The full solution-processed oxide thin-film-transistors(TFTs) have the advantages of transparency, ease of large-area fabrication, and low cost, offering great potential applications in switching and driving fields, a...The full solution-processed oxide thin-film-transistors(TFTs) have the advantages of transparency, ease of large-area fabrication, and low cost, offering great potential applications in switching and driving fields, and attracting extensive research interest. However, the performance of the solution-processed TFTs is generally lower than that of the vacuum-deposited ones. In this article, the full-solution processed TFTs with zinc-tin-oxide(ZTO) semiconductor and aluminium(Al_2O_3) dielectrics were fabricated, and their mobilities in the saturation region are high. Besides, the effect of the Al_2O_3 dielectrics' preparation technology on ZTO TFTs' performance was studied. Comparing the ZTO TFTs using the spin-coated Al_2O_3 dielectrics of 1–4 layers, the ZTO TFT with 3-layer Al_2O_3 dielectrics achieved the optimal performance as its field-effect carrier mobility in the saturation region is 112 cm^2/V s, its threshold voltage is 2.4 V, and its on-to-off current ratio is 2.8×105. This is also the highest reported carrier mobility of the solution-processed ZTO TFTs.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.21161160447)
文摘The full solution-processed oxide thin-film-transistors(TFTs) have the advantages of transparency, ease of large-area fabrication, and low cost, offering great potential applications in switching and driving fields, and attracting extensive research interest. However, the performance of the solution-processed TFTs is generally lower than that of the vacuum-deposited ones. In this article, the full-solution processed TFTs with zinc-tin-oxide(ZTO) semiconductor and aluminium(Al_2O_3) dielectrics were fabricated, and their mobilities in the saturation region are high. Besides, the effect of the Al_2O_3 dielectrics' preparation technology on ZTO TFTs' performance was studied. Comparing the ZTO TFTs using the spin-coated Al_2O_3 dielectrics of 1–4 layers, the ZTO TFT with 3-layer Al_2O_3 dielectrics achieved the optimal performance as its field-effect carrier mobility in the saturation region is 112 cm^2/V s, its threshold voltage is 2.4 V, and its on-to-off current ratio is 2.8×105. This is also the highest reported carrier mobility of the solution-processed ZTO TFTs.
