Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric properties.New Bi-based perovskite thin films Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)(BCT–PT...Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric properties.New Bi-based perovskite thin films Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)(BCT–PT) are deposited on Pt(111)/Ti/SiO_(2)/Si substrates in the present study by the traditional sol–gel method.Their structures and related ferroelectric and fatigue characteristics are studied in-depth.The BCT–PT thin films exhibit good crystallization within the phase-pure perovskite structure,besides,they have a predominant(100) orientation together with a dense and homogeneous microstructure.The remnant polarization(2P_(r)) values at 30 μC/cm^(2) and 16 μC/cm^(2) are observed in 0.1BCT–0.9PT and 0.2BCT–0.8PT thin films,respectively.More intriguingly,although the polarization values are not so high,0.2BCT–0.8PT thin films show outstanding polarization fatigue properties,with a high switchable polarization of 93.6% of the starting values after 10^(8) cycles,indicating promising applications in ferroelectric memories.展开更多
In this study we are reporting annealing induced optical properties of bismuth ferrite (BiFeO3) thin films deposited on glass substrate via spin coating at 5000 rpm. The structural, optical and surface morphology of B...In this study we are reporting annealing induced optical properties of bismuth ferrite (BiFeO3) thin films deposited on glass substrate via spin coating at 5000 rpm. The structural, optical and surface morphology of BiFeO3 (BFO) thin films have been studied via X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Optical absorption (UV-Vis) and Photoluminescence (PL) spectroscopy. XRD spectra confirm annealing induced phase formation of BiFeO3 possessing a rhombohedral R3c structure. The films are dense and without cracks, although the presence of porosity in BFO/glass was observed. Moreover, optical absorption spectra indicate annealing induced effect on the energy band structure in comparison to pristine BiFeO3. It is observed that annealing effect shows an intense shift in the UV-Vis spectra as diffuse absorption together with the variation in the optical band gap. The evaluated optical band gap values are approximately equal to the bulk band gap value of BiFeO3.展开更多
Polymer-derived ceramic(PDC) thin films are promising wear-resistant coatings for protecting metals and carbon-carbon composites from corrosion and oxidation.However,the high pyrolysis temperature hinders the applicat...Polymer-derived ceramic(PDC) thin films are promising wear-resistant coatings for protecting metals and carbon-carbon composites from corrosion and oxidation.However,the high pyrolysis temperature hinders the applications on substrate materials with low melting points.We report a new synthesis route for PDC coatings using initiated chemical vapor deposited poly(1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane)(pV_3D_3) as the precurs or.We investigated the changes in siloxane moieties and the network topology,and proposed a three-stage mechanism for the thermal annealing process.The rise of the connectivity number for the structures obtained at increased annealing temperatures was found with strong correlation to the enhanced mechanical properties and thermal conductivity.Our PDC films obtained via annealing at 850℃ exhibit at least 14.6% higher hardness than prior reports for PDCs synthesized below 1100℃.Furthermore,thermal conductivity up to 1.02 W(mK)^(-1) was achieved at the annealing temperature as low as 700℃,which is on the same order of magnitude as PDCs obtained above 1100℃.Using minimum thermal conductivity models,we found that the thermal transport is dominated by diffusons in the films below the percolation of rigidity,while ultra-short mean-free path phonons contribute to the thermal conductivity of the films above the percolation threshold.The findings of this work provide new insights for the development of wear-resistant and thermally conductive PDC thin films for durable protection coatings.展开更多
Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-...Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystal-line with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scher-rer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uni-formly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an en-ergy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current-voltage characteristics, ION/IOFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.展开更多
