Greatly enhanced corrosion/wear resistances of epoxy coating for Mg alloy through a synergistic effect between functionalized graphene and insulated blocking layer

The poor corrosion and wear resistances of Mg alloys seriously limit their potential applications in various industries.The conventional epoxy coating easily forms many intrinsic defects during the solidification process,which cannot provide sufficient protection.In the current study,we design a double-layer epoxy composite coating on Mg alloy with enhanced anti-corrosion/wear properties,via the spin-assisted assembly technique.The outer layer is functionalized graphene(FG)in waterborne epoxy resin(WEP)and the inner layer is Ce-based conversion(Ce)film.The FG sheets can be homogeneously dispersed within the epoxy matrix to fill the intrinsic defects and improve the barrier capability.The Ce film connects the outer layer with the substrate,showing the transition effect.The corrosion rate of Ce/WEP/FG composite coating is 2131 times lower than that of bare Mg alloy,and the wear rate is decreased by~90%.The improved corrosion resistance is attributed to the labyrinth effect(hindering the penetration of corrosive medium)and the obstruction of galvanic coupling behavior.The synergistic effect derived from the FG sheet and blocking layer exhibits great potential in realizing the improvement of multi-functional integration,which will open up a new avenue for the development of novel composite protection coatings of Mg alloys.

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer

Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency （IQE）. The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.

Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

InGaN based light-emitting diodes （LEDs） with different electron blocking layers have been numerically investi- gated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells （MQWs）.

Improved charge trapping flash device with Al_2O_3 /HfSiO stack as blocking layer

In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon- type （MONOS） memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase （P/E） speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.

Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer

A sawtooth-shaped electron blocking layer is proposed to improve the performance of light-emitting diodes （LEDs）. The energy band diagram, the electrostatic field in the quantum well, the carrier concentration, the electron leakage, and the internal quantum efficiency are systematically studied. The simulation results show that the LED with a sawtooth-shaped electron blocking layer possesses higher output power and a smaller efficiency droop than the LED with a conventional A1GaN electron blocking layer, which is because the electron confinement is enhanced and the hole injection efficiency is improved by the appropriately modified electron blocking layer energy band.

Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers

A new epitaxial structure of AlGaInP-based light-emitting diode（LED） with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide（ITO） and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer（CBL）, respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.

Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits

In GaN-based green light-emitting diodes（LEDs） with and without Mg-preflow before the growth of p-Al GaN electron blocking layer（EBL） are investigated experimentally.A higher Mg doping concentration is achieved in the EBL after Mg-preflow treatment,effectively alleviating the commonly observed efficiency collapse and electrons overflowing at cryogenic temperatures.However,unexpected decline in quantum efficiency is observed after Mg-preflow treatment at room temperature.Our conclusions are drawn such that the efficiency decline is probably the result of different emission positions.Higher Mg doping concentration in the EBL after Mg-preflow treatment will make it easier for a hole to be injected into multiple quantum wells with emission closer to pGaN side through the（8-plane rather than the V-shape pits,which is not favorable to luminous efficiency due to the preferred occurrence of accumulated strain relaxation and structural defects in upper QWs closer to p-GaN.Within this framework,apparently disparate experimental observations regarding electroluminescence properties,in this work,are well reconciled.

Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer

The light output power of an InGaN/GaN light-emitting diode is improved by using a SiO2/TiO2 distributed Bragg reflector （DBR） and an A1 mirror as a hybrid reflective current blocking layer （CBL）. Such a hybrid reflective CBL not only plays the role of the CBL by enhancing current spreading but also plays the role of a reflector by preventing photons near the p electrode pad from being absorbed by a metal electrode. At a wavelength of 455 nm, a 1.5-pair of SiO2/TiO2 DBR and an A1 mirror （i.e. 1.5-pair DBR＋A1） deposited on a p-GaN layer showed a normal-incidence reflectivity as high as 97.8%. With 20 mA current injection, it was found that the output power was 25.26, 24.45, 23.58 and 22.45 mW for the LED with a 1.5-pair DBR＋AI CBL, a 3-pair DBR CBL, SiO2 CBL and without a CBL, respectively.

Influence Factors Analysis of Fe-C Alloy Blocking Layer in the Electromagnetic Induction-Controlled Automated Steel Teeming Technology

In the electromagnetic induction-controlled automated steel teeming(EICAST)technology of ladle,the height and location of the blocking layer are critical factors to determine the structure size and installation location of induction coil.And,they are also the key parameters affecting the successful implementation of this new technology.In this paper,the influence of the liquid steel temperature,the holding time and the alloy composition on the height and location of the blocking layer were studied by numerical simulation.The simulation results were verified by 40 t ladle industrial experiments.Moreover,the regulation approach of the blocking layer was determined,and the determination process of coil size and its installation location were also analyzed.The results show that the location of the blocking layer moves down with the increase in the liquid steel temperature and the holding time.The height of the blocking layer decreases with the increase in the liquid steel temperature;however,it increases with the increase in the holding time.The height and location of the blocking layer can be largely adjusted by changing the alloy composition of filling particles in the upper nozzle.When the liquid steel temperature is 1550℃,the holding time is 180 min and the alloy composition is confirmed,the melting layer height is 120 mm,and the blocking layer height is 129 mm,which are beneficial to design and installation of induction coil.These results are very important for the industrial implementation of the EICAST technology.

