A 5.4mW and 6.1% efficiency fixed-tuned 214GHz frequency doubler with Schottky barrier diodes

A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50 μm thick quartz substrate. Diode embedding impedance is found by full- wave analysis with lumped port to model the nonlinear junction for impedance matching without the need of diode equivalent circuit model. All the matching circuit is designed ＂on-chip＂ and the mul- tiplier is self-biasing. To the doubler, a conversion efficiency of 6.1% and output power of 5.4mW are measured at 214GHz with input power of 88mW, and the typical measured efficiency is 4.5% in 200 - 225 GHz.

The ultimate strength of doubler plate reinforced Y-joints under compression loading

It is common practice in the offshore industry to solve the punching shear problem due to compression by using doubler plate. The finite-element method is a useful tool for studying this problem. The aim of this paper is to study the static strength of doubler plate reinforced Y-joints subjected to compression loading. The finite-element method is adopted in numerical parametric studies. The individual influences of the geometric parameters βand τd （doubler plate to chord wall thickness ratio） and ld/d1（dubler plate length to brace diameter ratio） on the ultimate strength are made clear. The results show the size of plate may have important effects on the strength of reinforced joints. It is found that the ultimate strength of Y-joints reinforced with appropriately proportioned doubler plates can be greatly improved nearly up tothree times to un-reinforced Y-joints.

基于dikson charge pump的voltage doubler设计

随着集成电路工艺的发展,电源电压不断降低,使得charge pump在芯片上的地位更加重要。传统的voltage doubler基于开关的实现方法,由于MOS管阈值电压的影响,使得voltagedoubler的输出电压与2VDD电平相差甚远。在分析dikson charge pump工作原理的基础上,提出了一种新型的基于dikson charge pump的voltage doubler,通过外加电容的方法,可以实现对diksoncharge pump的输出电压进行微调,从而得到所需要的2VDD的电平。采用smic0.35μm工艺仿真后发现当VDD=5V时,传统的voltage doubler输出电平为8.54V,而dikson voltage doubler的输出电平为理想的10V。

Generation of self-oscillations from a singly resonant periodically poled potassium titanyl phosphate crystal frequency doubler

We report on the generation of self-oscillations from a continuously pumped singly resonant frequency doubler based on a periodically poled potassium titanyl phosphate crystal （PPKTP）. The sustained square-wave and staircase curve of self-oscillations are obtained when the incident pump powers are below and above the threshold of subharmonic-pumped parametric oscillation （SPO）, respectively. The self-oscillations can be explained by the competition between the phase shifts induced by cascading nonlinearity and thermal effect, and the influence of fundamental nonlinear phase shift by the generation of SPO. The simulation results are in good agreement with the experiment data.

Well-balanced ambipolar diketopyrrolopyrrole-based copolymers for OFETs,inverters and frequency doublers

Conjugated polymers with well-balanced ambipolar charge transport is essential for organic circuits at low cost and large area with simplified fabrication techniques.Aiming at this point,herein,a novel asymmetric thiophene/pyridine-flanked diketopyrrolopyrrole-based copolymer(PPyTDPP-2FBT)is designed and synthesized.Due to the effect of incorporating F atoms on molecular energy alignment and conjugation conformation,the PPyTDPP-2FBT copolymer exhibits typical V-shaped ambipolar field-effect transfer characteristics with well-balanced hole and electron mobilities of 0.64 and 0.46 cm^(2)V^(−1)s^(−1),respectively.Furthermore,organic digital and analog circuits such as inverters and frequency doublers are successfully constructed based on solution-processed films of the PPyTDPP-2FBT copolymers which show a typical circuit operating mode with a high gain of 133 due to the well-balanced electrical properties.In addition,PPyTDPP-2FBT-based devices also demonstrate good stability and batch repeatability,suggesting their great potential applications in organic integrated electronic circuits.

W-band push–push monolithic frequency doubler in 1-μm InP DHBT technology

A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 x 0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion Rain above 4.7 dB over 75-80 GHz.

Nanoindentation on the doubler plane of KDP single crystal

The nanohardness is from 1.44 to 2.61 GPa,the Vickers hardness is from 127 to 252 Vickers,and elastic modulus is from 52 to 123 GPa by the nanoindentation experiments on the doubler plane of KDP crystal. An indentation size effect is observed on the doubler plane in the test as the nanohardness and elastic modulus decreases with the increase of the maximum load.Slippage is identified as the major mode of plastic deformation, and pop-in events are attributed to the initiation of slippage.And the variation of unloading curve end is the result of stick effects between the indenter and the contact surface.The depth of the elastic deformation,which is between 40 and 75 nm,is responsible for the elastic deformation.The doubler plane of KDP crystal has anisotropy,and the relative anisotropy of nanohardness is 8.2%and the relative anisotropy of elastic modulus is 8.0%.