Spray pyrolysis method was used to deposit Lutetium Oxide (Lu<sub>2</sub>O<sub>3</sub>) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried ...Spray pyrolysis method was used to deposit Lutetium Oxide (Lu<sub>2</sub>O<sub>3</sub>) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried out in argon atmosphere at 450°C for 60 minutes of the films. To investigate the composition and stoichiometry of sprayed as-deposited and annealed Lu<sub>2</sub>O<sub>3</sub> thin films, depth profile studies using X-ray photoelectron spectroscopy (XPS) was done. Nearly stoichiometric was observed for both annealed and as-deposited films in inner and surface layers.展开更多
Ga<sub>2</sub>O<sub>3</sub> thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C fo...Ga<sub>2</sub>O<sub>3</sub> thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga<sub>2</sub>O<sub>3</sub> thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.展开更多
The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were...The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr (remanent polarization) value of Bi3.25La0.75Ti3O12 thin films is 18.6 μC/cm^2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.2eLa0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.展开更多
FePt thin films and [FePt/Ag]n multilayer thin films were prepared by magnetron sputtering technique and subsequent annealing process. By comparing the microstructure and magnetic properties of these two kinds of thin...FePt thin films and [FePt/Ag]n multilayer thin films were prepared by magnetron sputtering technique and subsequent annealing process. By comparing the microstructure and magnetic properties of these two kinds of thin films, effects of Ag addition on the structure and properties of FePt thin films were investigated. Proper Ag addition was found helpful for FePt phase transition at lower annealing temperature. With Ag addition, the magnetic domain pattern of FePt thin film changed from maze-like pattern to more discrete island-like domain pattern in [FePt/Ag]n multilayer thin films. In addition, introducing nonmagnetic Ag hindered FePt grains from growing larger. The in-depth defects in FePt films and [FePt/Ag]n multilayer films verify that Ag addition is attributed to a large number of pinning site defects in [FePt/Ag]n film and therefore has effects on its magnetic properties and microstructure.展开更多
In attempts to fabricate thermally stable second-order nonlinear polymer thin films, we have investigated the second harmonic generation (SHG) from both nonlinear polymer and guest-host thin films. We have also invest...In attempts to fabricate thermally stable second-order nonlinear polymer thin films, we have investigated the second harmonic generation (SHG) from both nonlinear polymer and guest-host thin films. We have also investigated the role of capping on the SHG, temporal stability and relaxation of dipole alignment. Corona poling techniques were employed to orient the dopants into the noncentrosymmetric structure required to obtain the SHG. The effect of capping with a polymeric encapsulant below the glass transition temperature of the polymers on the unpoled and corona poled thin films was studied. Capping of the nonlinear polymer and guest host thin films have resulted in high SHG with good temporal stability. SHG signal falls drastically during the first 8 days after poling while no further significant decay in SHG signal was observed after about 33 days. Our investigations have identified the characteristics required for a good encapsulant on a non-con-ductive surface.展开更多
Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containing Al (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The stru...Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containing Al (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400℃, respectively) were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.展开更多
Permeability characteristics of sputtered soft magnetic Fe40Co40B20 thin films are investigated in the range of O. 5 to 5 GHz by a shortened microstrip transmission line perturbation method. Excellent microwave permea...Permeability characteristics of sputtered soft magnetic Fe40Co40B20 thin films are investigated in the range of O. 5 to 5 GHz by a shortened microstrip transmission line perturbation method. Excellent microwave permeability is achieved at 0.4 Pa argon pressure: fr is 3.32 GHz, the real and imaginary part of permeability at 0.5 GHz are 104 and 61, respectively. In addition, the thickness effect on permeability is also studied. The minimum damping can be achieved at the thinnest film. Different sources contributed to in-plane anisotropy are discussed briefly. The deviation between the peak frequency of the imaginary part and the zero-crossing frequency of the real part of permeability is also presented.展开更多
