Different localized states of travelling-wave convection in a rectangular container

We have performed numerical simulations of localized travelling-wave convection in a binary fluid mixture heated from below in a long rectangular container. Calculations are carried out in a vertical cross section of the rolls perpendic- ular to their axes. For a negative enough separation ratio, two types of quite different confined states were documented by applying different control processes. One branch of localized travelling waves survives only in a very narrow band within subcritical regime, while another branch straddles the onset of convection existing both in subcritical and super- critical regions. We elucidated that concentration field and its current are key to understand how confined convection is sustained when conductive state is absolutely unstable, The weak structures in the conducting region are demonstrated too.

One-dimensional method of investigating the localized states in armchair graphene-like nanoribbons with defects

In this paper we propose a type of new analytical method to investigate the localized states in the armchair graphene-like nanoribbons. The method is based on the tight-binding model and with a standing wave assumption. The system of armchair graphene-like nanoribbons includes the armchair supercells with arbitrary elongation-type line defects and the semi-infinite nanoribbons. With this method, we analyze many interesting localized states near the line defects in the graphene and boron-nitride nanoribbons. We also derive the analytical expressions and the criteria for the localized states in the semi-infinite nanoribbons.

Localized states of flattened quantum elliptic rings and their optical properties

A flattened elliptic ring containing an electron is studied. The emphasis is placed on clarifying the effect of the flattening. The localized states are classified into four types according to their inherent nodes. When the ring becomes more flattened, the total probability of dipole absorption of each state is found to be reduced. Furthermore, each spectral line of absorption is found to shift towards red and may split into a few lines, and these lines as a whole become more diffusive.

Observation of flat-band localized state in a one-dimensional diamond momentum lattice of ultracold atoms

We investigated the one-dimensional diamond ladder in the momentum lattice platform. By inducing multiple twoand four-photon Bragg scatterings among specific momentum states, we achieved a flat band system based on the diamond model, precisely controlling the coupling strength and phase between individual lattice sites. Utilizing two lattice sites couplings, we generated a compact localized state associated with the flat band, which remained localized throughout the entire time evolution. We successfully realized the continuous shift of flat bands by adjusting the corresponding nearest neighbor hopping strength, enabling us to observe the complete localization process. This opens avenues for further exploration of more complex properties within flat-band systems, including investigating the robustness of flat-band localized states in disordered flat-band systems and exploring many-body localization in interacting flat-band systems.

Vortex bound states influenced by the Fermi surface anisotropy

The spatial distribution of vortex bound states is often anisotropic,which is correlated with the underlying property of materials.In this work,we examine the effects of Fermi surface anisotropy on vortex bound states.The large-scale calculation of vortex bound states is introduced in the presence of fourfold or twofold Fermi surface by solving the Bogoliubov–de Gennes(BdG)equations.Two kinds of quasiparticles’behaviors can be extracted from the local density of states(LDOS)around a vortex.The angle-dependent quasiparticles will move from high energy to low energy when the angle varies from curvature maxima to minima of the Fermi surface,while the angle-independent quasiparticles tend to stay at a relatively higher energy.In addition,the weight of angle-dependent quasiparticles can be enhanced by the increasing anisotropy degree of Fermi surface.

Localized electronic states in gaps on hole-net structures of silicon

Hole-net structure silicon is fabricated by laser irradiation and annealing, on which a photoluminescence （PL） band in a the region of 650-750 nm is pinned and its intensity increases obviously after oxidation. It is found that the PL intensity changes with both laser irradiation time and annealing time. Calculations show that some localized states appear in the band gap of the smaller nanocrystal when Silo bonds or Si-O-Si bonds are passivated on the surface. It is discovered that the density and the number of Si=O bonds or Si-O-Si bonds related to both the irradiation time and the annealing time obviously affect the generation of the localized gap states of hole-net silicon, by which the production of stimulated emission through controlling oxidation time can be explained.

Local density of optical states calculated by the mode spectrum in stratified media

The local density of optical states(LDOS)is an important physical concept,which can characterize the spontaneous emission of microcavities.In order to calculate the LDOS,the relationship between the mode spectrum and the LDOS is established.Then,based on the transfer matrix method and the effective resonator model,the leaky loss of the leaky mode and the mode spectrum in the one-dimensional photonic bandgap crystal waveguide are calculated,results of which indicate that the mode spectrum can characterize the leaky loss of the leaky mode.At last,the density of optical states(DOS),and the LDOS in each layer are calculated.The partial DOS and the partial LDOS in the quantum well,related to the fundamental leaky mode,can be used to find out the optimal location of the quantum well in the defect layer to couple more useful photons into the lasing mode for lasers.

Quantitative determination of the critical points of Mott metal–insulator transition in strongly correlated systems

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal–insulator transition. We investigate the Mott transition in a Hubbard model by using the dynamical mean-field theory and introduce the local quantum state fidelity to depict the Mott metal–insulator transition. The local quantum state fidelity provides a convenient approach to determining the critical point of the Mott transition. Additionally, it presents a consistent description of the two distinct forms of the Mott transition points.