Frequency-stabilized semimonolithic frequency doubler with high output power

We present a semimonolithic frequency-doubler from 1080 to 540 nm with 80% doubling efficiency and up to 849-mW output power of green light. A frequency-stabilized laser diode (LD) pumped continuous wave (CW) Nd:YAP laser is used as the pump source of the doubler consisting of an α-cut KTP crystal and an input mirror. The frequency stabilities of the output second harmonic wave are better than ±246 kHz and ±2.3 MHz in 1 and 30 minutes, respectively, and the intensity fluctuation is less than ±0.65%.

A broadband GaAs MMIC frequency doubler on left-handed nonlinear transmission lines

A broadband frequency doubler using left-handed nonlinear transmission lines（LH NLTLs） based on MMIC technology is reported for the first time.The second harmonic generation on LH NLTLs was analyzed theoretically. A four-section LH NLTL which has a layout of 5.4×0.8 mm^2 was fabricated on GaAs semi-insulating substrate. With 20-dBm input power,the doubler obtained 6.33 dBm peak output power at 26.8 GHz with 24-43 GHz—6 dBm bandwidth.The experimental results were quite consistent with the simulated results.The compactness and the broad band characteristics of the circuit make it well suit for GaAs RF/MMIC application.

W-band high output power Schottky diode doublers with quartz substrate

W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks of the circuit, such as the low pass filter, the E-plane waveguide to strip transitions, input and output matching networks, and passive diode parts are analyzed by using electromagnetic simulators, and the different parts are then combined and optimized together. The exported S-parameters of the doubler circuit are used for multiply efficiency analysis. The highest measured output power is 29.5 mW at 80 GHz and higher than 15 mW in 76-94 GHz. The highest measured efficiency is 11.5% at 92.5 GHz, and the typical value is 6.0% in 70-100 GHz.

Design of 20-44 GHz broadband doubler MMIC

This paper presents the design and performance of a broadband millimeter-wave frequency doubler MMIC using active 0.15 μm GaAs PHEMT and operating at output frequencies from 20 to 44 GHz. This chip is composed of a single ended-into differential-out active Balun, balanced FETs in push-push configuration, and a distributed amplifier. The MMIC doubler exhibits more than 4 dB conversion gain with 12 dBm of output power, and the fundamental frequency suppression is typically -20 dBc up to 44 GHz. The MMIC works at VDD = 3.5 V, Vss = -3.5 V, Id = 200 mA and the chip size is 1.5× 1.8 mm^2.

连续波输出功率111.27 mW的G波段四端口平衡式倍频器

利用新颖的四端口平衡式二倍频原型,开发了215~230 GHz频段的肖特基变容管倍频器,并具备更加优秀的变频效率和功率容量。同时,所提出的倍频架构能够实现奇次谐波和四次谐波的本征抑制,并且其中采用的二极管管结数量相对于传统平衡倍频结构提升了两倍。因此,这种四端口倍频电路可以实现更好的转换效率和双倍的功率处理能力。在室温下,当输入功率为196~340 mW时,该倍频器具有约39.5%的峰值转换效率(@218 GHz),即使在较高的频率下,该倍频器也被证明是高功率太赫兹波信号产生的理想解决方案。

基于改进开关可调电容的宽调谐太赫兹频率源设计

针对太赫兹频率源调谐范围窄的问题,基于普通PMOS可变电容设计了一种改进的开关可调电容,实现了电容变化的单调性,并基于该电容结合衬底调谐方式设计了一种宽调谐范围、高输出功率的压控振荡器(Voltage-controlled oscillator, VCO)。将设计的VCO结合二倍频器实现了一种工作在太赫兹频段的,具有较宽调谐范围及较高输出功率的太赫兹频率源。使用40 nm CMOS工艺设计的太赫兹频率源输出频率为146.3~168.5 GHz,调谐范围14.1%,并同时具有最高1.3 dBm的输出功率,其在10 MHz频偏处的相位噪声最优为-105.52 dBc/Hz。