Zinc oxide (ZnO) thin films were deposited on sapphire (0001) substrates at room temperature by radiofrequency (RF) magnetron sputtering at oxygen gas contents of 0%, 25%, 50% and 75%, respectively. The influenc...Zinc oxide (ZnO) thin films were deposited on sapphire (0001) substrates at room temperature by radiofrequency (RF) magnetron sputtering at oxygen gas contents of 0%, 25%, 50% and 75%, respectively. The influence of oxygen gas content on the structural and optical properties of ZnO thin films was studied by a surface profile measuring system, X-ray diffraction analysis, atomic force microscopy, and UV spectro- photometry. It is found that the size of ZnO crystalline grains increases first and then decreases with the increase of oxygen gas content, and the maximum grain size locates at the 25% oxygen gas content. The crystalline quality and average optical transmittance (〉90%) in the visi- ble-light region of the ZnO film prepared at an oxygen gas content of 25% are better than those of ZnO films at the other contents. The obtained results can be attributed to the resputtefing by energetic oxygen anions in the growing process.展开更多
Transparent anatase TiO2 nanometer thin films with photocatalytic activity were prepared via the sol-gel method on soda-lime glass. The thickness , crystalline phase, grain size, surface hydroxyl amount and so on were...Transparent anatase TiO2 nanometer thin films with photocatalytic activity were prepared via the sol-gel method on soda-lime glass. The thickness , crystalline phase, grain size, surface hydroxyl amount and so on were characterized by scanning electron microscopy (SEM) , X-ray diffraction (XRD), transmission electron microscopy ( TEM), X-ray photoelectron spectroscopy (XPS) and UV-visible spectrophotometer ( UV-VIS). The photocatalytic activity of TiO2 thin films was evaluated for the photocatalytic decolorization of aqueous methyl orange . The effects of film thickness on the crystalline phase, grain size, transmittance and photocatalytic activity of nanometer Ti02 thin films were discussed.展开更多
Two kinds of TiO_2 nanometer thin films were prepared on stainless steel bythe reverse micellar and sol-gel methods, respectively. The calcined TiO_ 2 thin films werecharacterized by X-ray diffraction (XRD), atomic fo...Two kinds of TiO_2 nanometer thin films were prepared on stainless steel bythe reverse micellar and sol-gel methods, respectively. The calcined TiO_ 2 thin films werecharacterized by X-ray diffraction (XRD), atomic force microscopy (AFM), BET surface area and X-rayphotoelectron spectroscopy (XPS). Photocatalytic activity was evaluated by photocatalyticdecoloration of methyl orange aqueous solution. The results showed that the TiO_2 thin filmsprepared by reverse micellar method (designated as RM-TiO_2 films) showed higher photocatalyticactivity than those by sol-gel method (designated as SG-TiO_2 films). This is attributed to the factthat the former is composed of smaller monodispersed spherical particles with a size of about 15 nmand possesses higher surface areas.展开更多
The ion selectivity of electrodeposited nickel hexacyanoferrate (NiHCF) thin films was investigated using electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV). NiHCF thin films were prepared ...The ion selectivity of electrodeposited nickel hexacyanoferrate (NiHCF) thin films was investigated using electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV). NiHCF thin films were prepared by cathodic deposition on Pt and Al substrates. EIS and CV curves were determined in 1 mol/L (KNO3+C5NO3) and 1 mol/L (NaNO3+CsNO3) mixture solutions, which were sensitive to the concentration of Cs^+ in the electrolytes. Experimental results show that all Nyquist impedance plots show depressed semicircles in the high-frequency range changing over into straight lines at lower frequencies. With increasing amounts of Cs^+, the redox potentials in CV curves shift toward more positive values and the redox peaks broaden; the semicircle radius in corresponding EIS curves and the charge transfer resistance also increase. EIS combining CV is able to provide valuable insights into the ion selectivity of NiHCF thin films. 2008 University of Science and Technology Beijing. All rights reserved.展开更多
Boron-doped NiO thin films were prepared on glass substrates at 400℃ by airbrush spraying method using a solution of nickel nitrate hexahydrate. Their physical properties were investigated as a function of dopant con...Boron-doped NiO thin films were prepared on glass substrates at 400℃ by airbrush spraying method using a solution of nickel nitrate hexahydrate. Their physical properties were investigated as a function of dopant concentration. From X-ray diffraction patterns, it is observed that the films have cubic structure with lattice parameters varying with boron concentration. The morphologies of the films were examined by using scanning electron microscopy, and the grain sizes were measured to be around 30-50 nm. Optical measurements show that the band gap energies of the films first decrease then increase with increasing boron concentration. The resistivities of the films were determined by four point probe method, and the changes in resistivity with boron concentration were investigated.展开更多
