A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation i...A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.展开更多
WITH the rapid development of the technique of ionized atoms, the charge states of atoms that can be obtained now are so high that the H-like U<sup>91+</sup> ions and naked U<sup>92+</sup> ions
Point defects in the crystal lattice of SiC,known as color centers,have recently emerged as one of the most promising single-photon emitters for non-classical light sources.However,the search for the best color center...Point defects in the crystal lattice of SiC,known as color centers,have recently emerged as one of the most promising single-photon emitters for non-classical light sources.However,the search for the best color center that satisfies all the requirements of practical applications has only just begun.Many color centers in SiC have been recently discovered but not yet identified.Therefore,it is extremely challenging to understand their optoelectronic properties and evaluate their potential for use in practical single-photon sources.Here,we present a theoretical approach that explains the experiments on single-photon electroluminescence(SPEL)of novel color centers in SiC p-i-n diodes and gives the possibility to engineer highly efficient single-photon emitting diodes based on them.Moreover,we develop a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence.Unlike other methods,the developed approach uses the experimental results at the single defect level that can be easily obtained as soon as a single-color center is identified in the i-type region of the SiC p-i-n diode.展开更多
文摘A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.
文摘WITH the rapid development of the technique of ionized atoms, the charge states of atoms that can be obtained now are so high that the H-like U<sup>91+</sup> ions and naked U<sup>92+</sup> ions
基金supported by the RFBR and DFG(project 19-57-12008)the Ministry of Science and Higher Education of the Russian Federation(0714-2020-0002)。
文摘Point defects in the crystal lattice of SiC,known as color centers,have recently emerged as one of the most promising single-photon emitters for non-classical light sources.However,the search for the best color center that satisfies all the requirements of practical applications has only just begun.Many color centers in SiC have been recently discovered but not yet identified.Therefore,it is extremely challenging to understand their optoelectronic properties and evaluate their potential for use in practical single-photon sources.Here,we present a theoretical approach that explains the experiments on single-photon electroluminescence(SPEL)of novel color centers in SiC p-i-n diodes and gives the possibility to engineer highly efficient single-photon emitting diodes based on them.Moreover,we develop a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence.Unlike other methods,the developed approach uses the experimental results at the single defect level that can be easily obtained as soon as a single-color center is identified in the i-type region of the SiC p-i-n diode.
