Massive amounts of low-grade tin middlings have been produced from tin tailings,in which arsenic and tin are worthy to be recycled.Owing to high sulfur content in these tin middlings,a novel self-sulfurization roastin...Massive amounts of low-grade tin middlings have been produced from tin tailings,in which arsenic and tin are worthy to be recycled.Owing to high sulfur content in these tin middlings,a novel self-sulfurization roasting was proposed to transform,separate and recover arsenic and tin in this research.There was no extra curing agent to be added,which decreased the formation of pollutant S-containing gas.The self-sulfurization process involved a two-stage roasting of reduction followed by sulfurization.First in reduction roasting,FeAsS decomposed to FeS and As and the As then transformed to As_(4)(g)and As_(4)S_(4)(g),via which the arsenic was separated and recovered.The arsenic content in the first residue could be decreased to 0.72 wt.%.Accompanied with it,the FeS was firstly oxidized to Fe_(1−x)S and then to SO_(2)(g)by the coexisted Fe_(2)O_(3),and finally reduced and combined with the independent Fe_(2)O_(3)to form Fe_(1−x)S.In the followed sulfurization roasting,the Fe_(1−x)S sulfurized SnO_(2)to SnS(g),due to which tin could be recovered and its content in the second residue decreased to 0.01 wt.%.This study provided an efficient method to separate and recover arsenic and tin from low-grade tin middlings.展开更多
The aim of this work is to inventory and study the lignicolous parasitic macrofungi of the Tin plant formation. The mycological outings from July to September 2018 and 2019, collected forty-four (44) basidiomes throug...The aim of this work is to inventory and study the lignicolous parasitic macrofungi of the Tin plant formation. The mycological outings from July to September 2018 and 2019, collected forty-four (44) basidiomes through a random sampling device over an area of 40,000 m2 including 1000 m long by 40 m2 wide. The standard methods and techniques used in mycology for taxonomic studies were used to describe and classify the carpophores collected in three families: Hymenochaetaceae, Ganodermataceae and Polyporaceae, into eight genera: Onnia (4.55%), Amauroderma (4.55%), Ganoderma (20.45%), Phellinus (52.27%), Inonotus (4.55%), Phellinopsis (6.82%), Grammothele (2.27%) and Trametes (4.55%). The genera Phellinus and Ganoderma were the most abundant. Finally, eight species were identified: Inonotus cf. ochroporus, Inonotus cf. pachyphloeus, Phellinus cf. cryptarum, Phellinus cf. hartigii, Phellinus cf. hippophaecola;Phellinus cf. robustus, Phellinus cf. igniarius, et Amauroderma cf. fasciculatum. Seven fungal species belong to the family Hymenochaetaceae and only the species Amauroderma cf. fasciculatum is a Ganodermataceae. However, all these fungal species are shown to be parasites of trunks and/or branches of the following woody: Parkia biglobosa (50%), Anogeissus leiocarpus (25%), Annona senegalensis (12.5%) and Mangifera indica (12.5%). Authors attest that the presence of phytoparasitic polypores in a plant formation is an indicator of aging hence the urgency to put in place the appropriate measures to safeguard and restore Tin’s plant formation.展开更多
The growth of high-quality germanium tin(Ge_(1–y)Sn_(y))binary alloys on a Si substrate using chemical vapor deposition(CVD)techniques holds immense potential for advancing electronics and optoelectronics application...The growth of high-quality germanium tin(Ge_(1–y)Sn_(y))binary alloys on a Si substrate using chemical vapor deposition(CVD)techniques holds immense potential for advancing electronics and optoelectronics applications,including the development of efficient and low-cost mid-infrared detectors and light sources.However,achieving precise control over the Sn concentration and strain relaxation of the Ge_(1–y)Sn_(y)epilayer,which directly influence its optical and electrical properties,remain a significant challenge.In this research,the effect of strain relaxation on the growth rate of Ge_(1–y)Sn_(y)epilayers,with Sn concentration>11at.%,is investigated.It is successfully demonstrated that the growth rate slows down by~55%due to strain relaxation after passing its critical thickness,which suggests a reduction in the incorporation of Ge into Ge_(1–y)Sn_(y)growing layers.Despite the increase in Sn concentration as a result of the decrease in the growth rate,it has been found that the Sn incorporation rate into Ge_(1–y)Sn_(y)growing layers has also decreased due to strain relaxation.Such valuable insights could offer a foundation for the development of innovative growth techniques aimed at achieving high-quality Ge_(1–y)Sn_(y)epilayers with tuned Sn concentration and strain relaxation.展开更多
Buried interfacial voids have always been a notorious phenomenon observed in the fabrication of lead perovskite films. The existence of interfacial voids at the buried interface will capture the carrier, suppress carr...Buried interfacial voids have always been a notorious phenomenon observed in the fabrication of lead perovskite films. The existence of interfacial voids at the buried interface will capture the carrier, suppress carrier transport efficiencies, and affect the stability of photovoltaic devices. However, the impact of these buried interfacial voids on tin perovskites, a promising avenue for advancing lead-free photovoltaics, has been largely overlooked. Here, we utilize an innovative weakly polar solvent pretreatment strategy(WPSPS) to mitigate buried interfacial voids of tin perovskites. Our investigation reveals the presence of numerous voids in tin perovskites during annealing, attributed to trapped dimethyl sulfoxide(DMSO) used in film formation. The WPSPS method facilitates accelerated DMSO evaporation, effectively reducing residual DMSO. Interestingly, the WPSPS shifts the energy level of PEDOT:PSS downward, making it more aligned with the perovskite. This alignment enhances the efficiency of charge carrier transport. As the result, tin perovskite film quality is significantly improved,achieving a maximum power conversion efficiency approaching 12% with only an 8.3% efficiency loss after 1700 h of stability tests, which compares well with the state-of-the-art stability of tin-based perovskite solar cells.展开更多
基金Project(52174384)supported by the National Natural Science Foundation of ChinaProject(LZB2021003)supported by Fundamental Research Funds for the Central Universities,China。
文摘Massive amounts of low-grade tin middlings have been produced from tin tailings,in which arsenic and tin are worthy to be recycled.Owing to high sulfur content in these tin middlings,a novel self-sulfurization roasting was proposed to transform,separate and recover arsenic and tin in this research.There was no extra curing agent to be added,which decreased the formation of pollutant S-containing gas.The self-sulfurization process involved a two-stage roasting of reduction followed by sulfurization.First in reduction roasting,FeAsS decomposed to FeS and As and the As then transformed to As_(4)(g)and As_(4)S_(4)(g),via which the arsenic was separated and recovered.The arsenic content in the first residue could be decreased to 0.72 wt.%.Accompanied with it,the FeS was firstly oxidized to Fe_(1−x)S and then to SO_(2)(g)by the coexisted Fe_(2)O_(3),and finally reduced and combined with the independent Fe_(2)O_(3)to form Fe_(1−x)S.In the followed sulfurization roasting,the Fe_(1−x)S sulfurized SnO_(2)to SnS(g),due to which tin could be recovered and its content in the second residue decreased to 0.01 wt.%.This study provided an efficient method to separate and recover arsenic and tin from low-grade tin middlings.