In-situ pure TiO2 and Fe-doped TiO2 thin films were synthesized on Ti plates via the micro-arc oxidation (MAO) technique. The as-fabricated anatase TiO2 thin film-based conductometric sensors were employed to measur...In-situ pure TiO2 and Fe-doped TiO2 thin films were synthesized on Ti plates via the micro-arc oxidation (MAO) technique. The as-fabricated anatase TiO2 thin film-based conductometric sensors were employed to measure the gas sensitivity to ethanol. The results showed that Fe ions could be easily introduced into the MAO-TiO2 thin films by adding precursor K4(FeCN)6'3H20 into the NaaPO4 electrolyte. The amount of doped Fe ions increased almost linearly with the concentration of Kg(FeCN)63H20 increasing, eventually affecting the ethanol sensing performances of TiO2 thin films. It was found that the enhanced sensor signals obtained had an optimal concentration of Fe dopant (1.28at%), by which the maximal gas sensor signal to 1000 ppm ethanol was estimated to be 7.91 at 275℃. The response time was generally reduced by doped Fe ions, which could be ascribed to the increase of oxygen vacancies caused by Fe3+ substituting for Ti4+.展开更多
This paper reports that ion implantation to a dose of 1 ×10^17 ions/cm^2 was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantatio...This paper reports that ion implantation to a dose of 1 ×10^17 ions/cm^2 was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600 - 900 ℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction (XRD), photoluminescence (PL). It was found that the intensities of (002) peak and near band edge (NBE) exitonic ultraviolet emission increased with increasing annealing temperature from 600- 900 ℃. The defect related deep level emission (DLE) firstly increased with increasing annealing temperature from 600 - 750 ℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at ~850℃ and ~750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 - 900 ℃.展开更多
Barium titanate(BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition(PAD) technique.The growth conditions including ambient and annealing temperatures were carefully ...Barium titanate(BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition(PAD) technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr~ 400 and tan δ 〈 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2021YFA1400300)the National Natural Science Foundation of China(Grant Nos.22271309,21805215,11934017,12261131499,and 11921004)+1 种基金the Beijing Natural Science Foundation(Grant No.Z200007)the Fund from the Chinese Academy of Sciences(Grant No.XDB33000000)。
文摘Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric properties.New Bi-based perovskite thin films Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)(BCT–PT) are deposited on Pt(111)/Ti/SiO_(2)/Si substrates in the present study by the traditional sol–gel method.Their structures and related ferroelectric and fatigue characteristics are studied in-depth.The BCT–PT thin films exhibit good crystallization within the phase-pure perovskite structure,besides,they have a predominant(100) orientation together with a dense and homogeneous microstructure.The remnant polarization(2P_(r)) values at 30 μC/cm^(2) and 16 μC/cm^(2) are observed in 0.1BCT–0.9PT and 0.2BCT–0.8PT thin films,respectively.More intriguingly,although the polarization values are not so high,0.2BCT–0.8PT thin films show outstanding polarization fatigue properties,with a high switchable polarization of 93.6% of the starting values after 10^(8) cycles,indicating promising applications in ferroelectric memories.
文摘In this study we are reporting annealing induced optical properties of bismuth ferrite (BiFeO3) thin films deposited on glass substrate via spin coating at 5000 rpm. The structural, optical and surface morphology of BiFeO3 (BFO) thin films have been studied via X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Optical absorption (UV-Vis) and Photoluminescence (PL) spectroscopy. XRD spectra confirm annealing induced phase formation of BiFeO3 possessing a rhombohedral R3c structure. The films are dense and without cracks, although the presence of porosity in BFO/glass was observed. Moreover, optical absorption spectra indicate annealing induced effect on the energy band structure in comparison to pristine BiFeO3. It is observed that annealing effect shows an intense shift in the UV-Vis spectra as diffuse absorption together with the variation in the optical band gap. The evaluated optical band gap values are approximately equal to the bulk band gap value of BiFeO3.
