Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy

We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers.The experimental results show that there are photo-generated carriers in GeSn under femtosecond laser excitation at 2500 nm,and its pump-induced photoconductivity can be explained by the Drude–Smith model.The carrier recombination process is mainly dominated by defect-assisted Auger processes and defect capture.The firstand second-order recombination rates are obtained by the rate equation fitting,which are(2.6±1.1)×10^(-2)ps^(-1)and(6.6±1.8)×10^(-19)cm^(3)·ps^(-1),respectively.Meanwhile,we also obtain the diffusion length of photo-generated carriers in GeSn,which is about 0.4μm,and it changes with the pump delay time.These results are important for the GeSn-based infrared optoelectronic devices,and demonstrate that Ge Sn materials can be applied to high-speed optoelectronic detectors and other applications.

Enhancing betavoltaic nuclear battery performance with 3D P^(+)PNN^(+)multi-groove structure via carrier evolution

Betavoltaic nuclear batteries offer a promising alternative energy source that harnesses the power of beta particles emitted by radioisotopes.To satisfy the power demands of microelectromechanical systems(MEMS),3D structures have been proposed as a potential solution.Accordingly,this paper introduces a novel 3D^(63)Ni–SiC-based P^(+)PNN^(+)structure with a multi-groove design,avoiding the need for PN junctions on the inner surface,and thus reducing leakage current and power losses.Monte Carlo simulations were performed considering the fully coupled physical model to extend the electron–hole pair generation rate to a 3D structure,enabling the efficient design and development of betavoltaic batteries with complex 3D structures.As a result,the proposed model produces the significantly higher maximum output power density of 19.74μW/cm^(2) and corresponding short-circuit current,open-circuit voltage,and conversion efficiency of 8.57μA/cm^(2),2.45 V,and4.58%,respectively,compared with conventional planar batteries.From analysis of the carrier transport and collection characteristics using the COMSOL Multiphysics code,we provide deep insights regarding power increase,and elucidate the discrepancies between the ideal and simulated performances of betavoltaic batteries.Our work offers a promising approach for the design and optimization of high-output betavoltaic nuclear batteries with a unique 3D design,and serves as a valuable reference for future device fabrication.

Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films

Influence of recombination centers’ changes on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombination centers.

Effects of BTA2 as the third component on the charge carrier generation and recombination behavior of PTB7:PC71BM photovoltaic system

Effects of a benzotriazole(BTA)-based small molecule,BTA2,as the third component on the charge carrier generation and recombination behavior of poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]](PTB7):[6,6]-phenyl-C71-butyric acid methyl ester(PC71BM)organic solar cells(OSCs)were investigated by optical simulation of a transfer matrix model(TMM),photo-induced charge extraction by linearly increasing voltage(photo-CELIV)technique,atomic force microscope(AFM),and the Onsager–Braun model analysis.BTA2 is an A_(2)-A_(1)-D-A_(1)-A_(2)-type non-fullerene small molecule with thiazolidine-2,4-dione,BTA,and indacenodithiophene as the terminal acceptor(A_(2)),bridge acceptor(A_(1)),and central donor(D),respectively.The short-circuit current density of the OSCs with BTA2 can be enhanced significantly owing to a complementary absorption spectrum.The optical simulation of TMM shows that the ternary OSCs exhibit higher internal absorption than the traditional binary OSCs without BTA2,resulting in more photogenerated excitons in the ternary OSCs.The photo-CELIV investigation indicates that the ternary OSCs suffer higher charge trap-limited bimolecular recombination than the binary OSCs.AFM images show that BTA2 aggravates the phase separation between the donor and the acceptor,which is disadvantageous to charge carrier transport.The Onsager-Braun model analysis confirms that despite the charge collection efficiency of the ternary OSCs being lower than that of the binary OSCs,the optimized photon absorption and exciton generation processes of the ternary OSCs achieve an increase in photogenerated current and thus improve power conversion efficiency.

Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device

It is still a great challenge for semiconductor based-devices to obtain a large magnetoresistance（MR） effect under a low magnetic field at room temperature. In this paper, the photoinduced MR effects under different intensities of illumination at room temperature are investigated in a semi-insulating gallium arsenide（SI-Ga As）-based Ag/SI–Ga As/Ag device. The device is subjected to the irradiation of light which is supplied by light-emitting diode（LED） lamp beads with a wavelength in a range of about 395 nm–405 nm and the working power of each LED lamp bead is about 33 mW. The photoinduced MR shows no saturation under magnetic fields（B） up to 1 T and the MR sensitivity S（S = MR/B） at low magnetic field（B = 0.001 T） can reach 15 T^（-1）. It is found that the recombination of photoinduced electron and hole results in a positive photoinduced MR effect. This work implies that a high photoinduced S under a low magnetic field may be obtained in a non-magnetic semiconductor device with a very low intrinsic carrier concentration.

How to get high-efficiency lead chalcogenide quantum dot solar cells?

Lead chalcogenide colloidal quantum dots(CQDs)are regarded as attractive absorption materials for novel solar cells(SCs).The cost of lead chalcogenide CQD has been decreased to a commercialization target of$5/g due to the direct production of CQD inks.However,the photoelectric conversion efficiency(PCE)of lead chalcogenide CQDSCs is presently close to 14%,well below the commercialization target(20%),which is only 41%of the theoretical Shockley-Queisser limit efficiency.In this study,the different losses of open-circuit voltage(V_(oc)),fill factor(FF),and short circuit current density(J_(sc))for current CQDSCs are systematically discussed,as well as the percentage and likely causes of each loss.Then the primary reasons for the CQDSCs’performance constraints are highlighted.Following that,we focus on the CQDSCs interfaces(i.e.,CQD/CQD,CQD/HTL,and ETL/CQD)and explore viable ways to reduce device performance loss.Finally,based on the discussion above,we propose many enhancements to significantly solve numerous major obstacles impeding device performance to boost the PCE of CQDSCs for future commercialization significantly.

