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Detonator stepping stress acceleration life test
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作者 郑波 张红星 王波 《Journal of Measurement Science and Instrumentation》 CAS 2013年第2期139-141,共3页
Through the failure mechanism analysi s and simulation test of a certain kind of detonator,this paper confirms the str ess level of the stepping stress acceleration life test of the detonator,and t hen e stablishes th... Through the failure mechanism analysi s and simulation test of a certain kind of detonator,this paper confirms the str ess level of the stepping stress acceleration life test of the detonator,and t hen e stablishes the data processing mathematical model and storage life forecasting m ethod.At last,according to the result of the stepping stress acceleration lif e test of the detonator,this paper forecasts the reliable storage life of the detonator under the normal stress level. 展开更多
关键词 DETONATOR stepping stress acceleration life test storage life forecast
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Parameter Estimation Based on Censored Data under Partially Accelerated Life Testing for Hybrid Systems due to Unknown Failure Causes
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作者 Mustafa Kamal 《Computer Modeling in Engineering & Sciences》 SCIE EI 2022年第3期1239-1269,共31页
In general,simple subsystems like series or parallel are integrated to produce a complex hybrid system.The reliability of a system is determined by the reliability of its constituent components.It is often extremely d... In general,simple subsystems like series or parallel are integrated to produce a complex hybrid system.The reliability of a system is determined by the reliability of its constituent components.It is often extremely difficult or impossible to get specific information about the component that caused the system to fail.Unknown failure causes are instances in which the actual cause of systemfailure is unknown.On the other side,thanks to current advanced technology based on computers,automation,and simulation,products have become incredibly dependable and trustworthy,and as a result,obtaining failure data for testing such exceptionally reliable items have become a very costly and time-consuming procedure.Therefore,because of its capacity to produce rapid and adequate failure data in a short period of time,accelerated life testing(ALT)is the most utilized approach in the field of product reliability and life testing.Based on progressively hybrid censored(PrHC)data froma three-component parallel series hybrid system that failed to owe to unknown causes,this paper investigates a challenging problem of parameter estimation and reliability assessment under a step stress partially accelerated life-test(SSPALT).Failures of components are considered to follow a power linear hazard rate(PLHR),which can be used when the failure rate displays linear,decreasing,increasing or bathtub failure patterns.The Tempered random variable(TRV)model is considered to reflect the effect of the high stress level used to induce early failure data.The maximum likelihood estimation(MLE)approach is used to estimate the parameters of the PLHR distribution and the acceleration factor.A variance covariance matrix(VCM)is then obtained to construct the approximate confidence intervals(ACIs).In addition,studentized bootstrap confidence intervals(ST-B CIs)are also constructed and compared with ACIs in terms of their respective interval lengths(ILs).Moreover,a simulation study is conducted to demonstrate the performance of the estimation procedures and the methodology discussed in this paper.Finally,real failure data from the air conditioning systems of an airplane is used to illustrate further the performance of the suggested estimation technique. 展开更多
关键词 step stress partially accelerated life test progressive hybrid censoring data masking power linear hazard rate distribution hybrid system
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High-field-induced electron detrapping in an AlGaN/GaN high electron mobility transistor 被引量:4
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作者 付立华 陆海 +4 位作者 陈敦军 张荣 郑有炓 魏珂 刘新宇 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第10期512-515,共4页
A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor(HEMT).An anomalous critical drain-to-gate voltage with a negative temperature coefficient ... A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor(HEMT).An anomalous critical drain-to-gate voltage with a negative temperature coefficient is observed in the stress sequence,beyond which the HEMT device starts to recover from degradation induced by early lower voltage stress.While the performance degradation featuring the drain current slump stems from electron trapping in the surface or bulk states during low-to-medium bias stress,the recovery is attributed to high field induced electron detrapping.The carrier detrapping mechanism could be helpful for lessening the trapping-related performance degradation of a GaN-based HEMT. 展开更多
关键词 AlGaN/GaN HEMT step stress test high electric field electron detrapping
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