基金funding from the National Natural Science Foundation of China (22178301,21938011,51876186and 52150410417)the funding from the Natural Science Foundation of Zhejiang Province (LR21B060003 and LZ19E060002)+1 种基金grant from Science Technology Department of Zhejiang Province (2023C01182)supported by Shanxi Institute of Zhejiang University for New Materials and Chemical Industry(2022SZ-TD005)。
文摘Polymer-derived ceramic(PDC) thin films are promising wear-resistant coatings for protecting metals and carbon-carbon composites from corrosion and oxidation.However,the high pyrolysis temperature hinders the applications on substrate materials with low melting points.We report a new synthesis route for PDC coatings using initiated chemical vapor deposited poly(1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane)(pV_3D_3) as the precurs or.We investigated the changes in siloxane moieties and the network topology,and proposed a three-stage mechanism for the thermal annealing process.The rise of the connectivity number for the structures obtained at increased annealing temperatures was found with strong correlation to the enhanced mechanical properties and thermal conductivity.Our PDC films obtained via annealing at 850℃ exhibit at least 14.6% higher hardness than prior reports for PDCs synthesized below 1100℃.Furthermore,thermal conductivity up to 1.02 W(mK)^(-1) was achieved at the annealing temperature as low as 700℃,which is on the same order of magnitude as PDCs obtained above 1100℃.Using minimum thermal conductivity models,we found that the thermal transport is dominated by diffusons in the films below the percolation of rigidity,while ultra-short mean-free path phonons contribute to the thermal conductivity of the films above the percolation threshold.The findings of this work provide new insights for the development of wear-resistant and thermally conductive PDC thin films for durable protection coatings.
基金support of the laboratory of active components and materials,Oum El Bouaghi University.
文摘Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystal-line with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scher-rer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uni-formly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an en-ergy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current-voltage characteristics, ION/IOFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.
文摘Spray pyrolysis method was used to deposit Lutetium Oxide (Lu<sub>2</sub>O<sub>3</sub>) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried out in argon atmosphere at 450°C for 60 minutes of the films. To investigate the composition and stoichiometry of sprayed as-deposited and annealed Lu<sub>2</sub>O<sub>3</sub> thin films, depth profile studies using X-ray photoelectron spectroscopy (XPS) was done. Nearly stoichiometric was observed for both annealed and as-deposited films in inner and surface layers.
文摘Ga<sub>2</sub>O<sub>3</sub> thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga<sub>2</sub>O<sub>3</sub> thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.
基金the Foundation of Wuhan University of Science and Technology
文摘The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr (remanent polarization) value of Bi3.25La0.75Ti3O12 thin films is 18.6 μC/cm^2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.2eLa0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.
基金the National Natural Science Foundation of China (No. 60571010)the Open Foundation of the Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province in Hubei University
文摘FePt thin films and [FePt/Ag]n multilayer thin films were prepared by magnetron sputtering technique and subsequent annealing process. By comparing the microstructure and magnetic properties of these two kinds of thin films, effects of Ag addition on the structure and properties of FePt thin films were investigated. Proper Ag addition was found helpful for FePt phase transition at lower annealing temperature. With Ag addition, the magnetic domain pattern of FePt thin film changed from maze-like pattern to more discrete island-like domain pattern in [FePt/Ag]n multilayer thin films. In addition, introducing nonmagnetic Ag hindered FePt grains from growing larger. The in-depth defects in FePt films and [FePt/Ag]n multilayer films verify that Ag addition is attributed to a large number of pinning site defects in [FePt/Ag]n film and therefore has effects on its magnetic properties and microstructure.
文摘In attempts to fabricate thermally stable second-order nonlinear polymer thin films, we have investigated the second harmonic generation (SHG) from both nonlinear polymer and guest-host thin films. We have also investigated the role of capping on the SHG, temporal stability and relaxation of dipole alignment. Corona poling techniques were employed to orient the dopants into the noncentrosymmetric structure required to obtain the SHG. The effect of capping with a polymeric encapsulant below the glass transition temperature of the polymers on the unpoled and corona poled thin films was studied. Capping of the nonlinear polymer and guest host thin films have resulted in high SHG with good temporal stability. SHG signal falls drastically during the first 8 days after poling while no further significant decay in SHG signal was observed after about 33 days. Our investigations have identified the characteristics required for a good encapsulant on a non-con-ductive surface.
