Dielectric loss enhancement induced by the microstructure of CoFe_(2)O_(4) foam to realize broadband electromagnetic wave absorption

CoFe_(2)O_(4)has been widely used for electromagnetic wave absorption owing to its high Snoek limit,high anisotropy,and suitable saturation magnetization;however,its inherent shortcomings,including low dielectric loss,high density,and magnetic agglomeration,limit its application as an ideal absorbent.This study investigated a microstructure regulation strategy to mitigate the inherent disadvantages of pristine CoFe_(2)O_(4)synthesized via a sol–gel auto-combustion method.A series of CoFe_(2)O_(4)foams(S0.5,S1.0,and S1.5,corresponding to foams with citric acid(CA)-to-Fe(NO_(3))_(3)·9H_(2)O molar ratios of 0.5,1.0,and 1.5,respectively)with two-dimensional(2D)curved surfaces were obtained through the adjustment of CA-to-Fe^(3+)ratio,and the electromagnetic parameters were adjusted through morphology regulation.Owing to the appropriate impedance matching and conductance loss provided by moderate complex permittivity,the effective absorption bandwidth(EAB)of S0.5 was as high as 7.3 GHz,exceeding those of most CoFe_(2)O_(4)-based absorbents.Moreover,the EAB of S1.5 reached 5.0 GHz(8.9–13.9 GHz),covering most of the X band,owing to the intense polarization provided by lattice defects and the heterogeneous interface.The three-dimensional(3D)foam structure circumvented the high density and magnetic agglomeration issues of CoFe_(2)O_(4)nanoparticles,and the good conductivity of 2D curved surfaces could effectively elevate the complex permittivity to ameliorate the dielectric loss of pure CoFe_(2)O_(4).This study provides a novel idea for the theoretical design and practical production of lightweight and broadband pure ferrites.

Small Rb^+ Doping in CaCu_3Ti_4O_(12)——A Possible Approach to Reduce Dielectric Loss

Ca1-xRbxCu3Ti4O12 （x=0, 0.01, 0.02 and 0.03） ceramics were synthesized by the sol-gel method. Doping Rb＋ reduces dielectric loss, which reaches minimum when x=0.02. By measuring properties of electrical conduction, larger leakage current density and height of grain-boundary Sehottky potential barrier （φB） were found in the doped samples, and φB became maximum when x=0.02. These results are attributed to the increase in the amount of oxygen vacancies and the formation of Cu-rich/Ti-poor grain-boundary layers, and it can be concluded that the dielectric loss in CCTO ceramic can be reduced by manipulating the composition and electrical properties of grain boundary.

Dielectric loss of half-doped manganite La_(0.5)Ca_(0.5)MnO_3

The dielectric loss tanfi of half-doped manganite Lao.sCao.sMnO3 is investigated using Green＇s function technique. The Lao.sCao.sMnO3 is described by the Kondo-lattice model in the double exchange limit, taking into account the Jahn- Teller distortion and the super-exchange interaction between the localized electrons. It is found that the intensity of tans decreases with increasing [e]TI, V, and U. It is also observed that the transition temperature Tp rises as l eJTI and U increase. It is worth noting that Tp remains unchanged and the strength of tans increases with increasing g. The calculated dielectric loss results are explained theoretically, and these behaviors are in qualitative agreement with the experimental results.

Test and analysis of the influence of the transformer insulation resistance and dielectric loss

In view of long-term transformer insulation resistance and dielectric loss measurement, measurement and according to the national standard formula conversion values are not completely consistent, in this paper, a variety of transformers are studied, and the applicable scope of the conversion formula is discussed emphatically, combined with the test results are analyzed of transformer insulation resistance value to temperature and oiliness and dielectric loss tangent to temperature and oiliness, and puts forward suggestions on how to improve the insulation performance of transformer.

Design and synthesis of liquid crystal copolyesters with high-frequency low dielectric loss and inherent flame retardancy

Ultra-low dielectric loss(Df)and low dielectric constant(Dk)materials are urgently required in highspeed and large-capacity transmission,in which the wholly aromatic liquid crystal polymer(LCP)has gained attention due to its excellent dielectric properties.However,the relationship between molecular structure and dielectric properties is still not clear.In this study,two copolyesters containing phenyl or naphthyl structures are synthesized,as well as the effects of benzene and naphthalene mesogens on dielectric properties are investigated.The synthesized copolyesters containing naphthalene structure have good comprehensive properties with high thermal stability(T_(5%)=479℃ and T_g=195-216℃),inherent flame retardance(LOI=33.0-35.0 and UL-94 V-0 level at 0.8 mm),low Dk(2.9-3.0@10 GHz)and low Df(0.0027-0.0047@10 GHz).Naphthalene mesogen can reduce the dielectric loss more significantly than benzene at high frequency by reducing the density and mobility of polarizable groups,which leads to the effectively limited dipole polarization in copolyesters.Consequently,we proposed a new strategy for designing low Dk and low Df materials.