文摘The aim of this work is to inventory and study the lignicolous parasitic macrofungi of the Tin plant formation. The mycological outings from July to September 2018 and 2019, collected forty-four (44) basidiomes through a random sampling device over an area of 40,000 m2 including 1000 m long by 40 m2 wide. The standard methods and techniques used in mycology for taxonomic studies were used to describe and classify the carpophores collected in three families: Hymenochaetaceae, Ganodermataceae and Polyporaceae, into eight genera: Onnia (4.55%), Amauroderma (4.55%), Ganoderma (20.45%), Phellinus (52.27%), Inonotus (4.55%), Phellinopsis (6.82%), Grammothele (2.27%) and Trametes (4.55%). The genera Phellinus and Ganoderma were the most abundant. Finally, eight species were identified: Inonotus cf. ochroporus, Inonotus cf. pachyphloeus, Phellinus cf. cryptarum, Phellinus cf. hartigii, Phellinus cf. hippophaecola;Phellinus cf. robustus, Phellinus cf. igniarius, et Amauroderma cf. fasciculatum. Seven fungal species belong to the family Hymenochaetaceae and only the species Amauroderma cf. fasciculatum is a Ganodermataceae. However, all these fungal species are shown to be parasites of trunks and/or branches of the following woody: Parkia biglobosa (50%), Anogeissus leiocarpus (25%), Annona senegalensis (12.5%) and Mangifera indica (12.5%). Authors attest that the presence of phytoparasitic polypores in a plant formation is an indicator of aging hence the urgency to put in place the appropriate measures to safeguard and restore Tin’s plant formation.
文摘The growth of high-quality germanium tin(Ge_(1–y)Sn_(y))binary alloys on a Si substrate using chemical vapor deposition(CVD)techniques holds immense potential for advancing electronics and optoelectronics applications,including the development of efficient and low-cost mid-infrared detectors and light sources.However,achieving precise control over the Sn concentration and strain relaxation of the Ge_(1–y)Sn_(y)epilayer,which directly influence its optical and electrical properties,remain a significant challenge.In this research,the effect of strain relaxation on the growth rate of Ge_(1–y)Sn_(y)epilayers,with Sn concentration>11at.%,is investigated.It is successfully demonstrated that the growth rate slows down by~55%due to strain relaxation after passing its critical thickness,which suggests a reduction in the incorporation of Ge into Ge_(1–y)Sn_(y)growing layers.Despite the increase in Sn concentration as a result of the decrease in the growth rate,it has been found that the Sn incorporation rate into Ge_(1–y)Sn_(y)growing layers has also decreased due to strain relaxation.Such valuable insights could offer a foundation for the development of innovative growth techniques aimed at achieving high-quality Ge_(1–y)Sn_(y)epilayers with tuned Sn concentration and strain relaxation.
基金National Natural Science Foundation of China (62274094, 62175117)Natural Science Foundation of Jiangsu Higher Education Institutions (22KJB510011)+1 种基金Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University (KJS2260)Huali Talents Program of Nanjing University of Posts and Telecommunications。
文摘Buried interfacial voids have always been a notorious phenomenon observed in the fabrication of lead perovskite films. The existence of interfacial voids at the buried interface will capture the carrier, suppress carrier transport efficiencies, and affect the stability of photovoltaic devices. However, the impact of these buried interfacial voids on tin perovskites, a promising avenue for advancing lead-free photovoltaics, has been largely overlooked. Here, we utilize an innovative weakly polar solvent pretreatment strategy(WPSPS) to mitigate buried interfacial voids of tin perovskites. Our investigation reveals the presence of numerous voids in tin perovskites during annealing, attributed to trapped dimethyl sulfoxide(DMSO) used in film formation. The WPSPS method facilitates accelerated DMSO evaporation, effectively reducing residual DMSO. Interestingly, the WPSPS shifts the energy level of PEDOT:PSS downward, making it more aligned with the perovskite. This alignment enhances the efficiency of charge carrier transport. As the result, tin perovskite film quality is significantly improved,achieving a maximum power conversion efficiency approaching 12% with only an 8.3% efficiency loss after 1700 h of stability tests, which compares well with the state-of-the-art stability of tin-based perovskite solar cells.