基金the Program for New Century Excellent Talents in Universities, MOE, China (No. NCET-05-0764)the Tackle Key Problems on Scientific Technology Foundation of Chongqing Municipality (Nos. CSTC2005AA4006-A6 and CSTC2004AC4034)+2 种基金the Natural Science Foundation of Chongqing Municipality (No. CSTC2005BA4016)China Postdoctoral Science Foundation (No. 2005037544)the Inno-base for Graduates of Chongqing University (No. 200506Y1B0240131).
文摘Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containing Al (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400℃, respectively) were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.
文摘Permeability characteristics of sputtered soft magnetic Fe40Co40B20 thin films are investigated in the range of O. 5 to 5 GHz by a shortened microstrip transmission line perturbation method. Excellent microwave permeability is achieved at 0.4 Pa argon pressure: fr is 3.32 GHz, the real and imaginary part of permeability at 0.5 GHz are 104 and 61, respectively. In addition, the thickness effect on permeability is also studied. The minimum damping can be achieved at the thinnest film. Different sources contributed to in-plane anisotropy are discussed briefly. The deviation between the peak frequency of the imaginary part and the zero-crossing frequency of the real part of permeability is also presented.
基金supported by the National Natural Science Foundation of China (Nos. 60876055 and11074063)the Natural Science foundation of Hebei Province,China (Nos. E2008000620 and E2009000207)+1 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China (No. 20091301110002)the Key Basic Research Program of Hebei Provincial Applied Basic Research Plan (No. 10963525D)
文摘Zinc oxide (ZnO) thin films were deposited on sapphire (0001) substrates at room temperature by radiofrequency (RF) magnetron sputtering at oxygen gas contents of 0%, 25%, 50% and 75%, respectively. The influence of oxygen gas content on the structural and optical properties of ZnO thin films was studied by a surface profile measuring system, X-ray diffraction analysis, atomic force microscopy, and UV spectro- photometry. It is found that the size of ZnO crystalline grains increases first and then decreases with the increase of oxygen gas content, and the maximum grain size locates at the 25% oxygen gas content. The crystalline quality and average optical transmittance (〉90%) in the visi- ble-light region of the ZnO film prepared at an oxygen gas content of 25% are better than those of ZnO films at the other contents. The obtained results can be attributed to the resputtefing by energetic oxygen anions in the growing process.
基金This work was financially supported by Foundation for Uni-versity Key Teacher by the Ministry of Education, the National Natu-ral Science Foundation of China (No. 50072016) and the Key Re-search Project of the Ministry of Education(No.99087)
文摘Transparent anatase TiO2 nanometer thin films with photocatalytic activity were prepared via the sol-gel method on soda-lime glass. The thickness , crystalline phase, grain size, surface hydroxyl amount and so on were characterized by scanning electron microscopy (SEM) , X-ray diffraction (XRD), transmission electron microscopy ( TEM), X-ray photoelectron spectroscopy (XPS) and UV-visible spectrophotometer ( UV-VIS). The photocatalytic activity of TiO2 thin films was evaluated for the photocatalytic decolorization of aqueous methyl orange . The effects of film thickness on the crystalline phase, grain size, transmittance and photocatalytic activity of nanometer Ti02 thin films were discussed.