Electron states scattering off line edges on the surface of topological insulator

We study the local density of states （LDOS） for electrons scattering off the line edge of an atomic step defect on the surface of a three-dimensional （3D） topological insulator （TI） and the line edge of a finite 3D TI, where the front surface and side surface meet with different Fermi velocities, respectively. By using a S-function potential to model the edges, we find that the bound states existed along the step line edge significantly contribute to the LDOS near the edge, but do not modify the exponential behavior away from it. In addition, the power-law decaying behavior for LDOS oscillation away from the step is understood from the spin rotation for surface states scattering off the step defect with magnitude depending on the strength of the potential. Furthermore, the electron refraction and total reflection analogous to optics occurred at the line edge where two surfaces meet with different Fermi velocities, which leads to the LDOS decaying behavior in the greater Fermi velocity side similar to that for a step line edge. However, in the smaller velocity side the LDOS shows a different decaying behavior as x-1/2, and the wavevector of LDOS oscillation is no longer equal to the diameter of the constant energy contour of surface band, but is sensitively dependent on the ratio of the two Fermi velocities. These effects may be verified by STM measurement with high precision.

Spontaneous-emission control by local density of states of photonic crystal cavity

The local density of states （LDOS） of two-dimensional square lattice photonic crystal （PhC） defect cavity is studied. The results show that the LDOS in the centre is greatly reduced, while the LDOS at the point off the centre （for example, at the point （0.3a, 0.4a）, where a is the lattice constant） is extremely enhanced. Further, the disordered radii are introduced to imitate the real devices fabricated in our experiment, and then we study the LDOS of PhC cavity with configurations of different disordered radii. The results show that in the disordered cavity, the LDOS in the centre is still greatly reduced, while the LDOS at the point （0.3a, 0.4a） is still extremely enhanced. It shows that the LDOS analysis is useful. When a laser is designed on the basis of the square lattice PhC rod cavity, in order to enhance the spontaneous emission, the active materials should not be inserted in the centre of the cavity, but located at positions off the centre. So LDOS method gives a guide to design the positions of the active materials （quantum dots） in the lasers.

Local density of states of dc-biased superlattices with time-dependent imperfection

The single-particle Green＇s function for a dc-biased superlattices with single impurity potential varying harmonically with time has been obtained in the framework of U（t,t＇） method and Floquet-Green＇s function. The calculation of the local density of states shows that new states will emerge between the resonant Wannier-Stark states as a result of the intervention of time-dependent impurity potential, and the increase in electric field strength of impurity will result in the growing of the number of new states between the gaps of neighbouring Stark ladders.

Estimation the Density of Localized State Glassy Se_(100-x)Zn_(x) Thin Films by Using Space Charge Limited Conduction Measurement

The dc conductivity in vacuum evaporated amorphous thin films of the glassy alloys Se100–xZnx(2 ≤ x ≤ 20) are meas-ured in the temperature range (308 - 388 K). The dc conductivity (σdc) is increases with increased of Zn concentration in the glassy alloys. The activation energy (ΔE) decreases with increase of Zn content. The conduction is explained on the basis of localized state in the mobility gap. To study the effect of electric field, a Current-Voltage characteristic has been measured at various fixed temperatures. The Current-Voltage data are fitted into the theory of space charge limited conduction in case of uniform distribution of traps in mobility gap at high electric fields (E ~104 V/cm) of these materials. The density of localized state (g0) are estimated by fitting in theory of space charge limited conduction (SCLC) at the temperature range of (352 - 372 K) in the glassy Se100–xZnx. The density of localized state (0) near the Fermi level are increases with increase of Zn concentration in the (Se100–xZnx) thin films and explain on the basis of increase of the Zn-Se bond.

Local-State Routing in Satellite Constellation Networks from the Perspective of Complex Network

Routing algorithms in satellite constellation networks usually make use of the local state information to adapt to the topology and traffic dynamics,since it’s difficult to obtain the global states in time due to the spatial large-scale feature of constellation networks.Furthermore,they use different range of local states and give these states distinct weights.However,the behind design criterion is ambiguous and often based on experience.This paper discusses the problem from the perspective of complex network.A universal local-state routing model with tunable parameters is presented to generalize the common characteristics of local-state routing algorithms for satellite constellation networks.Based on this,the impacts of localstate routing algorithms on performance and the correlation between routing and traffic dynamics are analyzed in detail.Among them,the tunable parameters,the congestion propagation process,the critical packet sending rate,and the network robustness are discussed respectively.Experimental results show that routing algorithms can achieve a satisfactory performance by maintaining a limited state awareness capability and obtaining the states in a range below the average path length.This provides a valuable design basis for routing algorithms in satellite constellation networks.

