In order to eliminate the energy waste caused by the traditional static hardware multithreaded processor used in real-time embedded system working in the low workload situation, the energy efficiency of the hardware m...In order to eliminate the energy waste caused by the traditional static hardware multithreaded processor used in real-time embedded system working in the low workload situation, the energy efficiency of the hardware multithread is discussed and a novel dynamic multithreaded architecture is proposed. The proposed architecture saves the energy wasted by removing idle threads without manipulation on the original architecture, fulfills a seamless switching mechanism which protects active threads and avoids pipeline stall during power mode switching. The report of an implemented dynamic multithreaded processor with 45 nm process from synthesis tool indicates that the area of dynamic multithreaded architecture is only 2.27% higher than the static one in achieving dynamic power dissipation, and consumes 1.3% more power in the same peak performance.展开更多
An extremely low power voltage reference without resistors is presented for power-aware ASICs. In order to reduce the power dissipation, an Oguey current reference source is used to reduce the static current; a cascod...An extremely low power voltage reference without resistors is presented for power-aware ASICs. In order to reduce the power dissipation, an Oguey current reference source is used to reduce the static current; a cascode current mirror is used to increase the power supply rejection ratio （PSRR） and reduce the line sensitivity of the circuit. The voltage reference is fabricated in SMIC 0.18μm CMOS process. The measured results for the voltage reference demonstrate that the temperature coefficient of the voltage is 66 ppm/℃ in a range from 25 to 100 ℃. The line sensitivity is 0.9% in a supply voltage range of 1.8 to 3,3 V, and PSRR is -49 dB at 100 Hz. The power dissipation is 200 nW. The chip area is 0.01 mm2. The circuit can be used as an elementary circuit block for power-aware ASICs.展开更多
A 3.125-Gb/s transimpedance amplifier（TIA） for an optical communication system is realized in 0.35μm CMOS technology.The proposed TIA employs a regulated cascode configuration as the input stage, and adopts DC-canc...A 3.125-Gb/s transimpedance amplifier（TIA） for an optical communication system is realized in 0.35μm CMOS technology.The proposed TIA employs a regulated cascode configuration as the input stage, and adopts DC-cancellation techniques to stabilize the DC operating point.In addition,noise optimization is processed. The on-wafer measurement results show the transimpedance gain of 54.2 dBΩand -3 dB bandwidth of 2.31 GHz.The measured average input referred noise current spectral density is about 18.8 pA/（？）.The measured eye diagram is clear and symmetrical for 2.5-Gb/s and 3.125-Gb/s PRBS.Under a single 3.3-V supply voltage,the TIA consumes only 58.08 mW,including 20 mW from the output buffer.The whole die area is 465×435μm^2.展开更多
基金supported partially by the National High Technical Research and Development Program of China (863 Program) under Grants No. 2011AA040101, No. 2008AA01Z134the National Natural Science Foundation of China under Grants No. 61003251, No. 61172049, No. 61173150+2 种基金the Doctoral Fund of Ministry of Education of China under Grant No. 20100006110015Beijing Municipal Natural Science Foundation under Grant No. Z111100054011078the 2012 Ladder Plan Project of Beijing Key Laboratory of Knowledge Engineering for Materials Science under Grant No. Z121101002812005
文摘In order to eliminate the energy waste caused by the traditional static hardware multithreaded processor used in real-time embedded system working in the low workload situation, the energy efficiency of the hardware multithread is discussed and a novel dynamic multithreaded architecture is proposed. The proposed architecture saves the energy wasted by removing idle threads without manipulation on the original architecture, fulfills a seamless switching mechanism which protects active threads and avoids pipeline stall during power mode switching. The report of an implemented dynamic multithreaded processor with 45 nm process from synthesis tool indicates that the area of dynamic multithreaded architecture is only 2.27% higher than the static one in achieving dynamic power dissipation, and consumes 1.3% more power in the same peak performance.
基金Project supported by the National Natural Science Foundation of China(Nos.61161003,61264001,61166004)the Guangxi Natural Science Foundation(No.2013GXNSFAA019333)
文摘An extremely low power voltage reference without resistors is presented for power-aware ASICs. In order to reduce the power dissipation, an Oguey current reference source is used to reduce the static current; a cascode current mirror is used to increase the power supply rejection ratio （PSRR） and reduce the line sensitivity of the circuit. The voltage reference is fabricated in SMIC 0.18μm CMOS process. The measured results for the voltage reference demonstrate that the temperature coefficient of the voltage is 66 ppm/℃ in a range from 25 to 100 ℃. The line sensitivity is 0.9% in a supply voltage range of 1.8 to 3,3 V, and PSRR is -49 dB at 100 Hz. The power dissipation is 200 nW. The chip area is 0.01 mm2. The circuit can be used as an elementary circuit block for power-aware ASICs.
基金Project supported by the National High Technology Research and Development Program of China(No.2006AA012284)
文摘A 3.125-Gb/s transimpedance amplifier（TIA） for an optical communication system is realized in 0.35μm CMOS technology.The proposed TIA employs a regulated cascode configuration as the input stage, and adopts DC-cancellation techniques to stabilize the DC operating point.In addition,noise optimization is processed. The on-wafer measurement results show the transimpedance gain of 54.2 dBΩand -3 dB bandwidth of 2.31 GHz.The measured average input referred noise current spectral density is about 18.8 pA/（？）.The measured eye diagram is clear and symmetrical for 2.5-Gb/s and 3.125-Gb/s PRBS.Under a single 3.3-V supply voltage,the TIA consumes only 58.08 mW,including 20 mW from the output buffer.The whole die area is 465×435μm^2.