基金This project is financially supported by the National Natural Science Foundation of China (No.s 50272049, 50072016) The Excellent Young Teachers Program of MOE, China (No. (2002)350)
文摘Two kinds of TiO_2 nanometer thin films were prepared on stainless steel bythe reverse micellar and sol-gel methods, respectively. The calcined TiO_ 2 thin films werecharacterized by X-ray diffraction (XRD), atomic force microscopy (AFM), BET surface area and X-rayphotoelectron spectroscopy (XPS). Photocatalytic activity was evaluated by photocatalyticdecoloration of methyl orange aqueous solution. The results showed that the TiO_2 thin filmsprepared by reverse micellar method (designated as RM-TiO_2 films) showed higher photocatalyticactivity than those by sol-gel method (designated as SG-TiO_2 films). This is attributed to the factthat the former is composed of smaller monodispersed spherical particles with a size of about 15 nmand possesses higher surface areas.
基金the National Natural Science Foundation of China(No.20676089)the Scholar Council Foundation of Shanxi Province,China(No.2004-24).
文摘The ion selectivity of electrodeposited nickel hexacyanoferrate (NiHCF) thin films was investigated using electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV). NiHCF thin films were prepared by cathodic deposition on Pt and Al substrates. EIS and CV curves were determined in 1 mol/L (KNO3+C5NO3) and 1 mol/L (NaNO3+CsNO3) mixture solutions, which were sensitive to the concentration of Cs^+ in the electrolytes. Experimental results show that all Nyquist impedance plots show depressed semicircles in the high-frequency range changing over into straight lines at lower frequencies. With increasing amounts of Cs^+, the redox potentials in CV curves shift toward more positive values and the redox peaks broaden; the semicircle radius in corresponding EIS curves and the charge transfer resistance also increase. EIS combining CV is able to provide valuable insights into the ion selectivity of NiHCF thin films. 2008 University of Science and Technology Beijing. All rights reserved.
文摘Boron-doped NiO thin films were prepared on glass substrates at 400℃ by airbrush spraying method using a solution of nickel nitrate hexahydrate. Their physical properties were investigated as a function of dopant concentration. From X-ray diffraction patterns, it is observed that the films have cubic structure with lattice parameters varying with boron concentration. The morphologies of the films were examined by using scanning electron microscopy, and the grain sizes were measured to be around 30-50 nm. Optical measurements show that the band gap energies of the films first decrease then increase with increasing boron concentration. The resistivities of the films were determined by four point probe method, and the changes in resistivity with boron concentration were investigated.
基金supported by the National Basic Research Priorities Program of China (No.2007CB936601)the National Natural Science Foundation of China (Nos.10876017 and 91023037)
文摘In-situ pure TiO2 and Fe-doped TiO2 thin films were synthesized on Ti plates via the micro-arc oxidation (MAO) technique. The as-fabricated anatase TiO2 thin film-based conductometric sensors were employed to measure the gas sensitivity to ethanol. The results showed that Fe ions could be easily introduced into the MAO-TiO2 thin films by adding precursor K4(FeCN)6'3H20 into the NaaPO4 electrolyte. The amount of doped Fe ions increased almost linearly with the concentration of Kg(FeCN)63H20 increasing, eventually affecting the ethanol sensing performances of TiO2 thin films. It was found that the enhanced sensor signals obtained had an optimal concentration of Fe dopant (1.28at%), by which the maximal gas sensor signal to 1000 ppm ethanol was estimated to be 7.91 at 275℃. The response time was generally reduced by doped Fe ions, which could be ascribed to the increase of oxygen vacancies caused by Fe3+ substituting for Ti4+.
文摘This paper reports that ion implantation to a dose of 1 ×10^17 ions/cm^2 was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600 - 900 ℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction (XRD), photoluminescence (PL). It was found that the intensities of (002) peak and near band edge (NBE) exitonic ultraviolet emission increased with increasing annealing temperature from 600- 900 ℃. The defect related deep level emission (DLE) firstly increased with increasing annealing temperature from 600 - 750 ℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at ~850℃ and ~750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 - 900 ℃.
基金supported by the National Natural Science Foundation of China (Nos.50571034 and 50971056) and the State Key Laboratory of Powder Metallurgy,Central South University
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11028409 and 60976061)the Fundamental Research Funds for the Central Universities of China (Grant No. ZYGX2009Z0001)
文摘Barium titanate(BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition(PAD) technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr~ 400 and tan δ 〈 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.