Klein Paradox and Disorder-Induced Delocalization of Dirac Quasiparticles in One-Dimensional Systems

Dirac particle penetration is studied theoretically with Dirac equation in one-dimensional systems. We investigate a one-dimensional system with N barriers where both barrier height and well width are constants randomly distributed in certain range. The one-parameter scaling theory for nonrelatiyistic particles is still valid for massive Dirac particles. In the same disorder sample, we find that the localization length of relativistic particles is always larger than that of nonrelativistic particles and the transmission coefficient related to incident particle in both cases fits the form T～ exp（-αL）. More interesting, massless relativistic particles are entirely delocalized no matter how big the energy of incident particles is.

Curved surface effect and emission on silicon nanostructures

The curved surface （CS） effect on nanosilicon plays a main role in the activation for emission and photonic manipulation. The CS effect breaks the symmetrical shape of nanosilicon on which some bonds can produce localized electron states in the band gap. The investigation in calculation and experiment demonstrates that the different curvatures can form the characteristic electron states for some special bonding on the nanosilicon surface, which are related to a series of peaks in photoluminecience （PL）, such as LN, LNO, Lo1, and Lo2 lines in PL spectra due to Si-N, Si-NO, Si=O, and Si-O-Si bonds on curved surface, respectively. Si-Yb bond on curved surface of Si nanostructures can provide the localized states in the band gap deeply and manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as the Lyb line of electroluminescence （EL） emission.

Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser

A new nanolaser concept using silicon quantum dots （QDs） is proposed. The conduction band opened by the quantum confinement effect gives the pumping levels. Localized states in the gap due to some surface bonds on Si QDs can be formed for the activation of emission. An inversion of population can be generated between the localized states and the valence band in a QD fabricated by using a nanosecond pulse laser. Coupling between the active centres formed by localized states and the defect states of the two-dimensional （2D） photonic crystal can be used to select the model in the nanolaser.

Activation of silicon quantum dots for emission

The emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on the surface of silicon quantum dots can break the passivation to form localized electronic states in the band gap to generate active centers where stronger emission occurs. From this point of view, we can build up radiative matter for emission. Emissions of various wavelengths can be obtained by controlling the surface bonds of silicon quantum dots. Our experimental results demonstrate that annealing is important in the treatment of the activation, and stimulated emissions at about 600 and 700 nm take place on active silicon quantum dots.

New Conception of Nano-laser on Silicon Nanostructures

A new conception of nano-laser is proposed in which depending on the size of nano-clusters (silicon quantum dots (QD)), the pumping level of laser can be tuned by the quantum confinement (QC) effect, and the population inversion can be formed between the valence band and the localized states produced from the surface bonds. The nano-laser belongs to the emission of type Ⅱ. The peaks of stimulated emission are observed at 605 nm and 693 nm. Through the micro-cavity of nano-laser, a full width at half maximum of the peak at 693 nm can reach to 0.5 nm. The theoretical model and the experimental results indicate that it is a necessary condition for setting up nano-laser that the smaller size of nano-clusters (d<3 nm) can make the localized states into band gap below the conduction band opened and the states of conduction band become the pumping level of nano-laser. The emission energy of nano-laser will be limited in the range of 1.7～2.3 eV generally due to the position of the localized states in gap, which is good in agreement between the experiments and the theory.

Photophysical Properties of 4t-（p-aminophenyl）-2,2＇：6＇,2″-terpyridine

Spectral and photophysical investigations of 4＇-（p-aminophenyl）-2,2＇：6＇,2″-terpyridine （APT） have been performed in various solvents with different polarity and hydrogen-bonding ability. The emission spectra of APT are found to exhibit dual fluorescence in polar solvents, which attributes to the local excited and intramolecular charge transfer states, respectively. The two-state model is proven out for APT in polar solvent by the time-correlated single photon counting emission decay measurement. Interestingly, the linear relationships of different emission maxima and solvent polarity parameter are found for APT in protic and aprotic solvents, because of the hydrogen bond formation between APT and alcohols at the amino nitrogen N25. Furthermore, the effects of the complexation of the metal ion with tpy group of APT and the hydrogen bond formation between APT with methanol at the terpyridine nitrogen N4-NS-N14 are also presented. The appearance of new long-wave absorption and fluorescence bands indicates that a new ground state of the complexes is formed.

The Structure of Essential Spectra and Discrete Spectrum of Three-Electron Systems in the Impurity Hubbard Model—Quartet State

We consider a three-electron system in the Impurity Hubbard model with a coupling between nearest-neighbors. Our research aim consists of studying the structure of essential spectrum and discrete spectra of the energy operator of three-electron systems in the impurity Hubbard model in the quartet state of the system in a v-dimensional lattice. We have reduced the study of the spectrum of the three-electron quartet state operator in the impurity Hubbard model to the study of the spectrum of a simpler operator. We proved the essential spectra of the three-electron systems in the Impurity Hubbard model in the quartet state is the union of no more than six segments, and the discrete spectrum of the system is consists of no more than four eigenvalues.