Super-stable permittivity and low dielectric loss of(1-x)Na_(0.5)Bi_(0.5+y)TiO_(3-x)NaTaO_(3)ceramics within an ultra-wide temperature range

This work designs a new system(1-x)Na_(0.5)Bi_(0.5+y)TiO_(3-x)NaTaO_(3)with a nonstoichiometric bismuth ratio,which is used as dielectrics of ceramics capacitors.Phase structure evolution of(1-x)Na_(0.5)Bi_(0.5+y)TiO_(3-x)NaTaO_(3)is characterized using XRD,Raman and TEM.Dielectric and resistant properties of(1-x)Na_(0.5)Bi_(0.5+y)TiO_(3-x)NaTaO_(3)are investigated with increasing concentration of NaTaO_(3).With these in-vestigations,the structure and defect chemistry of(1-x)Na_(0.5)Bi_(0.5+y)TiO_(3-x)NaTaO_(3)are rationalized and their respective impact on capacitor properties are elucidated.The optimized composition 0.8Na_(0.5)Bi_(0.51)TiO_(3)-0.2NaTaO_(3)possesses an ultra-wide operating temperature range(-92e398C),in which both stable permittivity and low dielectric loss is obtained.Furthermore,the fabrication of multilayer ceramics capacitors(MLCC)based on 0.8Na_(0.5)Bi_(0.51)TiO_(3)-0.2NaTaO_(3)dielectrics is investigated.With the addition of sintering aids,0.8Na_(0.5)Bi_(0.51)TiO_(3)-0.2NaTaO_(3)could be co-fired with Ag at 910℃in air,and the low temperature co-fired ceramic(LTCC)capacitors maintain good temperature stability of permittivity and low dielectric loss in-100-352℃.Therefore,our work provides a new route for pre-paring ultra-wide operating temperature capacitors at low manufacturing costs.

Colossal permittivity and ultralow dielectric loss in Nb-doped SrTiO_(3) ceramics

Defect engineering has been applied to prepare materials with modifiable dielectric properties.SrTiNbxO3(x=0,0.003,0.006,0.009,0.012)ceramics were synthesized using the traditional solid-state reaction method and sintered in a reducing atmosphere.All samples show excellent dielectric properties with giant permittivity(>3.5×10^(4))and low dielectric loss(<0.01).SrTiNb0.003O3 ceramic exhibits a colossal permittivity of 4.6×10^(4)and an ultralow dielectric loss of 0.005(1 kHz,room temperature)as well as great temperature stability in the range of(−60)–160℃.The mechanism of the presented colossal permittivity(CP)properties is investigated by conducting X-ray photoelectron spectroscopy(XPS)and analyzing activation energies.The results indicate that the introduction of Nb5+and the reducing sintering atmosphere together generated the formation of Ti^(3+)and V_(O)^(**).These defects further form Ti-V_(O)^(**)-Ti'_(Ti)defect dipoles,contributing to the coexisting giant permittivity and low dielectric loss in Nb-doped SrTiO_(3)(STN)ceramics.

Evolution of dielectric loss-dominated electromagnetic patterns in magnetic absorbers for enhanced microwave absorption performances

As the growing criterion of electromagnetic wave (EMW) absorption materials, micro/nano-scale magnetic materials are drawing more and more attention for their unique features compared to bulky absorbers. Generally, the complex permeability of micro/nano-scale magnetic absorbers varies in a relatively narrow range, whatever for the storage of magnetic energy or the dissipation of magnetic energy. If so, how the small variation of permeability affects the ultimate performances is still unclear. Here, a strategy of electromagnetic parameters regulation for the magnetic materials is applied to understand the loss contribution in micro/nanoscale magnetic absorbers. After analyzing the evolution of electromagnetic maps of ten ferrosoferric oxide samples, it can be found that the dissipation contribution of permeability for magnetic materials is weaker than that of permittivity, in spite of its significant role in determining the impedance matching characteristics. In summary, this work systematically explores the loss contribution in micro/nano-magnetic absorbers for the first time, which is of great importance in designing and optimizing the microwave absorption properties of magnetic absorbers.

