CORROSION BEHAVIOR OF Cu-Nb AND Ni-Nb AMORPHOUS FILMS PREPARED BY ION BEAM ASSISTED DEPOSITION

The Cu25 Nb75 and Ni45Nb55 amorphous films with about 500nm thickness were prepared by ion beam assisted deposition (IBAD). Potentiodynamic polarization measurement was adopted to investigate the corrosion resistance of samples and the tests were carried out respectively in 1mol/L H2SO4 and NaOH aquatic solution. The corrosion performance of the amorphous films was compared with that of multilayered and pure Nb films. Experimental results indicated that the corrosion resistance of amorphous films was better than that of the corresponding multilayers and pure Nb films for both Ni-Nb system with negative heat of formation and Cu-Nb system with positive heat of formation.

AMORPHIZATION IN Nb-M (M=Fe, Co, Ni) BINARY METAL SYSTEMS INDUCED BY ION BEAM ASSISTED DEPOSITION (IBAD)

Ion beam assisted deposition technique (IBAD) was utilized to systematically study amorphization in binary metal systems of Nb-magnetic element, i.e., Nb-M (M=Fe, Co or Ni). The glass forming range termed as Nb fraction of Nb-Fe system was about 34at.% to 56at.%, that of Nb-Co system was about 32at.% to 72at.% and that of Nb-Ni about 20at. % to 80at. %. Similar percolation patterns were found in amorphous alloy films. The fractal dimensions of the percolation patterns approach to 2, which indicates 2-D layer growth for amorphous phases. It is regarded that the assisted Ar+ ion beam during the deposition process plays important role for the 2-D layer growth. Some metastable crystalline phases were obtained in these three systems by IBAD, e.g., bcc supersaturated solid solutions in Nb-Fe and Nb-Co systems, fcc and hcp phases in Nb-Co and Nb-Ni systems. The formation and competing between the amorphous and the metastable crystalline phases were determined by both the phases' thermodynamic states in binary metal systems and kinetics during IBAD process.

Cr/CrN Compound Films Prepared by Ion Beam Assisted Deposition for Improving the Performance of Bearing Steel

With the development of industry, much attention has been paid to lengthening the life span of bearings. As reported in this paper, we investigated the Cr/CrN compound films formed on the specimens of W9Cr4V2Mo bearing steel by ion beam assisted deposition for improving the performance of bearing steels. The Vicker＇s microhardness, pin-on-disc, electrochemical measurement, XRD and SEM tests were used to characterize and analyze the treated samples. All results indicated that the mechanical properties of the treated samples were good, with the microhardness greater than that of the uncoated specimen, and the wear resistance, the passivity and pitting corrosion resistance increased considerably, the films possessed alternate Cr and CrN compound phases and produced different effects on the improvement of the performance of W9Cr4V2Mo bearing steels with different composing phases.

PREPARATION OF B-N FILMS BY ION BEAM ASSISTED DEPOSITION

BN films,synthesized by ion beam assisted deposition,were analysed by RBS,AES, IR spectra and TEM.Formatiom of c-BN phase was shown not only by IR spectra at absorption peak of 1100 cm^(-1),but also by electron diffraction pattern.The results of AES demonstrate an effect of N^+ implantation near the film surface.The deposited films consist of three layers,i.e.,ion implantation layer,film layer and mixed intermediatelayer, according to the difference of concentration.The micro-Knoop hardness of the film is 25—35 GPa.

Structural Characterization of Thin Epitaxial GaN Films on Polymer Polyimides Substrates by Ion Beam Assisted Deposition

The Epitaxial GaN thin films have been fabricated by Ion Beam Assisted Deposition (IBAD) process using nitrogen ions with hyperthermal energies on the polyimides polymer substrates. By applying with the Reflection of High-Energy Electron Diffraction (RHEED), Scanning Electron Microscopy (SEM) and Quantum Design Physical Properties Measurement System, the behaviour of hexagonal GaN thin films is investigated. The result showed that the high quality of the deposited GaN layers kept appearing for many parameters depending on the temperature greatly. The behaviour of high quality of epitaxial GaN coating on the polyimide polymer substrates is a promising material for optoelectronic devices and semiconductor devices application.

A New hcp Phase Formed in the Ni-Nb System during Ion-beam-assisted Deposition

The Ni80Nb20 films were prepared by ion beam assisted deposition (IBAD) with various Ar+ ion energies. A phase evolution of fcc→amorphous→Ni+Nb→Ni+hcp was observed with the increasing of ion beam energy from 2 keV to 8 keV. When bombarded by Ar+ ions of 8 keV during deposition, a new crystalline phase with hcp structure was obtained, of which the lattice parameters are a=0.286 nm and c=0.483 nm, different from those of the similar A3B-type hcp phase previously reported. The experimental results were discussed in terms of thermodynamics and restricted kinetic conditions in the far-from-equilibrium process of IBAD. The formation of hep phase may also be related to the valence electron effect.

Influence of APS bias voltage on properties of HfO_2 and SiO_2 single layer deposited by plasma ion-assisted deposition

HfO2 and SiO2 single layer is deposited on glass substrate with plasma ion assistance provided by Leybold advanced plasma source （APS）. The deposition is performed with a bias voltage in the range of 70-130 V for HfO2, and 70-170 V for SiO2. Optical, structural, mechanical properties, as well as absorption and laser induced damage threshold at 1064 nm of HfO2 and SiO2 single layer deposited with the plasma ion assistance are systematically investigated. With the increase of APS bias voltage, coatings with higher refractive index, reduced surface roughness, and higher laser-induced damage threshold （LIDT） are obtained, and no significant change of the absorption at 1064 nm is observed. For HfO2, a bias voltage can be identified to achieve coatings without any stress. However, too-high bias voltage can cause the increase of surface roughness and stress, and decrease the LIDT. The bias voltage can be properly identified to achieve coatings with desired properties.