline SiC and then annealed. The surface morphology of thin-films was characterized by AFM. The result shows that the surface of the thin-films is smooth and compact; XRD analysis reveals that the thin-films are amorphous. The thickness, square-resistance and curves of resistance—temperature were measured. The results show that the curves of lnR versus 1/kT both before and after annealing satisfy the expression of lnR∝△W/kT, where ?W is electron excitation energy in the range of 0.014 2-0.018 5 eV, and it has a trend of increasing when the temperature is increased. After synthetical analysis we get the conclusion that the electronic mechanism of the thin-films is short distance transition between the localized states in the temperature range of 25-250 ℃. The resistivity is in the range of 2.4×10-3-4.4×10-3 Ω·cm and it has the same trend as electron excitation energy when annealing temperature is increased, which further confirms the electronic mechanism of thin-films and the trend of electron excitation energy versus annealing temperature.
文摘In this paper, a deposition feature of a SiC:H films deposited by a RF sputtering system and a effect on the hardness of the films with various deposition conditions are investigated, and the effects of the silicon on a C:H are studied. It follows from the results that the properties of hardness can be changed with the depositing conditions. An increase of silane in the gas phase allows to deposit a SiC:H having tetrahedral structure. The sets of deposition conditions by which the different types of a SiC:H films can be deposited are obtained.
基金National Natural Science Foundation of China (5978100)
文摘SiC-C films with different content of SiC were deposited with r. f. magnetron sputtering followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of 3.23×107 Pa for 3h at 500K. AES and XPS were used to analyze chemical bonding states of C and Si in the SiC-C films as well as contaminating oxygen before and after hydrogen gas permeation in order to study the effect of hydrogen on them. Related mechanism was discussed in this paper.
