Effect of gas bubble on cell voltage oscillations based on equivalent circuit simulation in aluminum electrolysis cell

A method to investigate the effect of gas bubble on cell voltage oscillations was established. The whole aluminum electrolysis cell was treated as a resistance circuit, and the dynamic simulation of the cell equivalent circuit was modeled with Matlab/Simulink simulation software. The time-series signals of cell voltage and anode current were obtained under different bubble conditions, and analyzed by spectral and statistical analysis methods. The simulation results show that higher bubble release frequency has a significant effect on the cell voltage oscillations. When the bubble coverage of one anode block exceeds 80%, the cell voltage may exceed its normal fluctuation amplitude. The simulation also proves that the anode effect detected by computer in actual production is mainly the whole cell anode effect.

Equivalent Circuit Analysis of an RF Integrated Inductor with Ferrite Thin-Film

An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyzed. Circuit element parameters are extracted from RF measurements. Compared with the reference air-core inductor without magnetic film, L and Q of the ferrite thin-film inductor are 17% and 40% higher at 2GHz,respectively. Both the equivalent circuit analysis and test results demonstrate significant enhancement of the performance of RF integration inductors by ferrite thin-film integration.

Small-Signal Equivalent Circuit Modeling of a Photodetector Chip

A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector＇s RF performance into consideration,is first determined based on the device＇s physical structure. The photodetector＇s S parameters are then on-wafer measured, and the measured raw data are processed with further calibration. A genetic algorithm is used to fit the measured data, thereby allowing us to calculate each parameter value of the model. Experimental resuits show that the modeled parameters are well matched to the measurements in a frequency range from 130MHz to 20GHz, and the proposed method is proved feasible. This model can give an exact description of the photodetector chip＇s high frequency performance,which enables an effective circuit-level prediction for photodetector and optoelectronic integrated circuits.

Abstraction of Small Signal Equivalent Circuit Parameters of Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT

An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/In-GaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEHEMT1 model of IC-CAP software. The extraction results are verified by ADS software,and the DC I-V curves and S parameters simulated by ADS are basically accordant with those of the test results. These results indicate that the EEHEMT1 model can be used for extracting the component parameters of an enhancement-mode PHEMT.

Electrode Location Efficiency and Equivalent Circuit for Flexure Vibration of Piezoelectric Beam

Aim To provide technical parameters for development of quartz gyro. Methods Theory of elastic beam was applied to piezoelectric beam. Based on the concept of equivalent volume force and energy conservation, the formula of electrode location efficiency was derived. And the electric system was compared with the dynamic one according to the principle of equivalent circuit for piezoelectric crystal, and the general formulae of the parameters for the equivalent circuit, R n L n C n , were derived. Results and Conclusion Optimum electrode location is chosen, and the derived equivalent circuit parameters are the theoretical base of the circuit design for quartz gyro.

A Frequency-Independent Equivalent Circuit for High-k Stacked Monolithic Transformers

A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model enables fast and accurate time domain transient analysis and noise analysis in RFIC simulation since all elements in the model are fre- quency independent. The validity of the proposed model has been demonstrated by a fabricated monolithic stacked trans- former in TSMC＇s 0.13μm mixed-signal （MS）/RF CMOS＇ process.

Lumped Equivalent Circuit of Planar Spiral Inductor for CMOS RFIC Application

A lumped π-type equivalent circuit of planar spiral inductor for CMOS RFIC application is developed by the domain decomposition method for conformal modules （DDM-CM）. Closed form expressions of lumped parameters for a square spiral inductor on a Si-SiO2 substrate are obtained and verified with the previously published experimental results.

Chaotic memristive circuit:equivalent circuit realization and dynamical analysis

In this paper, a practical equivalent circuit of an active flux-controlled memristor characterized by smooth piecewise-quadratic nonlinearity is designed and an experimental chaotic memristive circuit is implemented. The chaotic memristive circuit has an equilibrium set and its stability is dependent on the initial state of the memristor. The initial state-dependent and the circuit parameter-dependent dynamics of the chaotic memristive circuit are investigated via phase portraits, bifurcation diagrams and Lyapunov exponents. Both experimental and simulation results validate the proposed equivalent circuit realization of the active flux-controlled memristor.

Simulation of second-order RC equivalent circuit model of lithium battery based on variable resistance and capacitance

With the rise of the electric vehicle industry,as the power source of electric vehicles,lithium battery has become a research hotspot.The state of charge(SOC)estimation and modelling of lithium battery are studied in this paper.The ampere-hour(Ah)integration method based on external characteristics is analyzed,and the open-circuit voltage(OCV)method is studied.The two methods are combined to estimate SOC.Considering the accuracy and complexity of the model,the second-order RC equivalent circuit model of lithium battery is selected.Pulse discharge and exponential fitting of lithium battery are used to obtain corresponding parameters.The simulation is carried out by using fixed resistance capacitance and variable resistance capacitor respectively.The accuracy of variable resistance and capacitance model is 2.9%,which verifies the validity of the proposed model.

Analysis of each branch current of serial solar cells by using an equivalent circuit model

In this paper, based on the equivalent single diode circuit model of the solar cell, an equivalent circuit diagram for two serial solar cells is drawn. Its equations of current and voltage are derived from Kirchhoff＇s current and voltage law. First, parameters are obtained from the I-V （current-voltage） curves for typical monocrystalline silicon solar cells （125 mmx 125 mm）. Then, by regarding photo-generated current, shunt resistance, serial resistance of the first solar cell, and resistance load as the variables. The properties of shunt currents （Ishl and Ish2）, diode currents （/D1 and/]：）2）, and load current （IL） for the whole two serial solar cells are numerically analyzed in these four cases for the first time, and the corresponding physical explanations are made. We find that these parameters have different influences on the internal currents of solar cells. Our results will provide a reference for developing higher efficiency solar cell module and contribute to the better understanding of the reason of efficiency loss of solar cell module.

The voltage-current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example, upon which the voltage-current relationships （VCRs） between two parallel memristive circuits - a parallel memristor and capacitor circuit （the parallel MC circuit）, and a parallel memristor and inductor circuit （the parallel ML circuit） - are investigated. The results indicate that the VCR between these two parallel memristive circuits is closely related to the circuit parameters, and the frequency and amplitude of the sinusoidal voltage stimulus. An equivalent circuit model of the memristor is built, upon which the circuit simulations and exper/mental measurements of both the parallel MC circuit and the parallel ML circuit are performed, and the results verify the theoretical analysis results.

Equivalent circuit with complex physical constants and equivalent-parameters-expressed dissipation factors of piezoelectric materials

The equivalent circuit with complex physical constants for a piezoelectric ceramic in thickness mode is established. In the equivalent circuit, electric components （equivalent circuit parameters） are connected to real and imaginary parts of complex physical coefficients of piezoelectric materials. Based on definitions of dissipation factors, three of them （dielectric, elastic and piezoelectric dissipation factors） are represented by equivalent circuit parameters. Since the equivalent circuit parameters are detectable, the dissipation factors can be easily obtained. In the experiments, the temperature and the stress responses of the three dissipation factors are measured.

Threshold flux-controlled memristor model and its equivalent circuit implementation

Modeling a memristor is an effective way to explore the memristor properties due to the fact that the memristor devices are still not commercially available for common researchers. In this paper, a physical memristive device is assumed to exist whose ionic drift direction is perpendicular to the direction of the applied voltage, upon which, corresponding to the HP charge-controlled memristor model, a novel threshold flux-controlled memristor model with a window function is proposed. The fingerprints of the proposed model are analyzed. Especially, a practical equivalent circuit of the proposed model is realized, from which the corresponding experimental fingerprints are captured. The equivalent circuit of the threshold memristor model is appropriate for various memristors based breadboard experiments.

In Situ Acquisition of Equivalent Circuit Parameters of Crystal Resonance during Copper Deposition and Dissolution in Acidic Solution by Electrochemical Quartz Crystal Impedance System

Electrochemical quartz crystal impedance system (EQCIS) which allows in situ dynamic quartz crystal impedance measurement in an electrochemical experiment was developed by combining an HP 4395A Network/Spectrum/Impedance analyzer with an EG&G M283 potentiostat. Equivalent circuit parameters of crystal resonance change significantly during electrodeposition and dissolution of copper in 0.1 mol/L H2SO4 aqueous solution in a cyclic potential sweep experiment, which is explained with an overall picture of mass loading, solution density and viscosity, etc..

Dynamical characteristics of an HP memristor based on an equivalent circuit model in a chaotic oscillator

To develop real world memristor application circuits, an equivalent circuit model which imitates memductance （mem- ory conductance） of the HP memristor is presented. The equivalent circuit can be used for breadboard experiments for various application circuit designs of memristor. Based on memductance of the realistic HP memristor and Chua＇s circuit a new chaotic oscillator is designed. Some basic dynamical behaviors of the oscillator, including equilibrium set, Lyapunov exponent spectrum, and bifurcations with various circuit parameters are investigated theoretically and numerically. To con- firm the correction of the proposed oscillator an analog circuit is designed using the proposed equivalent circuit model of an HP memristor, and the circuit simulations and the experimental results are given.

An equivalent circuit model for terahertz quantum cascade lasers:Modeling and experiments

Terahertz quantum cascade lasers（THz QCLs） emitted at 4.4 THz are fabricated and characterized. An equivalent circuit model is established based on the five-level rate equations to describe their characteristics. In order to illustrate the capability of the model, the steady and dynamic performances of the fabricated THz QCLs are simulated by the model.Compared to the sophisticated numerical methods, the presented model has advantages of fast calculation and good compatibility with circuit simulation for system-level designs and optimizations. The validity of the model is verified by the experimental and numerical results.

Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation

With the widespread utilization of indium-phosphide-based high-electron-mobility transistors(InP HEMTs)in the millimeter-wave(mmW)band,the distributed and high-frequency parasitic coupling behavior of the device is particularly prominent.We present an InP HEMT extrinsic parasitic equivalent circuit,in which the conductance between the device electrodes and a new gate-drain mutual inductance term L_(mgd)are taken into account for the high-frequency magnetic field coupling between device electrodes.Based on the suggested parasitic equivalent circuit,through HFSS and advanced design system(ADS)co-simulation,the equivalent circuit parameters are directly extracted in the multi-step system.The HFSS simulation prediction,measurement data,and modeled frequency response are compared with each other to verify the feasibility of the extraction method and the accuracy of the equivalent circuit.The proposed model demonstrates the distributed and radio-frequency behavior of the device and solves the problem that the equivalent circuit parameters of the conventional InP HEMTs device are limited by the device model and inaccurate at high frequencies when being extracted.

Analysis for Transmission of Composite Structure with Graphene Using Equivalent Circuit Model

A simple analytical method is presented to analyze the transmission of electromagnetic plane waves through multilayer stacked composite two-dimensional( 2D) structures at microwave frequencies. Unlike the traditional structure,high impedance surface with graphene sheet is proposed. The structure includes graphene and thin metal patches and meshes. Simple analytical formulas are introduced for the surface impedance of graphene and for the grid impedance of electrically dense arrays of metal square patches or strips. The result of transmission properties is based on the dynamic tunable model of the high impedance surface,which considers the surface conductivity of graphene layer. The transmission coefficient obtained by using the equivalent circuit method is validated against full-wave numerical simulations. The considered equivalent circuit method can be useful in the design of graphene tunable planar devices.

Analysis of frequency selective surface absorbers via a novel equivalent circuit method

An equivalent circuit （EC） method for absorbers design is proposed in this paper. Without using full-wave analysis, the EC method can predict the performance of the absorbers. This method is employed to synthesize broadband absorbers by inserting the resistors respectively into the single-and double-square loops structures, then two different prototypes with broadband absorbing frequency bands are manufactured and measured. By comparisons with the results both by using the full-wave analysis and by the measurements, the correctness of the new EC method is verified. Some factors which affect the absorbing bandwidth are also investigated. Due to its fast and accurate characteristics, the EC method which can be theoretically applied to arbitrary FSS is a good candidate for broadband design of the absorbers.

Pspice Equivalent Circuit Model for Implementation of Surface Acoustic Wave Filter

The crystals of quartz,lithium,and piezoelectric ceramics have a piezoelectric effect as their major characteristic.The surface acoustic wave filter(SAWF) was designed by using this property.However,the experimental cost of the fabrication of SAWF is higher than that of mechanical filter or LC filter.Through the RLC(resistor,inductor and capacitor) network equivalent circuit and the interdigital transducer(IDT) equivalent circuit model,the electromotive force,the mechanical impedance of piezoelectric plate,and the wave number of Mason circuit model were researched.The equivalent circuit can be used to reduce product development costs and shorten the development cycle.Comparing simulation result by Pspice software with the theory of SAWF,the simulated waveform is similar to theory measurement,and the equivalent circuit model is verified.