MULTILAYER ORGANIC LEDS BASED ON A NEW DYE-DOPED POLYMER

A blue dye, 1-benzqthiazoly-3-phenyl-pyrazoline (BTPP) was found to function as bright light emitting dye in organic electroluminescent devices. This heterocyclic compound exhibits good characteristics of blue photoluminescence and electroluminescence, which has emission peak at 445 nm. The thin films of fluorescent dye dispersed in poly(N-vinylcarbazole) (PVK) could serve as light-emitting layers in multilayer organic LEDs. 2-(4-Biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) and tris-(8-hydroxyquinoline) aluminum (Alq3) were introduced into double-layer and three-layer devices respectively. The introduction of electron transport material Alq3 enhanced the electron injection and luminous efficiency, as compared with double-layer devices. Maximum brightness and luminous efficiency can be reached up to 190 cd/m(2) and 0.31 m/W, respectively.

Geological Characteristics of Potassium-Bearing Salt Layers in the Well Block Quele of the Kuqa Depression and their Significance

Potash is one of the long-term scare deposits in China,and potash prospecting has long been listed as a key brainstorm project for our nation and geological prospecting units.There have been considerable studies in search for potash deposits in the Kuqa depression of the Tarim basin(Jackson et al.,1991;Gemmer et al.,2004;Vendeville,2005;Vendeville and Jackson,1992a,1992b),

Honeycomb-like carbon materials derived from coffee extract via a “salty” thermal treatment for high-performance Li-I2 batteries

Sustainable,conductive,and porous carbon materials are ideal for energy storage materials.In this study,honeycomb-like carbon materials(HCM)are synthesized via a“salty”thermal treatment of abundant and sustainable coffee extract.Systematic materials characterization indicates that the as-prepared HCM consists of heteroatoms(N and O,etc.)doped ultra-thin carbon framework,possesses remarkable specific surface area,and excellent electrical conductivity.Such properties bestow HCM outstanding materials to be the blocking layer for Li-I2 battery,significantly eliminating the dissolution of I2 in the cathode region and stopping the I2 from shutting to anode compartment.Furthermore,our electrochemical investigation suggests that HCM could incur surface pseudo-capacitive iodine-ions charge storage and contribute additional energy storage capacity.As a result,the resultant Li-I2 battery achieves a robust and highly reversible capacity of 224.5 mAh·g−1 at the rate of 10 C.Even under a high rate of 50 C,the remarkable capacity of the as-prepared Li-I2 battery can still be maintained at 120.2 mAh·g−1 after 4000 cycles.

Efficient top-emitting white organic light emitting device with an extremely stable chromaticity and viewing-angle

In this paper,we report on the fabrication of a top-emitting electrophosphorescent p-i-n white organic lightemitting diode on the basis of a low-reflectivity Sm/Ag semi-transparent cathode together with a thickness-optimized ZnS out-coupling layer.With a 24-nm out-coupling layer,the reflectivity of the cathode is reduced to 8% at 492 nm and the mean reflectivity is 24% in the visible area.By introducing an efficient electron blocking layer tris（1phenylpyrazolato,N,C2 ＇）iridium（III）（Ir（ppz） 3） to confine the exciton recombination area,the current efficiency and the colour stability of the device are effectively improved.A white emission with the Ir（ppz） 3 layer exhibits a maximum current efficiency of 9.8 cd/A at 8 V,and the Commission Internationale de L＇Eclairage（CIE） chromaticity coordinates are almost constant during a large voltage change of 6 V-11 V.There is almost no viewing angular dependence in the spectrum when the viewing angle is no more than 45,with a CIE x,y coordinate variation of only（±0.0025,±0.0008）.Even at a large viewing angle（75）,the CIE x,y coordinate change is as small as（±0.0087,±0.0013）.