Frequency dispersion investigation of output reactance and capacitance in GaAs MESFETs by means of dielectric loss tangent consideration

The aim of this article is to investigate the effect of dielectric loss tangent on frequency dispersion of output reactance and capacitance in GaAs MESFETs.For this purpose,measurements of output impedance modulus and phase have been carried out within a frequency range of 10 Hz to 10 kHz,and various voltage values of gatesource（Vgs= 0,-0.2,-0.3,-0.35,-0.4,-0.45,-0.5 and-0.6 V） and drain-source（Vds= 0.7,0.9,1,1.5and 2 V） Based on the concept of complex permittivity of semiconductor material,complex capacitance is used to analyze and simulate frequency dispersion of output reactance and capacitance of GaAs MESFETs.The results show that conductor losses which dominate the dielectric loss tangent are attributed to trapping mechanisms at the interface of devices;so they influence the frequency dispersion of output reactance and capacitance in particular at low frequencies.This reveals that frequency dispersion of these parameters is also related to dielectric loss tangent of semiconductor materials which affects the response of electronic devices according to frequency variation.

Ultrafine Vacancy-Rich Nb_(2)O_(5)Semiconductors Confined in Carbon Nanosheets Boost Dielectric Polarization for High-Attenuation Microwave Absorption

The integration of nano-semiconductors into electromagnetic wave absorption materials is a highly desirable strategy for intensifying dielectric polarization loss;achieving high-attenuation microwave absorption and realizing in-depth comprehension of dielectric loss mechanisms remain challenges.Herein,ultrafine oxygen vacancy-rich Nb_(2)O_(5)semiconductors are confined in carbon nanosheets(ov-Nb_(2)O_(5)/CNS)to boost dielectric polarization and achieve high attenuation.The polarization relaxation,electromagnetic response,and impedance matching of the ov-Nb_(2)O_(5)/CNS are significantly facilitated by the Nb_(2)O_(5)semiconductors with rich oxygen vacancies,which consequently realizes an extremely high attenuation performance of-80.8 dB(>99.999999%wave absorption)at 2.76 mm.As a dielectric polarization center,abundant Nb_(2)O_(5)–carbon heterointerfaces can intensify interfacial polarization loss to strengthen dielectric polarization,and the presence of oxygen vacancies endows Nb_(2)O_(5)semiconductors with abundant charge separation sites to reinforce electric dipole polarization.Moreover,the three-dimensional reconstruction of the absorber using microcomputer tomography technology provides insight into the intensification of the unique lamellar morphology regarding multiple reflection and scattering dissipation characteristics.Additionally,ov-Nb_(2)O_(5)/CNS demonstrates excellent application potential by curing into a microwave-absorbing,machinable,and heat-dissipating plate.This work provides insight into the dielectric polarization loss mechanisms of nano-semiconductor/carbon composites and inspires the design of high-performance microwave absorption materials.

Absorption properties and mechanism of lightweight and broadband electromagnetic wave-absorbing porous carbon by the swelling treatment

Bioderived carbon materials have garnered considerable interest in the fields of microwave absorption and shielding due to their reproducibility and environmental friendliness.In this study,KOH was evenly distributed on biomass Tremella using the swelling induction method,leading to the preparation of a three-dimensional network-structured hierarchical porous carbon(HPC)through carbonization.The achieved microwave absorption intensity is robust at-47.34 dB with a thin thickness of 2.1 mm.Notably,the widest effective absorption bandwidth,reaching 7.0 GHz(11–18 GHz),is attained at a matching thickness of 2.2 mm.The exceptional broadband and reflection loss performance are attributed to the 3D porous networks,interface effects,carbon network defects,and dipole relaxation.HPC has outstanding absorption characteristics due to its excellent impedance matching and high attenuation constant.The uniform pore structures considerably optimize the impedance-matching performance of the material,while the abundance of interfaces and defects enhances the dielectric loss,thereby improving the attenuation constant.Furthermore,the impact of carbonization temperature and swelling rate on microwave absorption performance was systematically investigated.This research presents a strategy for preparing absorbing materials using biomass-derived HPC,showcasing considerable potential in the field of electromagnetic wave absorption.

