As a thin film solar cell absorber material, antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) has become a potential candidate recently because of its unique optical and electrical properties a...As a thin film solar cell absorber material, antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb<sub>2</sub>Se<sub>3</sub> thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive.展开更多
Sb<sub>2</sub>S<sub>3</sub> has gained tremendous research recently for thin film solar cell absorber material because of their easy synthesis, unique electrical and optical properties. The sto...Sb<sub>2</sub>S<sub>3</sub> has gained tremendous research recently for thin film solar cell absorber material because of their easy synthesis, unique electrical and optical properties. The stoichiometry and composition of electroless Sb<sub>2</sub>S<sub>3</sub> thin films were analyzed using XPS depth profile studies. The surface layers were found nearly stoichiometric. On the other hand, the inner layer was rich in antimony composition making it more conductive electrically.展开更多
CeO2-TiO2 films and CeO2-TiO/SnO2：Sb （6 mol%） double films were deposited on glass substrates by radio-frequency magnetron sputtering （R.F. Sputtering）, using SnO2：Sb（6 mol%） target, and CeO2- TiO2 targets wit...CeO2-TiO2 films and CeO2-TiO/SnO2：Sb （6 mol%） double films were deposited on glass substrates by radio-frequency magnetron sputtering （R.F. Sputtering）, using SnO2：Sb（6 mol%） target, and CeO2- TiO2 targets with different molar ratio of CeO2 to TiO2 （CeO2：TiO2-0：1.0; 0.1：0.9; 0.2：0.8; 0.3：0.7; 0.4：0.6; 0.5：0.5; 0.6：0.4; 0.7：0.3; 0.8：0.2; 0.9：0.1; 1.0：0）. The films are characterized by UV-visible transmission and infrared reflection spectra, scanning electron microscopy （SEM）, Raman spectroscopy, X-ray photoelectron spectroscopy （XPS） and X-ray diffraction （XRD）, respectively. The obtained results show that the amorphous phases composed of CeO2-TiO2 play an important role in absorbing UV, there are Ce^3-, Ce^4- and Ti^4- on the surface of the films; the glass substrates coated with CeO2-TiO2 （Ce/Ti=0.5：0.5; 0.6：0.4）/SnO2：Sb（6 mol%） double films show high absorbing UV（〉99）, high visible light transmission （75%） and good infrared reflection （〉70%）. The sheet resistance of the films is 30-50 Ω/□. The glass substrates coated with the double functional films can be used as window glass of buildings, automobile and so on.展开更多
We elucidate the importance of a capping layer on the structural evolution and phase change properties of carbondoped Ge2 Sb2 Te5（C-GST） films during heating in air. Both the C-GST films without and with a thin SiO2...We elucidate the importance of a capping layer on the structural evolution and phase change properties of carbondoped Ge2 Sb2 Te5（C-GST） films during heating in air. Both the C-GST films without and with a thin SiO2 capping layer（C-GST and C-GST/SiO2） are deposited for comparison. Large differences are observed between C-GST and C-GST/SiO2 films in resistance-temperature, x-ray diffraction, x-ray photoelectron spectroscopy,Raman spectra, data retention capability and optical band gap measurements. In the C-GST film, resistancetemperature measurement reveals an unusual smooth decrease in resistance above 110℃ during heating. Xray diffraction result has excluded the possibility of phase change in the C-GST film below 170℃. The x-ray photoelectron spectroscopy experimental result reveals the evolution of Te chemical valence because of the carbon oxidation during heating. Raman spectra further demonstrate that phase changes from an amorphous state to the hexagonal state occur directly during heating in the C-GST film. The quite smooth decrease in resistance is believed to be related with the formation of Te-rich GeTe4-n Gen（n = 0, 1） units above 110℃ in the C-GST film. The oxidation of carbon is harmful to the C-GST phase change properties.展开更多
After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature（~240°C）, larger crystallization activation energy（6.22 e V）, and better data...After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature（~240°C）, larger crystallization activation energy（6.22 e V）, and better data retention ability（189°C for 10 y）. The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb（3 nm）/SiO_2（7 nm）-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb（3 nm）/SiO_2（7 nm） thin film shows a low thermal conductivity of 0.13 W/（m·K）.展开更多
The Sb6 Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb6 Te4, Sb6 Te4/VO2 multilayer composite thin f...The Sb6 Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb6 Te4, Sb6 Te4/VO2 multilayer composite thin films have higher phase change temperature and crystallization resistance, indicating better thermal stability and less power consumption. Also, Sb6 Te4/VO2 has a broader energy band of 1.58 eV and better data retention （125℃ for 103/）. The crystallization is suppressed by the multilayer interfaces in Sbf Te4/VO2 thin film with a smaller rms surface roughness for Sbf Te4/VO2 than monolayer Sb4Te6. The picosecond laser technology is applied to study the phase change speed. A short crystallization time of 5.21 ns is realized for the Sb6Te4 （2nm）/VO2 （8nm） thin film. The Sb6 Te4/VO2 multilayer thin film is a potential and competitive phase change material for its good thermal stability and fast phase change speed.展开更多
文摘As a thin film solar cell absorber material, antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb<sub>2</sub>Se<sub>3</sub> thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive.