低纹波空间可调高压电源设计

为了满足空间探测载荷(如质谱仪和能量粒子探测器等)对高压电源输出纹波的要求,设计一款小功率、低纹波、最大输出电压为10 kV的可调高压直流电源。设计中使用罗耶架构的逆变器和倍压整流电路,利用反馈回路,使纹波电压峰峰值小于2 V;使用51系列单片机控制电源输出电压,监测电源的工作状态。除在原理设计方面降低输出电压纹波外,还提出其他降低输出电压纹波的措施。测试结果表明,所设计的高压电源具有输出电压稳定可调、纹波低的特点,可以满足空间探测载荷对高压电源的基本性能要求。

170GHz二倍频器2路功率合成技术研究

文章研究并实现了基于170GHz二倍频器2路的功率合成。采用三维电磁场仿真设计并实现了E面T型功分/功合器。功率分配器采用WR10标准波导,80GHz~95GHz频带内,插入损耗在0.2dB左右,端口2和端口3之间隔离度在6dB左右。输出功率合成器采用WR5标准波导,160GHz~185GHz频带内,插入损耗在0.4dB左右,端口2和端口3之间隔离度在6dB左右。采用GaAs肖特基二极管单片集成技术设计并制备单路二倍频器,以满足一致性要求;基于170GHz二倍频器2路功率合成的测试结果表明,输入功率在600mW~800mW之间,163GHz~178GHz的输出功率在110mW~264mW,合成效率在80%以上。在171GHz的频点下,峰值输出功率可达264mW,峰值合成效率达到92%。

基于F类谐波抑制网络的紧凑型高效率倍压整流电路

提出了一种用于射频能量收集(RFEH)的新型F类倍压整流电路。在该结构中,采用两种不同的谐波终端网络来抑制倍压二极管的谐波,并重塑电流波形和电压波形,从而显著提高传统倍压整流电路的功率转换效率(PCE)。为了验证该结构的可行性,制作了一个实物并进行实际测量。在输入功率为13 dBm和负载为1600Ω的条件下,测量到的PCE峰值为76.5%。此外,PCE高于50%的输入功率范围为1.8~15.5 dBm。

耦合电感型高增益Boost变换器拓扑分析

耦合电感型高增益Boost变换器在光伏、燃料电池等新能源并网系统中得到广泛重视,但鲜有文献阐述其拓扑构建思路及方法。为此,以基本耦合电感型Boost变换器为出发点,分析了其优点和不足;然后围绕如何抑制开关管电压尖峰、如何降低输出二极管电压应力、如何进一步提高电压增益,系统分析并推导了有源钳位、带整流单元、多绕组以及带倍压单元等四类改进的耦合电感型Boost变换器,明确了它们之间的内在联系及各自的性能特点;最后根据分析结果,选择一种带倍压单元的层叠型高增益Boost变换器进行实验研究,搭建了250W的实验样机,实测最大效率为97%。

倍流整流方式ZVS PWM三电平直流变换器

提出一种倍流整流方式零电压开关PWM三电平变换器(CDR ZVS PWM TL变换器),它利用输出滤波电感的能量可以在很宽的负载范围内实现开关管的ZVS,并且使输出整流管能够自然换流,从而避免了反向恢复造成的电压振荡和电压尖峰。该文分析这种变换器的工作原理,讨论超前管和滞后管各自实现ZVS的特点,并通过一个540W的原理样机验证该变换器的可行性。论文最后给出实验结果。

一种适用于高压输出的软开关多谐振直流变流器

将倍压整流技术和LLC多谐振变流器结合起来,构造出倍压整流LLC多谐振变流器。该变流器的变压器结构简单,副边只需要一个绕组;输出电容电压应力是输出电压的一半,无需额外的均压电路;只需要两个整流二极管,二极管的电压应力等于输出电压,电流应力等于输出电流,所以该变流器非常适合用于高压输出中小功率的DC/DC电源。另外,该变流器的所有功率半导体器件都工作于软开关状态,所以适用于高频高功率密度的场合。详细分析了该变流器的工作原理,软开关过程,输出电容的自动均压机理,并给出了关键的参数设计方法,采用该变流器技术的500V输出直流电源的实验结果验证了以上分析的正确性,满载效率达92.3%。

同步整流下对称半桥倍流变换器的建模与分析

在考虑主开关管、同步整流管以及变压器损耗等问题的情况下,建立了同步整流下对称半桥倍流变换器新的数学模型并进行了分析。首先,研究了变换器的工作过程,导出状态方程;其次,应用状态空间平均法对变换器进行系统分析,得到较为精确的小信号系统模型;最后,结合实例对系统的精确模型给出了频域仿真和设计结果。仿真结果表明,与未考虑各种寄生参数的模型相比,这种新的模型更符合电路工作情况,且具有更大的精度。