Tracking Regulatory Mechanism of Trace Fe on Graphene Electromagnetic Wave Absorption

Polarization and conductance losses are the fundamental dielectric attenuation mechanisms for graphene-based absorbers, but it is not fully understood in revealing the loss mechanism of affect graphene itself. For the first time, the reduced graphene oxide(RGO) based absorbers are developed with regulatory absorption properties and the absorption mechanism of RGO is mainly originated from the carrier injection behavior of trace metal Fe nanosheets on graphene. Accordingly, the minimum reflection loss(RLmin) of Fe/RGO-2composite reaches-53.38 dB(2.45 mm), and the effective absorption bandwidth achieves 7.52 GHz(2.62 mm) with lower filling loading of 2 wt%. Using off-axis electron hologram testing combined with simulation calculation and carrier transport property experiments, we demonstrate here the carrier injection behavior from Fe to graphene at the interface and the induced charge accumulation and rearrangement, resulting in the increased interfacial and dipole polarization and the conductance loss. This work has confirmed that regulating the dielectric property of graphene itself by adding trace metals can not only ensure good impedance matching, but also fully exploit the dielectric loss ability of graphene at low filler content,which opens up an efficient way for designing lightweight absorbers and may be extended to other types materials.

Effect of Cu ion substitution on structural and dielectric properties of Ni-Zn ferrites

A series of Cu-substituted Ni_(0.5-x)Cu_xZn_(0.5)Fe_2O_4(x=0.12,0.16,0.20,0.24 and 0.28) spinel ferrites were prepared by conventional ceramic method to investigate the effects of Cu compositional variation on the structure and dielectric properties.XRD patterns demonstrate that all the samples are crystallized in single-phase cubic spinel structure and the lattice constant increases with increasing Cu content.White grains observed by SEM are Cu-rich phase.The dielectric constant versus frequency curve displays a normal dielectric behavior of spinel ferrites.While the frequency dependence of dielectric loss tangent is found to be abnormal,exhibiting a peak at certain frequency for all Cu-substituted Ni-Zn ferrites.A maximum of the resistivity is observed at x=0.2 due to the decrease of hopping electrons between Fe^(2+) and Fe^(3+) in per unit volume,which is in contrast with the Cu content dependence of dielectric constant and dielectric loss.

In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits

The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface,where Nb2O5 is considered the main loss source.Here,we suppress the formation of native oxides by in-situ deposition of a TiN capping layer on the Nb film.With TiN capping layers,no Nb2O5 forms on the surface of the Nb film.The quality factor Qi of the Nb resonator increases from 5.6×10^(5) to 7.9×10^(5) at low input power and from 6.8×10^(6) to 1.1×10^(7)at high input power.Furthermore,the TiN capping layer also shows good aging resistance in Nb resonator devices,with no significant performance fluctuations after one month of aging.These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.

TiN/Fe_(2)N/C composite with stable and broadband high-temperature microwave absorption

Facing the complex variable high-temperature environment,electromagnetic wave(EMW)absorbing materials maintaining high stability and satisfying absorbing properties is essential.This study focused on the synthesis and EMW absorbing performance evaluation of TiN/Fe_(2)N/C composite materials,which were prepared using electrostatic spinning followed by a high-temperature nitridation process.The TiN/Fe_(2)N/C fibers constructed a well-developed conductive network that generates considerable conduction loss.The heterogeneous interfaces between different components generated a significant level of interfacial polarization.Thanks to the synergistic effect of stable dielectric loss and optimized impedance matching,the TiN/Fe_(2)N/C composite materials demonstrated excellent and stable absorption performance across a wide temperature range(293-453 K).Moreover,TiN/Fe_(2)N/C-15 achieved a minimum reflection loss(RL)of−48.01 dB and an effective absorption bandwidth(EAB)of 3.64 GHz at 2.1 mm and 373 K.This work provides new insights into the development of high-efficiency and stabile EMW absorbing materials under complex variable high-temperature conditions.

Dielectric properties of spark plasma sintered AlN/SiC composite ceramics

In this study, we have investigated how the dielectric loss tangent and permittivity of AlN ceramics are affected by factors such as powder mixing methods, milling time, sintering temperature, and the addition of a second conductive phase. All ceramic samples were pre-pared by spark plasma sintering （SPS） under a pressure of 30 MPa. AlN composite ceramics sintered with 30wt%-40wt%SiC at 1600℃ for 5 min exhibited the best dielectric loss tangent, which is greater than 0.3. In addition to AlN and β-SiC, the samples also contained 2H-SiC and Fe5Si3, as detected by X-ray difraction （XRD）. The relative densities of the sintered ceramics were higher than 93%. Experimental results indicate that nano-SiC has a strong capability of absorbing electromagnetic waves. The dielectric constant and dielectric loss of AlN-SiC ce-ramics with the same content of SiC decreased as the frequency of electromagnetic waves increased from 1 kHz to 1 MHz.