Multifunctional anchoring of O-ligands for high-performance and stable inverted perovskite solar cells

Functional additives have recently been regarded as emerging candidates to improve the performance and stability of perovskite solar cells(PSCs).Herein,nicotinamide(N),2-chloronicotinamide(2Cl),and 6-chloronicotinamide(6Cl)were employed as O-ligands to facilitate the deposition of MAPbI_(3)(MA=methylammonium)and MA-free FA_(0.88)Cs_(0.12)PbI_(2.64)Br_(0.36)(FA=formamidinium)perovskite films by multifunctional anchoring.By density functional theory(DFT)calculations and ultraviolet photoelectron spectroscopy(UPS)measurements,it is identified that the highest occupied molecular orbital(HOMO)level for additive modified MAPbI_(3)perovskite could reduce the voltage deficit for hole extraction.Moreover,due to the most favorable charge distribution and significant improvements in charge mobility and defect passivation,the power conversion efficiency(PCE)of 2Cl-MAPbI_(3)PSCs was significantly improved from 19.32%to 21.12%.More importantly,the two-dimensional grazing-incidence wide-angle X-ray scattering(GIWAXS)analysis showed that PbI_(2) defects were effectively suppressed and femtosecond transient absorption(TA)spectroscopy demonstrated that the trap-assisted recombination at grain boundaries was effectively inhibited in the 2Cl-MA-free film.As a result,the thermally stable 2Cl-MA-free PSCs achieved a remarkable PCE of 23.13%with an open-circuit voltage(V_(oc))of 1.164 V and an ultrahigh fill factor(FF)of 85.7%.Our work offers a practical strategy for further commercializing stable and efficient PSCs.

CsPbI nanorods as the interfacial layer for high-performance,all-solution-processed self-powered photodetectors

Heterojunction is regarded as a crucial step toward realizing high-performance devices,particularly,forming gradient energy band between heterojunctions benefits self-powered photodetectors.Therefore,in this paper,the synthesis of CsPbI3 nanorods(NRs)and its application as the interfacial layer in high-performance,all-solution-processed self-powered photodetectors are presented.For the bilayer photodetector ITO/ZnO(100 nm)/PbS-TBAI(150 nm)/Au,a responsivity of 3.6 A/W with a specific detectivity of 9.8×10^(12)Jones was obtained under 0.1 mW/cm^(2)white light illumination at zero bias(i.e.in self-powered mode).Meanwhile,the photocurrent was enhanced to an On/Off current ratio of 105 at zero bias with an open circuit voltage of 0.53 V for trilayer photodetector ITO/ZnO(100 nm)/PbSTBAI(150 nm)/CsPbI3(250 nm)/Au,in which the CsPbI3 NRs layer works as the interfacial layer.As a result,a specific detectivity of 4.5×10^(13)Jones with a responsivity of 11.12 A/W was obtained under0.1 mW/cm^(2) white light illumination,as well as the rising/decaying time of 0.57 s/0.41 s with excellent stability and reproducibility upto four weeks in air.The enhanced-performance is ascribed to the mismatch bandgap between PbS-TBAI/CsPbI_(3)interface,which can suppress the carrier recombination and provide efficient transport passages for charge carriers.Thus,it provides a feasible and efficient method for high-performance photodetectors.

High temperature characterization of double base epilayer 4H-SiC BJTs

Based on the material characteristics and the operational principle of the double base epilayer BJTs,and according to the drift-diffusion and the carrier recombination theory,the common emitter current gain is calculated considering four recombination processes.Then its performance is analyzed under high temperature conditions.The results show that the emitter injection efficiency decreases due to an increase in the base ionization rate with increasing temperature.Meanwhile,the SiC/SiO2 interface states and the quality of the passivation layer will affect the surface recombination velocity,and make an obvious current gain fall-off at a high collector current.

GaN-based LEDs for light communication

Rapid improvement in the efficiency of GaN-based LEDs not only speed up its applications for general illumination, but offer the possibilities for data transmission. This review is to provide an overview of current progresses of GaN-based LEDs for light communications. The modulation bandwidth of GaN-based LEDs has been first improved by optimizing the LED epilayer structures and the modulation bandwidth of 73 MHz was achieved at the driving current density of 40 A/cm2 by changing the multi-quantum well structures. After that, in order to increase the current density tolerance, different parallel flip-chip micro-LED arrays were fabricated. With a high injected current density of ~7900 A/cm2, a maximum modulation bandwidth of ~227 MHz was obtained with optical power greater than 30 mW. Besides the increase of carrier concentrations, the radiative recombination coefficient B was also enhanced by modifying the photon surrounding environment based on some novel nanostructures such as resonant cavity, surface plasmon, and photonic crystals. The optical 3 dB modulation bandwidth of GaN-based nanostructure LEDs with Ag nanoparticles was enhanced by 2 times compared with GaN-based nanostructure LEDs without Ag nanoparticles.Our results demonstrate that using the QW-SP coupling can effectively help to enhance the carrier spontaneous emission rate and also increase the modulation bandwidth for LEDs, especially for LEDs with high intrinsic IQE. In addition, we discuss the progress of the faster color conversion stimulated by GaN-based LEDs.