Within the framework of nonlinear eleetroelasticity, the stress field near to the crack tip in an infinite piezoelectric media subject to a far field uniform loading is studied by using an electrical strip saturation ...Within the framework of nonlinear eleetroelasticity, the stress field near to the crack tip in an infinite piezoelectric media subject to a far field uniform loading is studied by using an electrical strip saturation model and the complex variable method. And the emphasis is placed on the stress field near to the crack tip. The obtained solutions show that the normalized stress components at an arbitrary point near to the crack tip are determined by the angle of the point. Moreover, the stress components are independent of the distance from the point to the ori- gin of the coordinate. The distributions of in-plane stress components near to the crack tip are analyzed based on numerical results for PZT-SH. Compared with some related solutions, results show that the solutions are valid.展开更多
We demonstrate an electric-controlled terahertz（THz） modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by e...We demonstrate an electric-controlled terahertz（THz） modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by electrically controlling the monolayer silicon-based device. The modulation depth reached 100% almost when the applied voltage was 7V at an external laser intensity of 0.6W/cm2. The saturation voltage reduced with the increase of the photo-excited intensity. In a THz continuous wave（CW）system, a significant fall in both THz transmission and reflection was also observed with the increase of applied voltage. This reduction in the THz transmission and reflection was induced by the absorption for electron injection. The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized.展开更多
基金the Innovation Project for Graduates in Jiangsu Province~~
文摘Within the framework of nonlinear eleetroelasticity, the stress field near to the crack tip in an infinite piezoelectric media subject to a far field uniform loading is studied by using an electrical strip saturation model and the complex variable method. And the emphasis is placed on the stress field near to the crack tip. The obtained solutions show that the normalized stress components at an arbitrary point near to the crack tip are determined by the angle of the point. Moreover, the stress components are independent of the distance from the point to the ori- gin of the coordinate. The distributions of in-plane stress components near to the crack tip are analyzed based on numerical results for PZT-SH. Compared with some related solutions, results show that the solutions are valid.
基金supported by the Natural Science Foundation of Beijing under Grant No.4144069the Science and Technology Project of Beijing Municipal Education Commission under Grant No.KM201410028004
文摘We demonstrate an electric-controlled terahertz（THz） modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by electrically controlling the monolayer silicon-based device. The modulation depth reached 100% almost when the applied voltage was 7V at an external laser intensity of 0.6W/cm2. The saturation voltage reduced with the increase of the photo-excited intensity. In a THz continuous wave（CW）system, a significant fall in both THz transmission and reflection was also observed with the increase of applied voltage. This reduction in the THz transmission and reflection was induced by the absorption for electron injection. The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized.