The Influence of Free Water Content on Dielectric Properties of Alkali Active Slag Cement Paste

The dielectric performance of alkali activated slag （AAS） cement paste was investigated in the frequency range of 1 to 1000 MHz. The experimental results showed the unstable dielectric properties of harden paste were mostly influenced by the fraction of free water in paste or absorbed water from ambient, but not including hydration water and microstructure. The free water was completely eliminated by heat treatment at 105 ℃ about 4 hours, and then its dielectric loss was depressed; but with the exposure time in air increasing, the free water adsorption in ambient air made the dielectric property of harden cement paste to be bad. The temperature and relative humidity of environment was the key factors of free water adsorption; hence, if the influence of free water on dielectric constant was measured or eliminated, the cement-based materials may be applied in humidity sensitive materials or dielectric materials domains.

Identification of the Intrinsic Dielectric Properties of Metal Single Atoms for Electromagnetic Wave Absorption

Atomically dispersed metals on N-doped carbon supports(M-N_(xCs)) have great potential applications in various fields.However,a precise understanding of the definitive relationship between the configuration of metal single atoms and the dielectric loss properties of M-N_(xCs) at the atomic-level is still lacking.Herein,we report a general approach to synthesize a series of three-dimensional(3D)honeycomb-like M-N_xC(M=Mn,Fe,Co,Cu,or Ni) containing metal single atoms.Experimental results indicate that 3D M-N_(xCs) exhibit a greatly enhanced dielectric loss compared with that of the NC matrix.Theoretical calculations demonstrate that the density of states of the d orbitals near the Fermi level is significantly increased and additional electrical dipoles are induced due to the destruction of the symmetry of the local microstructure,which enhances conductive loss and dipolar polarization loss of 3D M-N_(xCs),respectively.Consequently,these 3D M-N_(xCs) exhibit excellent electromagnetic wave absorption properties,outperforming the most commonly reported absorbers.This study systematically explains the mechanism of dielectric loss at the atomic level for the first time and is of significance to the rational design of high-efficiency electromagnetic wave absorbing materials containing metal single atoms.

Effect of Gadolinium Substitution on Dielectric Properties of Bismuth Ferrite

Multiferroic Bi1-xGdxFeO3(x =0, 0.05, 0.1, 0.15, 0.2) ceramics were prepared by conventional solid state reaction method. X-ray diffraction was carried out to characterize the crystal structure and to detect any possible impurities existing in these ceramics. Frequency dependence of dielectric properties of Bi1-xGdxFeO3 samples at room temperature was measured in a frequency range from 100 Hz to 1 MHz using an HP4294A precision impedance analyzer. For all the samples studied, the dielectric constant and dielectric loss decreases with increasing frequency in the range between 100 Hz and 1 MHz, as can be expected from a typical orientational dielectric relaxation process. There is no indication of any dips over the whole frequency range studied, which is in direct contrast with that reported previously. It is found that both dielectric constant and dielectric loss are strongly dependent on the Gd3+ content. The effect of introducing Gd3+ is to increase the dielectric constant and to decrease the dielectric loss for slightly doped sample Bi0.95Gd0.05FeO3: the dielectric constant of the sample at 1 kHz reaches 600, six times bigger than that for pure BiFeO3. Complicated dielectric behaviors are observed at higher doping levels. Furthermore, the substitution of rare earth Gd for Bi helps to eliminate the impurity phase in BiFeO3 ceramics. There is strong evidence that both lattice constants a and c of the unit cell become smaller as the Gd3 + content is increased. The dielectric constant and loss and their frequency responses can be varied dramatically by substitution of Gd.

Study on Ba_(6-3x)Sm_(8+2x)Ti_(18)O_(54) Microwave Dielectric Ceramics

The effects of different x values on the dielectric properties in the Ba6-3xSm8+2xTi18O54 microwave dielectric ceramics(0.3≤x≤0.7) were studied. The results showed that the major crystal phase was BaSm2Ti4O12 and the sintering temperature of the ceramics was 1340 ℃ when the x value was 0.67. The dielectric properties were better: εr≈79, tanδ≈1×10-4(1 MHz); εr≈80, Q·f=9230 GHz(3.97 GHz), τf=-17 ppm·℃-1.