文摘Sb<sub>2</sub>S<sub>3</sub> has gained tremendous research recently for thin film solar cell absorber material because of their easy synthesis, unique electrical and optical properties. The stoichiometry and composition of electroless Sb<sub>2</sub>S<sub>3</sub> thin films were analyzed using XPS depth profile studies. The surface layers were found nearly stoichiometric. On the other hand, the inner layer was rich in antimony composition making it more conductive electrically.
基金the program for Changjiang Scholars and Innovative Research Team in University (No.IRT0547
文摘CeO2-TiO2 films and CeO2-TiO/SnO2：Sb （6 mol%） double films were deposited on glass substrates by radio-frequency magnetron sputtering （R.F. Sputtering）, using SnO2：Sb（6 mol%） target, and CeO2- TiO2 targets with different molar ratio of CeO2 to TiO2 （CeO2：TiO2-0：1.0; 0.1：0.9; 0.2：0.8; 0.3：0.7; 0.4：0.6; 0.5：0.5; 0.6：0.4; 0.7：0.3; 0.8：0.2; 0.9：0.1; 1.0：0）. The films are characterized by UV-visible transmission and infrared reflection spectra, scanning electron microscopy （SEM）, Raman spectroscopy, X-ray photoelectron spectroscopy （XPS） and X-ray diffraction （XRD）, respectively. The obtained results show that the amorphous phases composed of CeO2-TiO2 play an important role in absorbing UV, there are Ce^3-, Ce^4- and Ti^4- on the surface of the films; the glass substrates coated with CeO2-TiO2 （Ce/Ti=0.5：0.5; 0.6：0.4）/SnO2：Sb（6 mol%） double films show high absorbing UV（〉99）, high visible light transmission （75%） and good infrared reflection （〉70%）. The sheet resistance of the films is 30-50 Ω/□. The glass substrates coated with the double functional films can be used as window glass of buildings, automobile and so on.
基金Supported by the National Natural Science Foundation of China under Grant No 11704161the Natural Science Foundation of Jiangsu Province under Grant Nos BK20170309 and BK20151172the Changzhou Science and Technology Bureau under Grant Nos CJ20159049 and CJ20160028
文摘We elucidate the importance of a capping layer on the structural evolution and phase change properties of carbondoped Ge2 Sb2 Te5（C-GST） films during heating in air. Both the C-GST films without and with a thin SiO2 capping layer（C-GST and C-GST/SiO2） are deposited for comparison. Large differences are observed between C-GST and C-GST/SiO2 films in resistance-temperature, x-ray diffraction, x-ray photoelectron spectroscopy,Raman spectra, data retention capability and optical band gap measurements. In the C-GST film, resistancetemperature measurement reveals an unusual smooth decrease in resistance above 110℃ during heating. Xray diffraction result has excluded the possibility of phase change in the C-GST film below 170℃. The x-ray photoelectron spectroscopy experimental result reveals the evolution of Te chemical valence because of the carbon oxidation during heating. Raman spectra further demonstrate that phase changes from an amorphous state to the hexagonal state occur directly during heating in the C-GST film. The quite smooth decrease in resistance is believed to be related with the formation of Te-rich GeTe4-n Gen（n = 0, 1） units above 110℃ in the C-GST film. The oxidation of carbon is harmful to the C-GST phase change properties.
基金Supported by the National Natural Science Foundation of China under Grant No 11774438the Natural Science Foundation of Jiangsu Province under Grant No BK20151172+2 种基金the Changzhou Science and Technology Bureau under Grant No CJ20160028the Qing Lan Project,the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences
文摘After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature（~240°C）, larger crystallization activation energy（6.22 e V）, and better data retention ability（189°C for 10 y）. The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb（3 nm）/SiO_2（7 nm）-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb（3 nm）/SiO_2（7 nm） thin film shows a low thermal conductivity of 0.13 W/（m·K）.
基金Supported by the National Natural Science Foundation of China under Grant No 11774438the Natural Science Foundation of Jiangsu Province under Grant No BK20151172+2 种基金the Qing Lan Project,the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Chinese Academy of Sciencesthe Postgraduate Research and Practice Innovation Program of Jiangsu Province under Grant No SJCX18_1024
文摘The Sb6 Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb6 Te4, Sb6 Te4/VO2 multilayer composite thin films have higher phase change temperature and crystallization resistance, indicating better thermal stability and less power consumption. Also, Sb6 Te4/VO2 has a broader energy band of 1.58 eV and better data retention （125℃ for 103/）. The crystallization is suppressed by the multilayer interfaces in Sbf Te4/VO2 thin film with a smaller rms surface roughness for Sbf Te4/VO2 than monolayer Sb4Te6. The picosecond laser technology is applied to study the phase change speed. A short crystallization time of 5.21 ns is realized for the Sb6Te4 （2nm）/VO2 （8nm） thin film. The Sb6 Te4/VO2 multilayer thin film is a potential and competitive phase change material for its good thermal stability and fast phase change speed.