High Efficiency Blue Phosphorescent Organic Lighting-emitting Diodes with Novel Anode Structure

High-efficiency blue electrophosphorescent organic light-emitting devices employing MoO3 used as hole injection layer （HIL） and MoO3 doped N,N-dicarbazoly-3,5-benzene （mCP） as hole transport layer （HTL） were demonstrated. The blue OLED with the novel anode structure and TAPC used as electron blocking layer show a low turn-on voltage of 2.4 V, a maximum power efficiency of 33.6 lm/W at 3.1 V and 25 lrn/W with 1 000 cd/m2 at 3.8 V. It is also found that the efficiency of the devices is dependent on the different EBL materials. This is may because of relationship with the charge mobility and the triplet energy level of EBL materials. The device efficiency is determined by the charge balance which plays an important role.

Large Aperture Low Threshold Current 980nm VCSELs Fabricated with Pulsed Anodic Oxidation

Pulsed anodic oxidation technique, a new way of forming current blocking layers, was successfully used in ridge-waveguide QW laser fabrication. This method was applied in 980 nm VCSELs fabrication to form a high-quality native oxide current blocking layer, which simplifies the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500 μm diameter device has a current threshold as low as 0.48 W. The maximum CW operation output power at room temperature is 1.48 W. The lateral divergence angle θ‖ and vertical divergence angle θ⊥ are as low as 15.3° and 13.8° without side-lobes at a current of 6 A.

On the physical model of earthquake precursor fields and the mechanism of precursors＇timespace distribution──origin and evidences of the strong body earthquake──generating model

According to the requirement of the project 'Establishment of the Physical Model of Earthquake PrecursorFields',this paper elucidates the train of thinking for research on the project and some scientific problems whichmust be studied i, the elucidation emphasizes that the core of this project is to study the conditions and processesof the generation of strong earthquakes. The paper first outlines the origin and development of the'strong-bodyearthquake-generating model' proposed by the author in the 1980;and then proves the reasonableness of themodel from three aspects, namely: deep structures, mechanical analysis and rock fracture experiments. Bystudying the tomographic image for the northern part of North China, it can be seen that the sources of strongearthquakes are all distributed in high-velocity bodies,or in the contact zone between high-velocity and lowvelocity bodies but nearer to the high-velocity body. It has been affirmed through studies of the mechanical modelsof hard and soft inclusions that the existence of a hard inclusion is an imPOrtant condition for the high concentration of large amounts of strain energy. A lot of theoretical and experimental studies have been made to investigate the conditions for rock instability; the results have consistently indicated that rock instability,sudden fracture and stress drop would be possible only if the stiffness of the source body is greater than the environmentalstiffness.

Mathematical Modeling Algorithms for Creating New Materials with Desired Properties Using Nano-Hierarchical Structures

In the enormous and still poorly mastered gap between the macro level, where well developed continuum theories of continuous media and engineering methods of calculation and design operate, and atomic, subordinate to the laws of quantum mechanics, there is an extensive meso-hierarchical level of the structure of matter. At this level unprecedented previously products and technologies can be artificially created. Nano technology is a qualitatively new strategy in technology: it creates objects in exactly the opposite way—large objects are created from small ones [1]. We have developed a new method for modeling acoustic monitoring of a layered-block elastic medium with several inclusions of various physical and mechanical hierarchical structures [2]. An iterative process is developed for solving the direct problem for the case of three hierarchical inclusions of l, m, s-th ranks based on the use of 2D integro-differential equations. The degree of hierarchy of inclusions is determined by the values of their ranks, which may be different, while the first rank is associated with the atomic structure, the following ranks are associated with increasing geometric sizes, which contain inclusions of lower ranks and sizes. Hierarchical inclusions are located in different layers one above the other: the upper one is abnormally plastic, the second is abnormally elastic and the third is abnormally dense. The degree of filling with inclusions of each rank for all three hierarchical inclusions is different. Modeling is carried out from smaller sizes to large inclusions;as a result, it becomes possible to determine the necessary parameters of the formed material from acoustic monitoring data.

Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath

Insertion of a C-containing layer in a metal/Ge structure,using a chemical bath,enabled the Schottky barrier height（SBH） to be modulated.Chemical baths with 1-octadecene,1-hexadecene,1-tetradecene,and 1- dodecene were used separately with Ge substrates.An ultrathin C-containing layer stops the penetration of free electron wave functions from the metal to the Ge.Metal-induced gap states are alleviated and the pinned Fermi level is released.The SBH is lowered to 0.17 eV.This new formation method is much less complex than traditional ones,and the result is very good.

Optical and electrical characteristics of GaN vertical light emitting diode with current block layer

A GaN vertical light emitting diode（LED）with a current block layer（CBL）was investigated.Vertical LEDs without a CBL,with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated.Optical and electrical tests were carried out.The results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are 40.6%and 60.7%higher than that of vertical LEDs without a CBL at 350 mA,respectively.The efficiencies of vertical LEDs without a CBL,with a non-ohmic contact CBL and with a silicon dioxide CBL drop to 72%,78%and 85.5%of their maximum efficiency at 350 mA,respectively. Moreover,vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability.