The FTP200 flake tantalum powder was introduced.The microstructures of the powder with leaf-like primary particles having an average flakiness of 2 to 20 and porous agglomerated particles were observed.The chemical co...The FTP200 flake tantalum powder was introduced.The microstructures of the powder with leaf-like primary particles having an average flakiness of 2 to 20 and porous agglomerated particles were observed.The chemical composition,physical properties,and electrical properties of the FTP200 powder were compared with those of the FTW300 nodular powder.The FTP200 powder is more sinter-resistant,and the surface area of the flake tantalum powder under sintering at high temperature has less loss than that of the nodular tantalum powder.The specific capacitance of the flake tantalum powder is higher than that of the nodular tantalum powder with the same surface area when anodized at high voltage.Thus,the flake tantalum powder is suitable for manufacturing tantalum solid electrolytic capacitors in the range of median and high（20-63 V） voltages.展开更多
The effect of Sm 2O 3 dopant on the sintering characteristics and dielectric properties of barium zirconium titanate ceramics (BaZr x Ti 1- x O 3) was investigated. It is shown that trace amount of Sm ...The effect of Sm 2O 3 dopant on the sintering characteristics and dielectric properties of barium zirconium titanate ceramics (BaZr x Ti 1- x O 3) was investigated. It is shown that trace amount of Sm 2O 3 can greatly affect the grain growth and densification of barium zirconium titanate ceramics during sintering. At the same time, the dielectric peak at high temperature shifts to lower temperature and that at low temperature shifts to higher temperature. The two dielectric peaks overlap with each other when the Sm 2O 3 dopant content varies from 0 25% to 1%, and the maximum relative dielectric constant is greatly enhanced. These effects may be attributed to the substitution actions of the rare earth element in perovskite lattice. At the doping content of 0 75%, the dielectric constant maximum of 23570 can be obtained. By adopting some proper additives, an excellent Y5V dielective material is obtained, and the room temperature properties are as follows: relative dielectric constant ε RT ≥23,000, dielectric loss tgδ≤0 0075 and the breakdown strength under alternating field E b≥5 kV·mm -1 .展开更多
文摘The FTP200 flake tantalum powder was introduced.The microstructures of the powder with leaf-like primary particles having an average flakiness of 2 to 20 and porous agglomerated particles were observed.The chemical composition,physical properties,and electrical properties of the FTP200 powder were compared with those of the FTW300 nodular powder.The FTP200 powder is more sinter-resistant,and the surface area of the flake tantalum powder under sintering at high temperature has less loss than that of the nodular tantalum powder.The specific capacitance of the flake tantalum powder is higher than that of the nodular tantalum powder with the same surface area when anodized at high voltage.Thus,the flake tantalum powder is suitable for manufacturing tantalum solid electrolytic capacitors in the range of median and high（20-63 V） voltages.
文摘The effect of Sm 2O 3 dopant on the sintering characteristics and dielectric properties of barium zirconium titanate ceramics (BaZr x Ti 1- x O 3) was investigated. It is shown that trace amount of Sm 2O 3 can greatly affect the grain growth and densification of barium zirconium titanate ceramics during sintering. At the same time, the dielectric peak at high temperature shifts to lower temperature and that at low temperature shifts to higher temperature. The two dielectric peaks overlap with each other when the Sm 2O 3 dopant content varies from 0 25% to 1%, and the maximum relative dielectric constant is greatly enhanced. These effects may be attributed to the substitution actions of the rare earth element in perovskite lattice. At the doping content of 0 75%, the dielectric constant maximum of 23570 can be obtained. By adopting some proper additives, an excellent Y5V dielective material is obtained, and the room temperature properties are as follows: relative dielectric constant ε RT ≥23,000, dielectric loss tgδ≤0 0075 and the breakdown strength under alternating field E b≥5 kV·mm -1 .
